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STB85NF55T4

hotSTB85NF55T4

STB85NF55T4

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Part Number STB85NF55T4
Manufacturer STMicroelectronics
Description MOSFET N-CH 55V 80A D2PAK
Datasheet STB85NF55T4 Datasheet
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
In Stock 45,276 piece(s)
Unit Price $ 1.9404 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 4 - Jun 9 (Choose Expedited Shipping)
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Part Number # STB85NF55T4 (Transistors - FETs, MOSFETs - Single) is manufactured by STMicroelectronics and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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STB85NF55T4 Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet STB85NF55T4Datasheet
PackageTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SeriesSTripFET? II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds3700pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)300W (Tc)
Rds On (Max) @ Id, Vgs8 mOhm @ 40A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB85NF55T4 Datasheet

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This is information on a product in full production. July 2013 DocID8405 Rev 11 1/17 17 STB85NF55, STP85NF55 Automotive-grade N-channel 55 V, 0.0062 Ω typ., 42 A, STripFET™ II Power MOSFETs in D 2 PAK and TO-220 packages Datasheet − production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested Applications • Switching applications Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC- DC converters for telecom and computer applications, and applications with low gate charge driving requirements. TO-220D²PAK 1 2 3 TAB 1 3 TAB Order codes VDS @ TJmax RDS(on) max ID STB85NF55T4 55 V 0.008 Ω 80 A STP85NF55 Table 1. Device summary Order codes Marking Package Packaging STB85NF55T4 B85NF55 D²PAK Tape and reel STP85NF55 P85NF55 TO-220 Tube www.st.com

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Contents STB85NF55, STP85NF55 2/17 DocID8405 Rev 11 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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DocID8405 Rev 11 3/17 STB85NF55, STP85NF55 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage (V GS = 0) 55 V V GS Gate-source voltage ± 20 V I D (1) 1. Current limited by package Drain current (continuous) at T C = 25 °C 80 A I D (1) Drain current (continuous) at T C =100 °C 80 A I DM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 A P TOT Total dissipation at T C = 25 °C 300 W Derating factor 2.0 W/°C dv/dt (3) 3. I SD ≤ 80 A, di/dt ≤ 300 A/μs, V DD ≤ V (BR)DSS , T j ≤ T JMAX Peak diode recovery voltage slope 10 V/ns E AS (4) 4. Starting T J = 25 °C, I D = 40 A, V DD = 37.5 V Single pulse avalanche energy 980 mJ T J T stg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max. 0.5 °C/W R thj-amb Thermal resistance junction-ambient max. 62.5 °C/W

Page 5

Electrical characteristics STB85NF55, STP85NF55 4/17 DocID8405 Rev 11 2 Electrical characteristics (T CASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage I D = 250 μA, V GS = 0 55 V I DSS Zero gate voltage drain current (V GS = 0) V DS = 55 V 1 μA V DS = 55 V, T C =125 °C 10 μA I GSS Gate body leakage current (V DS = 0) V GS = ±20 V ±100 nA V GS(th) Gate threshold voltage V DS = V GS , I D = 250 μA 2 3 4 V R DS(on) Static drain-source on- resistance V GS = 10 V, I D = 40 A 0.0062 0.008 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g fs (1) 1. Pulsed: pulse duration=300μs, duty cycle 1.5% Forward transconductance V DS = 15 V, I D = 40 A - 120 S C iss Input capacitance V DS =25 V, f = 1 MHz, V GS = 0 - 3700 pF C oss Output capacitance - 900 pF C rss Reverse transfer capacitance - 310 pF Q g Total gate charge V DD = 60 V, I D = 80 A V GS =10 V - 120 150 nC Q gs Gate-source charge - 30 nC Q gd Gate-drain charge - 45 nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V DD = 30 V, I D = 40 A, R G =4.7 Ω, V GS =10 V Figure 14 and 19 - 25 - ns t r Rise time - 100 - ns t d(off) Turn-off delay time - 70 - ns t f Fall time - 35 - ns

