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STP5NK60ZFP

hot STP5NK60ZFP

STP5NK60ZFP

For Reference Only

Part Number STP5NK60ZFP
Manufacturer STMicroelectronics
Description MOSFET N-CH 600V 5A TO-220FP
Datasheet STP5NK60ZFP Datasheet
Package TO-220-3 Full Pack
In Stock 99978 piece(s)
Unit Price $ 1.98 *
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STP5NK60ZFP

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STP5NK60ZFP Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet STP5NK60ZFP Datasheet
PackageTO-220-3 Full Pack
SeriesSuperMESH?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25��C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds690pF @ 25V
Vgs (Max)��30V
Power Dissipation (Max)25W (Tc)
Rds On (Max) @ Id, Vgs1.6 Ohm @ 2.5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

STP5NK60ZFP Datasheet

Page 1

Page 2

DPAK 1 2 3 TAB TO-220 1 2 3 TO-220FP 1 3 2 TAB D(2, TAB) G(1) S(3) AM01475V1 Features Order codes VDS @ Tjmax. RDS(on) max. Package STD5NK60ZT4 650 V 1.6 Ω DPAK STP5NK60Z TO-220 STP5NK60ZFP TO-220FP • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD4NK60ZT4 STP5NK60Z STP5NK60ZFP N-channel 600 V, 1.2 Ω typ., 5 A SuperMESH™ Power MOSFET in DPAK, TO-220 and TO-220FP packages STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Datasheet DS2857 - Rev 8 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com

Page 3

1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit DPAK,TO-220 TO-220FP VDS Drain-source voltage 600 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 5 5 (1) A ID Drain current (continuous) at TC = 100 °C 3.16 3.16 (1) A IDM (2) Drain current (pulsed) 20 20 (1) A PTOT Total dissipation at TC = 25 °C 90 25 W ESD Gate-source human body model (R = 1.5 kΩ, C = 100 pF) 3 kV VISO Insulation withstand voltage (RMS) from all three leads to external heat-sink (t = 1 s, TC = 25 °C) 2.5 kV dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns Tj Operating junction temperature range -55 to 150 °C Tstg Storage temperature range 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 5 A, di/dt ≤ 200 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 2. Thermal data Symbol Parameter Value Unit DPAK TO-220 TO-220FP Rthj-case Thermal resistance junction-case 1.39 5 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 220 mJ STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Electrical ratings DS2857 - Rev 8 page 2/24

Page 4

2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 V 600 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C (1) 50 µA IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 2.5 A 1.2 1.6 Ω 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 690 pF Coss Output capacitance 90 Crss Reverse transfer capacitance 20 Coss eq. (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 40 pF Qg Total gate charge VDD = 400 V, ID = 5 A, VGS = 0 to 10 V (see Figure 16. Test circuit for gate charge behavior) - 26 34 nCQgs Gate-source charge 6 Qgd Gate-drain charge 14 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 2.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15. Test circuit for resistive load switching times and Figure 20. Switching time waveform) - 16 - ns tr Rise time 25 td(off) Turn-off delay time 36 tr Fall time 25 tr(Voff) Off-voltage rise time VDD = 480 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17. Test circuit for inductive load switching and diode recovery times and Figure 20. Switching time waveform) 12 tf Fall time 10 tc Cross-over time 24 STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Electrical characteristics DS2857 - Rev 8 page 3/24

Page 5

Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 5 A ISDM (1) Source-drain current (pulsed) 20 VSD (2) Forward on voltage ISD = 5 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs VDD = 30 V (see Figure 17. Test circuit for inductive load switching and diode recovery times) - 485 ns Qrr Reverse recovery charge 2.7 μC IRRM Reverse recovery current 11 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. Table 8. Gate-Source Zener Diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ±1 mA, ID = 0 A 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Electrical characteristics DS2857 - Rev 8 page 4/24

Page 6

2.1 Electrical characteristics curves Figure 1. Safe operating area for DPAK and TO-220 Figure 2. Thermal impedance for DPAK and TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP GC20940 10 -1 10 -2 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 K t p (s) Figure 5. Output characterisics Figure 6. Transfer characteristics STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Electrical characteristics curves DS2857 - Rev 8 page 5/24

Page 7

Figure 7. Static drain-source on resistance Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristic STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Electrical characteristics curves DS2857 - Rev 8 page 6/24

Page 8

Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Maximum avalanche energy vs temperature STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Electrical characteristics curves DS2857 - Rev 8 page 7/24

Page 9

3 Test circuits Figure 15. Test circuit for resistive load switching times AM01468v1 VD RG RL D.U.T. 2200 μF VDD 3.3 μF+ pulse width VGS Figure 16. Test circuit for gate charge behavior AM01469v1 47 kΩ 1 kΩ 47 kΩ 2.7 kΩ 1 kΩ 12 V IG= CONST 100 Ω 100 nF D.U.T. +pulse width VGS 2200 μF VG VDD Figure 17. Test circuit for inductive load switching and diode recovery times AM01470v1 A D D.U.T. S B G 25 Ω A A B B RG G D S 100 µH µF 3.3 1000 µF VDD D.U.T. + _ + fast diode Figure 18. Unclamped inductive load test circuit AM01471v1 VD ID D.U.T. L VDD+ pulse width Vi 3.3 µF 2200 µF Figure 19. Unclamped inductive waveform AM01472v1 V(BR)DSS VDDVDD VD IDM ID Figure 20. Switching time waveform AM01473v1 0 VGS 90% VDS 90% 10% 90% 10% 10% ton td(on) tr 0 toff td(off) tf STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Test circuits DS2857 - Rev 8 page 8/24

Page 10

4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. STD5NK60ZT4, STP5NK60Z, STP5NK60ZFP Package information DS2857 - Rev 8 page 9/24

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