IRF7493TRPBF

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www.irf.com 1

 SO-8 Top View 81 2 3 4 5 6 7 D D D DG S A S S A IRF7493PbF HEXFET

Power MOSFET Notes
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High frequency DC-DC converters
Lead-Free Benefits Applications
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max Qg (typ.) 80V 15m@VGS=10V 35nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 70°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation
W PD @TC = 70°C Maximum Power Dissipation
Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Lead ––– 20 RθJA Junction-to-Ambient
––– 50 Max. 9.3 7.4 74 ± 20 80 -55 to + 150 2.5 0.02 1.6

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IRF7493PbF 2 www.irf.com Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 80 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.074 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 11.5 15 mΩ VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic @ TJ = 25°C (unless otherwise specified) gfs Forward Transconductance 13 ––– ––– S Qg Total Gate Charge ––– 35 53 Qgs Gate-to-Source Charge ––– 5.7 ––– Qgd Gate-to-Drain Charge ––– 12 ––– td(on) Turn-On Delay Time ––– 8.3 ––– tr Rise Time ––– 7.5 ––– td(off) Turn-Off Delay Time ––– 30 ––– ns tf Fall Time ––– 12 ––– Ciss Input Capacitance ––– 1510 ––– Coss Output Capacitance ––– 320 ––– pF Crss Reverse Transfer Capacitance ––– 130 ––– Coss Output Capacitance ––– 1130 ––– Coss Output Capacitance ––– 210 ––– Crss eff. Effective Output Capacitance ––– 320 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy mJ IAR Avalanche Current
 A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 9.3 (Body Diode) A ISM Pulsed Source Current ––– ––– 74 (Body Diode)
 VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 37 56 ns Qrr Reverse Recovery Charge ––– 52 78 nC RG = 6.2Ω Conditions VGS = 10V Max. 180 5.6 VGS = 0V, VDS = 0V to 64V  Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 5.6A  TJ = 25°C, IF = 5.6A, VDD = 15V di/dt = 100A/µs  TJ = 25°C, IS = 5.6A, VGS = 0V  showing the integral reverse p-n junction diode. Typ. ––– ––– VGS = 10V VGS = 0V VDS = 25V VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 64V, ƒ = 1.0MHz VDD = 40V,  ID = 5.6A MOSFET symbol VDS = VGS, ID = 250µA VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125°C ƒ = 1.0MHz VDS = 15V, ID = 5.6A VDS = 40V VGS = 20V VGS = -20V ID = 5.6A

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IRF7493PbF www.irf.com 3 Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 I D , D ra in -t o -S o u rc e C u rr e n t (A ) 3.5V 20µs PULSE WIDTH Tj = 25°C 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 I D , D ra in -t o -S o u rc e C u rr e n t (A ) 3.5V 20µs PULSE WIDTH Tj = 150°C 
           
           3.0 4.0 5.0 6.0 VGS, Gate-to-Source Voltage (V) 0.10 1.00 10.00 100.00 I D , D ra in -t o -S o u rc e C u rr e n t (Α ) TJ = 25°C TJ = 150°C VDS = 25V 20µs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 R D S (o n ) , D ra in -t o -S o u rc e O n R e s is ta n c e (N o rm a liz e d ) ID = 9.3A VGS = 10V

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IRF7493PbF 4 www.irf.com Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1 10 100 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 C , C a p a c it a n c e ( p F ) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 0 10 20 30 40 50 60 QG Total Gate Charge (nC) 0 4 8 12 16 20 V G S , G a te -t o -S o u rc e V o lt a g e ( V ) VDS= 64V VDS= 40V VDS= 16V ID= 5.6A 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-toDrain Voltage (V) 0.1 1.0 10.0 100.0 I S D , R e v e rs e D ra in C u rr e n t (A ) TJ = 25°C TJ = 150°C VGS = 0V 0 1 10 100 1000 VDS , Drain-toSource Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o -S o u rc e C u rr e n t (A ) Tc = 25°C Tj = 150°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec

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IRF7493PbF www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms  ≤ 1   !≤ 0.1 %  

  
 + - Fig 9. Maximum Drain Current Vs. Ambient Temperature 25 50 75 100 125 150 TC , Case Temperature (°C) 0 2 4 6 8 10 I D , D ra in C u rr e n t (A ) 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) 0.01 0.1 1 10 100 T h e rm a l R e s p o n s e ( Z t h J C ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE )

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IRF7493PbF 6 www.irf.com Fig 13. On-Resistance Vs. Gate VoltageFig 12. On-Resistance Vs. Drain Current Fig 14a&b. Basic Gate Charge Test Circuit and Waveform Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + - 
 QG QGS QGD VG Charge tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20V 4.0 8.0 12.0 16.0 VGS, Gate -to -Source Voltage (V) 0.010 0.020 0.030 R D S (o n ), D ra in -t o - S o u rc e O n R e s is ta n c e ( Ω ) ID = 5.6A 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) 0 100 200 300 400 500 E A S , S in g le P u ls e A v a la n c h e E n e rg y ( m J )  "#  # $# 0 20 40 60 80 ID , Drain Current (A) 0.011 0.012 0.013 R D S ( o n ) , D ra in -t o -S o u rc e O n R e s is ta n c e ( Ω ) VGS = 10V

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IRF7493PbF www.irf.com 7 Fig 16.  
 
   

 

for N-Channel HEXFET

Power MOSFETs %!& % '! ' • & (!)''  •
! ''  • & (&*+)'' %!!'!', !-! P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period 
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  Fig 17. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr

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IRF7493PbF 8 www.irf.com SO-8 Package Outline Dimensions are shown in millimeters (inches) SO-8 Part Marking e 1 D E y b A A1 H K L .189 .1497 0° .013 .050 BASIC .0532 .0040 .2284 .0099 .016 .1968 .1574 8° .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0° 1.27 BASIC 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 MIN MAX MILLIMETERSINCHES MIN MAX DIM 8° e c .0075 .0098 0.19 0.25 .025 BASIC 0.635 BASIC 8 7 5 6 5 D B E A e6X H 0.25 [.010] A 6 7 K x 45° 8X L 8X c y 0.25 [.010] C A B e1 A A18X b C 0.10 [.004] 431 2 FOOTPRINT 8X 0.72 [.028] 6.46 [.255] 3X 1.27 [.050] 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. NOTES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUSIONS. 6 DIMENS ION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 8X 1.78 [.070] DATE CODE (YWW) XXXX INTERNATIONAL RECTIFIER LOGO F7101 Y = LAST DIGIT OF THE YEAR PART NUMBER LOT CODE WW = WEEK EXAMPLE: THIS IS AN IRF7101 (MOSFET) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) A = ASSEMBLY S ITE CODE