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IRF6636TR1PBF

IRF6636TR1PBF

IRF6636TR1PBF

For Reference Only

Part Number IRF6636TR1PBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 20V 18A DIRECTFET
Datasheet IRF6636TR1PBF Datasheet
Package DirectFET? Isometric ST
In Stock 458 piece(s)
Unit Price Request a Quote
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IRF6636TR1PBF

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IRF6636TR1PBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF6636TR1PBF Datasheet
PackageDirectFET? Isometric ST
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25��C18A (Ta), 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds2420pF @ 10V
Vgs (Max)��20V
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs4.5 mOhm @ 18A, 10V
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET? ST
Package / CaseDirectFET? Isometric ST

IRF6636TR1PBF Datasheet

Page 1

Page 2

www.irf.com 1 05/29/06 IRF6636PbF IRF6636TRPbF DirectFETPower MOSFET  Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage           Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  DirectFET ISOMETRIC SQ SX ST MQ MX MT 0 10 20 30 QG Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 V G S , G at e- to -S ou rc e V ol ta ge ( V ) VDS= 16V VDS= 10V ID= 14A VDSS VGS RDS(on) RDS(on) 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 18nC 6.1nC 1.9nC 7.3nC 10nC 1.8V 0 1 2 3 4 5 6 7 8 9 10 VGS, Gate -to -Source Voltage (V) 0 5 10 15 20 T yp ic al R D S (o n) ( m Ω ) ID = 18A TJ = 25°C TJ = 125°C   RoHs Compliant   Lead-Free (Qualified up to 260°C Reflow)  Application Specific MOSFETs  Ideal for CPU Core DC-DC Converters  Low Conduction Losses  High Cdv/dt Immunity  Low Profile (<0.7mm)  Dual Sided Cooling Compatible   Compatible with existing Surface Mount Techniques   Click on this section to link to the appropriate technical paper.  Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.  TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature.  Starting TJ = 25°C, L = 0.27mH, RG = 25Ω, IAS = 14A. Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  IDM Pulsed Drain Current  EAS Single Pulse Avalanche Energy  mJ IAR Avalanche Current A14 Max. 15 81 140 ±20 20 18 28 Description The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack- age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6636PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6636PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Page 3

 2 www.irf.com  Repetitive rating; pulse width limited by max. junction temperature.  Pulse width ≤ 400µs; duty cycle ≤ 2%. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 15 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.2 4.5 mΩ ––– 4.6 6.4 VGS(th) Gate Threshold Voltage 1.55 ––– 2.45 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -6.4 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 52 ––– ––– S Qg Total Gate Charge ––– 18 27 Qgs1 Pre-Vth Gate-to-Source Charge ––– 5.9 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.9 ––– nC Qgd Gate-to-Drain Charge ––– 6.1 Qgodr Gate Charge Overdrive ––– 4.1 ––– See Fig. 15 Qsw Switch Charge (Qgs2 + Qgd) ––– 8.0 ––– Qoss Output Charge ––– 10 ––– nC RG Gate Resistance ––– ––– 1.5 Ω td(on) Turn-On Delay Time ––– 14 ––– tr Rise Time ––– 19 ––– td(off) Turn-Off Delay Time ––– 16 ––– ns tf Fall Time ––– 6.2 ––– Ciss Input Capacitance ––– 2420 ––– Coss Output Capacitance ––– 780 ––– pF Crss Reverse Transfer Capacitance ––– 360 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 52 (Body Diode) A ISM Pulsed Source Current ––– ––– 140 (Body Diode) VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 16 24 ns Qrr Reverse Recovery Charge ––– 7.3 11 nC VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 4.5V ID = 14A VGS = 0V VDS = 10V ID = 14A TJ = 25°C, IF = 14A di/dt = 100A/µs See Fig. 18 TJ = 25°C, IS = 14A, VGS = 0V showing the integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 18A VGS = 4.5V, ID = 14A VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V MOSFET symbol Clamped Inductive Load VDS = 10V, ID = 14A Conditions See Fig. 16 & 17 ƒ = 1.0MHz VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5V VDS = 10V

Page 4

 www.irf.com 3 Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 1 10 100 T he rm al R es po ns e ( Z th JA ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc Ri (°C/W) τi (sec) 0.6677 0.000066 1.0463 0.000896 1.5612 0.004386 29.2822 0.686180 25.4550 32 τJ τJ τ1 τ1 τ2 τ2 τ3 τ3 R1 R1 R2 R2 R3 R3 Ci i/Ri Ci= τi/Ri τ4 τ4 R4 R4 τA τA τ5 τ5 R5 R5 Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink.  Rθ is measured at     Surface mounted on 1 in. square Cu (still air).   with small clip heatsink (still air)  Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) Absolute Maximum Ratings Parameter Units PD @TA = 25°C Power Dissipation W PD @TA = 70°C Power Dissipation PD @TC = 25°C Power Dissipation  TP Peak Soldering Temperature °C TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient  ––– 58 RθJA Junction-to-Ambient  12.5 ––– RθJA Junction-to-Ambient  20 ––– °C/W RθJC Junction-to-Case  ––– 3.0 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– Linear Derating Factor  W/°C0.017 270 -40 to + 150 Max. 42 2.2 1.4

Page 5

 4 www.irf.com Fig 5. Typical Output CharacteristicsFig 4. Typical Output Characteristics Fig 6. Typical Transfer Characteristics Fig 7. Normalized On-Resistance vs. Temperature Fig 8. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V BOTTOM 2.5V ≤60µs PULSE WIDTH Tj = 25°C 2.5V 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) 2.5V ≤60µs PULSE WIDTH Tj = 150°C VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V BOTTOM 2.5V -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 0.5 1.0 1.5 T yp ic al R D S (o n) ( N or m al iz ed ) ID = 18A VGS = 10V VGS = 4.5V 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 C , C ap ac ita nc e( pF ) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0 20 40 60 80 100 120 140 ID, Drain Current (A) 0 10 20 30 40 50 T yp ic al R D S (o n) ( m Ω ) TJ = 25°C Vgs = 3.0V Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V 1 2 3 4 VGS, Gate-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt (Α ) TJ = 150°C TJ = 25°C TJ = -40°C VDS = 10V ≤60µs PULSE WIDTH

Page 6

 www.irf.com 5 Fig 13. Threshold Voltage vs. TemperatureFig 12. Maximum Drain Current vs. Case Temperature Fig 10. Typical Source-Drain Diode Forward Voltage Fig11. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy vs. Drain Current -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 V G S (t h) G at e th re sh ol d V ol ta ge ( V ) ID = 50µA 25 50 75 100 125 150 TC , Case Temperature (°C) 0 10 20 30 40 50 60 70 80 90 I D , D ra in C ur re nt ( A ) 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) OPERATION IN THIS AREA LIMITED BY RDS(on) TA = 25°C TJ = 150°C Single Pulse 100µsec 1msec 10msec 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V) 0 1 10 100 1000 I S D , R ev er se D ra in C ur re nt ( A ) TJ = 150°C TJ = 25°C TJ = -40°C VGS = 0V 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) 0 20 40 60 80 100 120 E A S , S in gl e P ul se A va la nc he E ne rg y (m J) ID TOP 6.4A 9.8A BOTTOM 14A

Page 7

 6 www.irf.com D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + - Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16b. Unclamped Inductive Waveforms tp V(BR)DSS IAS Fig 16a. Unclamped Inductive Test Circuit Fig 17b. Switching Time Waveforms VGS VDS 90% 10% td(on) td(off)tr tf Fig 17a. Switching Time Test Circuit VGS Pulse Width < 1µs Duty Factor < 0.1% VDD VDS LD D.U.T + - RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20V 

