SI4408DY-T1-E3

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Vishay Siliconix Si4408DY Document Number: 70687 S09-0221-Rev. C, 09-Feb-09 www.vishay.com 1 N-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • PWM Optimized for Fast Switching • Low Switching Losses • Low Gate Drive Losses • 100 % Rg Tested APPLICATIONS • Self-Driven Synchronous Rectification PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 20 0.0045 at VGS = 10 V 21 0.0068 at VGS = 4.5 V 17 S S D D D S G D SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4408DY-T1-E3 (Lead (Pb)-free) Si4408DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 21 14 A TA = 70 °C 17 11 Pulsed Drain Current (10 µs Pulse Width) IDM 60 Continuous Source Current (Diode Conduction)a IS 2.9 1.3 Maximum Power Dissipationa TA = 25 °C PD 3.5 1.6 W TA = 70 °C 2.2 1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 29 35 °C/WSteady State 67 80 Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16

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www.vishay.com 2 Document Number: 70687 S09-0221-Rev. C, 09-Feb-09 Vishay Siliconix Si4408DY Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 1 µA VDS = 16 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 21 A 0.0035 0.0045 Ω VGS = 4.5 V, ID = 17 A 0.0054 0.0068 Forward Transconductancea gfs VDS = 6 V, ID = 21 A 60 S Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.75 1.1 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 21 A 21 32 nCGate-Source Charge Qgs 8.9 Gate-Drain Charge Qgd 6.4 Gate Resistance Rg 0.5 1.40 2.4 Ω Turn-On Delay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω 42 65 ns Rise Time tr 42 65 Turn-Off Delay Time td(off) 60 90 Fall Time tf 26 40 Source-Drain Reverse Recovery Time trr IF = 2.9 A, dI/dt = 100 A/µs 55 80 Output Characteristics 0 10 20 30 40 50 0 1 2 3 4 5 VGS = 10 V thru 4 V 3 V VDS - Drain-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D Transfer Characteristics 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TC = 125 °C VGS - Gate-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D - 55 °C 25 °C

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Document Number: 70687 S09-0221-Rev. C, 09-Feb-09 www.vishay.com 3 Vishay Siliconix Si4408DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.000 0.002 0.004 0.006 0.008 0.010 0 10 20 30 40 50 60 - O n -R e s is ta n c e ( Ω ) R D S (o n ) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 1 2 3 4 5 6 0 6 12 18 24 30 VDS = 10 V ID = 21 A - G a te -t o -S o u rc e V o lt a g e ( V ) Qg - Total Gate Charge (nC) V G S 1.0 1.2 1 10 60 0 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - S o u rc e C u rr e n t (A ) I S Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 900 1800 2700 3600 4500 0 4 8 12 16 20 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) C - C a p a c it a n c e ( p F ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 21 A TJ - Junction Temperature (°C) (N o rm a liz e d ) - O n -R e s is ta n c e R D S (o n ) 0.000 0.004 0.008 0.012 0.016 0.020 0 2 4 6 8 10 ID = 21 A - O n -R e s is ta n c e ( Ω ) R D S (o n ) VGS - Gate-to-Source Voltage (V)

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www.vishay.com 4 Document Number: 70687 S09-0221-Rev. C, 09-Feb-09 Vishay Siliconix Si4408DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70687. Threshold Voltage - 1.2 - 0.9 - 0.6 - 0.3 0.0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA V a ri a n c e ( V ) V G S (t h ) TJ - Temperature (°C) Single Pulse Power 0 30 60 10 20 P o w e r (W ) Time (s) 40 50 1 100 6001010-110-2 Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 67 °C/W 3. TJM - TA = PDMZthJA (t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 1 1010-110-4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e

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Vishay Siliconix Package Information Document Number: 71192 11-Sep-06 www.vishay.com 1 DIM MILLIMETERS INCHES Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004" LB A1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 S

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Application Note 826 Vishay Siliconix www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08 A P P L I C A T I O N N O T E RECOMMENDED MINIMUM PADS FOR SO-8 0 .2 4 6 (6 .2 4 8 ) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0 .1 5 2 (3 .8 6 1 ) 0 .0 4 7 (1 .1 9 4 ) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index Return to Index