Apex Microtechnology's SA110 high-current, high-voltage half h-bridge switch module uses silicon carbide (SiC) mosfet integrated gate drives. The SA110 integrates gate drive control, a very high 400 kHz maximum switching frequency, and 28 A continuous output current in the Class A variant. The advent of high-performance, reliable wide-bandgap (WBG) power devices based on SiC processes has redefined the world's high-power amplifier design possibilities and products.
SiC MOSFETs offer lower on-resistance at temperature and current levels, better current-to-voltage performance, and lower switching losses. This hybrid is provided in a 12-pin PSIP package providing a compact footprint and protection features. Due to the integrated gate drive, switching speed is greatly increased, parasitic effects are reduced, and control is easier. The SA110 is ideal for applications focused on over-temperature performance, high efficiency and compact design.
