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DMN3730U-7

hot DMN3730U-7

DMN3730U-7

For Reference Only

Part Number DMN3730U-7
Manufacturer Diodes Incorporated
Description MOSFET N-CH 30V 750MA SOT23
Datasheet DMN3730U-7 Datasheet
Package TO-236-3, SC-59, SOT-23-3
In Stock 4000 piece(s)
Unit Price $ 0.1423 *
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DMN3730U-7

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DMN3730U-7 Specifications

ManufacturerDiodes Incorporated
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet DMN3730U-7 Datasheet
PackageTO-236-3, SC-59, SOT-23-3
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25��C750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds64.3pF @ 25V
Vgs (Max)��8V
Power Dissipation (Max)450mW (Ta)
Rds On (Max) @ Id, Vgs460 mOhm @ 200mA, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3

DMN3730U-7 Datasheet

Page 1

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DMN3730U Datasheet number: DS35308 Rev. 2 - 2 1 of 7 www.diodes.com July 2011 © Diodes Incorporated DMN3730U A Product Line of Diodes Incorporated 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V(BR)DSS Max RDS(on) ID Max (Note 5) TA = 25°C 30V 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Load switch • Portable applications • Power Management Functions Features and Benefits • Low VGS(th), can be driven directly from a battery • Low RDS(on) • “Lead Free”, RoHS Compliant (Note 1) • Halogen and Antimony Free. "Green" Device (Note 2) • ESD Protected Gate 2kV • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish-Matte Tin. • Weight: 0.08 grams (approximate) Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DMN3730U-7 N3U 7 8 3,000 Notes: 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year 2011 2012 2013 2014 2015 2016 2017 Code Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D N3U = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) SOT23 Top View Top View Pin-Out Equivalent Circuit D G S ESD PROTECTED TO 2kV Source Gate Drain Body Diode Gate Protection Diode N3U Y M

Page 3

DMN3730U Datasheet number: DS35308 Rev. 2 - 2 2 of 7 www.diodes.com July 2011 © Diodes Incorporated DMN3730U A Product Line of Diodes Incorporated Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current Steady State TA = 25°C (Note 5) TA = 85°C (Note 5) TA = 25°C (Note 4) ID 0.94 0.68 0.75 A Pulsed Drain Current (Note 6) IDM 10 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 0.45 W (Note 5) 0.71 W Thermal Resistance, Junction to Ambient (Note 4) RθJA 275 °C/W (Note 5) 177 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. Thermal Characteristics 0.001 0.01 0.1 1 10 100 1000 T1, PULSE DURATION SECTION (sec) Fig. 1 Single Maximum Power Dissipation 0 10 20 30 40 50 60 70 80 90 100 P (p k) , P E A K T R A N S IE N T P O W E R ( W ) Single Pulse Rthja = 176C/W Rthja(t) = Rthja*r(t) T - T = P*Rthja (t)J A 0.01 0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE Fig. 2 SOA, Safe Operation Area DS 100 0.001 0.01 0.1 1 10 I , D R A IN C U R R E N T ( A ) D I (A) @ P = 1s D W I (A) @ P = 1ms D W I (A) @ P = 100µs D W I (A) @ P = 10µs D W I (A) @ DCD I (A) @ P = 100ms D W I (A) @ P = 10ms D W R Limited DS(ON) T , (Max) = 150°C T = 25°C Single Pulse J A

Page 4

DMN3730U Datasheet number: DS35308 Rev. 2 - 2 3 of 7 www.diodes.com July 2011 © Diodes Incorporated DMN3730U A Product Line of Diodes Incorporated 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 R (t) = r(t)*R R = 176C/W Duty Cycle, D = t1/t2 θ θ θ JA JA JA t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance 0.001 0.01 0.1 1 R (t ), T R A N S IE N T T H E R M A L R E S IS IT A N C E r(t) @ D=Single Pulse r(t) @ D=0.005 r(t) @ D=0.01 r(t) @ D=0.01 r(t) @ D=0.05 r(t) @ D=0.1 r(t) @ D=0.3 r(t) @ D=0.5 r(t) @ D=0.7 r(t) @ D=0.9 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - 3 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 0.45 - 0.95 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance (Note 7) RDS(on) - - 460 mΩ VGS = 4.5V, ID = 200mA 560 VGS = 2.5V, ID = 100mA 730 VGS = 1.8V, ID = 75mA Forward Transfer Admittance |Yfs| 40 - - mS VDS = 3V, ID = 10mA Diode Forward Voltage (Note 7) VSD - 0.7 1.2 V VGS = 0V, IS = 300mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 64.3 - pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 6.1 - pF Reverse Transfer Capacitance Crss - 4.5 - pF Gate Resistance Rg - 70 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg - 1.6 - nC VGS = 4.5V, VDS = 15V, ID = 1A Gate-Source Charge Qgs - 0.2 - nC Gate-Drain Charge Qgd - 0.2 - nC Turn-On Delay Time tD(on) - 3.5 - ns VDS = 10V, ID = 1A VGS = 10V, RG = 6Ω Turn-On Rise Time tr - 2.8 - ns Turn-Off Delay Time tD(off) - 38 - ns Turn-Off Fall Time tf - 13 - ns Notes: 7. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing.

Page 5

DMN3730U Datasheet number: DS35308 Rev. 2 - 2 4 of 7 www.diodes.com July 2011 © Diodes Incorporated DMN3730U A Product Line of Diodes Incorporated 0 1 2 3 4 5 Fig. 4 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V)DS 0 0.5 1.0 1.5 2.0 I , D R A IN C U R R E N T ( A ) D V = 1.5VGS V = 2.0VGS V = 2.5VGS V = 3.0VGS V = 4.5VGS V = 10VGS 0 0.5 1.0 1.5 I , D R A IN C U R R E N T ( A ) D 2.0 0 0.5 1 1.5 2 2.5 3 Fig. 5 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V)GS T = -55°CA T = 25°CA T = 85°CAT = 125°CA T = 150°CA V = 5VDS 0 0.4 0.8 1.2 1.6 2 Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D 0 0.2 0.4 0.6 0.8 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N ) Ω V = 4.5VGS V = 2.5VGS V = 1.8VGS 0 0.25 0.5 0.75 1 1.25 1.5 I , DRAIN CURRENT (A)D Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 0 0.2 0.4 0.6 0.8 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N ) Ω T = -55°CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA V = 4.5VGS Fig. 8 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0.6 0.8 1.0 1.2 1.4 1.6 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( N O R M A L IZ E D ) D S O N V = 4.5V I = 1.0A GS D V = 2.5V I = 500mA GS D Fig. 9 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0 0.2 0.4 0.6 0.8 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S O N Ω V = 4.5V I = 1.0A GS D V = 2.5V I = 500mA GS D

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DMN3730U Datasheet number: DS35308 Rev. 2 - 2 5 of 7 www.diodes.com July 2011 © Diodes Incorporated DMN3730U A Product Line of Diodes Incorporated Fig. 10 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0 0.2 0.4 0.6 0.8 1.0 1.2 V , G A T E T H R E S H O L D V O LT A G E ( V ) G S (T H ) I = 250µAD I = 1mAD 0 0.2 0.4 0.6 0.8 1 1.2 Fig. 11 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V)SD 0 0.4 0.8 1.2 1.6 2.0 I , S O U R C E C U R R E N T ( A ) S T = 25°CA 0 5 10 15 20 25 30 Fig. 12 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS 1 10 100 C , C A P A C IT A N C E ( p F ) Ciss Crss Coss f = 1MHz 1 10 100 1,000 10,000 0 5 10 15 20 25 30 Fig. 13 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS I , LE A K A G E C U R R E N T ( n A ) D S S T = 25°CA T = 85°CA T = 125°CA T = 150°CA 0 2 4 6 8 0 0.5 1 1.5 2 2.5 3 Fig. 14 Gate-Charge Characteristics Q , TOTAL GATE CHARGE (nC) g V , G A T E -S O U R C E V O LT A G E ( V ) G S V = 15V I = 1A DS D

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DMN3730U Datasheet number: DS35308 Rev. 2 - 2 6 of 7 www.diodes.com July 2011 © Diodes Incorporated DMN3730U A Product Line of Diodes Incorporated Package Outline Dimensions Suggested Pad Layout SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 α 0° 8° - All Dimensions in mm Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 A M J L D F B C H K G K1 X E Y CZ

DMN3730U-7 Reviews

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December 20, 2019

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December 10, 2019

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October 5, 2019

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October 1, 2018

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