Page 893 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPI16N50C3HKSA1
Infineon Technologies

MOSFET N-CH 560V 16A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,736
IRL3103D1S
Infineon Technologies

MOSFET N-CH 30V 64A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock319,800
SUD25N04-25-E3
Vishay Siliconix

MOSFET N-CH 40V 25A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,920
SI1054X-T1-E3
Vishay Siliconix

MOSFET N-CH 12V 1.32A SC89-6

Package: SOT-563, SOT-666

Stock4,368
NTD4959N-35G
ON Semiconductor

MOSFET N-CH 30V 9A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock7,808
NDP7061
Fairchild/ON Semiconductor

MOSFET N-CH 60V 64A TO-220

Package: TO-220-3

Stock8,688
FQA19N20L
Fairchild/ON Semiconductor

MOSFET N-CH 200V 25A TO-3P

Package: TO-3P-3, SC-65-3

Stock7,024
FQA33N10L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 36A TO-3P

Package: TO-3P-3, SC-65-3

Stock105,600
HUFA76419P3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 29A TO-220AB

Package: TO-220-3

Stock2,128
FQI11P06TU
Fairchild/ON Semiconductor

MOSFET P-CH 60V 11.4A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,000
IRF734PBF
Vishay Siliconix

MOSFET N-CH 450V 4.9A TO-220AB

Package: TO-220-3

Stock21,900
BSC0502NSIATMA1
Infineon Technologies

MOSFET N-CH 30V 26A TDSON-8

Package: 8-PowerTDFN

Stock6,784
IXTH72N20T
IXYS

MOSFET N-CH 200V 72A TO-247

Package: TO-247-3

Stock4,448
SIHF23N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 23A TO-220

Package: TO-220-3 Full Pack

Stock7,312
AOTF22N50
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 22A TO220F

Package: TO-220-3 Full Pack

Stock3,696
STL75NH3LL
STMicroelectronics

MOSFET N-CH 30V 20A POWERFLAT6X5

Package: 8-PowerVDFN

Stock7,600
SI4686DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 18.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,203,804
PSMN017-80BS,118
Nexperia USA Inc.

MOSFET N-CH 80V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,776
BUK9Y58-75B,115
Nexperia USA Inc.

