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March 2013FQB47P06 / FQI47P06
P-Channel QFET MOSFET
-60 V, -47 A, 26 mΩ
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• -47 A, -60 V, RDS(on) = 26 mΩ (Max) @VGS = -10 V,
ID = -23.5 A
• Low Gate Charge (Typ. 84 nC)
• Low Crss (Typ. 320 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature RatingM
O
S
F
E
T
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQB47P06 / FQI47P06 Unit
VDSS Drain-Source Voltage -60 V
ID Drain Current - Continuous (TC = 25°C) -47 A
- Continuous (TC = 100°C) -33.2 A
IDM Drain Current - Pulsed (Note 1) -188 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 820 mJ
IAR Avalanche Current (Note 1) -47 A
EAR Repetitive Avalanche Energy (Note 1) 16 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns
PD Power Dissipation (TA = 25°C) * 3.75 W
Power Dissipation (TC = 25°C) 160 W
- Derate above 25°C 1.06 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter Typ Max Unit
RθJC Thermal Resistance, Junction-to-Case -- 0.94 °C/W
RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
D2-PAK
FQB Series
I2-PAK
FQI Series
G S
D
G SD
S
G
D
www.fairchildsemi.com©2000 Fairchild Semiconductor Corporation
FQB47P06 / FQI47P06 Rev. C0
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Elerical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.43mH, IAS = -47A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -47A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -60 -- -- V
∆BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C -- -0.06 -- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V -- -- -1 µA
VDS = -48 V, TC = 150°C -- -- -10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V
RDS(on) Static Drain-Source
On-Resistance
VGS = -10 V, ID = -23.5 A -- 0.021 0.026 Ω
gFS Forward Transconductance VDS = -30 V, ID = -23.5 A -- 21 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 2800 3600 pF
Coss Output Capacitance -- 1300 1700 pF
Crss Reverse Transfer Capacitance -- 320 420 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = -30 V, ID = -23.5 A,
RG = 25 Ω
-- 50 110 ns
tr Turn-On Rise Time -- 450 910 ns
td(off) Turn-Off Delay Time -- 100 210 ns
tf Turn-Off Fall Time -- 195 400 ns
Qg Total Gate Charge VDS = -48 V, ID = -47 A,
VGS = -10 V
-- 84 110 nC
Qgs Gate-Source Charge -- 18 -- nC
Qgd Gate-Drain Charge -- 44 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- -47 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -188 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -47 A -- -- -4.0 V
trr Reverse Recovery Time VGS = 0 V, IS = -47 A,
dIF / dt = 100 A/µs
-- 130 -- ns
Qrr Reverse Recovery Charge -- 0.55 -- µC
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
www.fairchildsemi.com©2000 Fairchild Semiconductor Corporation
FQB47P06 / FQI47P06 Rev. C0
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0 10 20 30 40 50 60 70 80 90
0
2
4
6
8
10
12
V
DS
= -30V
V
DS
= -48V
* Note : I
D
= -47 A-
V
G
S
,
G
at
e-
S
ou
rc
e
V
ol
ta
ge
[
V
]
Q
G
, Total Gate Charge [nC]
10-1 100 101
0
1000
2000
3000
4000
5000
6000
7000
8000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
ap
ac
ita
nc
e
[p
F
]
V
DS
, Drain-Source Voltage [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
10-1
100
101
102
175oC * Notes :
1. V
GS
= 0V
2. 250µs Pulse Test
25oC
-I
D
R
,
R
ev
er
se
D
ra
in
C
ur
re
nt
[A
]
-V
SD
, Source-Drain Voltage [V]
0 100 200 300 400
0.00
0.02
0.04
0.06
0.08
0.10
* Note : T
J
= 25oC
V
GS
= - 20V
V
GS
= - 10V
R
D
S
(o
n
)
[Ω
],
D
ra
in
-S
ou
rc
e
O
n-
R
es
is
ta
nc
e
-I
D
, Drain Current [A]
2 4 6 8 10
10-1
100
101
102
175oC
25oC
-55oC
* Notes :
1. V
DS
= -30V
2. 250µs Pulse Test
-I
D
,
D
ra
in
C
ur
re
nt
[A
]
-V
GS
, Gate-Source Voltage [V]
10-1 100 101
100
101
102
V
GS
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
* Notes :
1. 250µs Pulse Test
2. T
C
= 25
o
C
-I
D
,
D
ra
in
C
ur
re
nt
[
A
]
-V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristicswww.fairchildsemi.com©2000 Fairchild Semiconductor Corporation
FQB47P06 / FQI47P06 Rev. C0
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1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
1 0 -2
1 0 -1
1 0 0
* N o te s :
1 . Z
θ J C
( t) = 0 .9 4 o C /W M a x .
2 . D u ty F a c to r , D = t
1
/ t
2
3 . T
J M
- T
C
= P
D M
* Z
θ J C
( t )
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
θJ
C
(t
),
T
he
rm
al
R
es
po
ns
e
t
1
, S q u a re W a v e P u ls e D u ra t io n [s e c ]
25 50 75 100 125 150 175
0
10
20
30
40
50
-I
D
,
D
ra
in
C
u
rr
en
t
[A
]
T
C
, Case Temperature [oC]
10
0
10
1
10
2
10
-1
100
101
10
2
103
DC
10 ms
1 ms
100 µs
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25 oC
2. T
J
= 175 oC
3. Single Pulse
-I
D
,
D
ra
in
C
ur
re
nt
[
A
]
-V
DS
, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
* Notes :
1. V
GS
= -10 V
2. I
D
= -23.5 A
R
D
S
(O
N
),
(N
o
rm
al
iz
e
d)
D
ra
in
-S
ou
rc
e
O
n-
R
es
is
ta
nc
e
T
J
, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= -250µA
-B
V
D
S
S
,
(N
or
m
al
iz
ed
)
D
ra
in
-S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
T
J
, Junction Temperature [oC]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t1
PDM
t2www.fairchildsemi.com©2000 Fairchild Semiconductor Corporation
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Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com©2000 Fairchild Semiconductor Corporation
FQB47P06 / FQI47P06 Rev. C0
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Peak Diode Recovery dv/dt Test Circuit & Waveforms
D U T
V D S
+
_
D r i v e r
R G
C o m p l i m e n t o f D U T
( N - C h a n n e l )
V G S • d v / d t c o n t r o l l e d b y R G
• I S D c o n t r o l l e d b y p u l s e p e r i o d
V D D
L
I S D
1 0 V
V G S
( D r i v e r )
I S D
( D U T )
V D S
( D U T )
V D D
B o d y D i o d e
F o r w a r d V o l t a g e D r o p
V S D
I F M , B o d y D i o d e F o r w a r d C u r r e n t
B o d y D i o d e R e v e r s e C u r r e n t
I R M
B o d y D i o d e R e c o v e r y d v / d t
d i / d t
D =
G a t e P u l s e W i d t h
G a t e P u l s e P e r i o d
- - - - - - - - - - - - - - - - - - - - - - - - - -
www.fairchildsemi.com©2000 Fairchild Semiconductor Corporation
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Dimensions in Millimeters
Mechanical Dimensions
D2 - PAK
www.fairchildsemi.com©2000 Fairchild Semiconductor Corporation
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Mechanical Dimensions
Dimensions in Millimeters
I2 - PAK
www.fairchildsemi.com©2000 Fairchild Semiconductor Corporation
FQB47P06 / FQI47P06 Rev. C0
