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STP5NK60ZFP

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STP5NK60ZFP

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Part Number STP5NK60ZFP
Manufacturer STMicroelectronics
Description MOSFET N-CH 600V 5A TO-220FP
Datasheet STP5NK60ZFP Datasheet
Package TO-220-3 Full Pack
In Stock 99,978 piece(s)
Unit Price $ 1.9800 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jul 12 - Jul 17 (Choose Expedited Shipping)
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Part Number # STP5NK60ZFP (Transistors - FETs, MOSFETs - Single) is manufactured by STMicroelectronics and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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STP5NK60ZFP Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet STP5NK60ZFPDatasheet
PackageTO-220-3 Full Pack
SeriesSuperMESH?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds690pF @ 25V
Vgs (Max)��30V
FET Feature-
Power Dissipation (Max)25W (Tc)
Rds On (Max) @ Id, Vgs1.6 Ohm @ 2.5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

STP5NK60ZFP Datasheet

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DPAK 1 2 3 TAB TO-220 1 2 3 TO-220FP 1 3 2 TAB D(2, TAB) G(1) S(3) AM01475V1 Features Order codes VDS @ Tjmax. RDS(on) max. Package STD5NK60ZT4 650 V 1.6 Ω DPAK STP5NK60Z TO-220 STP5NK60ZFP TO-220FP • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD4NK60ZT4 STP5NK60Z STP5NK60ZFP N-channel 600 V, 1.2 Ω typ., 5 A SuperMESH™ Power MOSFET in DPAK, TO-220 and TO-220FP packages STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Datasheet DS2857 - Rev 8 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com

Page 3

1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit DPAK,TO-220 TO-220FP VDS Drain-source voltage 600 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 5 5 (1) A ID Drain current (continuous) at TC = 100 °C 3.16 3.16 (1) A IDM (2) Drain current (pulsed) 20 20 (1) A PTOT Total dissipation at TC = 25 °C 90 25 W ESD Gate-source human body model (R = 1.5 kΩ, C = 100 pF) 3 kV VISO Insulation withstand voltage (RMS) from all three leads to external heat-sink (t = 1 s, TC = 25 °C) 2.5 kV dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns Tj Operating junction temperature range -55 to 150 °C Tstg Storage temperature range 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 5 A, di/dt ≤ 200 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 2. Thermal data Symbol Parameter Value Unit DPAK TO-220 TO-220FP Rthj-case Thermal resistance junction-case 1.39 5 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 220 mJ STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Electrical ratings DS2857 - Rev 8 page 2/24

Page 4

2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 V 600 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C (1) 50 µA IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 2.5 A 1.2 1.6 Ω 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 690 pF Coss Output capacitance 90 Crss Reverse transfer capacitance 20 Coss eq. (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 40 pF Qg Total gate charge VDD = 400 V, ID = 5 A, VGS = 0 to 10 V (see Figure 16. Test circuit for gate charge behavior) - 26 34 nCQgs Gate-source charge 6 Qgd Gate-drain charge 14 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 2.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15. Test circuit for resistive load switching times and Figure 20. Switching time waveform) - 16 - ns tr Rise time 25 td(off) Turn-off delay time 36 tr Fall time 25 tr(Voff) Off-voltage rise time VDD = 480 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17. Test circuit for inductive load switching and diode recovery times and Figure 20. Switching time waveform) 12 tf Fall time 10 tc Cross-over time 24 STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Electrical characteristics DS2857 - Rev 8 page 3/24

Page 5

Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 5 A ISDM (1) Source-drain current (pulsed) 20 VSD (2) Forward on voltage ISD = 5 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs VDD = 30 V (see Figure 17. Test circuit for inductive load switching and diode recovery times) - 485 ns Qrr Reverse recovery charge 2.7 μC IRRM Reverse recovery current 11 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. Table 8. Gate-Source Zener Diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ±1 mA, ID = 0 A 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Electrical characteristics DS2857 - Rev 8 page 4/24

Page 6

2.1 Electrical characteristics curves Figure 1. Safe operating area for DPAK and TO-220 Figure 2. Thermal impedance for DPAK and TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP GC20940 10 -1 10 -2 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 K t p (s) Figure 5. Output characterisics Figure 6. Transfer characteristics STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Electrical characteristics curves DS2857 - Rev 8 page 5/24

Page 7

Figure 7. Static drain-source on resistance Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristic STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Electrical characteristics curves DS2857 - Rev 8 page 6/24

Page 8

Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Maximum avalanche energy vs temperature STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Electrical characteristics curves DS2857 - Rev 8 page 7/24

Page 9

3 Test circuits Figure 15. Test circuit for resistive load switching times AM01468v1 VD RG RL D.U.T. 2200 μF VDD 3.3 μF+ pulse width VGS Figure 16. Test circuit for gate charge behavior AM01469v1 47 kΩ 1 kΩ 47 kΩ 2.7 kΩ 1 kΩ 12 V IG= CONST 100 Ω 100 nF D.U.T. +pulse width VGS 2200 μF VG VDD Figure 17. Test circuit for inductive load switching and diode recovery times AM01470v1 A D D.U.T. S B G 25 Ω A A B B RG G D S 100 µH µF 3.3 1000 µF VDD D.U.T. + _ + fast diode Figure 18. Unclamped inductive load test circuit AM01471v1 VD ID D.U.T. L VDD+ pulse width Vi 3.3 µF 2200 µF Figure 19. Unclamped inductive waveform AM01472v1 V(BR)DSS VDDVDD VD IDM ID Figure 20. Switching time waveform AM01473v1 0 VGS 90% VDS 90% 10% 90% 10% 10% ton td(on) tr 0 toff td(off) tf STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Test circuits DS2857 - Rev 8 page 8/24

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4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Package information DS2857 - Rev 8 page 9/24

STP5NK60ZFP Reviews

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Josh*****ekhon

June 25, 2020

Awesome selection! Great service for whatever electronic parts you want! Prices are competitive as well. Thank you!

Cla*****lack

June 22, 2020

Item sent as described. Showed up quickly. Worked as it said and would recommend again.

Bobb*****ewal

June 21, 2020

I can get a patience and respect for each order. Thank you!

Enoc*****charia

June 7, 2020

Works just like the original one and even has the correct connectors installed.

Joce*****Bean

June 7, 2020

Most of the reviews for this product were positive so I took a chance.

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June 5, 2020

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Andi*****dhar

May 26, 2020

It arrived on time. I was able to finish a repair before Sunday service and with no over time. Easy to work with.

Shan*****lison

May 16, 2020

Excellent ! STP5NK60ZFP item arrived very quickly and was packaged well, no issues.

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May 14, 2020

Great website. Well organized and easy to search products.

Ely*****Knox

May 13, 2020

Fast shipping, items are exactly as promised. Reliable company to work with.

STP5NK60ZFP Guarantees

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