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FDN360P

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FDN360P

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Part Number FDN360P
Manufacturer Fairchild/ON Semiconductor
Description MOSFET P-CH 30V 2A SSOT3
Datasheet FDN360P Datasheet
Package TO-236-3, SC-59, SOT-23-3
In Stock 204,216 piece(s)
Unit Price $ 0.1347 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 21 - Jan 26 (Choose Expedited Shipping)
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Part Number # FDN360P (Transistors - FETs, MOSFETs - Single) is manufactured by Fairchild/ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For FDN360P specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add FDN360P with quantity into BOM. Heisener.com does NOT require any registration to request a quote of FDN360P.

FDN360P Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FDN360PDatasheet
PackageTO-236-3, SC-59, SOT-23-3
SeriesPowerTrench?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds298pF @ 15V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Rds On (Max) @ Id, Vgs80 mOhm @ 2A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT-3
Package / CaseTO-236-3, SC-59, SOT-23-3

FDN360P Datasheet

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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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May 2003 2003 Fairchild Semiconductor Corporation FDN360P Rev F1 (W) FDN360P Single P-Channel, PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • –2 A, –30 V. RDS(ON) = 80 mΩ @ VGS = –10 V RDS(ON) = 125 mΩ @ VGS = –4.5 V • Low gate charge (6.2 nC typical) • High performance trench technology for extremely low RDS(ON) . • High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. G D S SuperSOT -3 TM D SG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) –2 A – Pulsed –10 Power Dissipation for Single Operation (Note 1a) 0.5 PD (Note 1b) 0.46 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 360 FDN360P 7’’ 8mm 3000 units F D N 360P

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FDN360P Rev F1 (W) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –22 mV/°C VDS = –24V, VGS = 0 V –1 µA IDSS Zero Gate Voltage Drain Current VDS = –24V, VGS = 0 V, TJ=55°C –10 IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.9 –3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 4 mV/°C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –2 A VGS = –10 V, ID = –2 A, TJ=125°C VGS= –4.5 V, ID = –1.5A 63 90 100 80 136 125 mΩ ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –10 A gFS Forward Transconductance VDS = –5 V, ID = –2 A 5 S Dynamic Characteristics Ciss Input Capacitance 298 pF Coss Output Capacitance 83 pF Crss Reverse Transfer Capacitance VDS = –15 V, V GS = 0 V, f = 1.0 MHz 39 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 6 12 ns tr Turn–On Rise Time 13 23 ns td(off) Turn–Off Delay Time 11 20 ns tf Turn–Off Fall Time VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 6 12 ns Qg Total Gate Charge 6.2 9 nC Qgs Gate–Source Charge 1 nC Qgd Gate–Drain Charge VDS = –15V, ID = –3.6 A, VGS = –10 V 1.2 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –0.42 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.42 A (Note 2) –0.8 –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% F D N 360P

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FDN360P Rev F1 (W) Typical Characteristics 0 3 6 9 12 15 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) -I D , D R A IN C U R R E N T ( A ) VGS = -10V -3.5V -3.0V -4.5V -4.0V -5.0V -6.0V V 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 3 6 9 12 15 -ID, DRAIN CURRENT (A) R D S (O N ), N O R M A L IZ E D D R A IN -S O U R C E O N -R E S IS T A N C E VGS = -3.5V -6.0V -5.0V -4.0V -10V -4.5V -7.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) R D S (O N ), N O R M A L IZ E D D R A IN -S O U R C E O N -R E S IS T A N C E ID = -2A VGS = -10V 0.05 0.1 0.15 0.2 0.25 0.3 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) R D S (O N ), O N -R E S IS T A N C E ( O H M ) ID = -1A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 2 4 6 8 10 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) -I D , D R A IN C U R R E N T ( A ) TA = -55 oC 25 oC 125oC VDS = -5.0V 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -I S , R E V E R S E D R A IN C U R R E N T ( A ) VGS = 0V TA = 125 oC 25oC -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. F D N 360P

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FDN360P Rev F1 (W) Typical Characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 7 Qg, GATE CHARGE (nC) -V G S , G A T E -S O U R C E V O L T A G E ( V ) ID = -3.6A VDS = -5V -10V -15V 0 100 200 300 400 0 6 12 18 24 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) C A P A C IT A N C E ( p F ) CISS COSS CRSS f = 1 MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) -I D , D R A IN C U R R E N T ( A ) DC 1s 100ms 100µs RDS(ON) LIMIT VGS = -10V SINGLE PULSE RθJA =270 oC/W TA = 25 oC 10ms 1ms 10µs 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) P (p k ), P E A K T R A N S IE N T P O W E R ( W ) SINGLE PULSE RθJA = 270°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) r( t) , N O R M A L IZ E D E F F E C T IV E T R A N S IE N T T H E R M A L R E S IS T A N C E RθJA(t) = r(t) + RθJA RθJA = 270 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. F D N 360P

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