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NCS2500SNT1G

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NCS2500SNT1G

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Part Number NCS2500SNT1G
Manufacturer ON Semiconductor
Description IC OPAMP CFA 200MHZ 5TSOP
Datasheet NCS2500SNT1G Datasheet
Package SOT-23-5 Thin, TSOT-23-5
In Stock 42,080 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 1 - Jun 6 (Choose Expedited Shipping)
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Part Number # NCS2500SNT1G (Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps) is manufactured by ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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NCS2500SNT1G Specifications

ManufacturerON Semiconductor
CategoryIntegrated Circuits (ICs) - Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
Datasheet NCS2500SNT1GDatasheet
PackageSOT-23-5 Thin, TSOT-23-5
Series-
Amplifier TypeCurrent Feedback
Number of Circuits1
Output Type-
Slew Rate450 V/µs
Gain Bandwidth Product-
-3db Bandwidth200MHz
Current - Input Bias2µA
Voltage - Input Offset700µV
Current - Supply1.1mA
Current - Output / Channel100mA
Voltage - Supply, Single/Dual (±)5 V ~ 10 V, ��2.5 V ~ 5 V
Operating Temperature-40°C ~ 85°C
Mounting TypeSurface Mount
Package / CaseSOT-23-5 Thin, TSOT-23-5
Supplier Device Package5-TSOP

NCS2500SNT1G Datasheet

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 Semiconductor Components Industries, LLC, 2005 May, 2005 − Rev. 1 1 Publication Order Number: NCS2500/D NCS2500 1.1 mA 200 MHz Current Feedback Op Amp NCS2500 is a 1.1 mA 200 MHz current feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The current feedback architecture allows for a superior bandwidth and low power consumption. Features • −3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 200 MHz Typ • Slew Rate 450 V/s • Supply Current 1.1 mA • Input Referred Voltage Noise 4.0 nV/ Hz • THD −55 dB (f = 5.0 MHz, VO = 2.0 Vp−p) • Output Current 100 mA • Pin Compatible with EL5161, LMH6723, MAX4452 • Pb−Free Packages are Available Applications • Portable Video • Line Drivers • Radar/Communication Receivers • Set Top Box • NTSC/PAL/HDTV Figure 1. Frequency Response: Gain (dB) vs. Frequency Av = +2.0, RL = 100  2 1 −1 −2 −3 −4 −6 0.01 1 100 1000 N O R M A IL IZ E D G A IN (d B ) FREQUENCY (MHz) 0 −5 3 VS = ± 5V VOUT = 0.7V Gain = +2 RF = 1.2k RL = 100 VS = ± 5V VOUT = 0.5V VS = ± 2.5V VOUT = 2.0V VS = ± 5V VOUT = 2.0V VS = ± 2.5V VOUT = 0.7V VS = ± 2.5V VOUT = 0.5V 0.1 10 MARKING DIAGRAMS SO−8 D SUFFIX CASE 751 YA0, N2500 = NCS2500 A = Assembly Location L = Wafer Lot Y = Year W = Work Week M = Date Code  = Pb−Free Package 1 8 N2500 ALYW  1 8 SC−70−5 (SC−88A) SQ SUFFIX CASE 419A YA0M 5 1 5 4 1 2 3 1 5 SOT23−5 (TSOP−5) SN SUFFIX CASE 483 1 5 YA0YW http://onsemi.com 8 7 6 5 1 2 3 4 NC −IN +IN VEE NC VCC OUT NC (Top View) SO−8 PINOUT + − 1 3 −IN OUT 2VEE +IN 4 VCC5 (Top View) SOT23−5/SC70−5 PINOUT −+ See detailed ordering and shipping information in the package dimensions section on page 13 of this data sheet. ORDERING INFORMATION  

