Contact Us
SalesDept@heisener.com +86-755-83210559 ext. 811

SI4408DY-T1-E3

hotSI4408DY-T1-E3

SI4408DY-T1-E3

For Reference Only

Part Number SI4408DY-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 20V 14A 8-SOIC
Datasheet SI4408DY-T1-E3 Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 19,254 piece(s)
Unit Price $ 0.9771 *
Lead Time Can Ship Immediately
Estimated Delivery Time Aug 9 - Aug 14 (Choose Expedited Shipping)
Request for Quotation

Part Number # SI4408DY-T1-E3 (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For SI4408DY-T1-E3 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add SI4408DY-T1-E3 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of SI4408DY-T1-E3.

SI4408DY-T1-E3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SI4408DY-T1-E3Datasheet
Package8-SOIC (0.154", 3.90mm Width)
SeriesTrenchFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Rds On (Max) @ Id, Vgs4.5 mOhm @ 21A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

SI4408DY-T1-E3 Datasheet

Page 1

Page 2

Vishay Siliconix Si4408DY Document Number: 70687 S09-0221-Rev. C, 09-Feb-09 www.vishay.com 1 N-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • PWM Optimized for Fast Switching • Low Switching Losses • Low Gate Drive Losses • 100 % Rg Tested APPLICATIONS • Self-Driven Synchronous Rectification PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 20 0.0045 at VGS = 10 V 21 0.0068 at VGS = 4.5 V 17 S S D D D S G D SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4408DY-T1-E3 (Lead (Pb)-free) Si4408DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 21 14 A TA = 70 °C 17 11 Pulsed Drain Current (10 µs Pulse Width) IDM 60 Continuous Source Current (Diode Conduction)a IS 2.9 1.3 Maximum Power Dissipationa TA = 25 °C PD 3.5 1.6 W TA = 70 °C 2.2 1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 29 35 °C/WSteady State 67 80 Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16

Page 3

www.vishay.com 2 Document Number: 70687 S09-0221-Rev. C, 09-Feb-09 Vishay Siliconix Si4408DY Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 1 µA VDS = 16 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 21 A 0.0035 0.0045 Ω VGS = 4.5 V, ID = 17 A 0.0054 0.0068 Forward Transconductancea gfs VDS = 6 V, ID = 21 A 60 S Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.75 1.1 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 21 A 21 32 nCGate-Source Charge Qgs 8.9 Gate-Drain Charge Qgd 6.4 Gate Resistance Rg 0.5 1.40 2.4 Ω Turn-On Delay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω 42 65 ns Rise Time tr 42 65 Turn-Off Delay Time td(off) 60 90 Fall Time tf 26 40 Source-Drain Reverse Recovery Time trr IF = 2.9 A, dI/dt = 100 A/µs 55 80 Output Characteristics 0 10 20 30 40 50 0 1 2 3 4 5 VGS = 10 V thru 4 V 3 V VDS - Drain-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D Transfer Characteristics 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TC = 125 °C VGS - Gate-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D - 55 °C 25 °C

Page 4

Document Number: 70687 S09-0221-Rev. C, 09-Feb-09 www.vishay.com 3 Vishay Siliconix Si4408DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.000 0.002 0.004 0.006 0.008 0.010 0 10 20 30 40 50 60 - O n -R e s is ta n c e ( Ω ) R D S (o n ) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 1 2 3 4 5 6 0 6 12 18 24 30 VDS = 10 V ID = 21 A - G a te -t o -S o u rc e V o lt a g e ( V ) Qg - Total Gate Charge (nC) V G S 1.0 1.2 1 10 60 0 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - S o u rc e C u rr e n t (A ) I S Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 900 1800 2700 3600 4500 0 4 8 12 16 20 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) C - C a p a c it a n c e ( p F ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 21 A TJ - Junction Temperature (°C) (N o rm a liz e d ) - O n -R e s is ta n c e R D S (o n ) 0.000 0.004 0.008 0.012 0.016 0.020 0 2 4 6 8 10 ID = 21 A - O n -R e s is ta n c e ( Ω ) R D S (o n ) VGS - Gate-to-Source Voltage (V)

Page 5

www.vishay.com 4 Document Number: 70687 S09-0221-Rev. C, 09-Feb-09 Vishay Siliconix Si4408DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70687. Threshold Voltage - 1.2 - 0.9 - 0.6 - 0.3 0.0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA V a ri a n c e ( V ) V G S (t h ) TJ - Temperature (°C) Single Pulse Power 0 30 60 10 20 P o w e r (W ) Time (s) 40 50 1 100 6001010-110-2 Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 67 °C/W 3. TJM - TA = PDMZthJA (t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 1 1010-110-4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e

Page 6

Vishay Siliconix Package Information Document Number: 71192 11-Sep-06 www.vishay.com 1 DIM MILLIMETERS INCHES Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004" LB A1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 S

Page 7

Application Note 826 Vishay Siliconix www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08 A P P L I C A T I O N N O T E RECOMMENDED MINIMUM PADS FOR SO-8 0 .2 4 6 (6 .2 4 8 ) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0 .1 5 2 (3 .8 6 1 ) 0 .0 4 7 (1 .1 9 4 ) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index Return to Index

SI4408DY-T1-E3 Reviews

Average User Rating
5 / 5 (189)
★ ★ ★ ★ ★
5 ★
170
4 ★
19
3 ★
0
2 ★
0
1 ★
0

Write a Review

Not Rated
Thanks for Your Review!

