Alliance Memory has expanded its high-speed CMOS mobile low-power SDRAM with a new LPDDR4X device with on-chip ECC. As an extension of the company's fourth-generation LPDDR4 SDRAM, 8Gb AS4C256M32MD4V-062BAN provides a low rated power of -50% in a 200-ball FBGA package to achieve higher power efficiency.
Compared with the 1.1V of LPDDR4 SDRAM, this device has a low voltage operation of 0.6V, extending the battery life of portable electronic products in the commercial, consumer and industrial markets, including smartphones, smart speakers and other IoT using AI and 5G Equipment technology.
SDRAM provides higher efficiency for advanced audio and ultra-high resolution video in embedded applications, provides a fast clock speed of 1.6GHz, and achieves an extremely high transmission rate of 3.2Gbps. For automotive applications including ADAS systems, AEC-Q100-compliant devices can operate in a temperature range of -40C to +105C.
The solution is organized as two channels per device, and a single channel contains 8 16-bit groups. The component provides fully synchronized operation; programmable read and write burst lengths of 16, 32 and dynamic; and selectable output drive strength. The on-chip temperature sensor controls the self-refresh rate.
This SDRAM provides a reliable plug-in, pin-compatible alternative to many similar solutions in high-bandwidth, high-performance memory system applications, eliminating the need for expensive redesigns and component recertification.