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hot SI3410DV-T1-GE3


For Reference Only

Part Number SI3410DV-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 30V 8A 6-TSOP
Datasheet SI3410DV-T1-GE3 Datasheet
Package SOT-23-6 Thin, TSOT-23-6
In Stock 100200 piece(s)
Unit Price $ 0.335 *
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Lead Time Can Ship Immediately
Estimated Delivery Time Oct 25 - Oct 30 (Choose Expedited Shipping)

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SI3410DV-T1-GE3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SI3410DV-T1-GE3 Datasheet
PackageSOT-23-6 Thin, TSOT-23-6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25��C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1295pF @ 15V
Vgs (Max)��20V
Power Dissipation (Max)2W (Ta), 4.1W (Tc)
Rds On (Max) @ Id, Vgs19.5 mOhm @ 5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

SI3410DV-T1-GE3 Datasheet

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