Contact Us
SalesDept@heisener.com +86-755-83210559 ext. 811

SI4459ADY-T1-GE3

hotSI4459ADY-T1-GE3

SI4459ADY-T1-GE3

For Reference Only

Part Number SI4459ADY-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET P-CH 30V 29A 8-SOIC
Datasheet SI4459ADY-T1-GE3 Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 9,080 piece(s)
Unit Price $ 0.5898 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 1 - Jun 6 (Choose Expedited Shipping)
Request for Quotation

Part Number # SI4459ADY-T1-GE3 (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For SI4459ADY-T1-GE3 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add SI4459ADY-T1-GE3 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of SI4459ADY-T1-GE3.

SI4459ADY-T1-GE3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SI4459ADY-T1-GE3Datasheet
Package8-SOIC (0.154", 3.90mm Width)
SeriesTrenchFET?
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs195nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds6000pF @ 15V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs5 mOhm @ 15A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

SI4459ADY-T1-GE3 Datasheet

Page 1

Page 2

Vishay Siliconix Si4459ADY Document Number: 69979 S11-1813-Rev. B, 12-Sep-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Adaptor Switch • Notebook Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 80 °C/W. d. Based on TC = 25 °C. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) d Qg (Typ.) - 30 0.005 at VGS = - 10 V - 29 61 nC 0.00775 at VGS = - 4.5 V - 23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 29 A TC = 70 °C - 23.5 TA = 25 °C - 19.7 a, b TA = 70 °C - 15.6 a, b Pulsed Drain Current IDM - 70 Continuous Source-Drain Diode Current TC = 25 °C IS - 6.5 TA = 25 °C - 2.9 a, b Avalanche Current L = 0.1 mH IAS - 30 Single-Pulse Avalanche Energy EAS 45 mJ Maximum Power Dissipation TC = 25 °C PD 7.8 W TC = 70 °C 5 TA = 25 °C 3.5 a, b TA = 70 °C 2.2 a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t 10 s RthJA 29 35 °C/W Maximum Junction-to-Foot Steady State RthJF 13 16 S S D D D S G D SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4459ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET

Page 3

www.vishay.com 2 Document Number: 69979 S11-1813-Rev. B, 12-Sep-11 Vishay Siliconix Si4459ADY This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 31 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ 5.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 100 VDS = - 20 V, VGS = 0 V - 75 VDS = - 30 V, VGS = 0 V, TJ = 75 °C - 10 µA VDS = - 20 V, VGS = 0 V, TJ = 75 °C - 3 On-State Drain Currenta ID(on) VDS  - 10 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 15 A 0.0039 0.005  VGS = - 4.5 V, ID = - 10 A 0.0062 0.00775 Forward Transconductancea gfs VDS = - 10 V, ID = - 15 A 24 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 6000 pFOutput Capacitance Coss 860 Reverse Transfer Capacitance Crss 790 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 20 A 129 195 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A 61 95 Gate-Source Charge Qgs 16.5 Gate-Drain Charge Qgd 23.5 Gate Resistance Rg f = 1 MHz 0.6 3 6  Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5  ID  - 10 A, VGEN = - 10 V, Rg = 1  16 30 ns Rise Time tr 16 30 Turn-Off DelayTime td(off) 80 150 Fall Time tf 20 40 Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5  ID  - 10 A, VGEN = - 4.5 V, Rg = 1  75 150 Rise Time tr 130 260 Turn-Off DelayTime td(off) 60 120 Fall Time tf 40 80 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 29 A Pulse Diode Forward Current ISM - 70 Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - 0.71 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C 67 130 ns Body Diode Reverse Recovery Charge Qrr 74 150 nC Reverse Recovery Fall Time ta 22 ns Reverse Recovery Rise Time tb 45

