Page 68 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPU105N03L G
Infineon Technologies

MOSFET N-CH 30V 35A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,544
IRF6626TRPBF
Infineon Technologies

MOSFET N-CH 30V 16A DIRECTFET

Package: DirectFET? Isometric ST

Stock6,304
RJK5013DPE-00#J3
Renesas Electronics America

MOSFET N-CH 500V 14A LDPAK

Package: SC-83

Stock4,736
FQPF12P10
Fairchild/ON Semiconductor

MOSFET P-CH 100V 8.2A TO-220F

Package: TO-220-3 Full Pack

Stock9,672
FQP630
Fairchild/ON Semiconductor

MOSFET N-CH 200V 9A TO-220

Package: TO-220-3

Stock103,464
ZVN2106ASTOA
Diodes Incorporated

MOSFET N-CH 60V 0.45A TO92-3

Package: E-Line-3

Stock3,504
STK850
STMicroelectronics

MOSFET N-CH 30V 30A POLARPAK

Package: PolarPak?

Stock215,316
STF12PF06
STMicroelectronics

MOSFET P-CH 60V 8A TO-220FP

Package: TO-220-3 Full Pack

Stock450,168
FCH47N60N
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-247

Package: TO-247-3

Stock105,636
SI4634DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 24.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,790,628
NTMFS4C024NT1G
ON Semiconductor

MOSFET N-CH 30V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock5,328
NDD03N40ZT4G
ON Semiconductor

MOSFET N-CH 400V 2.1A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,536
STL220N6F7
STMicroelectronics

MOSFET N-CH 60V 260A POWERFLAT

Package: 8-PowerVDFN

Stock6,864
SIR826DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 60A PPAK SO-8

Package: PowerPAK? SO-8

Stock4,896
CSD17306Q5A
Texas Instruments

MOSFET N-CH 30V 100A 8SON

Package: 8-PowerTDFN

Stock6,288
TK560A65Y,S4X
Toshiba Semiconductor and Storage

MOSFET TRANSISTOR TO-220SIS PD

Package: TO-220-3 Full Pack

Stock7,536
BSC0901NS
Infineon Technologies

MOSFET N-CH 30V 100A 8TDSON

Package: 8-PowerTDFN

Stock97,428
SI3407-TP
Micro Commercial Co

P-CHANNEL MOSFET, SOT-23 PACKAGE

Package: TO-236-3, SC-59, SOT-23-3

Stock3,344
SPB21N50C3
Infineon Technologies

MOSFET N-CH 560V 21A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock468,204
STP360N4F6
STMicroelectronics

