Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 20V 37A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock23,832 |
|
MOSFET (Metal Oxide) | 20V | 37A (Tc) | 4.5V, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | 560pF @ 10V | ±20V | - | 35W (Tc) | 15 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 86A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock369,120 |
|
MOSFET (Metal Oxide) | 30V | 86A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2330pF @ 15V | ±20V | - | 79W (Tc) | 6.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
Package: TO-220-3 Full Pack |
Stock2,048 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 18A
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,496 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta), 46A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 33nC @ 10V | 1229pF @ 15V | ±20V | - | 2.5W (Ta), 50W (Tc) | 5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
NXP |
MOSFET N-CH 20V 3.2A SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock141,612 |
|
MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 7.4nC @ 4.5V | 420pF @ 15V | ±12V | - | 380mW (Ta) | 35 mOhm @ 3.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET P-CH 8V 4.4A 6-TSOP
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock494,556 |
|
MOSFET (Metal Oxide) | 8V | 4.4A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 19nC @ 4.5V | - | ±8V | - | 1.1W (Ta) | 42 mOhm @ 5.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
NXP |
MOSFET N-CH 55V 28.43A LFPAK
|
Package: SC-100, SOT-669 |
Stock2,816 |
|
MOSFET (Metal Oxide) | 55V | 28.43A (Tc) | 10V | 4V @ 1mA | 13.1nC @ 10V | 781pF @ 25V | ±20V | - | 60W (Tc) | 35 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
IXYS |
MOSFET N-CH 75V 55A TO-252
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,344 |
|
MOSFET (Metal Oxide) | 75V | 55A (Tc) | 10V | 4V @ 25µA | 33nC @ 10V | 1400pF @ 25V | ±20V | - | 130W (Tc) | 19.5 mOhm @ 27.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 300V 15A TO-3P
|
Package: TO-3P-3, SC-65-3 |
Stock28,740 |
|
MOSFET (Metal Oxide) | 300V | 15A (Tc) | 10V | 5V @ 250µA | 40nC @ 10V | 1360pF @ 25V | ±30V | - | 160W (Tc) | 290 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Diodes Incorporated |
MOSFET N-CH 200V 0.12A TO92-3
|
Package: E-Line-3 |
Stock5,440 |
|
MOSFET (Metal Oxide) | 200V | 120mA (Ta) | 2.6V, 5V | - | - | - | ±20V | - | 500mW (Ta) | 30 Ohm @ 100mA, 5V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 61A TO-220AB
|
Package: TO-220-3 |
Stock649,968 |
|
MOSFET (Metal Oxide) | 100V | 9A (Ta), 61A (Tc) | 6V, 10V | 4V @ 250µA | 53nC @ 10V | 2880pF @ 25V | ±20V | - | 150W (Tc) | 16 mOhm @ 61A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 4.5A TO-220
|
Package: TO-220-3 |
Stock9,828 |
|
MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 670pF @ 25V | ±30V | - | 100W (Tc) | 2.5 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 40V 14.4A PWDI3333-8
|
Package: 8-PowerWDFN |
Stock2,224 |
|
MOSFET (Metal Oxide) | 40V | 14.4A (Ta) | 3.3V, 10V | 3V @ 250µA | 74nC @ 10V | 3537pF @ 20V | ±20V | - | 1W (Ta) | 7.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 25V 30V U-DFN2020-
|
Package: 6-UDFN Exposed Pad |
Stock2,960 |
|
MOSFET (Metal Oxide) | 30V | 10.3A (Ta) | 4V, 10V | 3V @ 250µA | 19.6nC @ 10V | 1204pF @ 15V | ±25V | - | 2W (Ta) | 19 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V TO-247-3
|
Package: TO-247-3 |
Stock134,328 |
|
MOSFET (Metal Oxide) | 150V | 158A (Tc) | 10V | 4V @ 250µA | 92nC @ 10V | 9445pF @ 75V | ±20V | - | 429W (Tc) | 5.9 mOhm @ 120A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 3.6A 1212-8
|
Package: PowerPAK? 1212-8 |
