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2N7002T-7-F

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2N7002T-7-F

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Part Number 2N7002T-7-F
Manufacturer Diodes Incorporated
Description MOSFET N-CH 60V 115MA SOT-523
Datasheet 2N7002T-7-F Datasheet
Package SOT-523
In Stock 299,952 piece(s)
Unit Price $ 0.0758 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 30 - Feb 4 (Choose Expedited Shipping)
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Part Number # 2N7002T-7-F (Transistors - FETs, MOSFETs - Single) is manufactured by Diodes Incorporated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For 2N7002T-7-F specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add 2N7002T-7-F with quantity into BOM. Heisener.com does NOT require any registration to request a quote of 2N7002T-7-F.

2N7002T-7-F Specifications

ManufacturerDiodes Incorporated
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet 2N7002T-7-FDatasheet
PackageSOT-523
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Rds On (Max) @ Id, Vgs7.5 Ohm @ 50mA, 5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-523
Package / CaseSOT-523

2N7002T-7-F Datasheet

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2N7002T Document number: DS30301 Rev. 15 - 2 1 of 5 www.diodes.com August 2018 © Diodes Incorporated 2N7002T N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) ID TA = +25°C 60V 7.5Ω @ VGS = 5V 115mA Description and Applications This new generation MOSFET has been designed to minimize the on- state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  DC-DC Converters  Power Management Functions  Battery Operated Systems and Solid-State Relays  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: SOT523  Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208  Terminal Connections: See Diagram  Weight: 0.002 grams (Approximate) Ordering Information (Notes 5 and 6) Part Number Qualification Case Packaging 2N7002T-7-F Commercial SOT523 3,000/Tape & Reel 2N7002T-13-F Commercial SOT523 10,000/Tape & Reel 2N7002TQ-7-F Automotive SOT523 3,000/Tape & Reel 2N7002TQ-13-F Automotive SOT523 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 6. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information Date Code Key Year 2005 ~ 2018 2019 2020 2021 2022 2023 Code S ~ F G H I J K Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT523 Top View Equivalent Circuit Top View S o urce G ate D ra in D G S 72 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: F = 2018) M = Month (ex: 9 = September) 72 YM e3

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2N7002T Document number: DS30301 Rev. 15 - 2 2 of 5 www.diodes.com August 2018 © Diodes Incorporated 2N7002T Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS  1.0M VDGR 60 V Gate-Source Voltage Continuous Pulsed VGSS ±20 ±40 V Drain Current (Note 7) Continuous Continuous @ +100°C Pulsed ID 115 73 800 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 7) PD 150 mW Thermal Resistance, Junction to Ambient RJA 833 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 60   V VGS = 0V, ID = 10A Zero Gate Voltage Drain Current @ TC = +25°C @ TC = +125°C IDSS   1.0 500 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS   ±10 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 1.0  2.0 V VDS = VGS, ID = 250A Static Drain-Source On-Resistance @ TJ = +25°C @ TJ = +125°C RDS(ON)  2.0 4.4 7.5 13.5  VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A On-State Drain Current ID(ON) 0.5 1.0  A VGS = 10V, VDS = 7.5V Forward Transconductance gFS 80   mS VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss  22 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss  11 25 pF Reverse Transfer Capacitance Crss  2.0 5.0 pF SWITCHING CHARACTERISTICS (Note 9) Turn-On Delay Time tD(ON)  7.0 20 ns VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 Turn-Off Delay Time tD(OFF)  11 20 ns Notes: 7. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing.

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2N7002T Document number: DS30301 Rev. 15 - 2 3 of 5 www.diodes.com August 2018 © Diodes Incorporated 2N7002T 0 1 2 3 4 5 V , DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics DS 0.2 0.1 0.4 0.3 0.5 0.6 0.7 0.8 0.9 I , D R A IN -S O U R C E C U R R E N T ( A ) D 1.0 0 V = 2.5VGS V = 3.0VGS V = 4.0VGS V = 5.0VGS V = 6.0VGS V = 7.0VGS V = 10VGS 1 2 3 4 5 0 0.2 I , DRAIN-SOURCE CURRENT (A) Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current D 0.4 0.6 0.8 1.0 R , D R A IN -S O U R C E O N -R E S IS T A N C E D S (O N ) ( )  V = 3.0VGS V = 4.0VGS V = .0VGS 6 V = .0VGS 7 V = VGS 10 V = 5.0VGS 0.5 1.5 2.5 R D R A IN -S O U R C E O N -R E S IS T A N C E ( N O R M A L IZ E D ) D S (O N ), 0 1.0 2.0 3.0 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Fig. 4 On-Resistance Variation with Temperature J ° V = 10V I = 500mA GS D 0 5 10 15 20 25 30 V , DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance DS 0 10 20 30 50 40 60 C , C A P A C IT A N C E ( p F ) Ciss Coss Crss f = 1MHz 0 2 4 6 8 10 V , GATE-SOURCE VOLTAGE (V) Fig. 6 On-Resistance vs. Gate-Source Voltage GS 0 0.5 2.0 3.0 2.5 4.5 4.0 3.5 5.0 R D R A IN -S O U R C E O N -R E S IS T A N C E D S (O N ), ( )  1.5 1.0 I = 50mAD 0.5 1.5 2.5 0 1.0 2.0 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (C) Fig. 3 Gate Threshold Variation with Temperature J ° V , G A T E T H R E S H O L D V O L T A G E ( V ) G S ( t h ) I = 250µA D V G S (T H ), G A T E T H R E S H O L D V O L T A G E ( V )

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2N7002T Document number: DS30301 Rev. 15 - 2 4 of 5 www.diodes.com August 2018 © Diodes Incorporated 2N7002T Package Outline Dimensions     Please see http://www.diodes.com/package-outlines.html for the latest version. SOT523 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT523 SOT523 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.60 0.80 0.75 A3 0.45 0.65 0.50 b 0.15 0.30 0.22 c 0.10 0.20 0.12 D 1.50 1.70 1.60 E 1.45 1.75 1.60 E1 0.75 0.85 0.80 e 0.50 BSC e1 0.90 1.10 1.00 L 0.20 0.40 0.33 a 0° -- 8° All Dimensions in mm Dimensions Value (in mm) C 1.29 X 0.40 X1 0.70 Y 0.51 Y1 1.80 E1E b e1 D A3 e A2 A1 L c a Y1 X Y X1 C

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December 17, 2020

Excellent service over extended period of time. Incredibly fast shipping, never any errors. Couldn't be more pleased.

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December 16, 2020

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December 12, 2020

What I like was it was shipped fast and no damage.

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December 11, 2020

It gives you a good quality product, with a great variety.. I will for sure order this set again when i start to run low.

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November 22, 2020

High level customer service, and quick response.

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