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IRF3704PBF

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IRF3704PBF

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Part Number IRF3704PBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 20V 77A TO-220AB
Datasheet IRF3704PBF Datasheet
Package TO-220-3
In Stock 22,684 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Sep 27 - Oct 2 (Choose Expedited Shipping)
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Part Number # IRF3704PBF (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRF3704PBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF3704PBFDatasheet
PackageTO-220-3
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C77A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1996pF @ 10V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)87W (Tc)
Rds On (Max) @ Id, Vgs9 mOhm @ 15A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

IRF3704PBF Datasheet

Page 1

Page 2

www.irf.com 1  IRF3704PbF IRF3704SPbFSMPS MOSFET HEXFETPower MOSFET Benefits  Ultra-Low Gate Impedance  Very Low RDS(on)  Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max ID 20V 9.0mΩ 77A Notesthrough  are on page 10 Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 20 V VGS Gate-to-Source Voltage ± 20 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 77  ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 64 A IDM Pulsed Drain Current 308 PD @TC = 25°C Maximum Power Dissipation 87 W PD @TC = 70°C Maximum Power Dissipation 61 W Linear Derating Factor 0.59 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C  When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 D2Pak IRF3704S TO-220AB IRF3704 TO-262 IRF3704L Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.73 RθCS Case-to-Sink, Flat, Greased Surface  0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient(PCB mount) ––– 40 IRF3704LPbF  High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use Applications  High Frequency Buck Converters for Computer Processor Power  Lead-Free 

Page 3

IRF3704/S/LPbF 2 www.irf.com Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 216 mJ IAR Avalanche Current ––– 71 A Avalanche Characteristics S D G Diode Characteristics 77 308  Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 42 ––– ––– S VDS = 10V, ID = 57A Qg Total Gate Charge ––– 19 ––– ID = 28.4A Qgs Gate-to-Source Charge ––– 8.1 ––– nC VDS = 10V Qgd Gate-to-Drain ("Miller") Charge ––– 6.4 ––– VGS = 4.5V  Qoss Output Gate Charge ––– 16 24 VGS = 0V, VDS = 10V td(on) Turn-On Delay Time ––– 8.4 ––– VDD = 10V tr Rise Time ––– 98 ––– ID = 28.4A td(off) Turn-Off Delay Time ––– 12 ––– RG = 1.8Ω tf Fall Time ––– 5.0 ––– VGS = 4.5V Ciss Input Capacitance ––– 1996 ––– VGS = 0V Coss Output Capacitance ––– 1085 ––– VDS = 10V Crss Reverse Transfer Capacitance ––– 155 ––– pF ƒ = 1.0MHz VSD Diode Forward Voltage Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)  ––– ––– p-n junction diode. ––– 0.88 1.3 V TJ = 25°C, IS = 35.5A, VGS = 0V ––– 0.82 ––– TJ = 125°C, IS = 35.5A, VGS = 0V  trr Reverse Recovery Time ––– 38 57 ns TJ = 25°C, IF = 35.5A, VR=20V Qrr Reverse Recovery Charge ––– 45 68 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 41 62 ns TJ = 125°C, IF = 35.5A, VR=20V Qrr Reverse Recovery Charge ––– 50 75 nC di/dt = 100A/µs Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA ––– 6.3 9.0 VGS = 10V, ID = 15A ––– 9.8 13.5 VGS = 4.5V, ID = 12A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 16V, VGS = 0V ––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance mΩ

Page 4

IRF3704/S/LPbF www.irf.com 3 Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 10 100 1000 3.0 4.0 5.0 6.0 7.0 8.0 V = 15V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , D ra in -t o- S ou rc e C ur re nt ( A ) GS D T = 25 CJ ° T = 175 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 T , Junction Temperature ( C) R , D ra in -t o- S ou rc e O n R es is ta nc e (N or m al iz ed ) J D S (o n) ° V = I = GS D 10V 77A 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) 3.5V 20µs PULSE WIDTH Tj = 25°C VGS TOP 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) 3.5V 20µs PULSE WIDTH Tj = 175°C VGS TOP 10.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V

Page 5

IRF3704/S/LPbF 4 www.irf.com Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1 10 100 0 500 1000 1500 2000 2500 3000 V , Drain-to-Source Voltage (V) C , C ap ac ita nc e (p F ) DS V C C C = = = = 0V, C C C f = 1MHz + C + C C SHORTED GS iss gs gd , ds rss gd oss ds gd Ciss Coss Crss 0 10 20 30 40 0 2 4 6 8 10 Q , Total Gate Charge (nC) V , G at e- to -S ou rc e V ol ta ge ( V ) G G S I =D 28.4A V = 10VDS 0.1 1 10 100 1000 0.2 0.5 0.8 1.1 1.4 1.7 2.0 V ,Source-to-Drain Voltage (V) I , R ev er se D ra in C ur re nt ( A ) SD S D V = 0 V GS T = 25 CJ ° T = 175 CJ ° 1 10 100 1000 0.1 1 10 100 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 175 C = 25 C° °J C V , Drain-to-Source Voltage (V) I , D ra in C ur re nt ( A ) I , D ra in C ur re nt ( A ) DS D 10us 100us 1ms 10ms

