Contact Us
SalesDept@heisener.com 0755-83210559 ext. 805

SUB75P03-07-E3

hotSUB75P03-07-E3

SUB75P03-07-E3

For Reference Only

Part Number SUB75P03-07-E3
Manufacturer Vishay Siliconix
Description MOSFET P-CH 30V 75A D2PAK
Datasheet SUB75P03-07-E3 Datasheet
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
In Stock 1,007 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Sep 24 - Sep 29 (Choose Expedited Shipping)
Request for Quotation

Part Number # SUB75P03-07-E3 (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For SUB75P03-07-E3 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add SUB75P03-07-E3 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of SUB75P03-07-E3.

SUB75P03-07-E3 Specifications

ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet SUB75P03-07-E3Datasheet
PackageTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds9000pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs7 mOhm @ 30A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D2Pak)
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SUB75P03-07-E3 Datasheet

Page 1

Page 2

Vishay Siliconix SUB75P03-07, SUP75P03-07 Document Number: 71109 S10-2429-Rev. E, 25-Oct-10 www.vishay.com 1 P-Channel 30 V (D-S) 175 °C MOSFET FEATURES • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a - 30 0.007 at VGS = - 10 V ± 75 0.010 at VGS = - 4.5 V ± 75 SUP75P03-07 SUB75P03-07 DRAIN connected to TAB TO-220AB Top View G D S TO-263 SG Top View D Ordering Information: SUB75P03-07 (TO-263) SUB75P03-07-E3 (TO-263, Lead (Pb)-free) SUP75P03-07 (TO-220AB) SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free) S G D P-Channel MOSFET Notes: a. Package limited. b. Duty cycle  1 %. c. When mounted on 1" square PCB (FR-4 material). d. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID - 75a A TC = 125 °C - 65 Pulsed Drain Current IDM - 240 Avalanche Current IAR - 60 Repetitive Avalanche Energyb L = 0.1 mH EAR 180 mJ Power Dissipation TC = 25 °C (TO-220AB and TO-263) PD 187d W TA = 25 °C (TO-263) c 3.75 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient PCB Mount (TO-263)c RthJA 40 °C/WFree Air (TO-220AB) 62.5 Junction-to-Case RthJC 0.8 Available RoHS* COMPLIANT

Page 3

www.vishay.com 2 Document Number: 71109 S10-2429-Rev. E, 25-Oct-10 Vishay Siliconix SUB75P03-07, SUP75P03-07 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 30 V, VGS = 0 V, TJ = 175 °C - 250 On-State Drain Currenta ID(on) VDS = -5 V, VGS = - 10 V - 120 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 30 A 0.0055 0.007  VGS = - 10 V, ID = - 30 A, TJ = 125 °C 0.010 VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.013 VGS = - 4.5 V, ID = - 20 A 0.008 0.010 Forward Transconductancea gfs VDS = - 15 V, ID = - 75 A 20 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1 MHz 9000 pFOutput Capacitance Coss 1565 Reversen Transfer Capacitance Crss 715 Total Gate Chargec Qg VDS = - 15 V, VGS = - 10 V, ID = - 75 A 160 240 nCGate-Source Chargec Qgs 32 Gate-Drain Chargec Qgd 30 Turn-On Delay Timec td(on) VDD = - 15 V, RL = 0.2  ID  - 75 A, VGEN = - 10 V, Rg = 2.5  25 40 ns Rise Timec tr 225 360 Turn-Off Delay Timec td(off) 150 240 Fall Timec tf 210 340 Source-Drain Diode Ratings and Characteristicsb (TC = 25 °C) Continuous Current IS - 75 A Pulsed Current ISM - 240 Forward Voltagea VSD IF = - 75 A, VGS = 0 V - 1.2 - 1.5 V Reverse Recovery Time trr IF = - 75 A, dI/dt = 100 A/µs 55 100 ns Peak Reverse Recovery Current IRM(REC) 2.5 5 A Reverse Recovery Charge Qrr 0.07 0.25 µC