Lina*****wart

July 16, 2020

Everything perfect. Great seller.

Zan*****itts

July 9, 2020

Every time I order, I always get faster than promised. For a small-time operator like me, you guys are the best!

Syl***** Pena

July 5, 2020

On time and as described, fast delivery. Would definitely buy again. Thx.

Kee***** Rege

July 4, 2020

I wish I had come across Heisener first, no one could help me for 2 days. You are now saved into the TOP of my favorites web list. Thank you very much.

Dann*****nroe

June 23, 2020

Nice to have an assortment on hand, just in case. Happy with this purchase.

Dang*****Scott

June 23, 2020

Well packaged and good condition with the parts, arrived on time, good customer service.

Jole*****hankar

June 11, 2020

Fast shipping. Got it in few dayss from Hong Kong

Call***** Dugal

June 7, 2020

Bought these to help prevent solar panels from feeding back. Works great and doesn't get as hot.

Kyl*****ullen

May 30, 2020

Work great, great price, I use a lot of them for battery chargers, not the first time ordered.

Chay*****idhar

May 30, 2020

Works just like the original one and even has the correct connectors installed.

SI4408DY-T1-E3 Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

SI4408DY-T1-E3 Packaging

Verify Products
Customized Labels
Professional Packaging
Sealing
Packing
Insepction

SI4408DY-T1-E3 Related Products

SIT8208AI-2F-28E-62.500000Y SIT8208AI-2F-28E-62.500000Y SiTIME, -40 TO 85C, 3225, 10PPM, 2.8V, 6, -, TrenchFET? View
SIT8209AI-23-18S-156.250000T SIT8209AI-23-18S-156.250000T SiTIME, -40 TO 85C, 3225, 50PPM, 1.8V, 1, -, TrenchFET? View
C1210C106M8PAC7800 C1210C106M8PAC7800 KEMET, CAP CER 10UF 10V X5R 1210, 1210 (3225 Metric), TrenchFET? View
hotBD244C BD244C Fairchild/ON Semiconductor, TRANS PNP 100V 6A TO-220, TO-220-3, TrenchFET? View
RWR80S1301FRBSL RWR80S1301FRBSL Vishay Dale, RES 1.3K OHM 2W 1% WW AXIAL, Axial, TrenchFET? View
RWR81S4R42FPB12 RWR81S4R42FPB12 Vishay Dale, RES 4.42 OHM 1W 1% WW AXIAL, Axial, TrenchFET? View
RNCF1210BTE931R RNCF1210BTE931R Stackpole Electronics Inc., RES SMD 931 OHM 0.1% 1/3W 1210, 1210 (3225 Metric), TrenchFET? View
DW-20-12-F-S-600 DW-20-12-F-S-600 Samtec Inc., .025" BOARD SPACERS, -, TrenchFET? View
CTVS06RF-19-28SB-LC CTVS06RF-19-28SB-LC Amphenol Aerospace Operations, CONN PLUG HSG FMALE 28POS INLINE, -, TrenchFET? View
357-020-524-201 357-020-524-201 EDAC Inc., CONN EDGE DUAL FMALE 20POS 0.156, -, TrenchFET? View
RBC19DRES-S13 RBC19DRES-S13 Sullins Connector Solutions, CONN EDGE DUAL FMALE 38POS 0.100, -, TrenchFET? View
NCP187AMT120TAG NCP187AMT120TAG ON Semiconductor, LDO REG, -, TrenchFET? View
Payment Methods
Delivery Services

Quick Inquiry

SI4408DY-T1-E3

Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

Do you have any question about SI4408DY-T1-E3?

+86-755-83210559 ext. 811 SalesDept@heisener.com heisener007 2354944915 Send Message

SI4408DY-T1-E3 Tags

  • SI4408DY-T1-E3
  • SI4408DY-T1-E3 PDF
  • SI4408DY-T1-E3 datasheet
  • SI4408DY-T1-E3 specification
  • SI4408DY-T1-E3 image
  • Vishay Siliconix
  • Vishay Siliconix SI4408DY-T1-E3
  • buy SI4408DY-T1-E3
  • SI4408DY-T1-E3 price
  • SI4408DY-T1-E3 distributor
  • SI4408DY-T1-E3 supplier
  • SI4408DY-T1-E3 wholesales

SI4408DY-T1-E3 is Available in