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DMN3030LFG-7

DMN3030LFG-7

DMN3030LFG-7

For Reference Only

Part Number DMN3030LFG-7
Manufacturer Diodes Incorporated
Description MOSFET N-CH 30V PWRDI3333-8
Datasheet DMN3030LFG-7 Datasheet
Package 8-PowerWDFN
In Stock 3,141 piece(s)
Unit Price $ 0.1783 *
Lead Time To be Confirmed
Estimated Delivery Time Aug 11 - Aug 16 (Choose Expedited Shipping)
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Part Number # DMN3030LFG-7 (Transistors - FETs, MOSFETs - Single) is manufactured by Diodes Incorporated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For DMN3030LFG-7 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add DMN3030LFG-7 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of DMN3030LFG-7.

DMN3030LFG-7 Specifications

ManufacturerDiodes Incorporated
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet DMN3030LFG-7Datasheet
Package8-PowerWDFN
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds751pF @ 10V
Vgs (Max)��25V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Rds On (Max) @ Id, Vgs18 mOhm @ 10A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI3333-8
Package / Case8-PowerWDFN

DMN3030LFG-7 Datasheet

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DMN3030LFG Document number: DS35499 Rev. 5 - 2 1 of 6 www.diodes.com March 2013 © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated. DMN3030LFG N E W P R O D U C T N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS RDS(ON) Package ID TA = +25°C 30V 18mΩ @ VGS = 10V POWERDI 3333-8 8.6A 27mΩ @ VGS = 4.5V 5.5A Description This new generation MOSFET has been designed to minimize the on- state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  DC-DC Converters  Power Management Functions Features  Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33% of the board area occupied by SO-8 enabling smaller end product  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)   Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: POWERDI3333-8  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish  Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.072 grams (approximate) Ordering Information (Note 4) Part Number Case Packaging DMN3030LFG-7 POWERDI3333-8 2000 / Tape & Reel DMN3030LFG-13 POWERDI3333-8 3000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information Bottom View Top View Internal SchematicTop View POWERDI3333-8 1 2 3 4 8 7 6 5 S S S G D D D D Pin 1 N30 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 10 for 2010) WW = Week code (01 – 53) N30 Y Y W W e3   Green

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DMN3030LFG Document number: DS35499 Rev. 5 - 2 2 of 6 www.diodes.com March 2013 © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated. DMN3030LFG N E W P R O D U C T Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C ID 5.3 4.2 A t<10s TA = +25°C TA = +70°C ID 6.8 5.2 A Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 8.6 6.8 A t<10s TA = +25°C TA = +70°C ID 11 8.8 A Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 70 A Maximum Body Diode continuous Current IS 3 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 0.9 W TA = +70°C 0.5 Thermal Resistance, Junction to Ambient (Note 5) Steady state RJA 148 °C/W t<10s 89 Total Power Dissipation (Note 6) TA = +25°C PD 2.3 W TA = +70°C 1.4 Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 56 °C/W t<10s 34 Thermal Resistance, Junction to Case (Note 6) RJC 6.9 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 100 nA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±1 µA VGS = ±25V, VDS = 0V — — 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 0.8 1.2 2.1 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) — 10 18 mΩ VGS = 10V, ID = 10A — 16 27 VGS = 4.5V, ID = 7.5A Forward Transfer Admittance |Yfs| — 6 — S VDS = 5V, ID = 10A Diode Forward Voltage VSD — 0.7 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 751 — pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 121 — Reverse Transfer Capacitance Crss — 110 — Gate Resistance Rg — 1.5 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge VGS = 4.5V Qg — 9 — nC VGS = 4.5V, VDS = 15V, ID =6A Total Gate Charge VGS = 10V Qg — 17.4 — VGS = 10V, VDS = 15V, ID = 6A Gate-Source Charge Qgs — 2.2 — Gate-Drain Charge Qgd — 3 — Turn-On Delay Time tD(on) — 2.5 — ns VDD = 15V, VGS = 10V, RG = 6Ω, RL = 1.8Ω, ID = 6.7A Turn-On Rise Time tr — 6.6 — Turn-Off Delay Time tD(off) — 19.0 — Turn-Off Fall Time tf — 6.3 — Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.

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DMN3030LFG Document number: DS35499 Rev. 5 - 2 3 of 6 www.diodes.com March 2013 © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated. DMN3030LFG N E W P R O D U C T 0 0.5 1.0 1.5 2.0 V , DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic DS 0 5 10 15 20 25 30 I , D R A IN C U R R E N T ( A ) D 0 5 10 15 20 25 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V , GATE-SOURCE VOLTAGE (V)GS Fig. 2 Typical Transfer Characteristics I , D R A IN C U R R E N T ( A ) D V = 5.0VDS T = 150°CA T = 125°CA T = 85°CA T = 25°CA T = -55°CA 0 0.004 0.008 0.012 0.016 0.020 0 5 10 15 20 25 30 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N )  I , DRAIN-SOURCE CURRENT (A)D Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage V = 4.5VGS V = 10VGS 0 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0 5 10 15 20 25 30 I , DRAIN CURRENT (A)D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N )  T = -55°CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA V = 4.5VGS -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Fig. 5 On-Resistance Variation with Temperature J  0.6 0.8 1.0 1.2 1.4 1.6 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( N O R M A L IZ E D ) D S (O N ) V = 4.5V I = 5A GS D V = V I = 10A GS D 10 0 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Fig. 6 On-Resistance Variation with Temperature J  V = 4.5V I = 5A GS D V = V I = 10A GS D 10 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N ) 

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DMN3030LFG Document number: DS35499 Rev. 5 - 2 4 of 6 www.diodes.com March 2013 © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated. DMN3030LFG N E W P R O D U C T 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature J  V , G A T E T H R E S H O LD V O LT A G E ( V ) G S (t h ) I = 1mAD I = 250µAD 0 5 10 15 20 25 30 I , S O U R C E C U R R E N T ( A ) S 0 0.2 0.4 0.6 0.8 1.0 1.2 V , SOURCE-DRAIN VOLTAGE (V)SD Fig. 8 Diode Forward Voltage vs. Current T = 25°CA 10 100 1,000 10,000 0 5 10 15 20 25 30 C , JU N C T IO N C A P A C IT A N C E ( p F ) T V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 9 Typical Junction Capacitance Ciss Coss Crss f = 1MHz 0 2 4 6 8 10 12 14 16 18 20 Q (nC)g, TOTAL GATE CHARGE Fig. 10 Gate Charge 0 2 4 6 8 10 V G A T E T H R E S H O LD V O LT A G E ( V ) G S , V = 15V I = A DS D 6 0 50 100 150 200 250 300 350 400 t1, PULSE DURATION TIME (sec) Fig. 11 Single Pulse Maximum Power Dissipation 0.001 0.01 0.1 1 10 100 1,0001E-041E-05 P , P E A K T R A N S IE N T P O IW E R ( W ) (P K ) Single Pulse R = 148 C/W R = r * R T - T = P * R     JA JA(t) (t) JA J A JA(t)  0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area DS 0.01 0.1 1 10 100 I , D R A IN C U R R E N T ( A ) D R Limited DS(on) T = 150°C T = 25°C J(max) A V = 10V Single Pulse GS DUT on 1 * MRP Board DC P = 10sW P = 1sW P = 100msW P = 10msW P = 1msW P = 100µsW P = 10 sW µ

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DMN3030LFG Document number: DS35499 Rev. 5 - 2 5 of 6 www.diodes.com March 2013 © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated. DMN3030LFG N E W P R O D U C T 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 13 Transient Thermal Resistance 0.001 0.01 0.1 1 r( t) , T R A N S IE N T T H E R M A L R E S IS TA N C E R (t) = r(t) * R R = 148°C/W Duty Cycle, D = t1/ t2    JA JA JA D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 Package Outline Dimensions Suggested Pad Layout POWERDI®3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3   0.203 b 0.27 0.37 0.32 b2   0.20 L 0.35 0.45 0.40 L1   0.39 e   0.65 Z   0.515 All Dimensions in mm Dimensions Value (in mm) C 0.650 G 0.230 G1 0.420 Y 3.700 Y1 2.250 Y2 1.850 Y3 0.700 X 2.370 X2 0.420 A A1 A3 D D2 E E2 b2 (4x) L (4x) L1 (3x) b (8x)eZ (4x) Pin 1 ID 1 4 8 5 X Y Y1 Y3 Y2 X2 C 1 4 8 5 G G1

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July 14, 2020

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June 19, 2020

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June 18, 2020

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DMN3030LFG-7 Guarantees

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