Page 4

Document Number: 71109 S10-2429-Rev. E, 25-Oct-10 www.vishay.com 3 Vishay Siliconix SUB75P03-07, SUP75P03-07 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Transconductance Capacitance 0 50 100 150 200 250 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D VGS = 10 V thru 6 V 5 V 3 V 4 V ID - Drain Current (A) - T ra n s c o n d u c ta n c e ( S ) g fs 125 °C 0 30 60 90 120 150 0 20 40 60 80 100 25 °C TC = - 55 °C 0 2000 4000 6000 8000 10 000 12 000 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) C - C a p a c it a n c e ( p F ) Ciss Coss Crss Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 0 40 80 120 160 200 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) - D ra in C u rr e n t (A ) I D 25 °C 125 °C TC = - 55 °C 0 0.005 0.010 0.015 0.020 0.025 0.030 0 20 40 60 80 100 120 ID - Drain Current (A) R D S (o n ) VGS = 10 V VGS = 4.5 V - O n -R e s is ta n c e (  ) 0 4 8 12 16 20 0 50 100 150 200 250 300 - G a te -t o -S o u rc e V o lt a g e ( V ) Qg - Total Gate Charge (nC) V G S VDS = 15 V ID = 75 A

Page 5

www.vishay.com 4 Document Number: 71109 S10-2429-Rev. E, 25-Oct-10 Vishay Siliconix SUB75P03-07, SUP75P03-07 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature Avalanche Current vs. Time 0 0.3 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 175 (N o rm a liz e d ) - O n -R e s is ta n c e TJ - Junction Temperature (°C) R D S (o n ) VGS = 10 V ID = 30 A tin (s) 1000 10 0.00001 0.001 0.1 1 100 (a ) I D a v 0.010.0001 IAV (A) at TA = 25 °C IAV (A) at TA = 150 °C 1 0.1 Source-Drain Diode Forward Voltage Drain Source Breakdown vs. Junction Temperature 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) - S o u rc e C u rr e n t (A ) I S 100 10 1 TJ = 25 °C TJ = 150 °C 25 30 35 40 45 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) (V ) V D S ID = 250 µA

Page 6

Document Number: 71109 S10-2429-Rev. E, 25-Oct-10 www.vishay.com 5 Vishay Siliconix SUB75P03-07, SUP75P03-07 THERMAL RATINGS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71109. Maximum Avalanche and Drain Current vs. Case Temperature 0 15 30 45 60 75 90 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) - D ra in C u rr e n t (A ) I D Safe Operating Area 1000 1 0.1 1 10 100 0.1 100 - D ra in C u rr e n t (A ) I D 1 ms 100 µs TC = 25 °C Single Pulse DC 10 ms 10 Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 100 ms Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (s) 2 1 0.1 0.01 10- 4 10- 3 10- 2 10- 1 1 N o rm a liz e d E ff e c ti v e T ra n s ie n t T h e rm a l I m p e d a n c e 10 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5

Page 7

Package Information www.vishay.com Vishay Siliconix Revison: 16-Jun-14 1 Document Number: 71195 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TO-220AB Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM M* 321 L L (1 ) D H (1 ) Q Ø P A F J(1) b(1) e(1) e E b C D2 MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471

SUB75P03-07-E3 Reviews

Average User Rating
5 / 5 (154)
★ ★ ★ ★ ★
5 ★
139
4 ★
15
3 ★
0
2 ★
0
1 ★
0

Write a Review

Not Rated
Thanks for Your Review!

Ezra*****hmukh

August 18, 2020

Fast delivery, good quality, 100% satisfacted

Brax*****Dewan

August 15, 2020

Very pleased purchasing experience, would definitely buy again.

Isma*****brien

August 10, 2020

Website and order clear, concise and user friendly. Thanks!

Lind*****Baker

August 7, 2020

It gives you a good quality product, with a great variety.. I will for sure order this set again when i start to run low

Skyl*****ierra

July 25, 2020

I've had no issues. Good product, would buy again.

Kath***** Rana

July 25, 2020

Very friendly online shopping site - easy to navigate and it keeps vital datasheet for each product online purchase.

Arth*****ardin

July 24, 2020

Heisener is awesome! Never any issues whatsoever. Product selection is good and delivery is on time.

Lis*****ills

July 22, 2020

Great item at a great price. Quick shipping. Nice seller. Rad transaction!

Leil*****Hurst

July 14, 2020

Awesome components selection and availability. Ordering process is easy. They don't spam me after the purchase.

Adel*****Sekhon

July 11, 2020

Worked as advertised and good price. Can you imagine buying these at local store it would cost way to much.

SUB75P03-07-E3 Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

SUB75P03-07-E3 Packaging

Verify Products
Customized Labels
Professional Packaging
Sealing
Packing
Insepction

SUB75P03-07-E3 Related Products

1812J6300122MXT 1812J6300122MXT Knowles Syfer, CAP CER 1200PF 630V X7R 1812, 1812 (4532 Metric), - View
CGA4J2X8R2A223K125AA CGA4J2X8R2A223K125AA TDK Corporation, CAP CER 0.022UF 100V X8R 0805, 0805 (2012 Metric), - View
IXTK8N150L IXTK8N150L IXYS, MOSFET N-CH 1500V 8A TO-264, TO-264-3, TO-264AA, - View
hotPCAL6416AEVJ PCAL6416AEVJ NXP, IC I/O EXPANDER 16BIT 24VFBGA, 24-VFBGA, - View
XQEROY-02-0000-000000M02 XQEROY-02-0000-000000M02 Cree Inc., LED XLAMP XQ-E 460NM ROY BLU SMD, 0606 (1616 Metric), - View
A3U-TMA-A2C-M A3U-TMA-A2C-M Omron Automation and Safety, SWITCH PUSHBUTTON DPDT 0.1A 30V, -, - View
RC0603JR-078M2L RC0603JR-078M2L Yageo, RES SMD 8.2M OHM 5% 1/10W 0603, 0603 (1608 Metric), - View
1780367 1780367 Phoenix Contact, TERM BLOCK HDR 10POS VERT 3.5MM, -, - View
ESQ-133-48-S-S-LL ESQ-133-48-S-S-LL Samtec Inc., ELEVATED SOCKET STRIPS, -, - View
951406-9010806-AR 951406-9010806-AR 3M, CONN HDR STR STACK 6POS 2MM T/H, -, - View
MP4-2F-1A-1Q-00 MP4-2F-1A-1Q-00 Artesyn Embedded Technologies, MP CONFIGURABLE POWER SUPPLY, -, - View
XC9302A502MR-G XC9302A502MR-G Torex Semiconductor Ltd, STEP-UP & STEP-DOWN 180KHZ DCDC, SC-74A, SOT-753, - View
Payment Methods
Delivery Services

Quick Inquiry

SUB75P03-07-E3

Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

Do you have any question about SUB75P03-07-E3?

0755-83210559 ext. 805 SalesDept@heisener.com heisener007 3008774228 Send Message

SUB75P03-07-E3 Tags

  • SUB75P03-07-E3
  • SUB75P03-07-E3 PDF
  • SUB75P03-07-E3 datasheet
  • SUB75P03-07-E3 specification
  • SUB75P03-07-E3 image
  • Vishay Siliconix
  • Vishay Siliconix SUB75P03-07-E3
  • buy SUB75P03-07-E3
  • SUB75P03-07-E3 price
  • SUB75P03-07-E3 distributor
  • SUB75P03-07-E3 supplier
  • SUB75P03-07-E3 wholesales

SUB75P03-07-E3 is Available in