MOSFET N-CH 40V TO-220

Package: TO-220-3

Stock6,880

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPU105N03L G	Infineon Technologies	MOSFET N-CH 30V 35A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,544	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	2.2V @ 250µA	14nC @ 10V	1500pF @ 15V	±20V	-	38W (Tc)	10.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IRF6626TRPBF	Infineon Technologies	MOSFET N-CH 30V 16A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 16A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? ST Package / Case: DirectFET? Isometric ST	Package: DirectFET? Isometric ST	Stock6,304	MOSFET (Metal Oxide)	30V	16A (Ta), 72A (Tc)	4.5V, 10V	2.35V @ 250µA	29nC @ 4.5V	2380pF @ 15V	±20V	-	2.2W (Ta), 42W (Tc)	5.4 mOhm @ 16A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST	DirectFET? Isometric ST
RJK5013DPE-00#J3	Renesas Electronics America	MOSFET N-CH 500V 14A LDPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 465 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LDPAK Package / Case: SC-83	Package: SC-83	Stock4,736	MOSFET (Metal Oxide)	500V	14A (Ta)	10V	-	38nC @ 10V	1450pF @ 25V	±30V	-	100W (Tc)	465 mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	4-LDPAK	SC-83
FQPF12P10	Fairchild/ON Semiconductor	MOSFET P-CH 100V 8.2A TO-220F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock9,672	MOSFET (Metal Oxide)	100V	8.2A (Tc)	10V	4V @ 250µA	27nC @ 10V	800pF @ 25V	±30V	-	38W (Tc)	290 mOhm @ 4.1A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQP630	Fairchild/ON Semiconductor	MOSFET N-CH 200V 9A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	200V	9A (Tc)	10V	4V @ 250µA	25nC @ 10V	550pF @ 25V	±25V	-	78W (Tc)	400 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
ZVN2106ASTOA	Diodes Incorporated	MOSFET N-CH 60V 0.45A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock3,504	MOSFET (Metal Oxide)	60V	450mA (Ta)	10V	2.4V @ 1mA	-	75pF @ 18V	±20V	-	700mW (Ta)	2 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
STK850	STMicroelectronics	MOSFET N-CH 30V 30A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 5.2W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PolarPak? Package / Case: PolarPak?	Package: PolarPak?	Stock215,316	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	32.5nC @ 4.5V	3150pF @ 25V	±16V	-	5.2W (Tc)	2.9 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PolarPak?	PolarPak?
STF12PF06	STMicroelectronics	MOSFET P-CH 60V 8A TO-220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock450,168	MOSFET (Metal Oxide)	60V	8A (Tc)	10V	4V @ 250µA	21nC @ 10V	850pF @ 25V	±20V	-	225W (Tc)	200 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
FCH47N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V 47A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 368W (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 23.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock105,636	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	4V @ 250µA	151nC @ 10V	6700pF @ 100V	±30V	-	368W (Tc)	62 mOhm @ 23.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SI4634DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 24.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,790,628	MOSFET (Metal Oxide)	30V	24.5A (Tc)	4.5V, 10V	2.6V @ 250µA	68nC @ 10V	3150pF @ 15V	±20V	-	2.5W (Ta), 5.7W (Tc)	5.2 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTMFS4C024NT1G	ON Semiconductor	MOSFET N-CH 30V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21.7A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.57W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,328	MOSFET (Metal Oxide)	30V	21.7A (Ta), 78A (Tc)	4.5V, 10V	2.2V @ 250µA	30nC @ 10V	1972pF @ 15V	±20V	-	2.57W (Ta), 33W (Tc)	2.8 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NDD03N40ZT4G	ON Semiconductor	MOSFET N-CH 400V 2.1A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 600mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,536	MOSFET (Metal Oxide)	400V	2.1A (Tc)	10V	4.5V @ 50µA	6.6nC @ 10V	140pF @ 50V	±30V	-	37W (Tc)	3.4 Ohm @ 600mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL220N6F7	STMicroelectronics	MOSFET N-CH 60V 260A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 187W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFLAT (6x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,864	MOSFET (Metal Oxide)	60V	260A (Tc)	10V	4V @ 250µA	100nC @ 10V	6600pF @ 25V	±20V	-	4.8W (Ta), 187W (Tc)	1.4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFLAT (6x5)	8-PowerVDFN
SIR826DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 80V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock4,896	MOSFET (Metal Oxide)	80V	60A (Tc)	4.5V, 10V	2.8V @ 250µA	90nC @ 10V	2900pF @ 40V	±20V	-	6.25W (Ta), 104W (Tc)	4.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
