Toshiba Electronics Europe GmbH has added four N-channel superjunction 650V power MOSFET devices to expand its DTMOSVI range. The new equipment builds on the success of current equipment and is intended for industrial and lighting power applications, as well as other applications requiring maximum efficiency at a small size.
Compare FoM to the previous DTMOS generation. The new TK090E65Z, TK110E65Z, TK155E65Z and TK190E65Z MOSFET achieve 40% RDSON X gate leakage charge (Qgd). The design, including new equipment, will improve efficiency. The performance improvements will apply to new designs and upgrades to existing designs. Thus, this translates into a significant reduction in switching losses on older equipment.
All units are offered in industry-standard TO-220 through-hole packages. All four new devices provide 650V drain-source voltage (VDSS) and up to 30A drain-source current (ID) capabilities. RDSON as low as 0.09 ohm, Qgd as low as 7.1nC, achieving high speed and low loss operation.