Page 8

 www.irf.com 7 DirectFET Substrate and PCB Layout, ST Outline  (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. Fig 18.      for N-Channel HEXFETPower MOSFETs P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period                    •       •    •           •       •     !  "#"" •        $ %% • "#"" &   #  + - + + +- - -         G = GATE D = DRAIN S = SOURCE D D D D G S S

Page 9

 8 www.irf.com DirectFET Outline Dimension, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET Part Marking CODE A B C D E F G H J K L M R P IMPERIAL MIN 4.75 3.70 2.75 0.35 0.58 0.58 0.75 0.53 0.26 0.88 2.18 0.616 0.020 0.08 MAX 4.85 3.95 2.85 0.45 0.62 0.62 0.79 0.57 0.30 0.98 2.28 0.676 0.080 0.17 MIN 0.187 0.146 0.108 0.014 0.023 0.023 0.030 0.021 0.010 0.035 0.086 0.0235 0.0008 0.003 METRIC DIMENSIONS MAX 0.191 0.156 0.112 0.018 0.024 0.024 0.031 0.022 0.012 0.039 0.090 0.0274 0.0031 0.007

Page 10

 www.irf.com 9 DirectFET Tape & Reel Dimension (Showing component orientation). Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/06 STANDARD OPTION (QTY 4800) MIN 330.0 20.2 12.8 1.5 100.0 N.C 12.4 11.9 CODE A B C D E F G H MAX N.C N.C 13.2 N.C N.C 18.4 14.4 15.4 MIN 12.992 0.795 0.504 0.059 3.937 N.C 0.488 0.469 MAX N.C N.C 0.520 N.C N.C 0.724 0.567 0.606 METRIC IMPERIAL TR1 OPTION (QTY 1000) IMPERIAL MIN 6.9 0.75 0.53 0.059 2.31 N.C 0.47 0.47 MAX N.C N.C 12.8 N.C N.C 13.50 12.01 12.01 MIN 177.77 19.06 13.5 1.5 58.72 N.C 11.9 11.9 METRIC MAX N.C N.C 0.50 N.C N.C 0.53 N.C N.C REEL DIMENSIONS NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6636TRPBF). For 1000 parts on 7" reel, order IRF6636TR1PBF CODE A B C D E F G H MAX 0.319 0.161 0.484 0.219 0.165 0.205 N.C 0.063 MIN 0.311 0.154 0.469 0.215 0.158 0.197 0.059 0.059 MAX 8.10 4.10 12.30 5.55 4.20 5.20 N.C 1.60 DIMENSIONS METRIC IMPERIAL Loaded Tape Feed Direction MIN 7.90 3.90 11.90 5.45 4.00 5.00 1.50 1.50

IRF6636TR1PBF Reviews

Average User Rating
5 / 5 (102)
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Angela*****padhyay

January 25, 2020

I tested some and all look good.

Hayl*****ittle

January 19, 2020

Very much appreciate the thoughtful system to hold multiple orders, including back ordered items, can be shipped at once rather than incremental shipments.

Sut***** Tara

January 8, 2020

Items arrived well pakaged, reasonable postage and as described. Top seller

Gianl*****armon

January 8, 2020

Purchased this in May and didn't use it until last week. worked and all was good.

Cod*****aik

December 18, 2019

Your prices are low and your website is customer-use friendly.

Gabri*****Gross

October 27, 2019

I enjoy Good service from Heisener team , I can get good quality components what I want in heisener.com.

Way***** Seth

September 7, 2019

These are the most popular variety of components of different types!

Myr*****hosla

August 25, 2019

Better than ever - more stock, better prices, quicker shipments, many choices of payment.

Lexi*****irre

August 5, 2019

To be honest, you're beating your competitor on delivery - sometimes I request 2nd day and you still get it here overnight. Thanks!

Alee*****arkar

July 29, 2019

Itams as described Fast and cheap shipping.

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