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FQI47P06TU

hot FQI47P06TU

FQI47P06TU

For Reference Only

Part Number FQI47P06TU
Manufacturer Fairchild/ON Semiconductor
Description MOSFET P-CH 60V 47A I2PAK
Datasheet FQI47P06TU Datasheet
Package TO-262-3 Long Leads, I2Pak, TO-262AA
In Stock 20290 piece(s)
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Lead Time Can Ship Immediately
Estimated Delivery Time Dec 10 - Dec 15 (Choose Expedited Shipping)
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FQI47P06TU

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FQI47P06TU Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet FQI47P06TU Datasheet
PackageTO-262-3 Long Leads, I2Pak, TO-262AA
SeriesQFET?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25��C47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 25V
Vgs (Max)��25V
Power Dissipation (Max)3.75W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs26 mOhm @ 23.5A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA

FQI47P06TU Datasheet

Page 1

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F Q B 47P 06 / F Q I47P 06 60V P -C h an n el March 2013FQB47P06 / FQI47P06 P-Channel QFET MOSFET -60 V, -47 A, 26 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -47 A, -60 V, RDS(on) = 26 mΩ (Max) @VGS = -10 V, ID = -23.5 A • Low Gate Charge (Typ. 84 nC) • Low Crss (Typ. 320 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature RatingM O S F E T Absolute Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQB47P06 / FQI47P06 Unit VDSS Drain-Source Voltage -60 V ID Drain Current - Continuous (TC = 25°C) -47 A - Continuous (TC = 100°C) -33.2 A IDM Drain Current - Pulsed (Note 1) -188 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 820 mJ IAR Avalanche Current (Note 1) -47 A EAR Repetitive Avalanche Energy (Note 1) 16 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns PD Power Dissipation (TA = 25°C) * 3.75 W Power Dissipation (TC = 25°C) 160 W - Derate above 25°C 1.06 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Unit RθJC Thermal Resistance, Junction-to-Case -- 0.94 °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) D2-PAK FQB Series I2-PAK FQI Series G S D G SD S G D www.fairchildsemi.com©2000 Fairchild Semiconductor Corporation FQB47P06 / FQI47P06 Rev. C0

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F Q B 47P 06 / F Q I47P 06 60V P -C h an n el M O S F E T Elerical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.43mH, IAS = -47A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -47A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -60 -- -- V ∆BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.06 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -60 V, VGS = 0 V -- -- -1 µA VDS = -48 V, TC = 150°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -23.5 A -- 0.021 0.026 Ω gFS Forward Transconductance VDS = -30 V, ID = -23.5 A -- 21 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 2800 3600 pF Coss Output Capacitance -- 1300 1700 pF Crss Reverse Transfer Capacitance -- 320 420 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -30 V, ID = -23.5 A, RG = 25 Ω -- 50 110 ns tr Turn-On Rise Time -- 450 910 ns td(off) Turn-Off Delay Time -- 100 210 ns tf Turn-Off Fall Time -- 195 400 ns Qg Total Gate Charge VDS = -48 V, ID = -47 A, VGS = -10 V -- 84 110 nC Qgs Gate-Source Charge -- 18 -- nC Qgd Gate-Drain Charge -- 44 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -47 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -188 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -47 A -- -- -4.0 V trr Reverse Recovery Time VGS = 0 V, IS = -47 A, dIF / dt = 100 A/µs -- 130 -- ns Qrr Reverse Recovery Charge -- 0.55 -- µC (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) www.fairchildsemi.com©2000 Fairchild Semiconductor Corporation FQB47P06 / FQI47P06 Rev. C0