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NCS2500 http://onsemi.com 2 PIN FUNCTION DESCRIPTION Pin (SO−8) Pin (SOT23/SC70) Symbol Function Equivalent Circuit 6 1 OUT Output VCC OUT VEE ESD 4 2 VEE Negative Power Supply 3 3 +IN Non−inverted Input VCC −IN VEE +IN ESDESD 2 4 −IN Inverted Input See Above 7 5 VCC Positive Power Supply 1, 5, 8 N/A NC No Connect +IN CC OUT VCC VEE Figure 2. Simplified Device Schematic −IN

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NCS2500 http://onsemi.com 3 ATTRIBUTES Characteristics Value ESD Human Body Model Machine Model Charged Device Model 2.0 kV (Note 1) 200 V 1.0 kV Moisture Sensitivity (Note 2) Level 1 Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in 1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV. 2. For additional information, see Application Note AND8003/D. MAXIMUM RATINGS Parameter Symbol Rating Unit Power Supply Voltage VS 11 VDC Input Voltage Range VI VS VDC Input Differential Voltage Range VID VS VDC Output Current IO 100 mA Maximum Junction Temperature (Note 3) TJ 150 ° C Operating Ambient Temperature TA −40 to +85 ° C Storage Temperature Range Tstg −60 to +150 ° C Power Dissipation PD (See Graph) mW Thermal Resistance, Junction−to−Air SO−8 SC70−5 SOT23−5 RJA 172 215 154 ° C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 150° C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the “overheated’’ condition for an extended period can result in device damage. Figure 3. Power Dissipation vs. Temperature 1400 1000 800 600 400 0 −50 25 100 150 M a x im u m P o w e r D is s a p a ti o n ( m W ) Ambient Temperature (° C) 1200 200 −25 0 75 12550 SC70 Pkg SO−8 Pkg SOT23 Pkg

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NCS2500 http://onsemi.com 4 AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40° C to +85° C, RL = 100  to GND, RF = 1.2 k, AV = +2.0, VIN = 0 V, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 2.0 Vp−p 200 140 MHz GF0.1dB 0.1 dB Gain Flatness Bandwidth AV = +2.0 30 MHz dG Differential Gain AV = +2.0, RL = 150 , f = 3.58 MHz 0.02 % dP Differential Phase AV = +2.0, RL = 150 , f = 3.58 MHz 0.1 ° TIME DOMAIN RESPONSE SR Slew Rate AV = +2.0, Vstep = 2.0 V 450 V/s ts Settling Time 0.01% 0.1% AV = +2.0, Vstep = 2.0 V AV = +2.0, Vstep = 2.0 V 35 18 ns tr tf Rise and Fall Time (10%−90%) AV = +2.0, Vstep = 2.0 V 5.0 ns HARMONIC/NOISE PERFORMANCE THD Total Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p, RL = 150  −55 dB HD2 2nd Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −67 dBc HD3 3rd Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −57 dBc IP3 Third−Order Intercept f = 10 MHz, VO = 2.0 Vp−p 35 dBm SFDR Spurious−Free Dynamic Range f = 5.0 MHz, VO = 2.0 Vp−p 58 dBc eN Input Referred Voltage Noise f = 1.0 MHz 4.0 nV Hz iN Input Referred Current Noise f = 1.0 MHz, Inverting f = 1.0 MHz, Non−Inverting 15 15 pA Hz

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NCS2500 http://onsemi.com 5 DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40° C to +85° C, RL = 100  to GND, RF = 1.2 k, AV = +2.0, VIN = 0 V, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit DC PERFORMANCE VOS Offset Voltage −4.0 0.7 +4.0 mV VIO/T Input Offset Voltage Temperature Coefficient 6.0 V/° C IIB Input Bias Current +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V (Note 4) −4.0 −4.0 2.0 0.4 +4.0 +4.0 A IIB/T Input Bias Current Temperature Coefficient +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V 40 10 nA/° C INPUT CHARACTERISTICS VCM Input Common Mode Voltage Range (Note 4) 3.0 4.0 V CMRR Common Mode Rejection Ratio (See Graph) 50 55 65 dB RIN Input Resistance +Input (Non−Inverting) −Input (Inverting) 4.0 350 M  CIN Differential Input Capacitance 1.0 pF OUTPUT CHARACTERISTICS ROUT Output Resistance 0.02  VO Output Voltage Swing 3.0 3.5 V IO Output Current 60 100 mA POWER SUPPLY VS Operating Voltage Supply 10 V IS Power Supply Current VO = 0 V 0.5 1.1 2.0 mA PSRR Power Supply Rejection Ratio (See Graph) 50 60 70 dB 4. Guaranteed by design and/or characterization.

