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AD8022ARMZ-REEL7

hot AD8022ARMZ-REEL7

AD8022ARMZ-REEL7

For Reference Only

Part Number AD8022ARMZ-REEL7
Manufacturer Analog Devices Inc.
Description IC OPAMP VFB 130MHZ 8MSOP
Datasheet AD8022ARMZ-REEL7 Datasheet
Package 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock 1380 piece(s)
Unit Price $ 3.136 *
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AD8022ARMZ-REEL7

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AD8022ARMZ-REEL7 Specifications

ManufacturerAnalog Devices Inc.
CategoryIntegrated Circuits (ICs) - Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
Datasheet AD8022ARMZ-REEL7 Datasheet
Package8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Series-
Amplifier TypeVoltage Feedback
Number of Circuits2
Slew Rate50 V/µs
-3db Bandwidth130MHz
Current - Input Bias2.5µA
Voltage - Input Offset1.5mV
Current - Supply4mA
Current - Output / Channel55mA
Voltage - Supply, Single/Dual (��)4.5 V ~ 26 V, ��2.25 V ~ 13 V
Operating Temperature-40°C ~ 85°C
Mounting TypeSurface Mount
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package8-MSOP

AD8022ARMZ-REEL7 Datasheet

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Page 2

Dual High Speed, Low Noise Op Amp Data Sheet AD8022 Rev. C Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2011 Analog Devices, Inc. All rights reserved. FEATURES Low power amplifiers provide low noise and low distortion, ideal for xDSL modem receiver Wide supply range: +5 V, ±2.5 V to ±12 V voltage supply Low power consumption: 4.0 mA/Amp Voltage feedback Ease of Use Lower total noise (insignificant input current noise contribution compared to current feedback amps) Low noise and distortion 2.5 nV/√Hz voltage noise @ 100 kHz 1.2 pA/√Hz current noise MTPR < −66 dBc (G = +7) SFDR 110 dB @ 200 kHz High speed 130 MHz bandwidth (−3 dB), G = +1 Settling time to 0.1%, 68 ns 50 V/μs slew rate High output swing: ±10.1 V on ±12 V supply Low offset voltage, 1.5 mV typical APPLICATIONS Receiver for ADSL, VDSL, HDSL, and proprietary xDSL systems Low noise instrumentation front end Ultrasound preamps Active filters 16-bit ADC buffers FUNCTIONAL BLOCK DIAGRAM AD8022 1 2 3 4 8 7 6 5 OUT1 –IN1 +IN1 –VS +VS OUT2 –IN2 +IN2 0 1 0 5 3 -0 0 1– + – + Figure 1. GENERAL DESCRIPTIONS The AD8022 consists of two low noise, high speed, voltage feedback amplifiers. Each amplifier consumes only 4.0 mA of quiescent current, yet has only 2.5 nV/√Hz of voltage noise. These dual amplifiers provide wideband, low distortion performance, with high output current optimized for stability when driving capacitive loads. Manufactured on ADI’s high voltage generation of XFCB bipolar process, the AD8022 operates on a wide range of supply voltages. The AD8022 is available in both an 8-lead MSOP and an 8-lead SOIC. Fast over voltage recovery and wide bandwidth make the AD8022 ideal as the receive channel front end to an ADSL, VDSL, or proprietary xDSL transceiver design. In an xDSL line interface circuit, the AD8022’s op amps can be configured as the differential receiver from the line transformer or as independent active filters. FREQUENCY (Hz) (p A / H z, n V / H z) 100 10 1 10 10M1M100k10k1k100 0 1 0 5 3 -0 0 2 iN (pA/ Hz) eN (nV/ Hz) Figure 2. Current and Voltage Noise vs. Frequency

Page 3

AD8022 Data Sheet Rev. C | Page 2 of 16 TABLE OF CONTENTS Specifications..................................................................................... 3 Absolute Maximum Ratings............................................................ 5 Maximum Power Dissipation ..................................................... 5 ESD Caution.................................................................................. 5 Typical Performance Characteristics ............................................. 6 Theory of Operation ...................................................................... 12 Applications..................................................................................... 13 DMT Modulation and Multitone Power Ratio (MTPR)....... 13 Channel Capacity and SNR....................................................... 13 Power Supply and Decoupling.................................................. 13 Layout Considerations............................................................... 15 Outline Dimensions ....................................................................... 16 Ordering Guide .......................................................................... 16 REVISION HISTORY 8/11—Rev. B to Rev. C Changes to Figure 40 ......................................................................14 Updated Outline Dimensions........................................................16 Changes to Ordering Guide...........................................................16 5/05—Rev. A to Rev. B Changes to Format .............................................................Universal Deleted Evaluation Boards Section.............................................. 14 Deleted Generating DMT Section................................................ 14 Changes to Ordering Guide.......................................................... 16 Updated Outline Dimensions....................................................... 16 9/02—Rev. 0 to Rev. A Changes to Features ..........................................................................1 Changes to Applications...................................................................1 Changes to Product Description .....................................................1 Changes to Functional Block Diagram ..........................................1 Changes to Figure 1...........................................................................1 Changes to Specifications Table......................................................2 Edits to TPCs 1, 2, 3, 6 ......................................................................5 New TPCs 7, 8....................................................................................6 Edits to TPCs 16, 17, 18....................................................................7 Edits to TPC 19 ..................................................................................8 Edits to TPC 28 ..................................................................................9 Edits to Figure 3...............................................................................11 Edits to Figure 6...............................................................................14 Updated Outline Dimensions........................................................16

Page 4

Data Sheet AD8022 Rev. C | Page 3 of 16 SPECIFICATIONS At 25°C, VS = ±12 V, RL = 500 Ω, G = +1, TMIN = –40°C, TMAX = +85°C, unless otherwise noted. Table 1. Parameter Conditions Min Typ Max Unit DYNAMIC PERFORMANCE −3 dB Small Signal Bandwidth VOUT = 50 mV p-p 110 130 MHz Bandwidth for 0.1 dB Flatness VOUT = 50 mV p-p 25 MHz Large Signal Bandwidth1 VOUT = 4 V p-p 4 MHz Slew Rate VOUT = 2 V p-p, G = +2 40 50 V/μs Rise and Fall Time VOUT = 2 V p-p, G = +2 30 ns Settling Time 0.1% VOUT = 2 V p-p 62 ns Overdrive Recovery Time VOUT = 150% of max output voltage, G = +2 200 ns NOISE/DISTORTION PERFORMANCE Distortion VOUT = 2 V p-p Second Harmonic fC = 1 MHz −95 dBc Third Harmonic fC = 1 MHz −100 dBc Multitone Input Power Ratio2 G = +7 differential 26 kHz to 132 kHz −67.2 dBc 144 kHz to 1.1 MHz −66 dBc Voltage Noise (RTI) f = 100 kHz 2.5 nV/√Hz Input Current Noise f = 100 kHz 1.2 pA/√Hz DC PERFORMANCE Input Offset Voltage −1.5 ±6 mV TMIN to TMAX ±7.25 mV Input Offset Current ±120 nA Input Bias Current 2.5 5.0 μA TMIN to TMAX ±7.5 μA Open-Loop Gain 72 dB INPUT CHARACTERISTICS Input Resistance (Differential) 20 kΩ Input Capacitance 0.7 pF Input Common-Mode Voltage Range −11.25 to +11.75 V Common-Mode Rejection Ratio VCM = ±3 V 98 dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 500 Ω ±10.1 V RL = 2 kΩ ±10.6 V Linear Output Current G = +1, RL = 150 Ω, dc error = 1% ±55 mA Short-Circuit Output Current 100 mA Capacitive Load Drive RS = 0 Ω, <3 dB of peaking 75 pF POWER SUPPLY Operating Range +4.5 ±13.0 V Quiescent Current 4.0 5.5 mA/Amp TMIN to TMAX 6.1 mA/Amp Power Supply Rejection Ratio VS = ±5V to ±12 V 80 dB OPERATING TEMPERATURE RANGE −40 +85 °C 1 FPBW = Slew Rate/(2π VPEAK). 2 Multitone testing performed with 800 mV rms across a 500 Ω load at Point A and Point B on the circuit of Figure 23.

