Vishay Siliconix Products

SUP25P10-138-GE3

Vishay Siliconix

MOSFET P-CH 100V 16.3A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 73.5W (Tc)
• Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Package: TO-220-3

SUD50P10-43-E3

Vishay Siliconix

MOSFET P-CH 100V 38A TO252

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
• Rds On (Max) @ Id, Vgs: 43 mOhm @ 9.4A, 10V
• Operating Temperature: -50°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF720STRL

Vishay Siliconix

MOSFET N-CH 400V 3.3A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFPS37N50A

Vishay Siliconix

MOSFET N-CH 500V 36A SUPER247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5579pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 446W (Tc)
• Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: SUPER-247 (TO-274AA)
• Package / Case: TO-274AA

Package: TO-274AA

IRF740

Vishay Siliconix

MOSFET N-CH 400V 10A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Package: TO-220-3

SIE818DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 75V 60A POLARPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 38V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 10-PolarPAK? (L)
• Package / Case: 10-PolarPAK? (L)

Package: 10-PolarPAK? (L)

IRLU014

Vishay Siliconix

MOSFET N-CH 60V 7.7A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251AA
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Package: TO-251-3 Short Leads, IPak, TO-251AA

IRF820STRRPBF

Vishay Siliconix

MOSFET N-CH 500V 2.5A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF630STRRPBF

Vishay Siliconix

MOSFET N-CH 200V 9A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 74W (Tc)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFP22N50APBF

Vishay Siliconix

MOSFET N-CH 500V 22A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 277W (Tc)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Package: TO-247-3

IRFD014PBF

Vishay Siliconix

MOSFET N-CH 60V 1.7A 4-DIP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: 4-DIP, Hexdip, HVMDIP
• Package / Case: 4-DIP (0.300", 7.62mm)

Package: 4-DIP (0.300", 7.62mm)

SQ4940AEY-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 8A
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.3A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
• Power - Max: 4W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

SIC531ACD-T1-GE3

Vishay Siliconix

IC CTLR STAGE 30A 3.3V PWM PPAK

• Output Configuration: Half Bridge
• Applications: Synchronous Buck Converters
• Interface: PWM
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): -
• Current - Output / Channel: 30A
• Current - Peak Output: 35A
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 4.5 V ~ 24 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit, Diode Emulation
• Fault Protection: UVLO
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? MLP4535-22L
• Supplier Device Package: POWERPAK? MLP4535-22L

Package: PowerPAK? MLP4535-22L

DG308BDQ

Vishay Siliconix

IC SWITCH QUAD SPST 16TSSOP

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 85 Ohm
• Channel-to-Channel Matching (ΔRon): 1.7 Ohm
• Voltage - Supply, Single (V+): 4 V ~ 44 V
• Voltage - Supply, Dual (V±): ±4 V ~ 22 V
• Switch Time (Ton, Toff) (Max): 200ns, 150ns
• -3db Bandwidth: -
• Charge Injection: 1pC
• Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -95dB @ 100kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

Package: 16-TSSOP (0.173", 4.40mm Width)

DG409LDY-T1-E3

Vishay Siliconix

IC MUX CMOS ANG DUAL 8CH 16SOIC

• Switch Circuit: SP4T
• Multiplexer/Demultiplexer Circuit: 4:1
• Number of Circuits: 2
• On-State Resistance (Max): 29 Ohm
• Channel-to-Channel Matching (ΔRon): 1 Ohm
• Voltage - Supply, Single (V+): 2 V ~ 12 V
• Voltage - Supply, Dual (V±): ±3 V ~ 6 V
• Switch Time (Ton, Toff) (Max): 55ns, 25ns
• -3db Bandwidth: -
• Charge Injection: 1pC
• Channel Capacitance (CS(off), CD(off)): 7pF, 20pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -82dB @ 100kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Package: 16-SOIC (0.154", 3.90mm Width)

DG2513DN-T1-E4

Vishay Siliconix

IC SWITCH DUAL LV 6MINIQFN

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 1
• On-State Resistance (Max): 1.3 Ohm
• Channel-to-Channel Matching (ΔRon): 150 mOhm (Max)
• Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 35ns, 31ns
• -3db Bandwidth: -
• Charge Injection: 14pC
• Channel Capacitance (CS(off), CD(off)): 19pF
• Current - Leakage (IS(off)) (Max): 2nA
• Crosstalk: -64dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-UFDFN
• Supplier Device Package: 6-miniQFN

Package: 6-UFDFN

DG429DW-E3

Vishay Siliconix

IC MUX ANLG 8CH W/LATCH 18SOIC

• Switch Circuit: SP4T
• Multiplexer/Demultiplexer Circuit: 4:1
• Number of Circuits: 2
• On-State Resistance (Max): 100 Ohm
• Channel-to-Channel Matching (ΔRon): 5 Ohm
• Voltage - Supply, Single (V+): 12V
• Voltage - Supply, Dual (V±): ±15V
• Switch Time (Ton, Toff) (Max): 150ns, 150ns
• -3db Bandwidth: -
• Charge Injection: 1pC
• Channel Capacitance (CS(off), CD(off)): 11pF, 20pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 18-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 18-SOIC W

Package: 18-SOIC (0.295", 7.50mm Width)

DG333ALDJ-E3

Vishay Siliconix

IC SWITCH QUAD SPDT 20DIP

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 1
• On-State Resistance (Max): 45 Ohm
• Channel-to-Channel Matching (ΔRon): 2 Ohm (Max)
• Voltage - Supply, Single (V+): 5 V ~ 40 V
• Voltage - Supply, Dual (V±): ±4 V ~ 22 V
• Switch Time (Ton, Toff) (Max): 175ns, 145ns
• -3db Bandwidth: -
• Charge Injection: 10pC
• Channel Capacitance (CS(off), CD(off)): 8pF
• Current - Leakage (IS(off)) (Max): 250pA
• Crosstalk: -80dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 20-DIP (0.300", 7.62mm)
• Supplier Device Package: 20-PDIP

Package: 20-DIP (0.300", 7.62mm)

DG303BDY-T1-E3

Vishay Siliconix

IC SWITCH CMOS 14SOIC

• Switch Circuit: DPST - NO/NC
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 2
• On-State Resistance (Max): 50 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): -
• Voltage - Supply, Dual (V±): ±15V
• Switch Time (Ton, Toff) (Max): 300ns, 250ns
• -3db Bandwidth: -
• Charge Injection: 8pC
• Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -74dB @ 500kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

Package: 14-SOIC (0.154", 3.90mm Width)

DG442DY-T1-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 85 Ohm
• Channel-to-Channel Matching (ΔRon): 4 Ohm (Max)
• Voltage - Supply, Single (V+): 12V
• Voltage - Supply, Dual (V±): ±15V
• Switch Time (Ton, Toff) (Max): 250ns, 210ns
• -3db Bandwidth: -
• Charge Injection: -1pC
• Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -100dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Package: 16-SOIC (0.154", 3.90mm Width)

DG412DQ-T1-E3

Vishay Siliconix

IC SWITCH QUAD SPST TSSOP16

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 35 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): -
• Voltage - Supply, Dual (V±): ±15V
• Switch Time (Ton, Toff) (Max): 175ns, 145ns
• -3db Bandwidth: -
• Charge Injection: 5pC
• Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
• Current - Leakage (IS(off)) (Max): 250pA
• Crosstalk: -85dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: -
• Supplier Device Package: 16-TSSOP

Package: -

SIC474ED-T1-GE3

Vishay Siliconix

MICROBUCK 3A 4.5-55V INPUT

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 55V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 50.6V
• Current - Output: 3A
• Frequency - Switching: 20kHz ~ 2MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® MLP55-27
• Supplier Device Package: PowerPAK® MLP55-27

Package: PowerPAK® MLP55-27

SIHB30N60AEL-GE3

Vishay Siliconix

MOSFET N-CH 600V 28A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Package: -

SI6423DQ-T1-BE3

Vishay Siliconix

P-CHANNEL 12-V (D-S) MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12 V
• Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 800mV @ 400µA
• Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.05W (Ta)
• Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

Package: -

SQS180ENW-T1_GE3

Vishay Siliconix

AUTOMOTIVE N-CHANNEL 80 V (D-S)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3092 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 119W (Tc)
• Rds On (Max) @ Id, Vgs: 8.67mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerPAK® 1212-8SLW
• Package / Case: PowerPAK® 1212-8SLW

Package: -

SQ3426EEV-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 7A 6TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

Package: -

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SIHA186N60EF-GE3

Vishay Siliconix

MOSFET N-CH 600V 8.4A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 156W (Tc)
• Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Full Pack
• Package / Case: TO-220-3 Full Pack

Package: -

SIZF5302DT-T1-RE3

Vishay Siliconix

MOSFET 2N-CH 30V 28.1A PWRPAIR

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
• Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
• Power - Max: 3.8W (Ta), 48.1W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 12-PowerPair™
• Supplier Device Package: PowerPAIR® 3x3FS

Package: -

SIHA180N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 19A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 33W (Tc)
• Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Full Pack
• Package / Case: TO-220-3 Full Pack

Package: -

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SQJ461EP-T2_GE3

Vishay Siliconix

P-CHANNEL 60-V (D-S) 175C MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4710 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 16mOhm @ 14.4A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

Package: -