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IRL3705NPBF

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IRL3705NPBF

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Part Number IRL3705NPBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 55V 89A TO-220AB
Datasheet IRL3705NPBF Datasheet
Package TO-220-3
In Stock 8,126 piece(s)
Unit Price $ 2.0600 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 25 - Jan 30 (Choose Expedited Shipping)
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Part Number # IRL3705NPBF (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRL3705NPBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRL3705NPBFDatasheet
PackageTO-220-3
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C89A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs98nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 25V
Vgs (Max)��16V
FET Feature-
Power Dissipation (Max)170W (Tc)
Rds On (Max) @ Id, Vgs10 mOhm @ 46A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

IRL3705NPBF Datasheet

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IRL3705NPbF 1 2018-05-25 Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 89 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 63 IDM Pulsed Drain Current  310 W PD @TC = 25°C Maximum Power Dissipation 170 Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy  340 mJ IAR Avalanche Current  46 A EAR Repetitive Avalanche Energy  17 mJ dv/dt Peak Diode Recovery dv/dt  5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 0.90 °C/W RJA Junction-to-Ambient ––– 62 RCS Case-to-Sink, Flat, Greased Surface 0.50 ––– G D S Gate Drain Source TO-220AB IRL3705NPbF HEXFET® Power MOSFET D S G VDSS 55V RDS(on) max. 0.01 ID 89A Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry.  Logic - Level Gate Drive  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Lead-Free Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRL3705NPbF TO-220 Tube 50 IRL3705NPbF S D G

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IRL3705NPbF 2 2018-05-25 Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)  VDD = 25V, starting TJ = 25°C, L = 320H, RG = 25, IAS = 46A.(See fig.12)  ISD 46A, di/dt 250A/µs, VDD V(BR)DSS, TJ  175°C.  Pulse width 300µs; duty cycle  2%.  Calculated continuous current based on maximum allowable junction temperature; for recommended current- handling of the package refer to Design TIP # 93-4 . Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On- Resistance ––– ––– 0.010  VGS = 10V, ID = 46A ––– ––– 0.012 VGS = 5.0V, ID = 46A  ––– ––– 0.018 VGS = 4.0V, ID = 39A  VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Trans conductance 50 ––– ––– S VDS = 25V, ID = 46A IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V,VGS = 0V,TJ =150°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 98 nC ID = 46A Qgs Gate-to-Source Charge ––– ––– 19 VDS = 44V Qgd Gate-to-Drain Charge ––– ––– 49 VGS = 5.0V , See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 12 ––– ns VDD = 28V tr Rise Time ––– 140 ––– ID = 46A td(off) Turn-Off Delay Time ––– 37 ––– RG= 1.8VGS = 5.0V  tf Fall Time ––– 78 ––– RD= 0.59See Fig. 10 LD Internal Drain Inductance ––– 4.5 ––– Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 3600 ––– pF VGS = 0V Coss Output Capacitance ––– 870 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 320 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 89 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 310 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 46A,VGS = 0V  trr Reverse Recovery Time ––– 94 140 ns TJ = 25°C ,IF = 46A Qrr Reverse Recovery Charge ––– 290 440 nC di/dt = 100A/µs  ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS +LD) nH

Page 4

IRL3705NPbF 3 2018-05-25 Fig. 2 Typical Output Characteristics Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance vs. Temperature Fig. 1 Typical Output Characteristics 1 10 100 1000 0.1 1 10 100 I , D ra in -t o- S ou rc e C ur re nt ( A ) D V , Drain-to-Source Voltage (V)DS A 20µs PULSE WIDTH T = 25°CJ VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 1 10 100 1000 0.1 1 10 100 I , D ra in -t o- S ou rc e C ur re nt ( A ) D V , Drain-to-Source Voltage (V)DS A 20µs PULSE WIDTH T = 175°C VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V J 1 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 T = 25°CJ GSV , Gate-to-Source Voltage (V) DI , D ra in -t o -S o u rc e C u rr e n t (A ) T = 175°CJ A V = 25V 20µs PULSE WIDTH DS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 JT , Junction Temperature (°C) R , D ra in -t o- S ou rc e O n R es is ta nc e D S (o n ) (N or m al iz ed ) V = 10V GS A I = 77AD

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IRL3705NPbF 4 2018-05-25 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area Fig. 7 Typical Source-to-Drain Diode Forward Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 0 1000 2000 3000 4000 5000 6000 1 10 100 C , C ap ac ita nc e (p F ) DSV , Drain-to-Source Voltage (V) A V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gdC iss C oss C rss 0 3 6 9 12 15 0 20 40 60 80 100 120 140 Q , Total Gate Charge (nC)G V , G at e- to -S ou rc e V ol ta ge ( V ) G S A FOR TEST CIRCUIT SEE FIGURE 13 I = 46A V = 44V V = 28V D DS DS 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 2.8 T = 25°CJ V = 0V GS V , Source-to-Drain Voltage (V) I , R ev er se D ra in C ur re nt ( A ) SD S D A T = 175°CJ 1 10 100 1000 1 10 100 V , Drain-to-Source Voltage (V)DS I , D ra in C ur re nt ( A ) OPERATION IN THIS AREA LIMITED BY R D DS(on) 10µs 100µs 1ms 10ms A T = 25°C T = 175°C Single Pulse C J

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IRL3705NPbF 5 2018-05-25 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current vs. Case Temperature Fig 10a. Switching Time Test Circuit Fig 10b. Switching Time Waveforms 25 50 75 100 125 150 175 0 20 40 60 80 100 T , Case Temperature ( C) I , D ra in C ur re nt ( A ) °C D LIMITED BY PACKAGE 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 Notes:1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C P t t DM 1 2 t , Rectangular Pulse Duration (sec) T h e rm a l R e sp o n se (Z ) 1 th JC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE(THERMAL RESPONSE)

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IRL3705NPbF 6 2018-05-25 Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Fig 13b. Gate Charge Test Circuit Fig 13a. Gate Charge Waveform 0 200 400 600 800 25 50 75 100 125 150 175 J E , S in gl e P ul se A va la nc he E ne rg y (m J) A S A Starting T , Junction Temperature (°C) V = 25V I TOP 19A 33A BOTTOM 46A DD D RG IAS 0.01tp D.U.T LVDS + - VDD DRIVER A 15V 10V tp V(BR)DSS IAS

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IRL3705NPbF 7 2018-05-25 Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs

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IRL3705NPbF 8 2018-05-25 TO-220 Package Outline (Dimensions are shown in millimeters (inches) TO-220 Part Marking Information TO-220AB packages are not recommended for Surface Mount Application.

IRL3705NPBF Reviews

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Thadd*****iswas

December 21, 2020

Heisener has everything! Each product is easy to search and navigate. No minimum quantities. Fast shipping!

Iva*****har

December 20, 2020

It fit exactly in the same location as the original. Works great and no problem. Good purchase.

Leigh*****uffman

December 19, 2020

Everything is good. Well made terminal blocks. Good consistency and I found no bad ones in the bunch.

Lawr***** Byrd

December 12, 2020

arrived well within time bracket, put this firm on my suppliers list, many thanks

John*****lynn

December 8, 2020

Great product at a good price. No complaints.

IRL3705NPBF Guarantees

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We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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