Contact Us +86-755-83210559 ext. 811




For Reference Only

Part Number AON2406
Manufacturer Alpha & Omega Semiconductor Inc.
Description MOSFET N-CH 20V 8A 6LDFN
Datasheet AON2406 Datasheet
Package 6-UDFN Exposed Pad
In Stock 4,500 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Jul 15 - Jul 20 (Choose Expedited Shipping)
Request for Quotation

Part Number # AON2406 (Transistors - FETs, MOSFETs - Single) is manufactured by Alpha & Omega Semiconductor Inc. and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For AON2406 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add AON2406 with quantity into BOM. does NOT require any registration to request a quote of AON2406.

AON2406 Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet AON2406Datasheet
Package6-UDFN Exposed Pad
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1140pF @ 10V
Vgs (Max)��8V
FET Feature-
Power Dissipation (Max)2.8W (Ta)
Rds On (Max) @ Id, Vgs12.5 mOhm @ 8A, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-DFN-EP (2x2)
Package / Case6-UDFN Exposed Pad

AON2406 Datasheet

Page 1

Page 2

AON2406 20V N-Channel MOSFET General Description Product Summary VDS ID (at VGS=4.5V) 8A RDS(ON) (at VGS=4.5V) < 12.5mΩ RDS(ON) (at VGS=2.5V) < 15mΩ RDS(ON) (at VGS=1.8V) < 19mΩ RDS(ON) (at VGS=1.5V) < 24mΩ Symbol The AON2406 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Maximum UnitsParameter Absolute Maximum Ratings TA=25°C unless otherwise noted 20V G D S DFN 2x2B Top View Bottom View Pin 1 D D G D D S D S Pin 1 VDS VGS IDM TJ, TSTG Symbol t ≤ 10s Steady-State Gate-Source Voltage Drain-Source Voltage 20 °C/W RθJA 37 66 32 45 Thermal Characteristics Units Maximum Junction-to-Ambient A TA=25°C Pulsed Drain Current C Parameter 6 V ID A TA=70°C Continuous Drain Current G 8 V±8 °C/WMaximum Junction-to-Ambient A D 80 Power Dissipation A PD W TA=70°C 1.8 TA=25°C °C Typ Max 2.8 Junction and Storage Temperature Range -55 to 150 Rev 0 : March. 2012 Page 1 of 5

Page 3

AON2406 Symbol Min Typ Max Units BVDSS 20 V VDS=20V, VGS=0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 0.4 0.67 1.0 V ID(ON) 32 A 10 12.5 TJ=125°C 13.5 17 11.5 15 mΩ 14 19 mΩ 17 24 mΩ gFS 50 S VSD 0.6 1 V IS 4.5 A Ciss 1140 pF Coss 165 pF Crss 110 pF Rg 2.2 Ω Qg 12.5 18 nC Qgs 1.2 nC Qgd 2.7 nC t 2.7 ns Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Reverse Transfer Capacitance VGS=0V, VDS=10V, f=1MHz SWITCHING PARAMETERS Gate resistance VGS=0V, VDS=0V, f=1MHz Gate Source Charge Gate Drain Charge Total Gate Charge VGS=4.5V, VDS=10V, ID=8A Zero Gate Voltage Drain Current Gate-Body leakage current mΩ IS=1A,VGS=0V VDS=5V, ID=8A VGS=1.5V, ID=1A Forward Transconductance Diode Forward Voltage VGS=2.5V, ID=6A VGS=1.8V, ID=4A Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=4.5V, VDS=5V VGS=4.5V, ID=8A RDS(ON) Static Drain-Source On-Resistance IDSS µA VDS=VGS,ID=250µA VDS=0V, VGS=±8V D(on) tr 3 ns tD(off) 37 ns tf 7 ns trr 11 ns Qrr 3 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs Turn-On Rise Time Turn-Off DelayTime IF=8A, dI/dt=100A/µs VGS=4.5V, VDS=10V, RL=1.25Ω, RGEN=3Ω Turn-Off Fall Time Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev 0 : March. 2012 Page 2 of 5

Page 4

AON2406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 0 3 6 9 12 15 0 0.5 1 1.5 2 I D (A ) VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 8 10 12 14 16 18 20 0 3 6 9 12 15 R D S (O N ) (m ΩΩ ΩΩ ) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 N o rm a li z e d O n -R e s is ta n c e Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) VGS=2.5V ID=6A VGS=4.5V ID=8A 25°C 125°C VDS=5V VGS=1.8V VGS=4.5V 0 10 20 30 40 50 0 1 2 3 4 5 I D (A ) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=1.5V 1.8V 4.5V 2.5V 3.5V VGS=2.5V VGS=1.8V ID=4A VGS=1.5V VGS=1.5V ID=1A 40 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 I S (A ) VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 25°C 125°C 0 5 10 15 20 25 0 2 4 6 8 10 R D S (O N ) (m ΩΩ ΩΩ ) VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) ID=8A 25°C 125°C Rev 0 : March. 2012 Page 3 of 5

Page 5

AON2406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 0 1 2 3 4 5 0 3 6 9 12 15 V G S (V o lt s ) Qg (nC) Figure 7: Gate-Charge Characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 C a p a c it a n c e ( p F ) VDS (Volts) Figure 8: Capacitance Characteristics Ciss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 P o w e r (W ) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Coss Crss VDS=10V ID=8A TJ(Max)=150°C TA=25°C 10µs 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 I D (A m p s ) VDS (Volts) Figure 9: Maximum Forward Biased 10µs 10ms 1ms DC RDS(ON) limited TJ(Max)=150°C TA=25°C 100µs 40 Ambient (Note F) 0.001 0.01 0.1 1 10 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Z θθ θθJ C N o rm a li z e d T ra n s ie n t T h e rm a l R e s is ta n c e Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Single Pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC Ton T PD In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Safe Operating Area (Note F) RθJA=80°C/W Rev 0 : March. 2012 Page 4 of 5

AON2406 Reviews

Average User Rating
5 / 5 (107)
★ ★ ★ ★ ★
5 ★
4 ★
3 ★
2 ★
1 ★

Write a Review

Not Rated
Thanks for Your Review!


June 28, 2020

Used this on starter solenoid and works as expected.


June 28, 2020

The specs range is wide for a selection and the customer service is great.


June 26, 2020

Order arrived to Estonia in 3 days. Item as described. Well packed.


June 13, 2020

Heisener is awesome! Never any issues whatsoever. Product selection is good and delivery is on time.


June 12, 2020

Reasonable prices, fast shipping, and the best customer service I've ever experienced! Absolutely will share it to my friends.

Asa *****iamson

June 6, 2020

Always have what I need, fast and easy for making an order, fast shipping and great service! That about covers it! Many Thanks!


May 23, 2020

Your prices are low and your website is customer-use friendly.


May 17, 2020

So far all the items still work. I'm using these for some home made solar panels and they're doing great.


May 17, 2020

The fastest shipping I've seen yet


May 14, 2020

Best way to locate what I need, on a fast and efficient shipping! Keep up the good work!

AON2406 Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

AON2406 Packaging

Verify Products
Customized Labels
Professional Packaging

AON2406 Related Products

SIT8209AI-GF-25E-133.333333T SIT8209AI-GF-25E-133.333333T SiTIME, -40 TO 85C, 2520, 10PPM, 2.5V, 1, -, - View
1206Y5003P90CFT 1206Y5003P90CFT Knowles Syfer, CAP CER 3.9PF 500V C0G/NP0 1206, 1206 (3216 Metric), - View
BD239F-S BD239F-S Bourns Inc., TRANS NPN 160V 2A, TO-220-3, - View
1N5919BG 1N5919BG ON Semiconductor, DIODE ZENER 5.6V 3W AXIAL, DO-204AL, DO-41, Axial, - View
hotMC7805CD2TR4G MC7805CD2TR4G ON Semiconductor, IC REG LINEAR 5V 1A D2PAK, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, - View
hotLQW18AN36NJ00D LQW18AN36NJ00D Murata, FIXED IND 36NH 400MA 260 MOHM, 0603 (1608 Metric), - View
87900-430HLF 87900-430HLF Amphenol FCI, HEADER BERGSTIK, -, - View
DF7-10P-3.96DS(01) DF7-10P-3.96DS(01) Hirose Electric Co Ltd, CONN HEADR 10POS 3.96MM R/A GOLD, -, - View
EBC06DSXI EBC06DSXI Sullins Connector Solutions, CONN EDGE DUAL FMALE 12POS 0.100, -, - View
VI-J7H-MX-B1 VI-J7H-MX-B1 Vicor Corporation, CONVERTER MOD DC/DC 52V 75W, Half Brick, - View
VI-J1J-CY-B1 VI-J1J-CY-B1 Vicor Corporation, CONVERTER MOD DC/DC 36V 50W, Half Brick, - View
XC6701D342FR-G XC6701D342FR-G Torex Semiconductor Ltd, 28V HIGH SPEED VOLTAGE REGULATOR, -, - View
Payment Methods
Delivery Services

Quick Inquiry


Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

Do you have any question about AON2406?

+86-755-83210559 ext. 811 heisener007 2354944915 Send Message

AON2406 Tags

  • AON2406
  • AON2406 PDF
  • AON2406 datasheet
  • AON2406 specification
  • AON2406 image
  • Alpha & Omega Semiconductor Inc.
  • Alpha & Omega Semiconductor Inc. AON2406
  • buy AON2406
  • AON2406 price
  • AON2406 distributor
  • AON2406 supplier
  • AON2406 wholesales

AON2406 is Available in