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NCS2500 http://onsemi.com 6 AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40° C to +85° C, RL = 100  to GND, RF = 1.2 k, AV = +2.0, VIN = 0 V, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 1.0 Vp−p 180 130 MHz GF0.1dB 0.1 dB Gain Flatness Bandwidth AV = +2.0 15 MHz dG Differential Gain AV = +2.0, RL = 150 , f = 3.58 MHz 0.02 % dP Differential Phase AV = +2.0, RL = 150 , f = 3.58 MHz 0.1 ° TIME DOMAIN RESPONSE SR Slew Rate AV = +2.0, Vstep = 1.0 V 350 V/s ts Settling Time 0.01% 0.1% AV = +2.0, Vstep = 1.0 V AV = +2.0, Vstep = 1.0 V 40 18 ns tr tf Rise and Fall Time (10%−90%) AV = +2.0, Vstep = 1.0 V 8.0 ns HARMONIC/NOISE PERFORMANCE THD Total Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p, RL = 150  −55 dB HD2 2nd Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −67 dBc HD3 3rd Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −57 dBc IP3 Third−Order Intercept f = 10 MHz, VO = 1.0 Vp−p 35 dBm SFDR Spurious−Free Dynamic Range f = 5.0 MHz, VO = 1.0 Vp−p 58 dBc eN Input Referred Voltage Noise f = 1.0 MHz 4.0 nV Hz iN Input Referred Current Noise f = 1.0 MHz, Inverting f = 1.0 MHz, Non−Inverting 15 15 pA Hz

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NCS2500 http://onsemi.com 7 DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40° C to +85° C, RL = 100  to GND, RF = 1.2 k, AV = +2.0, VIN = 0 V, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit DC PERFORMANCE VOS Offset Voltage −4.0 0.5 +4.0 mV VIO/T Input Offset Voltage Temperature Coefficient 6.0 V/° C IIB Input Bias Current +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V (Note 5) −4.0 −4.0 2.0 0.4 +4.0 +4.0 A IIB/T Input Bias Current Temperature Coefficient +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V 40 10 nA/° C INPUT CHARACTERISTICS VCM Input Common Mode Voltage Range (Note 5) 1.3 1.5 V CMRR Common Mode Rejection Ratio (See Graph) 50 55 65 dB RIN Input Resistance +Input (Non−Inverting) −Input (Inverting) 4.0 350 M  CIN Differential Input Capacitance 1.0 pF OUTPUT CHARACTERISTICS ROUT Output Resistance 0.02  VO Output Voltage Swing 1.1 1.4 V IO Output Current 40 80 mA POWER SUPPLY VS Operating Voltage Supply 5.0 V IS Power Supply Current VO = 0 V 0.5 0.9 1.9 mA PSRR Power Supply Rejection Ratio (See Graph) 50 60 70 dB 5. Guaranteed by design and/or characterization. + − VIN RL RF RF VOUT Figure 4. Typical Test Setup (AV = +2.0, RF = 1.8 k or 1.2 k or 1.0 k, RL = 100 )

