Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 800V 6A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,336 |
|
MOSFET (Metal Oxide) | 800V | 6A (Ta) | 10V | 3.9V @ 250µA | 41nC @ 10V | 785pF @ 100V | ±20V | - | 83W (Tc) | 900 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 4.6A SOT223
|
Package: TO-261-4, TO-261AA |
Stock559,200 |
|
MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 50nC @ 10V | 840pF @ 25V | ±16V | - | 1W (Ta) | 31 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 30V 42A TO252
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock42,876 |
|
MOSFET (Metal Oxide) | 30V | 42A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 100nC @ 10V | 3535pF @ 15V | ±20V | - | 2.5W (Ta), 73.5W (Tc) | 3.9 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 85V 80A ISOPLUS220
|
Package: ISOPLUS220? |
Stock7,104 |
|
MOSFET (Metal Oxide) | 85V | 80A (Tc) | 10V | 4V @ 4mA | 180nC @ 10V | 4800pF @ 25V | ±20V | - | 230W (Tc) | 11 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
STMicroelectronics |
MOSFET N-CH 30V 80A IPAK
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock84,252 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 5V, 10V | 1V @ 250µA | 32nC @ 5V | 2805pF @ 25V | ±20V | - | 95W (Tc) | 5.7 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 600V 13.5A TO-247
|
Package: TO-247-3 |
Stock3,856 |
|
MOSFET (Metal Oxide) | 600V | 13.5A (Tc) | 10V | 4.5V @ 100µA | 75nC @ 10V | 2220pF @ 25V | ±30V | - | 160W (Tc) | 500 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 8.7A TO252
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,832 |
|
MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 4.5V @ 340µA | 32nC @ 10V | 870pF @ 100V | ±20V | - | 83.3W (Tc) | 420 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 45A TO263-3
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,712 |
|
MOSFET (Metal Oxide) | 60V | 45A (Tc) | 10V | 4V @ 34µA | 47nC @ 10V | 3785pF @ 25V | ±20V | - | 71W (Tc) | 9.4 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 100V 17A TO220FP
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock4,896 |
|
MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 5V | 2V @ 250µA | 64nC @ 5V | 2200pF @ 25V | ±10V | - | 48W (Tc) | 77 mOhm @ 10A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Nexperia USA Inc. |
MOSFET N-CH 100V 23.4A TO220F
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,312 |
|
MOSFET (Metal Oxide) | 100V | 23.4A (Tc) | 10V | 4V @ 250µA | 30nC @ 10V | 1624pF @ 50V | ±20V | - | 41.1W (Tc) | 26.8 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 34A 8SOP-ADV
|
Package: 8-PowerVDFN |
Stock4,400 |
|
MOSFET (Metal Oxide) | 30V | 34A (Ta) | 4.5V, 10V | 2V @ 500µA | 115nC @ 10V | 4800pF @ 10V | +20V, -25V | - | 1.6W (Ta), 45W (Tc) | 4.8 mOhm @ 17A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
|
Package: 8-PowerSMD, Flat Leads |
Stock17,760 |
|
MOSFET (Metal Oxide) | 30V | 36A (Ta), 85A (Tc) | 4.5V, 10V | 2V @ 250µA | 65nC @ 10V | 3290pF @ 15V | ±12V | - | 6.2W (Ta), 48W (Tc) | 3.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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IXYS |
MOSFET N-CH 650V 12A TO-220
|
Package: TO-220-3 |
Stock5,344 |
|
MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 5V @ 250µA | 17nC @ 10V | 1100pF @ 25V | ±30V | - | 180W (Tc) | 300 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 22A TO-220
|
Package: TO-220-3 |
Stock4,832 |
|
MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 4V @ 250µA | 45nC @ 10V | 1950pF @ 100V | ±45V | - | 205W (Tc) | 165 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 13A 8DFN
|
Package: 8-PowerSMD, Flat Leads |
Stock11,064 |
|
MOSFET (Metal Oxide) | 60V | 13A (Ta), 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 40nC @ 10V | 3420pF @ 30V | ±20V | - | 2.3W (Ta), 83W (Tc) | 6.4 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH 30V 3.9A SOT223