Page 6

DocID8405 Rev 11 5/17 STB85NF55, STP85NF55 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit I SD Source-drain current - 80 A I SDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 320 A V SD (2) 2. Pulsed: pulse duration=300 μs, duty cycle 1.5% Forward on voltage I SD = 80 A, V GS = 0 - 1.5 V t rr Reverse recovery time I SD = 80 A, di/dt = 100 A/μs, V DD = 25 V, T J = 150 °C Figure 16 - 75 ns Q rr Reverse recovery charge - 210 nC I RRM Reverse recovery current - 5.5 A

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Electrical characteristics STB85NF55, STP85NF55 6/17 DocID8405 Rev 11 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on-resistance ID 100 10 1 0.1 0.1 1 100 VDS(V)10 (A) GC93850 K 10 10 10 10 tp(S)1010 10 -5 -4 -3 -2 -1 -2 -1 GC93840 ID 240 160 80 0 0 8 VDS(V)16 (A) 4 12 320 GC93620 ID 192 128 64 0 0 4 VGS(V)8 (A) 2 6 256 GC93630 GFS 40 30 20 10 0 8 ID(A) (S) 4 12 16 GC93640 RDS(on) 6.2 6.1 6.0 0 40 ID(A) (Ω) 20 60 6.3 6.4 80 GC93650

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DocID8405 Rev 11 7/17 STB85NF55, STP85NF55 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature VGS 4 0 0 30 Qg(nC) (V) 120 8 60 90 12 16 GC93660 C 6000 4000 2000 0 20 VDS(V) (pF) 10 8000 30 40 GC93670 VGS(th) 1.0 0.8 0.6 0.4 -50 0 TJ(°C) (norm) 1.2 50 100 GC93680 RDS(on) 1.4 1.0 0.6 0.2 -50 0 TJ(°C) (norm) 50 100 1.8 GC93690 VSD 0 40 ISD(A) (V) 20 60 80 0.3 0.6 0.9 1.2 GC93700 BVDSS -50 0 TJ(°C) (norm) 50 100 0.90 0.95 1.00 1.05 1.10 GC93710

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Test circuits STB85NF55, STP85NF55 8/17 DocID8405 Rev 11 3 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveforms AM01468v1 VGS PW VD RG RL D.U.T. 2200 μF 3.3 μF VDD AM01469v1 VDD 47kΩ 1kΩ 47kΩ 2.7kΩ 1kΩ 12V Vi=20V=VGMAX 2200 μF PW IG=CONST 100Ω 100nF D.U.T. VG AM01470v1 A D D.U.T. S B G 25 Ω A A B B RG G FAST DIODE D S L=100μH μF 3.3 1000 μF VDD AM01471v1 Vi Pw VD ID D.U.T. L 2200 μF 3.3 μF VDD AM01472v1 V(BR)DSS VDDVDD VD IDM ID AM01473v1 VDS ton tdon tdoff toff tftr 90% 10% 10% 0 0 90% 90% 10% VGS

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DocID8405 Rev 11 9/17 STB85NF55, STP85NF55 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK ® is an ST trademark.

STB85NF55T4 Reviews

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Yadi*****akar

May 22, 2020

Thousands of in stock parts with low cost shipping and standard quality.

Jaz***** Dada

May 21, 2020

All resistors exactly -0.01%. Pretty good.

Emers*****ntreras

May 20, 2020

Not messy and easy to handle. I've used these professionally and for my self, and they never failed me.

Kody*****fman

May 3, 2020

Perfect, functional, arrived a weeks earlier, excellent Seller. Recommended

Cla*****ura

May 3, 2020

On time and as described, fast delivery. Would definitely buy again. Thx.

Mil***** Seth

April 22, 2020

Every time I order, I always get faster than promised. For a small-time operator like me, you guys are the best!

Rei*****Shere

April 21, 2020

I like this way to add a project, choose existing project to add components. I use this method frequently to keep track of my projects. Thanks Heisener!

Wre*****ana

April 12, 2020

Received Quickly. Excellent Communication. Capacitors Look Excellent.

Rael*****arker

April 10, 2020

Item came in time and looks as described.

Jeffe*****whney

April 10, 2020

Work great, great price, I use a lot of them for battery chargers, not the first time ordered.

STB85NF55T4 Guarantees

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