Diodes - Rectifiers - Single

CLS03(TE16L,SQC,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Capacitance @ Vr, F: 345pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: L-FLAT?
• Supplier Device Package: L-FLAT? (4x5.5)
• Operating Temperature - Junction: -40°C ~ 125°C

Package: L-FLAT?

UH6PDHM3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 6A TO277A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-277, 3-PowerDFN

SRP300D-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 28pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -50°C ~ 125°C

Package: DO-201AD, Axial

DSEP30-04A

IXYS

DIODE GEN PURP 400V 30A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.46V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 250µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-247-2

DZ540N26KS01

Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE MOD 2000V 1150A

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Package: -

1N4051R

Powerex Inc.

DIODE GEN PURP 500V 275A DO205AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 275A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 12mA @ 500V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -65°C ~ 190°C

Package: DO-205AB, DO-9, Stud

JANTXV1N6641

Microsemi Corporation

DIODE GEN PURP 50V 300MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 300mA
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: D, Axial
• Supplier Device Package: D-Pak
• Operating Temperature - Junction: -65°C ~ 175°C

Package: D, Axial

FR40D02

GeneSiC Semiconductor

DIODE GEN PURP 200V 40A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 40A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 25µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -40°C ~ 125°C

Package: DO-203AB, DO-5, Stud

MBRS4201PT3G

ON Semiconductor

DIODE SCHOTTKY 200V 4A SMC-2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 860mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 1mA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -55°C ~ 150°C

Package: DO-214AB, SMC

VS-6TQ040S-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 6A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 800µA @ 40V
• Capacitance @ Vr, F: 400pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2Pak)
• Operating Temperature - Junction: -55°C ~ 175°C

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

1N4151WS-G3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 150MA SOD323

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 150mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 50nA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: -55°C ~ 150°C

Package: SC-76, SOD-323

VS-30EPF12-M3

Vishay Semiconductor Diodes Division

DIODE SOFT FAST 30A TO-247

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AC Modified
• Operating Temperature - Junction: -40°C ~ 150°C

Package: TO-247-2

VS-15EWH06FN-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 36ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -65°C ~ 175°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

PMEG3020EJ,115

Nexperia USA Inc.

DIODE SCHOTTKY 30V 2A SOD323F

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 2A (DC)
• Voltage - Forward (Vf) (Max) @ If: 620mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Capacitance @ Vr, F: 72pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F
• Operating Temperature - Junction: 150°C (Max)

Package: SC-90, SOD-323F

DTH8R06D1-13

Diodes Incorporated

DIODE GP 600V 8A TO252 T&R 2.5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45 ns
• Current - Reverse Leakage @ Vr: 30 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (Type WX)
• Operating Temperature - Junction: -55°C ~ 150°C

Package: -

CDBQC54-HF

Comchip Technology

DIODE SCHOTTKY 30V 100MA 0402C

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 nA @ 10 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 0402 (1006 Metric)
• Supplier Device Package: 0402C/SOD-923F
• Operating Temperature - Junction: 125°C

Package: -

S30610

Microchip Technology

DIODE GEN PURP 100V 70A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5 µs
• Current - Reverse Leakage @ Vr: 50 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5 (DO-203AB)
• Operating Temperature - Junction: -55°C ~ 175°C

Package: -

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ES3GBH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 3A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 41pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

Package: -

FFSH2065ADN-F155

onsemi

DIODE SIL CARB 650V 13A TO247-3

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 13A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 200 µA @ 650 V
• Capacitance @ Vr, F: 575pF @ 1V, 100kHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• Operating Temperature - Junction: -55°C ~ 175°C

Package: -

S2GFL

Taiwan Semiconductor Corporation

2A, 400V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F
• Operating Temperature - Junction: -55°C ~ 150°C

Package: -

JAN1N6623US-TR

Microchip Technology

DIODE GEN PURP 880V 1A D-5A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 880 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 500 nA @ 880 V
• Capacitance @ Vr, F: 10pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A
• Operating Temperature - Junction: -65°C ~ 150°C

Package: -

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V15P6HM3_A-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 15A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3.6 mA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -40°C ~ 150°C

Package: -

HER106G-TP

Micro Commercial Co

DIODE GEN PURP 600V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 125°C

Package: -

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1N5804URS-TR

Microchip Technology

UFR,FRR

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 100 V
• Capacitance @ Vr, F: 25pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: A, SQ-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

Package: -

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SK59C

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 90V 5A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300 µA @ 90 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Package: -

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SL13A

Good-Ark Semiconductor

RECTIFIER, SCHOTTKY, 1A, 30V, DO

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 30 V
• Capacitance @ Vr, F: 85pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 125°C

Package: -

UES2604

Microchip Technology

DIODE GEN PURP 200V 30A TO204AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-204AD (TO-3)
• Operating Temperature - Junction: -55°C ~ 150°C

Package: -

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FR153GP-AP

Micro Commercial Co

DIODE GEN PURP 200V 1.5A DO15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -55°C ~ 150°C

Package: -

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FSQS05A065

KYOCERA AVX

DIODE SCHOT 65V 5A TO220 FM

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 65 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400 µA @ 65 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220-2 Full-Mold
• Operating Temperature - Junction: -40°C ~ 150°C

Package: -

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BYD13DBULK

EIC SEMICONDUCTOR INC.

DIODE AVALANCHE 200V 1.4A DO41

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1.4A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: 175°C

Package: -

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