|
Package: TO-261-4, TO-261AA |
Stock16,548 |
|
MOSFET (Metal Oxide) | 30V | 3.9A (Ta) | 4V, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | ±16V | - | 1W (Ta) | 45 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 25A TO-247
|
Package: TO-247-3 |
Stock72,000 |
|
MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 4V @ 250µA | 74nC @ 10V | 3352pF @ 100V | ±30V | - | 216W (Tc) | 126 mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 77A TO-220F
|
Package: TO-220-3 Full Pack |
Stock7,744 |
|
MOSFET (Metal Oxide) | 60V | 77A (Tc) | 10V | 4V @ 250µA | 69nC @ 10V | 5690pF @ 30V | ±20V | - | 44.1W (Tc) | 4.1 mOhm @ 77A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N CH 200V 30A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock22,728 |
|
MOSFET (Metal Oxide) | 200V | 30A (Tc) | 5V | 3V @ 250µA | 65nC @ 10V | 1990pF @ 25V | ±20V | - | 150W (Tc) | 75 mOhm @ 15A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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onsemi |
MOSFET N-CH 80V 11A/51A POWER33
|
Package: - |
Stock7,200 |
|
MOSFET (Metal Oxide) | 80 V | 11A (Ta), 51A (Tc) | 6V, 10V | 4V @ 90µA | 22 nC @ 10 V | 1500 pF @ 40 V | ±20V | - | 2.4W (Ta), 52W (Tc) | 10mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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onsemi |
TRENCH 6 30V NCH
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 11.9A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 30 nC @ 10 V | 1972 pF @ 15 V | ±20V | - | 770mW (Ta) | 2.8mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Microchip Technology |
RH MOSFET 200V SMD 2.0
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 650V 34.6A TO247-3
|
Package: - |
Stock582 |
|
MOSFET (Metal Oxide) | 650 V | 34.6A (Tc) | 10V | 3.9V @ 1.9mA | 200 nC @ 10 V | 4500 pF @ 25 V | ±20V | - | 313W (Tc) | 100mOhm @ 21.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 530MA 3DFN
|
Package: - |
Stock92,553 |
|
MOSFET (Metal Oxide) | 20 V | 530mA (Ta) | 1.5V, 4.5V | 1V @ 250µA | 0.4 nC @ 4.5 V | 28.7 pF @ 15 V | ±8V | - | 820mW (Ta) | 1.9Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0604-3 | 3-XFDFN |
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Taiwan Semiconductor Corporation |
-60V, -20A, SINGLE P-CHANNEL POW
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 22.4 nC @ 10 V | 1250 pF @ 30 V | ±20V | - | - | 48mOhm @ 8A, 10V | -50°C ~ 150°C (TJ) | Through Hole | TO-251S (IPAK SL) | TO-251-3 Stub Leads, IPAK |
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Toshiba Semiconductor and Storage |
UMOS10 DPAK 80V 5.1MOHM
|
Package: - |
Stock46,704 |
|
MOSFET (Metal Oxide) | 80 V | 84A (Tc) | 6V, 10V | 3.5V @ 700µA | 56 nC @ 10 V | 3980 pF @ 40 V | ±20V | - | 104W (Tc) | 5.1mOhm @ 42A, 10V | 175°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
International Rectifier |
N-CHANNEL HERMETIC MOS HEXFET
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 250 V | 8.4A | - | - | - | - | - | - | 74W | - | - | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 100A PPAK SO-8
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 204 nC @ 10 V | 10500 pF @ 20 V | +20V, -16V | - | 104W (Tc) | 0.88mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Rohm Semiconductor |
NCH 100V 70A, TO-220AB, POWER MO
|
Package: - |
Stock2,985 |
|
MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 6V, 10V | 4V @ 1mA | 38 nC @ 10 V | 2410 pF @ 50 V | ±20V | - | 89W (Tc) | 8.4mOhm @ 70A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 250V 240A SOT227B
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 250 V | 240A (Tc) | 10V | 4.5V @ 8mA | 345 nC @ 10 V | 23800 pF @ 25 V | ±20V | - | 695W (Tc) | 4.5mOhm @ 120A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |