Page 817 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
EGP10AE-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock6,352	-	-	-	-	-	-	-	-	-	-	-
GP10K-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock5,360	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 800V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
R5100215XXWA	Powerex Inc.	DIODE GEN PURP 200V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 470A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7µs Current - Reverse Leakage @ Vr: 30mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-205AA, DO-8, Stud	Stock6,784	200V	150A	1.4V @ 470A	Standard Recovery >500ns, > 200mA (Io)	7µs	30mA @ 200V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
PR1005L-T	Diodes Incorporated	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock3,328	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
MA2YD2300L	Panasonic Electronic Components	DIODE SCHOTTKY 25V 1A MINI2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: Mini2-F1 Operating Temperature - Junction: 125°C (Max)	Package: SOD-123F	Stock19,788	25V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	40µA @ 20V	-	Surface Mount	SOD-123F	Mini2-F1	125°C (Max)
1N5826R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 20V DO5 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 440mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-203AB, DO-5, Stud	Stock5,904	20V	15A	440mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 20V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
JAN1N3612	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: A, Axial	Stock5,088	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 300V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
MBR1660HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 16A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2	Stock5,408	60V	16A	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
VI20100SG-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 20A TO262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.07V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 350µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock9,756	100V	20A	1.07V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	350µA @ 100V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-40°C ~ 150°C
BYV98-150-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 150V 4A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	Package: SOD-64, Axial	Stock2,944	150V	4A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
SF65GHR0G	TSC America Inc.	DIODE, SUPER FAST, 6A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock2,816	300V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SBR10E45P5-13D	Diodes Incorporated	DIODE SBR 45V 10A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 470mV @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 280µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	Package: PowerDI? 5	Stock7,520	45V	10A	470mV @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	280µA @ 45V	-	Surface Mount	PowerDI? 5	PowerDI?5	-55°C ~ 150°C
RGP10ME-E3/91	Vishay Semiconductor Diodes Division	DIODE SW 1A 1000V 500NS DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock3,392	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
BYG24DHE3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.5A SMA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock3,520	200V	1.5A	1.25V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	1µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SSA24-M3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 2A 40V DO-214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AC, SMA	Stock3,024	40V	2A	490mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
SS26LHRHG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock4,784	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SD091SB150A.T	SMC Diode Solutions	PIV 150V IO 7.5A CHIP SIZE 90MIL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock6,912	-	-	-	-	-	-	-	-	-	-	-
DSA17-16A	IXYS	DIODE AVALANCHE 1.6KV 25A DO203 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -40°C ~ 180°C	Package: DO-203AA, DO-4, Stud	Stock5,664	1600V	25A	1.36V @ 55A	Standard Recovery >500ns, > 200mA (Io)	-	4mA @ 1600V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-40°C ~ 180°C
RF051VA2STR	Rohm Semiconductor	DIODE GEN PURP 200V 500MA TUMD2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 980mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2 Operating Temperature - Junction: 150°C (Max)	Package: 2-SMD, Flat Lead	Stock14,040	200V	500mA	980mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 200V	-	Surface Mount	2-SMD, Flat Lead	TUMD2	150°C (Max)
1SS404,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 300MA USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 300mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 20V Capacitance @ Vr, F: 46pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	Package: SC-76, SOD-323	Stock48,456	20V	300mA	450mV @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 20V	46pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
ES3F	Diotec Semiconductor	DIODE SUPERFAST SMC 300V 25NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	300 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 300 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-50°C ~ 150°C
S31110	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
VS-2ENH02HM3-85A	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 2A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 28 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	200 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	28 ns	2 µA @ 200 V	-	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
2CZ4004-RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	15pF @ 4V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
TUAU6MH	Taiwan Semiconductor Corporation	75NS, 6A, 1000V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 64pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock13,350	1000 V	6A	1.3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 1000 V	64pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	SMPC4.6U	-55°C ~ 175°C
V2NM63HM3-H	Vishay	2A, 60V, DFN3820A TRENCH SKY REC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 60 V Capacitance @ Vr, F: 350pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	60 V	2A	630 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 60 V	350pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 175°C
RBR3L30ADDTE25	Rohm Semiconductor	DIODE SCHOTTKY 30V 3A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	Package: -	Stock42	30 V	3A	580 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 30 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
S42140	Microchip Technology	DIODE GP 1.4KV 125A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 1400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	1400 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1400 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
BYG20GH	Taiwan Semiconductor Corporation	75NS, 1.5A, 400V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock45,000	400 V	1.5A	1.4 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	1 µA @ 400 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SF18-T-B	MDD	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C

EGP10AE-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Package: -

Stock6,352

-

GP10K-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

Package: DO-204AL, DO-41, Axial

Stock5,360

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 800V

7pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

R5100215XXWA

Powerex Inc.

DIODE GEN PURP 200V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 470A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7µs
Current - Reverse Leakage @ Vr: 30mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

Package: DO-205AA, DO-8, Stud

Stock6,784

200V

150A

1.4V @ 470A

Standard Recovery >500ns, > 200mA (Io)

7µs

30mA @ 200V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

PR1005L-T

Diodes Incorporated

DIODE GEN PURP 600V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

Package: DO-204AL, DO-41, Axial

Stock3,328

600V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

MA2YD2300L

Panasonic Electronic Components

DIODE SCHOTTKY 25V 1A MINI2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: Mini2-F1
Operating Temperature - Junction: 125°C (Max)

Package: SOD-123F

Stock19,788

25V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

40µA @ 20V

-

Surface Mount

SOD-123F

Mini2-F1

125°C (Max)

1N5826R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 20V DO5

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 440mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

Package: DO-203AB, DO-5, Stud

Stock5,904

20V

15A

440mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

10mA @ 20V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

JAN1N3612

Microsemi Corporation

DIODE GEN PURP 400V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Package: A, Axial

Stock5,088

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 300V

-

Through Hole

A, Axial

-

-65°C ~ 175°C

MBR1660HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

Package: TO-220-2

Stock5,408

60V

16A

750mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

VI20100SG-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 20A TO262AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.07V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 350µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -40°C ~ 150°C

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock9,756

100V

20A

1.07V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

350µA @ 100V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262AA

-40°C ~ 150°C

BYV98-150-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 150V 4A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

Package: SOD-64, Axial

Stock2,944

150V

4A

1.1V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 150V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

SF65GHR0G

TSC America Inc.

DIODE, SUPER FAST, 6A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

Package: DO-201AD, Axial

Stock2,816

300V

6A

1.3V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 300V

50pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SBR10E45P5-13D

Diodes Incorporated

DIODE SBR 45V 10A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 280µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -55°C ~ 150°C

Package: PowerDI? 5

Stock7,520

45V

10A

470mV @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

280µA @ 45V

-

Surface Mount

PowerDI? 5

PowerDI?5

-55°C ~ 150°C

RGP10ME-E3/91

Vishay Semiconductor Diodes Division

DIODE SW 1A 1000V 500NS DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

Package: DO-204AL, DO-41, Axial

Stock3,392

1000V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 1000V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

BYG24DHE3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A SMA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

Package: DO-214AC, SMA

Stock3,520

200V

1.5A

1.25V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

1µA @ 200V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SSA24-M3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 2A 40V DO-214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C

Package: DO-214AC, SMA

Stock3,024

40V

2A

490mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 40V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 150°C

SS26LHRHG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

Package: DO-219AB

Stock4,784

60V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 60V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

SD091SB150A.T

SMC Diode Solutions

PIV 150V IO 7.5A CHIP SIZE 90MIL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Package: -

Stock6,912

-

DSA17-16A

IXYS

DIODE AVALANCHE 1.6KV 25A DO203

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -40°C ~ 180°C

Package: DO-203AA, DO-4, Stud

Stock5,664

1600V

25A

1.36V @ 55A

Standard Recovery >500ns, > 200mA (Io)

-

4mA @ 1600V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-40°C ~ 180°C

RF051VA2STR

Rohm Semiconductor

DIODE GEN PURP 200V 500MA TUMD2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 980mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2
Operating Temperature - Junction: 150°C (Max)

Package: 2-SMD, Flat Lead

Stock14,040

200V

500mA

980mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 200V

-

Surface Mount

2-SMD, Flat Lead

TUMD2

150°C (Max)

1SS404,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 300MA USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 450mV @ 300mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 20V
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

Package: SC-76, SOD-323

Stock48,456

20V

300mA

450mV @ 300mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 20V

46pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

125°C (Max)

ES3F

Diotec Semiconductor

DIODE SUPERFAST SMC 300V 25NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -50°C ~ 150°C

Package: -

Request a Quote

300 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

5 µA @ 300 V

-

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-50°C ~ 150°C

S31110

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Package: -

Request a Quote

-

VS-2ENH02HM3-85A

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 2A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

Package: -

Request a Quote

200 V

2A

1 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

28 ns

2 µA @ 200 V

-

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

2CZ4004-RHG

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

Package: -

Request a Quote

400 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 600 V

15pF @ 4V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

TUAU6MH

Taiwan Semiconductor Corporation

75NS, 6A, 1000V, HIGH EFFICIENT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 64pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C

Package: -

Stock13,350

1000 V

6A

1.3 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 1000 V

64pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

SMPC4.6U

-55°C ~ 175°C

V2NM63HM3-H

Vishay

2A, 60V, DFN3820A TRENCH SKY REC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Capacitance @ Vr, F: 350pF @ 4V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C

Package: -

Request a Quote

60 V

2A

630 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 60 V

350pF @ 4V, 1MHz

Surface Mount, Wettable Flank

2-VDFN

DFN3820A

-40°C ~ 175°C

RBR3L30ADDTE25

Rohm Semiconductor

DIODE SCHOTTKY 30V 3A PMDS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

Package: -

Stock42

30 V

3A

580 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 30 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C

S42140

Microchip Technology

DIODE GP 1.4KV 125A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400 V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 1400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

Package: -

Request a Quote

1400 V

125A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 1400 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

BYG20GH

Taiwan Semiconductor Corporation

75NS, 1.5A, 400V, HIGH EFFICIENT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

Package: -

Stock45,000

400 V

1.5A

1.4 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

1 µA @ 400 V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SF18-T-B

MDD

DIODE GEN PURP 600V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

Package: -

Request a Quote

600 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 600 V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C