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Nexperia USA Inc. |
DIODE SCHOTTKY SOD323F
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock2,896 |
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- | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
DIODE SCHOTTKY 30V 350MA SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 350mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10ns
- Current - Reverse Leakage @ Vr: 5µA @ 20V
- Capacitance @ Vr, F: 28pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SOD-123 |
Stock6,704 |
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30V | 350mA (DC) | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 5µA @ 20V | 28pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 1A SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 40V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: SOD-123 |
Stock7,200 |
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40V | 1A | 750mV @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 1mA @ 40V | 50pF @ 4V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AD, Axial |
Stock5,216 |
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60V | 5A | 650mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 50A B47
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: B-47
- Supplier Device Package: B-47
- Operating Temperature - Junction: -65°C ~ 195°C
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Package: B-47 |
Stock5,376 |
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200V | 50A | - | Standard Recovery >500ns, > 200mA (Io) | - | 5mA @ 200V | - | Chassis, Stud Mount | B-47 | B-47 | -65°C ~ 195°C |
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Micro Commercial Co |
DIODE SCHOTTKY 80V 1A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 80V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMBJ)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-214AA, SMB |
Stock2,080 |
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80V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 80V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMBJ) | -55°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 60V 3A POWERMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 630mV @ 3.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 60V
- Capacitance @ Vr, F: 130pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: Powermite
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-216AA |
Stock4,608 |
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60V | 3A | 630mV @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | 130pF @ 4V, 1MHz | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 20A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 15V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 410mV @ 19A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 15V
- Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,088 |
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15V | 20A | 410mV @ 19A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | 2000pF @ 5V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.5A DO220
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -
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Package: DO-220AA |
Stock5,808 |
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100V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 100V | - | Surface Mount | DO-220AA | DO-220AA (SMP) | - |
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STMicroelectronics |
DIODE GEN PURP 200V 12A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Insulated, TO-220AC
- Supplier Device Package: TO-220AC ins
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-220-2 Insulated, TO-220AC |
Stock13,968 |
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200V | 12A | 1.1V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.95V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Insulated, TO-220AC
- Supplier Device Package: TO-220AC ins
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: TO-220-2 Insulated, TO-220AC |
Stock4,880 |
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600V | 8A | 2.95V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | -40°C ~ 175°C |
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Micro Commercial Co |
DIODE RECT SCHTKY 60V 5A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 200pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock4,528 |
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60V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 200pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 200V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock62,400 |
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200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 400V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: 17pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock1,580,208 |
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400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 200MA EMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 470mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30µA @ 10V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: EMD2
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-79, SOD-523 |
Stock24,972,156 |
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30V | 200mA | 470mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 10V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 150°C (Max) |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 400V 3.8A SMPD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 3.8A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 25 µA @ 400 V
- Capacitance @ Vr, F: 150pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
- Supplier Device Package: SMPD
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock6,900 |
|
400 V | 3.8A | 1.2 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 25 µA @ 400 V | 150pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), Variant | SMPD | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 1A SOT23-3 3K
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 12 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 30 V
- Capacitance @ Vr, F: 175pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Operating Temperature - Junction: -40°C ~ 125°C
|
Package: - |
Request a Quote |
|
40 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 12 ns | 100 µA @ 30 V | 175pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -40°C ~ 125°C |
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Micro Commercial Co |
DIODE SCHOTTKY 45V 15A TO277
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock4,719 |
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45 V | 15A | 470 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 45 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277 | -55°C ~ 150°C |
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Infineon Technologies |
DUMMY 57
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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STMicroelectronics |
100 V, 8 A POWER SCHOTTKY TRENCH
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 695 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 17 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: 175°C
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Package: - |
Stock17,850 |
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100 V | 8A | 695 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 17 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | 175°C |
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Comchip Technology |
DIODE GEN PURP 300V 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 300 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
300 V | 1A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 300 V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
60 V | 3A | 750 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 100V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
100 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE GEN PURP 430V 20A TO220NFM
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 430 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 430 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220NFM
- Operating Temperature - Junction: 150°C
|
Package: - |
Stock2,952 |
|
430 V | 20A | 1.55 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 430 V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C |
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Panjit International Inc. |
DIODE GEN PURP 400V 10A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 400 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock6,000 |
|
400 V | 10A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 1 µA @ 400 V | 80pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 60V 4.6A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 4.6A
- Voltage - Forward (Vf) (Max) @ If: 660 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 35 µA @ 60 V
- Capacitance @ Vr, F: 2700pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock13,470 |
|
60 V | 4.6A | 660 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 35 µA @ 60 V | 2700pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 3A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Request a Quote |
|
30 V | 3A | 550 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Solid State Inc. |
DIODE GEN PURP 50V 25A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -
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Package: - |
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50 V | 25A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | - |