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IRFI9634GPBF

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IRFI9634GPBF

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Part Number IRFI9634GPBF
Manufacturer Vishay Siliconix
Description MOSFET P-CH 250V 4.1A TO220FP
Datasheet IRFI9634GPBF Datasheet
Package TO-220-3 Full Pack, Isolated Tab
In Stock 902 piece(s)
Unit Price $ 3.1500 *
Lead Time Can Ship Immediately
Estimated Delivery Time Dec 4 - Dec 9 (Choose Expedited Shipping)
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Part Number # IRFI9634GPBF (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRFI9634GPBF Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRFI9634GPBFDatasheet
PackageTO-220-3 Full Pack, Isolated Tab
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds680pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)35W (Tc)
Rds On (Max) @ Id, Vgs1 Ohm @ 2.5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

IRFI9634GPBF Datasheet

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Document Number: 91168 www.vishay.com S09-0062-Rev. A, 02-Feb-09 1 Power MOSFET IRFI9634G, SiHFI9634G Vishay Siliconix FEATURES • Advanced Process Technology • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 62 mH, RG = 25 Ω, IAS = - 4.1 A (see fig. 12). c. ISD ≤ - 4.1 A, dI/dt ≤ - 640 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) - 250 RDS(on) (Ω) VGS = - 10 V 1.0 Qg (Max.) (nC) 38 Qgs (nC) 8.0 Qgd (nC) 18 Configuration Single S G D P-Channel MOSFET SDG TO-220 FULLPAK ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRFI9634GPbF SiHFI9634G-E3 SnPb IRFI9634G SiHFI9634G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 250 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 4.1 ATC = 100 °C - 2.6 Pulsed Drain Currenta IDM - 16 Linear Derating Factor 0.28 W/°C Single Pulse Avalanche Energyb EAS 520 mJ Repetitive Avalanche Currenta IAR - 4.1 A Repetitive Avalanche Energya EAR 3.5 mJ Maximum Power Dissipation TC = 25 °C PD 35 W Peak Diode Recovery dV/dtc dV/dt - 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply

Page 3

www.vishay.com Document Number: 91168 2 S09-0062-Rev. A, 02-Feb-09 IRFI9634G, SiHFI9634G Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - 65 °C/W Maximum Junction-to-Case (Drain) RthJC - 3.6 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA - 250 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - - 0.27 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 250 V, VGS = 0 V - - - 25 µA VDS = - 200 V, VGS = 0 V, TJ = 150 °C - - - 250 Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 2.5 A b - - 1.0 Ω Forward Transconductance gfs VDS = - 50 V, ID = - 4.1 A b 2.2 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 - 680 - pF Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss - 40 - Drain to Sink Capacitance C f = 1.0 MHz - 12 - Total Gate Charge Qg VGS = - 10 V ID = - 4.1 A, VDS = - 200 V, see fig. 6 and 13b - - 38 nC Gate-Source Charge Qgs - - 8.0 Gate-Drain Charge Qgd - - 18 Turn-On Delay Time td(on) VDD = - 130 V, ID = - 4.1 A, RG = 12 Ω, RD= 31 Ω, see fig. 10b - 12 - ns Rise Time tr - 23 - Turn-Off Delay Time td(off) - 34 - Fall Time tf - 21 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact - 4.5 - nH Internal Source Inductance LS - 7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode - - - 4.1 A Pulsed Diode Forward Currenta ISM - - - 16 Body Diode Voltage VSD TJ = 25 °C, IS = - 4.1 A, VGS = 0 V b - - - 6.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 4.1 A, dI/dt = -100 A/µs b - 190 290 ns Body Diode Reverse Recovery Charge Qrr - 1.5 2.2 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G

Page 4

Document Number: 91168 www.vishay.com S09-0062-Rev. A, 02-Feb-09 3 IRFI9634G, SiHFI9634G Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, T C= 150 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature

Page 5

www.vishay.com Document Number: 91168 4 S09-0062-Rev. A, 02-Feb-09 IRFI9634G, SiHFI9634G Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area

Page 6

Document Number: 91168 www.vishay.com S09-0062-Rev. A, 02-Feb-09 5 IRFI9634G, SiHFI9634G Vishay Siliconix Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. - 10 V + - VDS VDD VGS 10 % 90 % VDS td(on) tr td(off) tf A RG IAS 0.01 Ωtp D.U.T. LVDS + - V DD - 20 V Driver 15 V IAS VDS tp

Page 7

www.vishay.com Document Number: 91168 6 S09-0062-Rev. A, 02-Feb-09 IRFI9634G, SiHFI9634G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit QGS QGD QG VG Charge - 10 V D.U.T. - 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. + -

Page 8

Document Number: 91168 www.vishay.com S09-0062-Rev. A, 02-Feb-09 7 IRFI9634G, SiHFI9634G Vishay Siliconix Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91168. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = - 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - - - - + + + * VGS = - 5 V for logic level and - 3 V drive devices Peak Diode Recovery dV/dt Test Circuit VDD • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer RG Compliment N-Channel of D.U.T. for driver

IRFI9634GPBF Reviews

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Ali***** Vo

November 22, 2020

These little guys worked perfect for my wiring project. Reliable, good quality.

Kyle*****swas

November 17, 2020

Components all tested within limits of specifications. Components came packaged in an easy to identify resealable bag and will work well for my projects.

Nala*****ecker

November 10, 2020

The pricing is great. This is the first time I use Heisener Electronics but I will recommend it to my business partners.

Ami*****eber

November 3, 2020

Sure appreciate your quality, expertise and professional service. Thank you so much!!!

Mar*****omero

November 2, 2020

Quality electronic components plus fast response.Thank you.

IRFI9634GPBF Guarantees

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We provide 90 days warranty.

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