CSD17306Q5A	Texas Instruments	MOSFET N-CH 30V 100A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 15V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 3.2W (Ta) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 22A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,288	MOSFET (Metal Oxide)	30V	24A (Ta), 100A (Tc)	3V, 8V	1.6V @ 250µA	15.3nC @ 4.5V	2170pF @ 15V	+10V, -8V	-	3.2W (Ta)	3.7 mOhm @ 22A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
TK560A65Y,S4X	Toshiba Semiconductor and Storage	MOSFET TRANSISTOR TO-220SIS PD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,536	MOSFET (Metal Oxide)	650V	7A (Tc)	10V	4V @ 240µA	14.5nC @ 10V	380pF @ 300V	±30V	-	30W	560 mOhm @ 3.5A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
BSC0901NS	Infineon Technologies	MOSFET N-CH 30V 100A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock97,428	MOSFET (Metal Oxide)	30V	28A (Ta), 100A (Tc)	4.5V, 10V	2.2V @ 250µA	44nC @ 10V	2800pF @ 15V	±20V	-	2.5W (Ta), 69W (Tc)	1.9 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
SI3407-TP	Micro Commercial Co	P-CHANNEL MOSFET, SOT-23 PACKAGE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.1A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW Rds On (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,344	MOSFET (Metal Oxide)	30V	4.1A	10V	3V @ 250µA	-	700pF @ 15V	±20V	-	350mW	87 mOhm @ 2.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SPB21N50C3	Infineon Technologies	MOSFET N-CH 560V 21A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock468,204	MOSFET (Metal Oxide)	560V	21A (Tc)	10V	3.9V @ 1mA	95nC @ 10V	2400pF @ 25V	±20V	-	208W (Tc)	190 mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP360N4F6	STMicroelectronics	MOSFET N-CH 40V TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17930pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,880	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4.5V @ 250µA	340nC @ 10V	17930pF @ 25V	±20V	-	300W (Tc)	1.8 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
CPH3462-TL-W	ON Semiconductor	MOSFET N-CH 100V 1A CPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 785 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock24,582	MOSFET (Metal Oxide)	100V	1A (Ta)	4V, 10V	2.6V @ 1mA	3.4nC @ 10V	155pF @ 20V	±20V	-	1W (Ta)	785 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3
2V7002LT3G	ON Semiconductor	MOSFET N-CH 60V .115A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock120,012	MOSFET (Metal Oxide)	60V	115mA (Tc)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±20V	-	225mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IQD005N04NM6ATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1.449mA Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-U04 Package / Case: 8-PowerTDFN	Package: -	Stock15,048	MOSFET (Metal Oxide)	40 V	58A (Ta), 610A (Tc)	6V, 10V	2.8V @ 1.449mA	163 nC @ 10 V	12000 pF @ 20 V	±20V	-	3W (Ta), 333W (Tc)	0.47mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-U04	8-PowerTDFN
TSM7ND65CI	Taiwan Semiconductor Corporation	MOSFET N-CH 650V 7A ITO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1124 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Stock9	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	3.8V @ 250µA	25 nC @ 10 V	1124 pF @ 50 V	±30V	-	50W (Tc)	1.35Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
NVH4L015N065SC1	onsemi	SIC MOS TO247-4L 650V FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 142A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.3V @ 25mA Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V Vgs (Max): +22V, -8V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock1,230	SiCFET (Silicon Carbide)	650 V	142A (Tc)	15V, 18V	4.3V @ 25mA	283 nC @ 18 V	4790 pF @ 325 V	+22V, -8V	-	500W (Tc)	18mOhm @ 75A, 18V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
IPN95R1K2P7ATMA1	Infineon Technologies	MOSFET N-CH 950V 6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock9,537	MOSFET (Metal Oxide)	950 V	6A (Tc)	10V	3.5V @ 140µA	15 nC @ 10 V	478 pF @ 400 V	±20V	-	7W (Tc)	1.2Ohm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
IRFH5015TR2PBF	Infineon Technologies	MOSFET N-CH 150V 10A 8VQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	10A (Ta), 56A (Tc)	-	5V @ 150µA	50 nC @ 10 V	2300 pF @ 50 V	-	-	-	31mOhm @ 34A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
TSM1NB60LCW-RPG	Taiwan Semiconductor Corporation	600V, 0.55A, SINGLE N-CHANNEL PO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), 550mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 10.4W (Tc) Rds On (Max) @ Id, Vgs: 15Ohm @ 270mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock15,000	MOSFET (Metal Oxide)	600 V	230mA (Ta), 550mA (Tc)	10V	2V @ 250µA	7.5 nC @ 10 V	98 pF @ 300 V	±30V	-	10.4W (Tc)	15Ohm @ 270mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA