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DMN3730U-7

hotDMN3730U-7

DMN3730U-7

For Reference Only

Part Number DMN3730U-7
Manufacturer Diodes Incorporated
Description MOSFET N-CH 30V 750MA SOT23
Datasheet DMN3730U-7 Datasheet
Package TO-236-3, SC-59, SOT-23-3
In Stock 4,000 piece(s)
Unit Price $ 0.1423 *
Lead Time Can Ship Immediately
Estimated Delivery Time Aug 11 - Aug 16 (Choose Expedited Shipping)
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Part Number # DMN3730U-7 (Transistors - FETs, MOSFETs - Single) is manufactured by Diodes Incorporated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For DMN3730U-7 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add DMN3730U-7 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of DMN3730U-7.

DMN3730U-7 Specifications

ManufacturerDiodes Incorporated
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet DMN3730U-7Datasheet
PackageTO-236-3, SC-59, SOT-23-3
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds64.3pF @ 25V
Vgs (Max)��8V
FET Feature-
Power Dissipation (Max)450mW (Ta)
Rds On (Max) @ Id, Vgs460 mOhm @ 200mA, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3

DMN3730U-7 Datasheet

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DMN3730U Datasheet number: DS35308 Rev. 2 - 2 1 of 7 www.diodes.com July 2011 © Diodes Incorporated DMN3730U A Product Line of Diodes Incorporated 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V(BR)DSS Max RDS(on) ID Max (Note 5) TA = 25°C 30V 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Load switch • Portable applications • Power Management Functions Features and Benefits • Low VGS(th), can be driven directly from a battery • Low RDS(on) • “Lead Free”, RoHS Compliant (Note 1) • Halogen and Antimony Free. "Green" Device (Note 2) • ESD Protected Gate 2kV • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish-Matte Tin. • Weight: 0.08 grams (approximate) Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DMN3730U-7 N3U 7 8 3,000 Notes: 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year 2011 2012 2013 2014 2015 2016 2017 Code Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D N3U = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) SOT23 Top View Top View Pin-Out Equivalent Circuit D G S ESD PROTECTED TO 2kV Source Gate Drain Body Diode Gate Protection Diode N3U Y M

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DMN3730U Datasheet number: DS35308 Rev. 2 - 2 2 of 7 www.diodes.com July 2011 © Diodes Incorporated DMN3730U A Product Line of Diodes Incorporated Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current Steady State TA = 25°C (Note 5) TA = 85°C (Note 5) TA = 25°C (Note 4) ID 0.94 0.68 0.75 A Pulsed Drain Current (Note 6) IDM 10 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 0.45 W (Note 5) 0.71 W Thermal Resistance, Junction to Ambient (Note 4) RθJA 275 °C/W (Note 5) 177 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. Thermal Characteristics 0.001 0.01 0.1 1 10 100 1000 T1, PULSE DURATION SECTION (sec) Fig. 1 Single Maximum Power Dissipation 0 10 20 30 40 50 60 70 80 90 100 P (p k) , P E A K T R A N S IE N T P O W E R ( W ) Single Pulse Rthja = 176C/W Rthja(t) = Rthja*r(t) T - T = P*Rthja (t)J A 0.01 0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE Fig. 2 SOA, Safe Operation Area DS 100 0.001 0.01 0.1 1 10 I , D R A IN C U R R E N T ( A ) D I (A) @ P = 1s D W I (A) @ P = 1ms D W I (A) @ P = 100µs D W I (A) @ P = 10µs D W I (A) @ DCD I (A) @ P = 100ms D W I (A) @ P = 10ms D W R Limited DS(ON) T , (Max) = 150°C T = 25°C Single Pulse J A

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DMN3730U Datasheet number: DS35308 Rev. 2 - 2 3 of 7 www.diodes.com July 2011 © Diodes Incorporated DMN3730U A Product Line of Diodes Incorporated 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 R (t) = r(t)*R R = 176C/W Duty Cycle, D = t1/t2 θ θ θ JA JA JA t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance 0.001 0.01 0.1 1 R (t ), T R A N S IE N T T H E R M A L R E S IS IT A N C E r(t) @ D=Single Pulse r(t) @ D=0.005 r(t) @ D=0.01 r(t) @ D=0.01 r(t) @ D=0.05 r(t) @ D=0.1 r(t) @ D=0.3 r(t) @ D=0.5 r(t) @ D=0.7 r(t) @ D=0.9 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - 3 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 0.45 - 0.95 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance (Note 7) RDS(on) - - 460 mΩ VGS = 4.5V, ID = 200mA 560 VGS = 2.5V, ID = 100mA 730 VGS = 1.8V, ID = 75mA Forward Transfer Admittance |Yfs| 40 - - mS VDS = 3V, ID = 10mA Diode Forward Voltage (Note 7) VSD - 0.7 1.2 V VGS = 0V, IS = 300mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 64.3 - pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 6.1 - pF Reverse Transfer Capacitance Crss - 4.5 - pF Gate Resistance Rg - 70 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg - 1.6 - nC VGS = 4.5V, VDS = 15V, ID = 1A Gate-Source Charge Qgs - 0.2 - nC Gate-Drain Charge Qgd - 0.2 - nC Turn-On Delay Time tD(on) - 3.5 - ns VDS = 10V, ID = 1A VGS = 10V, RG = 6Ω Turn-On Rise Time tr - 2.8 - ns Turn-Off Delay Time tD(off) - 38 - ns Turn-Off Fall Time tf - 13 - ns Notes: 7. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing.

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DMN3730U Datasheet number: DS35308 Rev. 2 - 2 4 of 7 www.diodes.com July 2011 © Diodes Incorporated DMN3730U A Product Line of Diodes Incorporated 0 1 2 3 4 5 Fig. 4 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V)DS 0 0.5 1.0 1.5 2.0 I , D R A IN C U R R E N T ( A ) D V = 1.5VGS V = 2.0VGS V = 2.5VGS V = 3.0VGS V = 4.5VGS V = 10VGS 0 0.5 1.0 1.5 I , D R A IN C U R R E N T ( A ) D 2.0 0 0.5 1 1.5 2 2.5 3 Fig. 5 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V)GS T = -55°CA T = 25°CA T = 85°CAT = 125°CA T = 150°CA V = 5VDS 0 0.4 0.8 1.2 1.6 2 Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D 0 0.2 0.4 0.6 0.8 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N ) Ω V = 4.5VGS V = 2.5VGS V = 1.8VGS 0 0.25 0.5 0.75 1 1.25 1.5 I , DRAIN CURRENT (A)D Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 0 0.2 0.4 0.6 0.8 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S (O N ) Ω T = -55°CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA V = 4.5VGS Fig. 8 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0.6 0.8 1.0 1.2 1.4 1.6 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( N O R M A L IZ E D ) D S O N V = 4.5V I = 1.0A GS D V = 2.5V I = 500mA GS D Fig. 9 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0 0.2 0.4 0.6 0.8 R , D R A IN -S O U R C E O N -R E S IS TA N C E ( ) D S O N Ω V = 4.5V I = 1.0A GS D V = 2.5V I = 500mA GS D

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DMN3730U Datasheet number: DS35308 Rev. 2 - 2 5 of 7 www.diodes.com July 2011 © Diodes Incorporated DMN3730U A Product Line of Diodes Incorporated Fig. 10 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A 0 0.2 0.4 0.6 0.8 1.0 1.2 V , G A T E T H R E S H O L D V O LT A G E ( V ) G S (T H ) I = 250µAD I = 1mAD 0 0.2 0.4 0.6 0.8 1 1.2 Fig. 11 Diode Forward Voltage vs. Current V , SOURCE-DRAIN VOLTAGE (V)SD 0 0.4 0.8 1.2 1.6 2.0 I , S O U R C E C U R R E N T ( A ) S T = 25°CA 0 5 10 15 20 25 30 Fig. 12 Typical Total Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS 1 10 100 C , C A P A C IT A N C E ( p F ) Ciss Crss Coss f = 1MHz 1 10 100 1,000 10,000 0 5 10 15 20 25 30 Fig. 13 Typical Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS I , LE A K A G E C U R R E N T ( n A ) D S S T = 25°CA T = 85°CA T = 125°CA T = 150°CA 0 2 4 6 8 0 0.5 1 1.5 2 2.5 3 Fig. 14 Gate-Charge Characteristics Q , TOTAL GATE CHARGE (nC) g V , G A T E -S O U R C E V O LT A G E ( V ) G S V = 15V I = 1A DS D

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DMN3730U Datasheet number: DS35308 Rev. 2 - 2 6 of 7 www.diodes.com July 2011 © Diodes Incorporated DMN3730U A Product Line of Diodes Incorporated Package Outline Dimensions Suggested Pad Layout SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 α 0° 8° - All Dimensions in mm Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 A M J L D F B C H K G K1 X E Y CZ

DMN3730U-7 Reviews

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Tre*****Nunez

July 14, 2020

I'm so sure that you're beating your competitor on delivery!

Emmi*****onway

July 5, 2020

All of the components worked, and are still working. So even though the price is amazingly low, the diodes really do work!

Kayd***** Tate

July 3, 2020

Excellent ! DMN3730U-7 item arrived very quickly and was packaged well, no issues.

Cul***** Barr

June 29, 2020

These very economical items will repair my expensive contactors with just a quick connection.

Leon*****zier

June 27, 2020

can supply almost all of my necessary parts in short lead time.

Tris*****Walter

June 23, 2020

Fast, Friendly Service. Item as described. Good Communications. Thank You!

Eva*****est

June 14, 2020

Great capacitors. very fast post very good communication.

Rain*****mpath

June 11, 2020

I was glad to find this product being sold at a great price. They were the perfect replacement.

Lore*****Wise

June 11, 2020

Superb pricing and super fast delivery.

Cade*****Rosas

June 9, 2020

Item sent as described. Showed up quickly. Worked as it said and would recommend again.

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