Page 4

Document Number: 69979 S11-1813-Rev. B, 12-Sep-11 www.vishay.com 3 Vishay Siliconix Si4459ADY This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 14 28 42 56 70 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D VGS = 10 thru 4 V VGS = 3 V 0.003 0.004 0.005 0.006 0.007 0.008 0 14 28 42 56 70 - O n -R e s is ta n c e (Ω ) R D S (o n ) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0 30 60 90 120 150 ID = 20 A - G a te -t o -S o u rc e V o lt a g e (V ) Qg - Total Gate Charge (nC) V G S VDS = 20 V VDS = 15 V VDS = 10 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.8 1.6 2.4 3.2 4.0 0.0 0.8 1.6 2.4 3.2 4.0 VGS - Gate-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D TC = 125 °C TC = 25 °C TC = - 55 °C Crss 0 1800 3600 5400 7200 9000 0 6 12 18 24 30 Ciss VDS - Drain-to-Source Voltage (V) C - C a p a c it a n c e (p F ) Coss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) (N o rm a liz e d ) - O n -R e s is ta n c e R D S (o n ) VGS = 10 V ID = 15 A VGS = 4.5 V

Page 5

www.vishay.com 4 Document Number: 69979 S11-1813-Rev. B, 12-Sep-11 Vishay Siliconix Si4459ADY This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) - S o u rc e C u rr e n t (A ) I S 1 0.01 0.001 0.1 10 100 TJ = 25 °CTJ = 150 °C - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA V a ri a n c e (V ) V G S (t h ) TJ - Temperature (°C) ID = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.006 0.012 0.018 0.024 0.030 0 2 4 6 8 10 - O n -R e s is ta n c e (Ω ) R D S (o n ) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 15 A 0 40 80 120 160 200 011100.0 0.01 Time (s) P o w e r (W ) 0.1 Safe Operating Area 0.01 100 1 100 0.01 - D ra in C u rr e n t (A ) I D 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1 ms 10 ms 100 ms 0.1 1 10 10 TA = 25 °C Single Pulse Limited by RDS(on)* 1 s DC 10 s BVDSS

Page 6

Vishay Siliconix Si4459ADY Document Number: 69979 S11-1813-Rev. B, 12-Sep-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 7 14 21 28 35 0 25 50 75 100 125 150 TC - Case Temperature (°C) I D - D ra in C u rr e n t (A ) Power, Junction-to-Foot 0 2 4 6 8 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) P o w e r (W ) Power Derating, Junction-to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) P o w e r (W )

Page 7

www.vishay.com 6 Document Number: 69979 S11-1813-Rev. B, 12-Sep-11 Vishay Siliconix Si4459ADY This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69979. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-2 000110110-110-3 100 0.2 0.1 0.05 0.02 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 1 0.1 0.01 Duty Cycle = 0.5 t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA (t) t1 t2 4. Surface MountedSingle Pulse Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 01110-110-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l Im p e d a n c e 1 0.1 0.01 Single Pulse 0.02 0.05

Page 8

Vishay Siliconix Package Information Document Number: 71192 11-Sep-06 www.vishay.com 1 DIM MILLIMETERS INCHES Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004" LB A1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 S

Page 9

Application Note 826 Vishay Siliconix www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08 A P P L I C A T I O N N O T E RECOMMENDED MINIMUM PADS FOR SO-8 0 .2 4 6 (6 .2 4 8 ) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0 .1 5 2 (3 .8 6 1 ) 0 .0 4 7 (1 .1 9 4 ) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index Return to Index

SI4459ADY-T1-GE3 Reviews

Average User Rating
5 / 5 (163)
★ ★ ★ ★ ★
5 ★
147
4 ★
16
3 ★
0
2 ★
0
1 ★
0

Write a Review

Not Rated
Thanks for Your Review!

Milo *****nathan

May 22, 2020

It works fine and does what it has designed for. No regrets.

Cody*****kins

May 20, 2020

The products are good, the amount is correct. The values are correct.

Paul*****Goda

May 18, 2020

Very happy for the fast shipping and good price!

Ever*****Bobal

May 15, 2020

Very effective shopping path, service steady as a rock, keep up the great work.

Wyn***** Lara

May 12, 2020

Excellent ease of using site both in finding products and ordering! Also shipping charges reasonable.

Maver*****achdeva

May 1, 2020

They worked as I expected. I'll definitely purchase again. Thank you!

Jayle*****unders

April 21, 2020

Excellent, high quality product at a reasonable price. Timely delivery. Highly recommend product and vendor.

Nicho*****onley

April 7, 2020

Awesome components selection and availability. Ordering process is easy. They don't spam me after the purchase.

Jess*****Kara

April 7, 2020

Thanks a lot! Ease of ordering and I love when they upgrade my shipping for free. What a nice thing to do.

Lanc*****dami

April 6, 2020

The order process is easy and user friendly, very helpful customer service, always fast shipping.

SI4459ADY-T1-GE3 Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

SI4459ADY-T1-GE3 Packaging

Verify Products
Customized Labels
Professional Packaging
Sealing
Packing
Insepction

SI4459ADY-T1-GE3 Related Products

2225Y1K00390FCR 2225Y1K00390FCR Knowles Syfer, CAP CER 2225, -, TrenchFET? View
1206Y0630561KCT 1206Y0630561KCT Knowles Syfer, CAP CER 1206, 1206 (3216 Metric), TrenchFET? View
TZM5239F-GS18 TZM5239F-GS18 Vishay Semiconductor Diodes Division, DIODE ZENER SOD80, DO-213AC, MINI-MELF, SOD-80, TrenchFET? View
hotMBRD1045T4G MBRD1045T4G ON Semiconductor, DIODE SCHOTTKY 45V 10A DPAK, TO-252-3, DPak (2 Leads + Tab), SC-63, TrenchFET? View
LTST-G683RGBW LTST-G683RGBW Lite-On Inc., LED RGB DIFFUSED 6SMD, 6-SMD, J-Lead, TrenchFET? View
SA90A R0G SA90A R0G TSC America Inc., DIODE, TVS, UNIDIRECTIONAL, 500W, DO-204AC, DO-15, Axial, TrenchFET? View
SM6227FT191R SM6227FT191R Stackpole Electronics Inc., RES SMD 191 OHM 1% 3W 6227, 6227 J-Lead, TrenchFET? View
RC1218FK-073R9L RC1218FK-073R9L Yageo, RES SMD 3.9 OHM 1W 1812 WIDE, Wide 1812 (4532 Metric), 1218, TrenchFET? View
9994150000 9994150000 Weidmuller, LM 5.08/06/90 3.5SN OR BX, -, TrenchFET? View
ESQT-111-02-F-D-680 ESQT-111-02-F-D-680 Samtec Inc., ELEVATED 2MM SOCKETS, -, TrenchFET? View
0877602436 0877602436 Molex, LLC, MGRID HDR DR RA GOLD 24CKT, -, TrenchFET? View
2-2013022-2 2-2013022-2 TE Connectivity AMP Connectors, CONN SKT SODIMM 204POS SMD, -, TrenchFET? View
Payment Methods
Delivery Services

Quick Inquiry

SI4459ADY-T1-GE3

Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

Do you have any question about SI4459ADY-T1-GE3?

+86-755-83210559 ext. 811 SalesDept@heisener.com heisener007 2354944915 Send Message

SI4459ADY-T1-GE3 Tags

  • SI4459ADY-T1-GE3
  • SI4459ADY-T1-GE3 PDF
  • SI4459ADY-T1-GE3 datasheet
  • SI4459ADY-T1-GE3 specification
  • SI4459ADY-T1-GE3 image
  • Vishay Siliconix
  • Vishay Siliconix SI4459ADY-T1-GE3
  • buy SI4459ADY-T1-GE3
  • SI4459ADY-T1-GE3 price
  • SI4459ADY-T1-GE3 distributor
  • SI4459ADY-T1-GE3 supplier
  • SI4459ADY-T1-GE3 wholesales

SI4459ADY-T1-GE3 is Available in