Page 6

IRF3704/S/LPbF www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms   ≤ 1    ≤ 0.1 %      + -  25 50 75 100 125 150 175 0 15 30 45 60 75 90 T , Case Temperature ( C) I , D ra in C ur re nt ( A ) °C D LIMITED BY PACKAGE 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 Notes: 1. Duty factor D = t / t 2. Peak T =P x Z + T 1 2 J DM thJC C P t t DM 1 2 t , Rectangular Pulse Duration (sec) T he rm al R es po ns e (Z ) 1 th JC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)

Page 7

IRF3704/S/LPbF 6 www.irf.com Fig 13. On-Resistance Vs. Gate VoltageFig 12. On-Resistance Vs. Drain Current Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + -  QG QGS QGD VG Charge tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20V 0 50 100 150 200 250 300 ID , Drain Current ( A ) 0.005 0.010 0.015 0.020 R D S ( o n ) , D ra in -t o- S ou rc e O n R es is ta nc e ( Ω ) VGS = 4.5V VGS = 10V 25 50 75 100 125 150 175 0 100 200 300 400 500 600 Starting T , Junction Temperature ( C) E , S in gl e P ul se A va la nc he E ne rg y (m J) J A S ° ID TOP BOTTOM 11.6A 23.8A 28.4A Fig 14a&b. Basic Gate Charge Test circuit and Waveforms 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) 0.006 0.007 0.008 0.009 0.010 R D S (o n) , D ra in -t o -S ou rc e O n R es is ta nc e (Ω ) ID = 35.5A

Page 8

IRF3704/S/LPbF www.irf.com 7   Dimensions are shown in millimeters (inches)       E XAMPLE : IN T HE AS S E MB LY L INE "C" T HIS IS AN IRF 1010 LOT CODE 1789 AS S E MB LE D ON WW 19, 1997 PART NUMB ER AS S E MB LY LOT CODE DAT E CODE YE AR 7 = 1997 L INE C WE E K 19 LOGO R E CT IF IER INT E RNAT IONAL Note: "P" in assembly line position indicates "Lead-Free" LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN - B - 1.32 (.052) 1.22 (.048) 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3X 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) MIN 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - A - 10.54 (.415) 10.29 (.405)2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 2X 0.36 (.014) M B A M 4 1 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. HEXFET 1- GATE 2- DRAIN 3- SOURCE 4- DRAIN LEAD ASSIGNMENTS IGBTs, CoPACK 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR

Page 9

IRF3704/S/LPbF 8 www.irf.com N ote: "P " in as s embly line pos i tion indicates "L ead-F ree" F 53 0 S T H IS IS AN IR F 5 30 S W IT H L OT COD E 8 02 4 AS S E M B L E D O N W W 0 2, 2 00 0 IN T H E AS S E M B L Y L IN E "L " AS S E M B L Y L OT COD E IN T E R N AT ION AL R E CT IF IE R L OGO P AR T N U M B E R D AT E CO D E Y E AR 0 = 2 00 0 W E E K 02 L IN E L  F 5 3 0 S A = AS S E M B L Y S IT E CO D E W E E K 0 2 P = D E S IG N AT E S L E AD -F R E E P R O D U CT (O P T ION AL ) R E CT IF IE R IN T E R N AT ION AL L OGO L OT COD E AS S E M B L Y Y E AR 0 = 2 0 0 0 D AT E CO D E P AR T N U M B E R            Dimensions are shown in millimeters (inches)

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IRF3704/S/LPbF www.irf.com 9 ASSEMBLY LOT CODE RECTIFIER INTERNATIONAL ASSEMBLED ON WW 19, 1997 Note: "P" in assembly line position indicates "Lead-Free" IN THE ASSEMBLY LINE "C" LOGO THIS IS AN IRL3103L LOT CODE 1789 EXAMPLE: LINE C DATE CODE WEEK 19 YEAR 7 = 1997 PART NUMBER PART NUMBER LOGO LOT CODE ASSEMBLY INTERNATIONAL RECTIFIER PRODUCT (OPTIONAL) P = DES IGNATES LEAD-FREE A = ASSEMBLY S ITE CODE WEEK 19 YEAR 7 = 1997 DATE CODE OR TO-262 Part Marking Information TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER

IRF3704PBF Reviews

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Henri*****nandez

August 19, 2020

Received the parts, and all parts are in tight packaging without any problems, professional seller.

Mila*****ichard

August 14, 2020

I can count on your provision for BOM of my design in near future

Cas*****oshy

August 13, 2020

The fastest shipping I've seen yet

Eas***** Dean

August 2, 2020

The capacitors were exactly the ones I wanted. Perfect fit.

Shep***** Kaul

August 2, 2020

Very friendly online shopping site - easy to navigate and it keeps vital datasheet for each product online purchase.

Jere***** Arias

July 27, 2020

They work great and I hope to find more used for the extra ones.

Jua*****orse

July 22, 2020

It fit exactly in the same location as the original. Works great and no problem. Good purchase.

Ty*****alla

July 8, 2020

I love this website, and get a quick response. Good experience! Good customer service.

Ephrai*****ataraman

July 5, 2020

Fast shipping, work as designed. Made some circuitry with these components and they work well.

Lill*****niels

July 5, 2020

The are the right size and type and do what they are designed to do.

IRF3704PBF Guarantees

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Our experienced sales team and tech support team back our services to satisfy all our customers.

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We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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