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Transistors - FETs, MOSFETs - Single

Records 26,499
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Part Number
Manufacturer
Description
Package
In Stock
Quantity
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF3805L-7PPBF
Infineon Technologies

MOSFET N-CH 55V 160A TO-263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 140A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
In Stock176
MOSFET (Metal Oxide)
55V
160A (Tc)
10V
4V @ 250µA
200nC @ 10V
7820pF @ 25V
��20V
-
300W (Tc)
2.6 mOhm @ 140A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
hotBUZ31 E3045A
Infineon Technologies

MOSFET N-CH 200V 14.5A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 95W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
In Stock38,000
MOSFET (Metal Oxide)
200V
14.5A (Tc)
10V
4V @ 1mA
-
1120pF @ 25V
��20V
-
95W (Tc)
200 mOhm @ 9A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hotIRLR7807ZTR
Infineon Technologies

MOSFET N-CH 30V 43A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock5,820
MOSFET (Metal Oxide)
30V
43A (Tc)
4.5V, 10V
2.25V @ 250µA
11nC @ 4.5V
780pF @ 15V
��20V
-
40W (Tc)
13.8 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hotIRL1104S
Infineon Technologies

MOSFET N-CH 40V 104A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V
  • Vgs (Max): ��16V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
In Stock2,956
MOSFET (Metal Oxide)
40V
104A (Tc)
4.5V, 10V
1V @ 250µA
68nC @ 4.5V
3445pF @ 25V
��16V
-
2.4W (Ta), 167W (Tc)
8 mOhm @ 62A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF6215STRR
Infineon Technologies

MOSFET P-CH 150V 13A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
In Stock111
MOSFET (Metal Oxide)
150V
13A (Tc)
10V
4V @ 250µA
66nC @ 10V
860pF @ 25V
��20V
-
3.8W (Ta), 110W (Tc)
290 mOhm @ 6.6A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hotAOD210
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 70A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock59,010
MOSFET (Metal Oxide)
30V
23A (Ta), 70A (Tc)
4.5V, 10V
2.2V @ 250µA
58nC @ 10V
4300pF @ 15V
��20V
-
2.7W (Ta), 150W (Tc)
3 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
EMH1405-TL-H
ON Semiconductor

MOSFET N-CH 30V 8.5A EMH8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-EMH
  • Package / Case: 8-SMD, Flat Lead
Package: 8-SMD, Flat Lead
In Stock496
MOSFET (Metal Oxide)
30V
8.5A (Ta)
4V, 10V
-
15nC @ 10V
820pF @ 10V
��20V
-
1.5W (Ta)
19 mOhm @ 4A, 10V
150°C (TJ)
Surface Mount
8-EMH
8-SMD, Flat Lead
hotSUP85N02-03-E3
Vishay Siliconix

MOSFET N-CH 20V 85A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 2mA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21250pF @ 20V
  • Vgs (Max): ��8V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Package: TO-220-3
In Stock369
MOSFET (Metal Oxide)
20V
85A (Tc)
2.5V, 4.5V
450mV @ 2mA (Min)
200nC @ 4.5V
21250pF @ 20V
��8V
-
250W (Tc)
3 mOhm @ 30A, 4.5V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hotSUD45P03-15-E3
Vishay Siliconix

MOSFET P-CH 30V TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock45,286
MOSFET (Metal Oxide)
30V
-
4.5V, 10V
1V @ 250µA (Min)
125nC @ 10V
3200pF @ 25V
��20V
-
4W (Ta), 70W (Tc)
15 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hotSI7356ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6215pF @ 15V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
In Stock12,000
MOSFET (Metal Oxide)
30V
40A (Tc)
4.5V, 10V
3V @ 250µA
145nC @ 10V
6215pF @ 15V
��20V
-
5.4W (Ta), 83W (Tc)
3 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
FQAF12P20
Fairchild/ON Semiconductor

MOSFET P-CH 200V 8.6A TO-3PF

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 470 mOhm @ 4.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: SC-94
Package: SC-94
In Stock357
MOSFET (Metal Oxide)
200V
8.6A (Tc)
10V
5V @ 250µA
40nC @ 10V
1200pF @ 25V
��30V
-
70W (Tc)
470 mOhm @ 4.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PF
SC-94
FQI5P10TU
Fairchild/ON Semiconductor

MOSFET P-CH 100V 4.5A I2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 2.25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
In Stock281
MOSFET (Metal Oxide)
100V
4.5A (Tc)
10V
4V @ 250µA
8.2nC @ 10V
250pF @ 25V
��30V
-
3.75W (Ta), 40W (Tc)
1.05 Ohm @ 2.25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
hotZXMN3A01FTC
Diodes Incorporated

MOSFET N-CH 30V 1.8A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 625mW (Ta)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: TO-236-3, SC-59, SOT-23-3
In Stock32,126
MOSFET (Metal Oxide)
30V
1.8A (Ta)
4.5V, 10V
1V @ 250µA
3.9nC @ 10V
190pF @ 25V
��20V
-
625mW (Ta)
120 mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
hotIRFIBF30G
Vishay Siliconix

MOSFET N-CH 900V 1.9A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 1.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
Package: TO-220-3 Full Pack, Isolated Tab
In Stock6,616
MOSFET (Metal Oxide)
900V
1.9A (Tc)
10V
4V @ 250µA
78nC @ 10V
1200pF @ 25V
��20V
-
35W (Tc)
3.7 Ohm @ 1.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
hotSTP20NM50FP
STMicroelectronics

MOSFET N-CH 550V 20A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Package: TO-220-3 Full Pack
In Stock15,460
MOSFET (Metal Oxide)
550V
20A (Tc)
10V
5V @ 250µA
56nC @ 10V
1480pF @ 25V
��30V
-
45W (Tc)
250 mOhm @ 10A, 10V
-65°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hotSTF8NK85Z
STMicroelectronics

MOSFET N-CH 850V 6.7A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 25V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3.35A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Package: TO-220-3 Full Pack
In Stock14,120
MOSFET (Metal Oxide)
850V
6.7A (Tc)
10V
4.5V @ 100µA
60nC @ 10V
1870pF @ 25V
��30V
-
35W (Tc)
1.4 Ohm @ 3.35A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
IPI60R199CPXKSA1
Infineon Technologies

MOSFET N-CH 600V 16A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 660µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
In Stock196
MOSFET (Metal Oxide)
600V
16A (Tc)
10V
3.5V @ 660µA
43nC @ 10V
1520pF @ 100V
��20V
-
139W (Tc)
199 mOhm @ 9.9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
IPD50R950CEAUMA1
Infineon Technologies

CONSUMER

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Package: -
In Stock117
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPC022N03L3X1SA1
Infineon Technologies

MOSFET N-CH 30V SAWN BARE DIE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Sawn on foil
  • Package / Case: Die
Package: Die
In Stock340
MOSFET (Metal Oxide)
30V
1A (Tj)
10V
2.2V @ 250µA
-
-
-
-
-
50 mOhm @ 2A, 10V
-
Surface Mount
Sawn on foil
Die
IXFR24N100Q3
IXYS

MOSFET N-CH 1000V 18A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 490 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: TO-247-3
Package: TO-247-3
In Stock228
MOSFET (Metal Oxide)
1000V
18A (Tc)
10V
6.5V @ 4mA
140nC @ 10V
7200pF @ 25V
��30V
-
500W (Tc)
490 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
TO-247-3
hotIXFH66N20Q
IXYS

MOSFET N-CH 200V 66A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 33A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
Package: TO-247-3
In Stock65,000
MOSFET (Metal Oxide)
200V
66A (Tc)
10V
4V @ 4mA
105nC @ 10V
3700pF @ 25V
��30V
-
400W (Tc)
40 mOhm @ 33A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
IXTP2N100
IXYS

MOSFET N-CH 1000V 2A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 25V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Package: TO-220-3
In Stock319
MOSFET (Metal Oxide)
1000V
2A (Tc)
10V
4.5V @ 250µA
40nC @ 10V
825pF @ 25V
��20V
-
100W (Tc)
7 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
NVMFS6B05NWFT3G
ON Semiconductor

MOSFET N-CH 100V 104A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
  • Vgs (Max): ��16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
Package: 8-PowerTDFN
In Stock107
MOSFET (Metal Oxide)
100V
-
10V
4V @ 250µA
44nC @ 10V
3100pF @ 25V
��16V
-
3.8W (Ta), 165W (Tc)
8 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
hotSI7342DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 9A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
  • Vgs (Max): ��12V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.25 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Package: PowerPAK? SO-8
In Stock799
MOSFET (Metal Oxide)
30V
9A (Ta)
4.5V, 10V
1.8V @ 250µA
19nC @ 4.5V
1900pF @ 15V
��12V
-
1.8W (Ta)
8.25 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
AO4453
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 12V 9A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 6V
  • Vgs (Max): ��8V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Package: 8-SOIC (0.154", 3.90mm Width)
In Stock433
MOSFET (Metal Oxide)
12V
9A (Ta)
1.5V, 4.5V
900mV @ 250µA
18nC @ 4.5V
1370pF @ 6V
��8V
-
2.5W (Ta)
19 mOhm @ 9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
STH80N10F7-2
STMicroelectronics

MOSFET N-CH 100V 80A H2PAK-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Package: TO-263-3, D2Pak (2 Leads + Tab) Variant
In Stock125
MOSFET (Metal Oxide)
100V
80A (Tc)
10V
4.5V @ 250µA
45nC @ 10V
3100pF @ 50V
��20V
-
110W (Tc)
9.5 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
H2PAK
TO-263-3, D2Pak (2 Leads + Tab) Variant
2SJ652-1E
ON Semiconductor

MOSFET P-CH 60V 28A TO-220FP-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V
  • Vgs (Max): ��20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3SG
  • Package / Case: TO-220-3 Full Pack
Package: TO-220-3 Full Pack
In Stock1,011
MOSFET (Metal Oxide)
60V
28A (Ta)
4V, 10V
-
80nC @ 10V
4360pF @ 20V
��20V
-
2W (Ta), 30W (Tc)
38 mOhm @ 14A, 10V
150°C (TJ)
Through Hole
TO-220F-3SG
TO-220-3 Full Pack
hotFDG313N
Fairchild/ON Semiconductor

MOSFET N-CH 25V 0.95A SC70-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Vgs (Max): ��8V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6
  • Package / Case: 6-TSSOP, SC-88, SOT-363
Package: 6-TSSOP, SC-88, SOT-363
In Stock241,604
MOSFET (Metal Oxide)
25V
950mA (Ta)
2.7V, 4.5V
1.5V @ 250µA
2.3nC @ 4.5V
50pF @ 10V
��8V
-
750mW (Ta)
450 mOhm @ 500mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
STL9P2UH7
STMicroelectronics

MOSFET P-CH 20V 9A POWERFLAT

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 16V
  • Vgs (Max): ��8V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 4.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (3.3x3.3)
  • Package / Case: 8-PowerVDFN
Package: 8-PowerVDFN
In Stock4,465
MOSFET (Metal Oxide)
20V
9A (Tc)
1.5V, 4.5V
1V @ 250µA
22nC @ 4.5V
2390pF @ 16V
��8V
-
2.9W (Tc)
22.5 mOhm @ 4.5A, 4.5V
150°C (TJ)
Surface Mount
PowerFlat? (3.3x3.3)
8-PowerVDFN
hotFQP3N60C
Fairchild/ON Semiconductor

MOSFET N-CH 600V 3A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 25V
  • Vgs (Max): ��30V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Package: TO-220-3
In Stock27,336
MOSFET (Metal Oxide)
600V
3A (Tc)
10V
4V @ 250µA
14nC @ 10V
565pF @ 25V
��30V
-
75W (Tc)
3.4 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3