| Part Number | IXTT52N30P |
|---|---|
| Manufacturer | IXYS |
| Description | MOSFET N-CH 300V 52A TO-268 |
| Datasheet | IXTT52N30P Datasheet |
| Package | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
| In Stock | 363 piece(s) |
| Unit Price | $ 5.5937 * |
| Lead Time | Can Ship Immediately |
| Estimated Delivery Time | Jan 25 - Jan 30 (Choose Expedited Shipping) |
| Request for Quotation |
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Part Number # IXTT52N30P (Transistors - FETs, MOSFETs - Single) is manufactured by IXYS and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.
For IXTT52N30P specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add IXTT52N30P with quantity into BOM. Heisener.com does NOT require any registration to request a quote of IXTT52N30P.
| Manufacturer | IXYS |
| Category | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Datasheet | IXTT52N30PDatasheet |
| Package | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
| Series | PolarHT? |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 300V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3490pF @ 25V |
| Vgs (Max) | ��20V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Rds On (Max) @ Id, Vgs | 66 mOhm @ 500mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-268 |
| Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
© 2013 IXYS CORPORATION, All Rights Reserved DS99115F(9/13) PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTT52N30P IXTQ52N30P VDSS = 300V I D25 = 52A RDS(on) 73m Symbol Test Conditions Maximum Ratings V DSS T J = 25C to 150C 300 V V DGR T J = 25C to 150C, R GS = 1M 300 V V GSS Continuous 20 V V GSM Transient 30 V I D25 T C = 25C 52 A I DM T C = 25C, Pulse Width Limited by T JM 150 A I A T C = 25C 52 A E AS T C = 25C 1 J dv/dt IS IDM, VDD VDSS, TJ 150°C 10 V/ns P D T C = 25C 400 W T J -55 ... +150 C T JM 150 C T stg -55 ... +150 C T L Maximum Lead Temperature for Soldering 300 °C T SOLD 1.6 mm (0.062in.) from Case for 10s 260 °C M d Mounting Torque (TO-3P) 1.13 / 10 Nm/lb.in Weight TO-286 4.0 g TO-3P 5.5 g Symbol Test Conditions Characteristic Values (T J = 25C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, I D = 250μA 300 V V GS(th) V DS = V GS , I D = 250μA 2.5 5.0 V I GSS V GS = 20V, V DS = 0V 100 nA I DSS V DS = V DSS , V GS = 0V 25 A T J = 125C 250 A R DS(on) V GS = 10V, I D = 0.5 • I D25 , Note 1 73 m Features Fast Intrinsic Rectifier Avalanche Rated Low R DS(ON) and Q G Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls TO-3P (IXTQ) D G S G = Gate D = Drain S = Source Tab = Drain TO-268 (IXTT) S G D (Tab) D (Tab)
IXTT52N30P IXTQ52N30P IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Note 1. Pulse test, t 300s, duty cycle, d 2%. Symbol Test Conditions Characteristic Values (T J = 25C Unless Otherwise Specified) Min. Typ. Max. g fs V DS = 10V, I D = 0.5 • I D25 , Note 1 20 30 S C iss 3490 pF C oss V GS = 0V, V DS = 25V, f = 1MHz 550 pF C rss 130 pF t d(on) 24 ns t r 22 ns t d(off) 60 ns t f 20 ns Q g(on) 110 nC Q gs V GS = 10V, V DS = 0.5 • V DSS , I D = 0.5 • I D25 25 nC Q gd 53 nC R thJC 0.31 C/W R thCS TO-3P 0.25 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = 25C Unless Otherwise Specified) Min. Typ. Max. I S V GS = 0V 52 A I SM Repetitive, Pulse Width Limited by T JM 150 A V SD I F = I S , V GS = 0V, Note 1 1.5 V t rr 250 ns Q RM 3.0 μC I F = 25A, -di/dt = 100A/s V R = 100V, V GS = 0V Resistive Switching Times V GS = 10V, V DS = 0.5 • V DSS , I D = 0.5 • I D25 R G = 4 (External) TO-3P Outline 1 - GATE 2,4 - DRAIN 3 - SOURCE TO-268 Outline 1 - GATE 2,4 - DRAIN 3 - SOURCE
© 2013 IXYS CORPORATION, All Rights Reserved IXTT52N30P IXTQ52N30P Fig. 1. Output Characteristics @ TJ = 25ºC 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS - Volts I D - A m p e re s VGS = 10V 8V 5V 6V 7V Fig. 2. Extended Output Characteristics @ TJ = 25ºC 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 VDS - Volts I D - A m p e re s VGS = 10V 9V 6V 5V 7V 8V Fig. 3. Output Characteristics @ TJ = 125ºC 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts I D - A m p e re s 6V 5V VGS = 10V 8V 7V Fig. 4. RDS(on) Normalized to ID = 26A Value vs. Junction Temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade R D S (o n ) - N o rm a liz e d VGS = 10V I D = 52A I D = 26A Fig. 5. RDS(on) Normalized to ID = 26A Value vs. Drain Current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 100 120 140 ID - Amperes R D S (o n ) - N o rm a liz e d VGS = 10V TJ = 125ºC TJ = 25ºC Fig. 6. Maximum Drain Current vs. Case Temperature 0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade I D - A m p e re s
IXTT52N30P IXTQ52N30P IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 7. Input Admittance 0 10 20 30 40 50 60 70 80 90 100 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts I D - A m p e re s TJ = 125ºC 25ºC - 40ºC Fig. 8. Transconductance 0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80 90 100 ID - Amperes g f s - S ie m e n s TJ = - 40ºC 125ºC 25ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 20 40 60 80 100 120 140 160 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VSD - Volts I S - A m p e re s TJ = 125ºC TJ = 25ºC Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 QG - NanoCoulombs V G S - V o lts VDS = 150V I D = 26A I G = 10mA Fig. 11. Capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 VDS - Volts C a p a ci ta n ce - P ic o F a ra d s f = 1 MHz Ciss Crss Coss Fig. 12. Forward-Bias Safe Operating Area 1 10 100 1000 10 100 1,000 VDS - Volts I D - A m p e re s TJ = 150ºC TC = 25ºC Single Pulse 100µs 1ms RDS(on) Limit 25µs DC 10ms
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