MOSFET N-CH 75V 20.73A LFPAK

Package: SC-100, SOT-669

Stock6,448
STD70N6F3
STMicroelectronics

MOSFET N-CH 60V 70A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,012

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPI16N50C3HKSA1	Infineon Technologies	MOSFET N-CH 560V 16A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,736	MOSFET (Metal Oxide)	560V	16A (Tc)	10V	3.9V @ 675µA	66nC @ 10V	1600pF @ 25V	±20V	-	160W (Tc)	280 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IRL3103D1S	Infineon Technologies	MOSFET N-CH 30V 64A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock319,800	MOSFET (Metal Oxide)	30V	64A (Tc)	4.5V, 10V	1V @ 250µA	43nC @ 4.5V	1900pF @ 25V	±16V	-	3.1W (Ta), 89W (Tc)	14 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUD25N04-25-E3	Vishay Siliconix	MOSFET N-CH 40V 25A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,920	MOSFET (Metal Oxide)	40V	25A (Tc)	4.5V, 10V	3V @ 250µA	20nC @ 10V	510pF @ 25V	±20V	-	3W (Ta), 33W (Tc)	25 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SI1054X-T1-E3	Vishay Siliconix	MOSFET N-CH 12V 1.32A SC89-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.57nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 236mW (Ta) Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.32A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock4,368	MOSFET (Metal Oxide)	12V	-	1.8V, 4.5V	1V @ 250µA	8.57nC @ 5V	480pF @ 6V	±8V	-	236mW (Ta)	95 mOhm @ 1.32A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-6	SOT-563, SOT-666
NTD4959N-35G	ON Semiconductor	MOSFET N-CH 30V 9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock7,808	MOSFET (Metal Oxide)	30V	9A (Ta), 58A (Tc)	4.5V, 11.5V	2.5V @ 250µA	25nC @ 11.5V	1456pF @ 12V	±20V	-	1.3W (Ta), 52W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NDP7061	Fairchild/ON Semiconductor	MOSFET N-CH 60V 64A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 35A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock8,688	MOSFET (Metal Oxide)	60V	64A (Tc)	10V	4V @ 250µA	100nC @ 10V	1930pF @ 25V	±20V	-	130W (Tc)	16 mOhm @ 35A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
FQA19N20L	Fairchild/ON Semiconductor	MOSFET N-CH 200V 25A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,024	MOSFET (Metal Oxide)	200V	25A (Tc)	5V, 10V	2V @ 250µA	35nC @ 5V	2200pF @ 25V	±20V	-	190W (Tc)	140 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FQA33N10L	Fairchild/ON Semiconductor	MOSFET N-CH 100V 36A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 163W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock105,600	MOSFET (Metal Oxide)	100V	36A (Tc)	5V, 10V	2V @ 250µA	40nC @ 5V	1630pF @ 25V	±20V	-	163W (Tc)	52 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
HUFA76419P3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 29A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,128	MOSFET (Metal Oxide)	60V	29A (Tc)	4.5V, 10V	3V @ 250µA	28nC @ 10V	900pF @ 25V	±16V	-	75W (Tc)	35 mOhm @ 29A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQI11P06TU	Fairchild/ON Semiconductor	MOSFET P-CH 60V 11.4A I2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 53W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,000	MOSFET (Metal Oxide)	60V	11.4A (Tc)	10V	4V @ 250µA	17nC @ 10V	550pF @ 25V	±25V	-	3.13W (Ta), 53W (Tc)	175 mOhm @ 5.7A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF734PBF	Vishay Siliconix	MOSFET N-CH 450V 4.9A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock21,900	MOSFET (Metal Oxide)	450V	4.9A (Tc)	10V	4V @ 250µA	45nC @ 10V	680pF @ 25V	±20V	-	74W (Tc)	1.2 Ohm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
BSC0502NSIATMA1	Infineon Technologies	MOSFET N-CH 30V 26A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,784	MOSFET (Metal Oxide)	30V	26A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	26nC @ 10V	1600pF @ 15V	±20V	-	2.5W (Ta), 43W (Tc)	2.3 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IXTH72N20T	IXYS	MOSFET N-CH 200V 72A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock4,448	MOSFET (Metal Oxide)	200V	72A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
SIHF23N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 23A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2418pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 158 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,312	MOSFET (Metal Oxide)	600V	23A (Tc)	10V	4V @ 250µA	95nC @ 10V	2418pF @ 100V	±30V	-	35W (Tc)	158 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
AOTF22N50	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 500V 22A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,696	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	4.5V @ 250µA	83nC @ 10V	3710pF @ 25V	±30V	-	50W (Tc)	260 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
STL75NH3LL	STMicroelectronics	MOSFET N-CH 30V 20A POWERFLAT6X5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (6x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,600	MOSFET (Metal Oxide)	30V	75A (Tc)	4.5V, 10V	1V @ 250µA	24nC @ 4.5V	1810pF @ 25V	±16V	-	60W (Tc)	5.7 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (6x5)	8-PowerVDFN
SI4686DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 5.2W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,203,804	MOSFET (Metal Oxide)	30V	18.2A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	1220pF @ 15V	±20V	-	3W (Ta), 5.2W (Tc)	9.5 mOhm @ 13.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PSMN017-80BS,118	Nexperia USA Inc.	MOSFET N-CH 80V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1573pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 103W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,776	MOSFET (Metal Oxide)	80V	50A (Tc)	10V	4V @ 1mA	26nC @ 10V	1573pF @ 40V	±20V	-	103W (Tc)	17 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9Y58-75B,115	Nexperia USA Inc.	MOSFET N-CH 75V 20.73A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 20.73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1137pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 60.4W (Tc) Rds On (Max) @ Id, Vgs: 53 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,448	MOSFET (Metal Oxide)	75V	20.73A (Tc)	5V, 10V	2.15V @ 1mA	10.7nC @ 5V	1137pF @ 25V	±15V	-	60.4W (Tc)	53 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
STD70N6F3	STMicroelectronics	MOSFET N-CH 60V 70A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,012	MOSFET (Metal Oxide)	60V	70A (Tc)	10V	4V @ 250µA	35nC @ 10V	2200pF @ 25V	±20V	-	110W (Tc)	10.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4P40TM_AM002	Fairchild/ON Semiconductor	MOSFET P-CH 400V 2.7A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.1 Ohm @ 1.35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,840	MOSFET (Metal Oxide)	400V	2.7A (Tc)	10V	5V @ 250µA	23nC @ 10V	680pF @ 25V	±30V	-	2.5W (Ta), 50W (Tc)	3.1 Ohm @ 1.35A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD4243_F085	Fairchild/ON Semiconductor	MOSFET P-CH 40V 6.7A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 6.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock510,000	MOSFET (Metal Oxide)	40V	6.7A (Ta), 14A (Tc)	4.5V, 10V	3V @ 250µA	29nC @ 10V	1550pF @ 20V	±20V	-	50W (Tc)	44 mOhm @ 6.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
SSM3K310T(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 5A S-MOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 4A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock22,092	MOSFET (Metal Oxide)	20V	5A (Ta)	1.5V, 4V	-	14.8nC @ 4V	1120pF @ 10V	±10V	-	700mW (Ta)	28 mOhm @ 4A, 4V	150°C (TJ)	Surface Mount	TSM	TO-236-3, SC-59, SOT-23-3
IPD034N06N3 G	Infineon Technologies	MOSFET N-CH 60V 100A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock446,256	MOSFET (Metal Oxide)	60V	100A (Tc)	10V	4V @ 93µA	130nC @ 10V	11000pF @ 30V	±20V	-	167W (Tc)	3.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
RA1C030LDT5CL	Rohm Semiconductor	NCH 20V 3.0A, SMM1006, SMM1006: FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V Vgs (Max): +7V, -0.2V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DSN1006-3 Package / Case: 3-XFDFN	Package: -	Stock44,607	MOSFET (Metal Oxide)	20 V	3A (Ta)	1.8V, 4.5V	1.5V @ 1mA	1.5 nC @ 4.5 V	150 pF @ 10 V	+7V, -0.2V	-	1W (Ta)	140mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	DSN1006-3	3-XFDFN
UPA1902TE-T1-AT	Renesas	UPA1902TE-T1-AT - N-CHANNEL MOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 3.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SC-95 Package / Case: SC-95	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	7A (Ta)	4.5V, 10V	2.5V @ 1mA	8 nC @ 5 V	780 pF @ 10 V	±20V	-	200mW (Ta)	22mOhm @ 3.5A, 10V	150°C	Surface Mount	SC-95	SC-95
SSF2300	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 4.5A, 20V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.5A Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock35,595	MOSFET (Metal Oxide)	20 V	4.5A	2.5V, 4.5V	1.2V @ 250µA	4 nC @ 4.5 V	300 pF @ 10 V	±12V	-	1.3W	55mOhm @ 3.6A, 4.5V	-55°C ~ 150°C	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SQD40N10-25-T4_GE3	Vishay Siliconix	MOSFET N-CH 100V 40A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	70 nC @ 10 V	3380 pF @ 25 V	±20V	-	136W (Tc)	25mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63