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STF5N52K3

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STF5N52K3

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Part Number STF5N52K3
Manufacturer STMicroelectronics
Description MOSFET N-CH 525V 4.4A TO-220FP
Datasheet STF5N52K3 Datasheet
Package TO-220-3 Full Pack
In Stock 375 piece(s)
Unit Price $ 0.9800 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jul 12 - Jul 17 (Choose Expedited Shipping)
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Part Number # STF5N52K3 (Transistors - FETs, MOSFETs - Single) is manufactured by STMicroelectronics and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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STF5N52K3 Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet STF5N52K3Datasheet
PackageTO-220-3 Full Pack
SeriesSuperMESH3?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)525V
Current - Continuous Drain (Id) @ 25°C4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds545pF @ 100V
Vgs (Max)��30V
FET Feature-
Power Dissipation (Max)25W (Tc)
Rds On (Max) @ Id, Vgs1.5 Ohm @ 2.2A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

STF5N52K3 Datasheet

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December 2010 Doc ID 16952 Rev 2 1/23 23 STB5N52K3, STD5N52K3, STF5N52K3 STP5N52K3, STU5N52K3 N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET D²PAK, DPAK, TO-220FP, TO-220, IPAK Features ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Application Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max ID Pw STB5N52K3 STD5N52K3 STF5N52K3 STP5N52K3 STU5N52K3 525 V < 1.5 Ω 4.4 A 70 W 70 W 25 W 70 W 70 W 1 2 3 TO-220 IPAK TO-220FP 1 2 3 3 2 1 DPAK 1 3 1 3 D²PAK D(2) G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STB5N52K3 5N52K3 D²PAK Tape and reel STD5N52K3 DPAK STF5N52K3 TO-220FP TubeSTP5N52K3 TO-220 STU5N52K3 IPAK www.st.com

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Contents STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 2/23 Doc ID 16952 Rev 2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

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STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Electrical ratings Doc ID 16952 Rev 2 3/23 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-220 D²PAK DPAK IPAK TO-220FP VDS Drain- source voltage 525 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 4.4 4.4 (1) 1. Limited only by maximum temperature allowed A ID Drain current (continuous) at TC = 100 °C 2.77 2.77 (1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 17.6 17.6(1) A PTOT Total dissipation at TC = 25 °C 70 25 W IAR Avalanche current, repetitive or not- repetitive (pulse width limited by TJ max) 2.2 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 100 mJ dv/dt(3) 3. ISD ≤ 4.4 A, di/dt ≤ 100 A/µs,VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Peak diode recovery voltage slope 12 V/ns VISO Insulation withstand voltage (AC) 2500 V TJ Tstg Operating junction temperature Storage temperature - 55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit TO-220 D²PAK TO-220FP IPAK DPAK Rthj-case Thermal resistance junction-case max. 1.79 5 1.79 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 100 °C/W Rthj-pcb Thermal resistance junction-pcb max. 30 50 °C/W TJ Maximum lead temperature for soldering purpose 300 300 °C/W

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Electrical characteristics STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 4/23 Doc ID 16952 Rev 2 2 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 525 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V; VDS=0 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 2.2 A 1.2 1.5 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 545 45 8 - pF pF pF Coss eq. (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS Equivalent output capacitance VDS = 0 to 420 V, VGS = 0 - 33 - pF Rg Gate input resistance f=1 MHz open drain - 4.7 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 420 V, ID = 4.4 A, VGS = 10 V (see Figure 19) - 17 3 10 - nC nC nC

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STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Electrical characteristics Doc ID 16952 Rev 2 5/23 The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 420 V, ID = 4.4 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) - 9 11 29 16 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 4.4 17.6 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 4.4 A, VGS = 0 - 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.4 A, di/dt = 100 A/µs VDD= 60 V (see Figure 20) - 210 1.3 12 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.4 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 20) - 240 1.6 13 ns µC A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BVGSO Gate-source breakdown voltage Igs=± 1 mA (open drain) 30 - V

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Electrical characteristics STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 6/23 Doc ID 16952 Rev 2 2.1 Electrical characteristics (curves) Figure 2. Safe operating area TO-220, D²PAK Figure 3. Thermal impedance TO-220, D²PAK Figure 4. Safe operating area TO-220FP Figure 5. Thermal impedance TO-220FP Figure 6. Safe operating area DPAK, IPAK Figure 7. Thermal impedance DPAK, IPAK ID 10 1 0.1 0.1 1 100 VDS(V)10 (A) O pe ra tio n in th is a re a is Li m ite d by m ax R D S (o n) 10µs 100µs 1ms 10ms 0.01 Tj=150°C Tc=25°C Single pulse AM08837v1 ID 10 1 0.1 0.1 1 100 VDS(V)10 (A) O pe ra tio n in th is a re a is Li m ite d by m ax R D S (o n) 10µs 100µs 1ms 10ms 0.01 Tj=150°C Tc=25°C Single pulse AM08838v1 ID 10 1 0.1 0.1 1 100 VDS(V)10 (A) O pe ra tio n in th is a re a is Li m ite d by m ax R D S (o n) 10µs 100µs 1ms 10ms 0.01 Tj=150°C Tc=25°C Single pulse AM08839v1

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STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Electrical characteristics Doc ID 16952 Rev 2 7/23 Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Normalized BVDSS vs temperature Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations ID 6 4 2 0 0 10 VDS(V)20 (A) 5 15 25 8 10 5V 6V 7V VGS=10V AM08840v1 ID 3 2 1 0 0 4 VGS(V)8 (A) 2 6 4 5 6 7 1 3 5 7 9 VDS=15V AM08841v1 BVDSS -75 TJ(°C) (norm) -25 7525 125 0.90 0.95 1.00 1.05 1.10 ID=1mA AM08842v1 RDS(on) 1.15 1.10 1.05 1.00 0 2.0 ID(A) (Ω) 1.0 3.0 1.20 1.25 1.30 1.35 VGS=10V 4.0 1.40 1.45 AM08843v1 VGS 6 4 2 0 0 5 Qg(nC) (V) 20 8 10 15 10 VDD=420V ID=4.4A 25 12 300 200 100 0 400 VDS VGS 50 150 250 350 AM08844v1 C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss AM08845v1

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Electrical characteristics STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 8/23 Doc ID 16952 Rev 2 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Maximum avalanche energy vs starting Tj VGS(th) 1.00 0.90 0.80 0.70 -75 TJ(°C) (norm) -25 1.10 7525 125 ID=50µA AM08846v1 RDS(on) 2.0 1.5 1.0 0.5 -75 TJ(°C) (norm) -25 7525 125 2.5 0 AM08847v1 VSD 0 2 ISD(A) (V) 1 53 4 0 0.1 0.2 0.3 0.4 0.5 0.6 TJ=-50°C TJ=150°C TJ=25°C 0.7 0.8 0.9 AM08848v1 EAS 0 40 TJ(°C) (mJ) 20 10060 80 0 10 20 30 40 120 140 50 60 70 80 100 110 ID=4.4A 90 AM08849v1

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STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3 Test circuits Doc ID 16952 Rev 2 9/23 3 Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load switching and diode recovery times Figure 21. Unclamped inductive load test circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform AM01468v1 VGS PW VD RG RL D.U.T. 2200 μF 3.3 μF VDD AM01469v1 VDD 47kΩ 1kΩ 47kΩ 2.7kΩ 1kΩ 12V Vi=20V=VGMAX 2200 μF PW IG=CONST 100Ω 100nF D.U.T. VG AM01470v1 A D D.U.T. S B G 25 Ω A A B B RG G FAST DIODE D S L=100μH μF 3.3 1000 μF VDD AM01471v1 Vi Pw VD ID D.U.T. L 2200 μF 3.3 μF VDD AM01472v1 V(BR)DSS VDDVDD VD IDM ID AM01473v1 VDS ton tdon tdoff toff tftr 90% 10% 10% 0 0 90% 90% 10% VGS

STF5N52K3 Reviews

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Kenne*****ivedi

June 30, 2020

Worked like it was intended.

Lilah*****stian

June 29, 2020

So far so good. I need to see how they hold up.

Gray*****Crane

June 9, 2020

A convenient and small package. I have used 2 of the 10 units so far and they work fine.

Ell*****Wise

June 8, 2020

Great item and excellent seller! Would highly recommend. Thank you. Trustworthy

Kair*****rdova

June 8, 2020

They worked as I expected. I'll definitely purchase again. Thank you!

Zach*****Bahl

June 3, 2020

I recently became very interested in electronics and I have used several of them. They work great.

Nels*****urohit

June 1, 2020

I always have good experiences in dealing with Heisener Electronics. They have the components I need in stock, their search function is great, and shipping is fast and always as promised.

Kayli*****wning

May 27, 2020

Purchasing from Heisener means the real part is obtained no worried for product quality.

Remin*****Bender

May 20, 2020

It is so great to order from a supplier that provides so many shipping options at reasonable cost. It couldn't be any easier to order from Heisener. Great job!

Salva*****Raymond

May 18, 2020

Most of the reviews for this product were positive so I took a chance.

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