Innoscience Technology, which has launched its international operations in the US and Europe, is the largest IDM company solely focused on GaN Technology. The company has a comprehensive portfolio of devices from 30V to 650V, with more than 35 million application components, including USB PD chargers/adapters, data centers, mobile phones and LED drives. The company manufactures high-performance, normally off GaN FETs in electronic mode
Isabellenhutte has created a powerful low-ohmic buffering shunt, THE SMT-V, with extremely high pulse power ratings. The design and materials of the new SMT-V are better able to withstand pulsed loads. High pulse power ratings can be achieved by using NOVENTIN, an internal resistance material. The device can absorb 2.5J pulse energy with a pulse duration of 0.1 s and a terminal temperature of 120℃. Several 50 pulses can be absorbed with corresponding gap time during its life cycle