Stock656,856 |
|
MOSFET (Metal Oxide) | 60V | 3.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 25nC @ 10V | - | ±20V | - | 1.5W (Ta) | 65 mOhm @ 5.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
IXYS |
MOSFET N-CH 650V 20A TO-263
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,024 |
|
MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 5.5V @ 250µA | 35nC @ 10V | 1390pF @ 25V | ±30V | - | 320W (Tc) | 210 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET P-CH 30V 3.8A 8SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock90,000 |
|
MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 5.2nC @ 4.5V | 563pF @ 25V | ±20V | - | 1.3W (Ta) | 70 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 650V 7.3A TO252
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock46,410 |
|
MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 600 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Goford Semiconductor |
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
|
Package: - |
Stock2,124 |
|
MOSFET (Metal Oxide) | 120 V | 70A (Tc) | 10V | 4V @ 250µA | 50 nC @ 10 V | 3050 pF @ 60 V | ±20V | - | 100W (Tc) | 10mOhm @ 35A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
MOSFET N-CH 100V 12.4A/60A 8PQFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 12.4A (Ta), 60A (Tc) | 6V, 10V | 4V @ 250µA | 55 nC @ 10 V | 3000 pF @ 50 V | ±20V | - | 2.5W (Ta), 104W (Tc) | 8mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
||
Taiwan Semiconductor Corporation |
600V, 8A, SINGLE N-CHANNEL POWER
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 10V | 4V @ 250µA | 16 nC @ 10 V | 528 pF @ 100 V | ±30V | - | 41.7W (Tc) | 600mOhm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Rohm Semiconductor |
600V 9A TO-220FM, FAST SWITCHING
|
Package: - |
Stock3,204 |
|
MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V, 12V | 6V @ 1.4mA | 20 nC @ 10 V | 890 pF @ 100 V | ±30V | - | 54W (Tc) | 260mOhm @ 5A, 12V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET_)40V 60V)
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 310A (Tj) | 7V, 10V | 3.4V @ 130µA | 137 nC @ 10 V | 9822 pF @ 30 V | ±20V | - | 188W (Tc) | 1.12mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-53 | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET N-CH 60V 15.9/45.4A PWRDI
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 15.9A (Ta), 45.4A (Tc) | 4.5V, 10V | 3V @ 250µA | 33.5 nC @ 10 V | 1925 pF @ 30 V | ±16V | - | 3.6W (Ta), 29.4W (Tc) | 9.5mOhm @ 13.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 600V 20.2A TO247-3
|
Package: - |
Stock492 |
|
MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 4.5V @ 630µ | 11 nC @ 10 V | 1750 pF @ 100 V | ±20V | - | 151W (Tc) | 190mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
YAGEO XSEMI |
MOSFET N-CH 60V 75A TO252
|
Package: - |
Stock3,000 |
|
MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 4V @ 250µA | 112 nC @ 10 V | 6520 pF @ 50 V | ±20V | - | 2W (Ta), 83.3W (Tc) | 3mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Sanyo |
2SK3815 - N-CHANNEL, MOSFET
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 100V 13A/71A TDSON
|
Package: - |
Stock22,278 |
|
MOSFET (Metal Oxide) | 100 V | 13A (Ta), 71A (Tc) | 4.5V, 10V | 2.3V @ 40µA | 33 nC @ 10 V | 2200 pF @ 50 V | ±20V | - | 2.5W (Ta), 74W (Tc) | 7.8mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-46 | 8-PowerTDFN |
||
Transphorm |
GANFET N-CH 650V 46.5A TO247-3
|
Package: - |
Stock2,493 |
|
GaNFET (Cascode Gallium Nitride FET) | 650 V | 46.5A (Tc) | 12V | 4.8V @ 1mA | 36 nC @ 10 V | 1500 pF @ 400 V | ±20V | - | 156W (Tc) | 41mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |