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DMN3030LFG-7

DMN3030LFG-7

DMN3030LFG-7

For Reference Only

Part Number DMN3030LFG-7
Manufacturer Diodes Incorporated
Description MOSFET N-CH 30V PWRDI3333-8
Datasheet DMN3030LFG-7 Datasheet
Package 8-PowerWDFN
In Stock 3141 piece(s)
Unit Price $ 0.1783 *
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Estimated Delivery Time Jan 21 - Jan 26 (Choose Expedited Shipping)
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DMN3030LFG-7

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DMN3030LFG-7 Specifications

ManufacturerDiodes Incorporated
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet DMN3030LFG-7 Datasheet
Package8-PowerWDFN
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25��C5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds751pF @ 10V
Vgs (Max)��25V
Power Dissipation (Max)900mW (Ta)
Rds On (Max) @ Id, Vgs18 mOhm @ 10A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI3333-8
Package / Case8-PowerWDFN

DMN3030LFG-7 Datasheet

Page 1

Page 2

DMN3030LFG Document number: DS35499 Rev. 5 - 2 1 of 6 www.diodes.com March 2013 © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated. DMN3030LFG N E W P R O D U C T N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS RDS(ON) Package ID TA = +25°C 30V 18mΩ @ VGS = 10V POWERDI 3333-8 8.6A 27mΩ @ VGS = 4.5V 5.5A Description This new generation MOSFET has been designed to minimize the on- state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  DC-DC Converters  Power Management Functions Features  Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33% of the board area occupied by SO-8 enabling smaller end product  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)   Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: POWERDI3333-8  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish  Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.072 grams (approximate) Ordering Information (Note 4) Part Number Case Packaging DMN3030LFG-7 POWERDI3333-8 2000 / Tape & Reel DMN3030LFG-13 POWERDI3333-8 3000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information Bottom View Top View Internal SchematicTop View POWERDI3333-8 1 2 3 4 8 7 6 5 S S S G D D D D Pin 1 N30 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 10 for 2010) WW = Week code (01 – 53) N30 Y Y W W e3   Green

Page 3

DMN3030LFG Document number: DS35499 Rev. 5 - 2 2 of 6 www.diodes.com March 2013 © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated. DMN3030LFG N E W P R O D U C T Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C ID 5.3 4.2 A t<10s TA = +25°C TA = +70°C ID 6.8 5.2 A Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 8.6 6.8 A t<10s TA = +25°C TA = +70°C ID 11 8.8 A Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 70 A Maximum Body Diode continuous Current IS 3 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 0.9 W TA = +70°C 0.5 Thermal Resistance, Junction to Ambient (Note 5) Steady state RJA 148 °C/W t<10s 89 Total Power Dissipation (Note 6) TA = +25°C PD 2.3 W TA = +70°C 1.4 Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 56 °C/W t<10s 34 Thermal Resistance, Junction to Case (Note 6) RJC 6.9 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 100 nA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±1 µA VGS = ±25V, VDS = 0V — — 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 0.8 1.2 2.1 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) — 10 18 mΩ VGS = 10V, ID = 10A — 16 27 VGS = 4.5V, ID = 7.5A Forward Transfer Admittance |Yfs| — 6 — S VDS = 5V, ID = 10A Diode Forward Voltage VSD — 0.7 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 751 — pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 121 — Reverse Transfer Capacitance Crss — 110 — Gate Resistance Rg — 1.5 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge VGS = 4.5V Qg — 9 — nC VGS = 4.5V, VDS = 15V, ID =6A Total Gate Charge VGS = 10V Qg — 17.4 — VGS = 10V, VDS = 15V, ID = 6A Gate-Source Charge Qgs — 2.2 — Gate-Drain Charge Qgd — 3 — Turn-On Delay Time tD(on) — 2.5 — ns VDD = 15V, VGS = 10V, RG = 6Ω, RL = 1.8Ω, ID = 6.7A Turn-On Rise Time tr — 6.6 — Turn-Off Delay Time tD(off) — 19.0 — Turn-Off Fall Time tf — 6.3 — Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.

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DMN3030LFG Document number: DS35499 Rev. 5 - 2 3 of 6 www.diodes.com March 2013 © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated. DMN3030LFG N E W P R O D U C T 0 0.5 1.0 1.5 2.0 V , DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic DS 0 5 10 15 20 25 30 I , D R A IN C U R R E N T ( A ) D 0 5 10 15 20 25 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V , GATE-SOURCE VOLTAGE (V)GS Fig. 2 Typical Transfer Characteristics I , D R A IN C U R R E N T ( A ) D V = 5.0VDS T = 150°CA T = 125°CA T = 85°CA T = 25°CA T = -55°CA 0 0.004 0.008 0.012 0.016 0.020 0 5 10 15 20 25 30 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N )  I , DRAIN-SOURCE CURRENT (A)D Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage V = 4.5VGS V = 10VGS 0 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0 5 10 15 20 25 30 I , DRAIN CURRENT (A)D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N )  T = -55°CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA V = 4.5VGS -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Fig. 5 On-Resistance Variation with Temperature J  0.6 0.8 1.0 1.2 1.4 1.6 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( N O R M A L IZ E D ) D S (O N ) V = 4.5V I = 5A GS D V = V I = 10A GS D 10 0 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Fig. 6 On-Resistance Variation with Temperature J  V = 4.5V I = 5A GS D V = V I = 10A GS D 10 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N ) 

Page 5

DMN3030LFG Document number: DS35499 Rev. 5 - 2 4 of 6 www.diodes.com March 2013 © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated. DMN3030LFG N E W P R O D U C T 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature J  V , G A T E T H R E S H O LD V O LT A G E ( V ) G S (t h ) I = 1mAD I = 250µAD 0 5 10 15 20 25 30 I , S O U R C E C U R R E N T ( A ) S 0 0.2 0.4 0.6 0.8 1.0 1.2 V , SOURCE-DRAIN VOLTAGE (V)SD Fig. 8 Diode Forward Voltage vs. Current T = 25°CA 10 100 1,000 10,000 0 5 10 15 20 25 30 C , JU N C T IO N C A P A C IT A N C E ( p F ) T V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 9 Typical Junction Capacitance Ciss Coss Crss f = 1MHz 0 2 4 6 8 10 12 14 16 18 20 Q (nC)g, TOTAL GATE CHARGE Fig. 10 Gate Charge 0 2 4 6 8 10 V G A T E T H R E S H O LD V O LT A G E ( V ) G S , V = 15V I = A DS D 6 0 50 100 150 200 250 300 350 400 t1, PULSE DURATION TIME (sec) Fig. 11 Single Pulse Maximum Power Dissipation 0.001 0.01 0.1 1 10 100 1,0001E-041E-05 P , P E A K T R A N S IE N T P O IW E R ( W ) (P K ) Single Pulse R = 148 C/W R = r * R T - T = P * R     JA JA(t) (t) JA J A JA(t)  0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area DS 0.01 0.1 1 10 100 I , D R A IN C U R R E N T ( A ) D R Limited DS(on) T = 150°C T = 25°C J(max) A V = 10V Single Pulse GS DUT on 1 * MRP Board DC P = 10sW P = 1sW P = 100msW P = 10msW P = 1msW P = 100µsW P = 10 sW µ

Page 6

DMN3030LFG Document number: DS35499 Rev. 5 - 2 5 of 6 www.diodes.com March 2013 © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated. DMN3030LFG N E W P R O D U C T 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 13 Transient Thermal Resistance 0.001 0.01 0.1 1 r( t) , T R A N S IE N T T H E R M A L R E S IS TA N C E R (t) = r(t) * R R = 148°C/W Duty Cycle, D = t1/ t2    JA JA JA D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 Package Outline Dimensions Suggested Pad Layout POWERDI®3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3   0.203 b 0.27 0.37 0.32 b2   0.20 L 0.35 0.45 0.40 L1   0.39 e   0.65 Z   0.515 All Dimensions in mm Dimensions Value (in mm) C 0.650 G 0.230 G1 0.420 Y 3.700 Y1 2.250 Y2 1.850 Y3 0.700 X 2.370 X2 0.420 A A1 A3 D D2 E E2 b2 (4x) L (4x) L1 (3x) b (8x)eZ (4x) Pin 1 ID 1 4 8 5 X Y Y1 Y3 Y2 X2 C 1 4 8 5 G G1

DMN3030LFG-7 Reviews

Average User Rating
5 / 5 (187)
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Prisc*****Kapur

October 23, 2019

I love this website, and get a quick response. Good experience! Good customer service.

Luk*****orton

October 18, 2019

They work great and I hope to find more used for the extra ones.

Brook*****Savant

June 2, 2019

Nice to have an assortment on hand, just in case. Happy with this purchase.

Barba*****nghal

May 20, 2019

This product works great what more can I say.

Opa*****neal

March 16, 2019

Received the parts, and all parts are in tight packaging without any problems, professional seller.

Hend*****Gade

February 15, 2019

Itams as described Fast and cheap shipping.

Kade*****kins

November 18, 2018

All items individually packed in anti static bags and properly labeled.

Gag*****anik

October 29, 2018

I recently became very interested in electronics and I have used several of them. They work great.

Eth*****Dixon

September 7, 2018

I wanted something that would handle voltage spikes. Worked perfectly. I plan to use four more.

Jaxo*****shop

September 3, 2018

Items as described, quick dispatch, took a while with shipment.

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