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IRF7493TRPBF

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IRF7493TRPBF

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Part Number IRF7493TRPBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 80V 9.3A 8-SOIC
Datasheet IRF7493TRPBF Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 4,472 piece(s)
Unit Price $ 0.7115 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 23 - Jan 28 (Choose Expedited Shipping)
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Part Number # IRF7493TRPBF (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRF7493TRPBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF7493TRPBFDatasheet
Package8-SOIC (0.154", 3.90mm Width)
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1510pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)2.5W (Tc)
Rds On (Max) @ Id, Vgs15 mOhm @ 5.6A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

IRF7493TRPBF Datasheet

Page 1

Page 2

www.irf.com 1  SO-8 Top View 81 2 3 4 5 6 7 D D D DG S A S S A IRF7493PbF HEXFETPower MOSFET Notes through  are on page 9   High frequency DC-DC converters  Lead-Free Benefits Applications  Low Gate-to-Drain Charge to Reduce Switching Losses  Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)  Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max Qg (typ.) 80V 15m@VGS=10V 35nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 70°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation  W PD @TC = 70°C Maximum Power Dissipation  Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Lead ––– 20 RθJA Junction-to-Ambient  ––– 50 Max. 9.3 7.4 74 ± 20 80 -55 to + 150 2.5 0.02 1.6

Page 3

IRF7493PbF 2 www.irf.com Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 80 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.074 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 11.5 15 mΩ VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic @ TJ = 25°C (unless otherwise specified) gfs Forward Transconductance 13 ––– ––– S Qg Total Gate Charge ––– 35 53 Qgs Gate-to-Source Charge ––– 5.7 ––– Qgd Gate-to-Drain Charge ––– 12 ––– td(on) Turn-On Delay Time ––– 8.3 ––– tr Rise Time ––– 7.5 ––– td(off) Turn-Off Delay Time ––– 30 ––– ns tf Fall Time ––– 12 ––– Ciss Input Capacitance ––– 1510 ––– Coss Output Capacitance ––– 320 ––– pF Crss Reverse Transfer Capacitance ––– 130 ––– Coss Output Capacitance ––– 1130 ––– Coss Output Capacitance ––– 210 ––– Crss eff. Effective Output Capacitance ––– 320 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 9.3 (Body Diode) A ISM Pulsed Source Current ––– ––– 74 (Body Diode) VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 37 56 ns Qrr Reverse Recovery Charge ––– 52 78 nC RG = 6.2Ω Conditions VGS = 10V Max. 180 5.6 VGS = 0V, VDS = 0V to 64V  Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 5.6A  TJ = 25°C, IF = 5.6A, VDD = 15V di/dt = 100A/µs  TJ = 25°C, IS = 5.6A, VGS = 0V  showing the integral reverse p-n junction diode. Typ. ––– ––– VGS = 10V VGS = 0V VDS = 25V VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 64V, ƒ = 1.0MHz VDD = 40V,  ID = 5.6A MOSFET symbol VDS = VGS, ID = 250µA VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125°C ƒ = 1.0MHz VDS = 15V, ID = 5.6A VDS = 40V VGS = 20V VGS = -20V ID = 5.6A

Page 4

IRF7493PbF www.irf.com 3 Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 I D , D ra in -t o -S o u rc e C u rr e n t (A ) 3.5V 20µs PULSE WIDTH Tj = 25°C 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 I D , D ra in -t o -S o u rc e C u rr e n t (A ) 3.5V 20µs PULSE WIDTH Tj = 150°C                         3.0 4.0 5.0 6.0 VGS, Gate-to-Source Voltage (V) 0.10 1.00 10.00 100.00 I D , D ra in -t o -S o u rc e C u rr e n t (Α ) TJ = 25°C TJ = 150°C VDS = 25V 20µs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 R D S (o n ) , D ra in -t o -S o u rc e O n R e s is ta n c e (N o rm a liz e d ) ID = 9.3A VGS = 10V

Page 5

IRF7493PbF 4 www.irf.com Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1 10 100 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 C , C a p a c it a n c e ( p F ) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 0 10 20 30 40 50 60 QG Total Gate Charge (nC) 0 4 8 12 16 20 V G S , G a te -t o -S o u rc e V o lt a g e ( V ) VDS= 64V VDS= 40V VDS= 16V ID= 5.6A 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-toDrain Voltage (V) 0.1 1.0 10.0 100.0 I S D , R e v e rs e D ra in C u rr e n t (A ) TJ = 25°C TJ = 150°C VGS = 0V 0 1 10 100 1000 VDS , Drain-toSource Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o -S o u rc e C u rr e n t (A ) Tc = 25°C Tj = 150°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec

Page 6

IRF7493PbF www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms  ≤ 1   !≤ 0.1 %     + - Fig 9. Maximum Drain Current Vs. Ambient Temperature 25 50 75 100 125 150 TC , Case Temperature (°C) 0 2 4 6 8 10 I D , D ra in C u rr e n t (A ) 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) 0.01 0.1 1 10 100 T h e rm a l R e s p o n s e ( Z t h J C ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE )

Page 7

IRF7493PbF 6 www.irf.com Fig 13. On-Resistance Vs. Gate VoltageFig 12. On-Resistance Vs. Drain Current Fig 14a&b. Basic Gate Charge Test Circuit and Waveform Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + -  QG QGS QGD VG Charge tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T LVDS + - VDD DRIVER A 15V 20V 4.0 8.0 12.0 16.0 VGS, Gate -to -Source Voltage (V) 0.010 0.020 0.030 R D S (o n ), D ra in -t o - S o u rc e O n R e s is ta n c e ( Ω ) ID = 5.6A 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) 0 100 200 300 400 500 E A S , S in g le P u ls e A v a la n c h e E n e rg y ( m J )  " #  #  $# 0 20 40 60 80 ID , Drain Current (A) 0.011 0.012 0.013 R D S ( o n ) , D ra in -t o -S o u rc e O n R e s is ta n c e ( Ω ) VGS = 10V

Page 8

IRF7493PbF www.irf.com 7 Fig 16.          for N-Channel HEXFETPower MOSFETs %!& % '! ' • & (!)''  • ! ''  • & (&*+)'' %!!'!', !-! P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period    + - + + +- - -     • ./ '! 01 • !.!-2 3  • ) '! 0 !44 •  3  5.3'!   Fig 17. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr

Page 9

IRF7493PbF 8 www.irf.com SO-8 Package Outline Dimensions are shown in millimeters (inches) SO-8 Part Marking e 1 D E y b A A1 H K L .189 .1497 0° .013 .050 BASIC .0532 .0040 .2284 .0099 .016 .1968 .1574 8° .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0° 1.27 BASIC 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 MIN MAX MILLIMETERSINCHES MIN MAX DIM 8° e c .0075 .0098 0.19 0.25 .025 BASIC 0.635 BASIC 8 7 5 6 5 D B E A e6X H 0.25 [.010] A 6 7 K x 45° 8X L 8X c y 0.25 [.010] C A B e1 A A18X b C 0.10 [.004] 431 2 FOOTPRINT 8X 0.72 [.028] 6.46 [.255] 3X 1.27 [.050] 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. NOTES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUSIONS. 6 DIMENS ION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 8X 1.78 [.070] DATE CODE (YWW) XXXX INTERNATIONAL RECTIFIER LOGO F7101 Y = LAST DIGIT OF THE YEAR PART NUMBER LOT CODE WW = WEEK EXAMPLE: THIS IS AN IRF7101 (MOSFET) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) A = ASSEMBLY S ITE CODE

IRF7493TRPBF Reviews

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Bry*****Sahni

December 22, 2020

They are components and they work. Wasn’t expecting anything more or anything less.

Dama*****cmahon

December 9, 2020

It is so great to order from a supplier that provides so many shipping options at reasonable cost. It couldn't be any easier to order from Heisener. Great job!

Cad*****Parsa

December 2, 2020

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Axel*****rett

November 28, 2020

Replaced a diode in my distortion pedal. Sounds different (lower growl) but in a good way...LOL!

Kad*****Lal

November 28, 2020

High level customer service, and quick response.

Noel*****lanc

November 25, 2020

Can't speak to the long term reliability as of yet, but they seem to be of decent quality and I don't expect any issues.

Lea*****oover

November 20, 2020

the parts work as they should. Amazing price perfect all round many thanks

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