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NCS2500 http://onsemi.com 8 Figure 5. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 Figure 6. Frequency Response: Gain (dB) vs. Frequency Av = +1.0 Figure 7. Large Signal Frequency Response Gain (dB) vs. Frequency Figure 8. Small Signal Frequency Response Gain (dB) vs. Frequency Figure 9. Small Signal Step Response Vertical: 500 mV/div Horizontal: 10 ns/div Figure 10. Large Signal Step Response Vertical: 500 mV/div Horizontal: 10 ns/div 2 1 −1 −2 −3 −4 −6 0.01 1 10 1000 N O R M A IL IZ E D G A IN (d B ) FREQUENCY (MHz) 0 −5 3 VS = ± 5V VOUT = 0.5V Gain = +2 RF = 1.2k RL = 100 VS = ± 2.5V VOUT = 0.5V VS = ± 2.5V VOUT = 2.0V VS = ± 5V VOUT = 2.0V VS = ± 2.5V VOUT = 0.7V VS = ± 2.5V VOUT = 0.7V 6 3 −3 −6 −12 0.01 10 1000 N O R M A L IZ E D G A IN ( d B ) FREQUENCY (MHz) 0 −9 VS = ± 2.5V VOUT = 1.0V Gain = +1 RF = 1.2k RL = 100 VS = ± 5V VOUT = 1.0V VS = ± 2.5V VOUT = 0.7V VS = ± 5V VOUT = 0.7V VS = ± 2.5V VOUT = 0.5V VS = ± 5V VOUT = 0.5V 6 3 −3 −6 −12 N O R M A L IZ E D G A IN ( d B ) FREQUENCY (MHz) 0 −9 VOUT = 2.0V RL = 100 VS = ± 2.5V AV = +2 VS = ± 5V AV = +2 VS = ± 5V AV = +4 3 −3 −6 −12 N O R M A IL IZ E D G A IN (d B ) FREQUENCY (MHz) 0 −9 6 VS = ± 2.5V AV = +4 VS = ± 2.5V AV = +1 VS = ± 2.5V AV = +4 VS = ± 5V AV = +4 VS = ± 5V AV = +1 VS = ± 5V AV = +2 VOUT = 0.5V RL = 100 0.1 100 0.10 1 100 0.01 10 10000.10 1 100 0.01 10 10000.10 1 100 VS = ± 2.5V AV = +4

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NCS2500 http://onsemi.com 9 Figure 11. THD, HD2, HD3 vs. Frequency Figure 12. THD, HD2, HD3 vs. Output Voltage Figure 13. Input Referred Noise vs. Frequency Figure 14. CMRR vs. Frequency Figure 15. PSRR vs. Frequency Figure 16. Differential Gain 7 5 4 3 2 0 1 10 100 1000 V O L T A G E N O IS E ( n V / H z ) FREQUENCY (kHz) 6 1 ± 5.0V ± 2.5V 0 −10 −30 −40 −50 −60 0.01 0.1 10 100 P S R R (d B ) FREQUENCY (MHz) −20 −70 1 +5.0V −5.0V −2.5V +2.5 0.06 0.04 0.02 0 −0.02 −0.06 −0.8 −0.2 0.4 0.8 D IF F E R E N T IA L G A IN ( % ) OFFSET VOLTAGE (V) −0.04 −0.6 −0.4 0 0.6 3.58MHz 0.2 10MHz 4.43MHz VS = ± 5V RL = 150 20MHz −40 −45 −65 −70 −80 10 100 1000 D IS T O R T IO N ( d B ) FREQUENCY (MHz) −60 −75 −55 −50 VS = ± 5V VOUT = 2VPP RL = 150 HD3 HD2 THD −40 −60 −65 −70 0.5 3 D IS T O R T IO N ( d B ) VOUT (VPP) −50 1 2.5 3.52 −55 −45 1.5 4 VS = ± 5V f = 5MHz RL = 150 THD HD2 HD3 −20 −25 −45 −50 −55 −60 10k 100k 10M 100M C M R R ( d B ) FREQUENCY (Hz) −40 −65 1M −35 −30 VS = ± 5V

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