Page 5

AD8022 Data Sheet Rev. C | Page 4 of 16 At 25°C, VS = ±2.5 V, RL = 500 Ω, G = +1, TMIN = –40°C, TMAX = +85°C, unless otherwise noted. Table 2. Parameter Conditions Min Typ Max Unit DYNAMIC PERFORMANCE −3 dB Small Signal Bandwidth VOUT = 50 mV p-p 100 120 MHz Bandwidth for 0.1 dB Flatness VOUT = 50 mV p-p 22 MHz Large Signal Bandwidth1 VOUT = 3 V p-p 4 MHz Slew Rate VOUT = 2 V p-p, G = +2 30 42 V/μs Rise and Fall Time VOUT = 2 V p-p, G = +2 40 ns Settling Time 0.1% VOUT = 2 V p-p 75 ns Overdrive Recovery Time VOUT = 150% of max output voltage, G = +2 225 ns NOISE/DISTORTION PERFORMANCE Distortion VOUT = 2 V p-p Second Harmonic fC = 1 MHz −77.5 dBc Third Harmonic fC = 1 MHz −94 dBc Multitone Input Power Ratio2 G = +7 differential, VS = ±6 V 26 kHz to 132 kHz −69 dBc 144 kHz to 1.1 MHz −66.7 dBc Voltage Noise (RTI) f = 100 kHz 2.3 nV/√Hz Input Current Noise f = 100 kHz 1 pA/√Hz DC PERFORMANCE Input Offset Voltage −0.8 ±5.0 mV TMIN to TMAX ±6.25 mV Input Offset Current ±65 nA Input Bias Current 2.0 5.0 μA TMIN to TMAX 7.5 μA Open-Loop Gain 64 dB INPUT CHARACTERISTICS Input Resistance (Differential) 20 kΩ Input Capacitance 0.7 pF Input Common-Mode Voltage Range −1.83 to +2.0 V Common-Mode Rejection Ratio VCM = ±2.5 V, VS = ±5.0 V 98 dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 500 Ω −1.38 to +1.48 V Linear Output Current G = +1, RL = 100 Ω, dc error = 1% ±32 mA Short-Circuit Output Current 80 mA Capacitive Load Drive RS = 0 Ω, <3 dB of peaking 75 pF POWER SUPPLY Operating Range +4.5 ±13.0 V Quiescent Current 3.5 4.25 mA/Amp TMIN to TMAX 4.4 mA/Amp Power Supply Rejection Ratio ∆VS = ±1 V 86 dB OPERATING TEMPERATURE RANGE −40 +85 °C 1 FPBW = Slew Rate/(2 π VPEAK). 2 Multitone testing performed with 800 mV rms across a 500 Ω load at Point A and Point B on the circuit of Figure 23.

Page 6

Data Sheet AD8022 Rev. C | Page 5 of 16 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating Supply Voltage (+VS to −VS) 26.4 V Internal Power Dissipation1 8-Lead SOIC (R) 1.6 W 8-Lead MSOP (RM) 1.2 W Input Voltage (Common Mode) ±VS Differential Input Voltage ±0.8 V Output Short-Circuit Duration Observe Power Derating Curves Storage Temperature Range −65°C to +125°C Operating Temperature Range (A Grade) −40°C to +85°C Lead Temperature Range (Soldering 10 sec) 300°C 1 Specification is for the device in free air: 8-Lead SOIC: θJA = 160°C/W. 8-Lead MSOP: θJA = 200°C/W. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated by the AD8022 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure. While the AD8022 is internally short-circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves. AMBIENT TEMPERATURE (°C) M A X IM U M P O W E R D IS S IP A T IO N ( W ) 2.0 1.5 1.0 0.5 0 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 0 1 0 5 3 -0 0 3 TJ = 150°C 8-LEAD SOIC PACKAGE 8-LEAD MSOP Figure 3. Maximum Power Dissipation vs. Temperature ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

Page 7

AD8022 Data Sheet Rev. C | Page 6 of 16 TYPICAL PERFORMANCE CHARACTERISTICS FREQUENCY (MHz) (d B ) 5 2 1 3 4 0 –5 –4 –3 –2 –1 0.1 1 10 100 500 0 1 0 5 3 -0 0 4 RF 50Ω 50Ω 50Ω VIN VOUT RF = 715Ω RF = 0Ω RF = 402Ω Figure 4. Frequency Response vs. RF, G = +1, VS = ±12 V, VIN = 63 mV p-p FREQUENCY (Hz) (d B ) 0.4 0.1 0 0.2 0.3 –0.1 –0.6 –0.5 –0.4 –0.3 –0.2 100k 1M 10M 100M 0 1 0 5 3 -0 0 5   G = +2 RL = 500Ω ±12V ±5.0V ±2.5V Figure 5. Fine-Scale Gain Flatness vs. Frequency, G = +2 FREQUENCY (Hz) (d B ) 0.4 0.1 0 0.2 0.3 –0.1 –0.6 –0.5 –0.4 –0.3 –0.2 100k 1M 10M 100M 0 1 0 5 3 -0 0 6 G = +2 RL = 500Ω ±12V ±5.0V ±2.5V Figure 6. Fine-Scale Gain Flatness vs. Frequency, G = +1 FREQUENCY (MHz) (d B ) 5 2 1 3 4 0 –5 –4 –3 –2 –1 0.1 1 10 100 500 0 1 0 5 3 -0 0 7 402Ω 453Ω 56.2Ω 50Ω VIN VOUT VIN = 0.05V p-p VIN = 0.2V p-p VIN = 2.0V p-p VIN = 0.8V p-p VIN = 0.4V p-p Figure 7. Frequency Response vs. Signal Level, VS = ±12 V, G = +1 FREQUENCY (kHz) F R E Q U E N C Y R E S P O N C E ( d B ) 5 2 1 3 4 0 –5 –4 –3 –2 –1 0.1 1 10 100 500 0 1 0 5 3 -0 0 8 453Ω 715Ω 715Ω 56.2Ω 50Ω VIN VOUTRS CL 50pF 30pF 0pF Figure 8. Frequency Response vs. Capacitive Load; CL = 0 pF and 50 pF; RS = 0 Ω SUPPLY VOLTAGE (±V) F R E Q U E N C Y ( M H z) 140 80 60 100 120 40 0 20 0 2 4 6 8 10 12 14 0 1 0 5 3 -0 0 9 G = +1, RF = 402Ω G = +2, RF = 715Ω Figure 9. Bandwidth vs. Supply, RL = 500 Ω, VIN = 200 mV p-p

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Data Sheet AD8022 Rev. C | Page 7 of 16 FREQUENCY (Hz) G A IN ( d B ) 80 30 60 50 70 40 0 20 10 –10 5k 10k 100k 10M1M 100M 500M 0 1 0 5 3 -0 1 0 Figure 10. Open-Loop Gain vs. Frequency FREQUENCY (Hz) F R E Q U E N C Y ( D eg re es ) 0 180 –180 5k 10k 100k 10M1M 100M 500M 0 1 0 5 3 -0 1 1 Figure 11. Open-Loop Phase vs. Frequency 01 05 3- 01 2 OUTPUT INPUT 100mV 100mV 100ns 100 90 10 0% Figure 12. Noninverting Small Signal Pulse Response, RL = 500 Ω, VS = ±12 V, G = +1, RF = 0 Ω 01 05 3- 01 3 OUTPUT INPUT 100mV 100mV 100ns 100 90 10 0% Figure 13. Noninverting Small Signal Pulse Response, RL = 500 Ω, VS = ±2.5 V, G = +1, RF = 0 Ω 01 05 3- 01 4 OUTPUT INPUT 2.00V 2.00V 100ns 100 90 10 0% Figure 14. Noninverting Large Signal Pulse Response, RL = 500 Ω, VS = ±12 V, G = +1, RF = 0 Ω 01 05 3- 01 5 OUTPUT INPUT 1.00V 1.00V 100ns 100 90 10 0% Figure 15. Noninverting Large Signal Pulse Response, RL = 500 Ω, VS = ±2.5 V, G = +1, RF = 0 Ω

Page 9

AD8022 Data Sheet Rev. C | Page 8 of 16 TIME (ns) S E T T L IN G E R R O R ( % ) 0.4 0.2 0.1 0.3 0 –0.4 –0.3 –0.2 –0.1 0 20 40 60 80 100 120 0 1 0 5 3 -0 1 6 +0.1% –0.1% Figure 16. Settling Time to 0.1%, VS = ±12 V, Step Size = 2 V p-p, G = +2, RL = 500 Ω TIME (ns) S E T T L IN G E R R O R ( % ) 0.4 0.2 0.1 0.3 0 –0.4 –0.3 –0.2 –0.1 0 20 40 60 80 100 120 0 1 0 5 3 -0 1 7 +0.1% –0.1% Figure 17. Settling Time to 0.1%, VS = ±2.5 V, Step Size = 2 V p-p, G = +2, RL = 500 Ω SUPPLY VOLTAGE (V) S L E W R A T E ( V /μ s) 70 50 40 60 30 0 10 20 2.5 4.5 6.5 8.5 10.5 12.5 0 1 0 5 3 -0 1 8 NEGATIVE EDGE POSITIVE EDGE Figure 18. Slew Rate vs. Supply Voltage, G = +2 FREQUENCY (Hz) H A R M O N IC D IS T O R T IO N ( d B ) –50 –60 –70 –80 –90 –130 –120 –110 –100 1k 10k 100k 1M 10M 0 1 0 5 3 -0 1 9 3RD 2ND Figure 19. Distortion vs. Frequency, VS = ±12 V, RL = 500 Ω, RF = 0 Ω, VOUT = 2 V p-p, G = +1 FREQUENCY (Hz) H A R M O N IC D IS T O R T IO N ( d B ) –50 –60 –70 –80 –90 –130 –120 –110 –100 1k 10k 100k 1M 10M 0 1 0 5 3 -0 2 0 3RD 2ND Figure 20. Distortion vs. Frequency, VS = ±2.5 V, RL = 500 Ω, RF = 0 Ω, VOUT = 2 V p-p, G = +1 OUTPUT VOLTAGE (V p-p) H A R M O N IC D IS T O R T IO N ( d B c) –20 –30 –40 –50 –60 –120 –100 –90 –80 –70 0 5 10 15 20 0 1 0 5 3 -0 2 1 3RD 2ND Figure 21. Distortion vs. Output Voltage, VS = ±12 V, G = +2, f = 1 MHz, RL = 500 Ω, RF = 715 Ω

Page 10

Data Sheet AD8022 Rev. C | Page 9 of 16 OUTPUT VOLTAGE (V p-p) H A R M O N IC D IS T O R T IO N ( d B c) 0 –20 –40 –60 –120 –100 –80 0 1.50.5 1.0 2.0 2.5 3.0 0 1 0 5 3 -0 2 2 3RD 2ND Figure 22. Distortion vs. Output Voltage, VS = ±2.5 V, G = +1, f = 1 MHz, RL = 500 Ω, RF = 0 Ω +V –V AD8022 1/2 AD8022 1/2 250Ω 715Ω 715Ω 500Ω 0 1 0 5 3 -0 2 3 Figure 23. Multitone Power Ratio Test Circuit FREQUENCY (kHz) 10 d B /D IV ( d B c) 549.3 559.3558.3557.3556.3555.3554.3553.3552.3551.3550.3 0 1 0 5 3 -0 2 4 –66.0dBc Figure 24. Multitone Power Ratio: VS = ±12 V, RL = 500 Ω, Full Rate ADSL (DMT), Downstream FREQUENCY (kHz) 10 d B /D IV ( d B c) 102.4 103.4 104.4 105.4 106.4 107.4 108.4 109.4 112.4111.4110.4 0 1 0 5 3 -0 2 5 –67.2dBc Figure 25. Multitone Power Ratio: VS = ±12 V, RL = 500 Ω, Full Rate ADSL (DMT), Upstream FREQUENCY (kHz) 10 d B /D IV ( d B c) 549.3 559.3558.3557.3556.3555.3554.3553.3552.3551.3550.3 0 1 0 5 3 -0 2 6 –66.7dBc Figure 26. Multitone Power Ratio: VS = ±6 V, RL = 500 Ω, Full Rate ADSL (DMT), Downstream FREQUENCY (kHz) 10 d B /D IV ( d B c) 102.4 103.4 104.4 105.4 106.4 107.4 108.4 109.4 112.4111.4110.4 0 1 0 5 3 -0 2 7 –69.0dBc Figure 27. Multitone Power Ratio: VS = ±6 V, RL = 500 Ω, Full Rate ADSL (DMT), Upstream

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