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F Q B 47P 06 / F Q I47P 06 60V P -C h an n el M O S F E T 0 10 20 30 40 50 60 70 80 90 0 2 4 6 8 10 12 V DS = -30V V DS = -48V * Note : I D = -47 A- V G S , G at e- S ou rc e V ol ta ge [ V ] Q G , Total Gate Charge [nC] 10-1 100 101 0 1000 2000 3000 4000 5000 6000 7000 8000 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd * Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss C ap ac ita nc e [p F ] V DS , Drain-Source Voltage [V] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 10-1 100 101 102 175oC * Notes : 1. V GS = 0V 2. 250µs Pulse Test 25oC -I D R , R ev er se D ra in C ur re nt [A ] -V SD , Source-Drain Voltage [V] 0 100 200 300 400 0.00 0.02 0.04 0.06 0.08 0.10 * Note : T J = 25oC V GS = - 20V V GS = - 10V R D S (o n ) [Ω ], D ra in -S ou rc e O n- R es is ta nc e -I D , Drain Current [A] 2 4 6 8 10 10-1 100 101 102 175oC 25oC -55oC * Notes : 1. V DS = -30V 2. 250µs Pulse Test -I D , D ra in C ur re nt [A ] -V GS , Gate-Source Voltage [V] 10-1 100 101 100 101 102 V GS Top : - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V * Notes : 1. 250µs Pulse Test 2. T C = 25 o C -I D , D ra in C ur re nt [ A ] -V DS , Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristicswww.fairchildsemi.com©2000 Fairchild Semiconductor Corporation FQB47P06 / FQI47P06 Rev. C0

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F Q B 47P 06 / F Q I47P 06 60V P -C h an n el M O S F E T 1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1 1 0 -2 1 0 -1 1 0 0 * N o te s : 1 . Z θ J C ( t) = 0 .9 4 o C /W M a x . 2 . D u ty F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C ( t ) s in g le p u ls e D = 0 .5 0 .0 2 0 .2 0 .0 5 0 .1 0 .0 1 Z θJ C (t ), T he rm al R es po ns e t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ] 25 50 75 100 125 150 175 0 10 20 30 40 50 -I D , D ra in C u rr en t [A ] T C , Case Temperature [oC] 10 0 10 1 10 2 10 -1 100 101 10 2 103 DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) * Notes : 1. T C = 25 oC 2. T J = 175 oC 3. Single Pulse -I D , D ra in C ur re nt [ A ] -V DS , Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 * Notes : 1. V GS = -10 V 2. I D = -23.5 A R D S (O N ), (N o rm al iz e d) D ra in -S ou rc e O n- R es is ta nc e T J , Junction Temperature [oC] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * Notes : 1. V GS = 0 V 2. I D = -250µA -B V D S S , (N or m al iz ed ) D ra in -S ou rc e B re ak do w n V ol ta ge T J , Junction Temperature [oC] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 11. Transient Thermal Response Curve t1 PDM t2www.fairchildsemi.com©2000 Fairchild Semiconductor Corporation FQB47P06 / FQI47P06 Rev. C0

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F Q B 47P 06 / F Q I47P 06 60V P -C h an n el M O S F E T Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.fairchildsemi.com©2000 Fairchild Semiconductor Corporation FQB47P06 / FQI47P06 Rev. C0

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F Q B 47P 06 / F Q I47P 06 60V P -C h an n el M O S F E T Peak Diode Recovery dv/dt Test Circuit & Waveforms D U T V D S + _ D r i v e r R G C o m p l i m e n t o f D U T ( N - C h a n n e l ) V G S • d v / d t c o n t r o l l e d b y R G • I S D c o n t r o l l e d b y p u l s e p e r i o d V D D L I S D 1 0 V V G S ( D r i v e r ) I S D ( D U T ) V D S ( D U T ) V D D B o d y D i o d e F o r w a r d V o l t a g e D r o p V S D I F M , B o d y D i o d e F o r w a r d C u r r e n t B o d y D i o d e R e v e r s e C u r r e n t I R M B o d y D i o d e R e c o v e r y d v / d t d i / d t D = G a t e P u l s e W i d t h G a t e P u l s e P e r i o d - - - - - - - - - - - - - - - - - - - - - - - - - - www.fairchildsemi.com©2000 Fairchild Semiconductor Corporation FQB47P06 / FQI47P06 Rev. C0

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F Q B 47P 06 / F Q I47P 06 60V P -C h an n el M O S F E T Dimensions in Millimeters Mechanical Dimensions D2 - PAK www.fairchildsemi.com©2000 Fairchild Semiconductor Corporation FQB47P06 / FQI47P06 Rev. C0

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F Q B 47P 06 / F Q I47P 06 60V P -C h an n el M O S F E T Mechanical Dimensions Dimensions in Millimeters I2 - PAK www.fairchildsemi.com©2000 Fairchild Semiconductor Corporation FQB47P06 / FQI47P06 Rev. C0

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