Page 982 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI80N06S208AKSA1
Infineon Technologies

MOSFET N-CH 55V 80A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,064
SPP04N60C3HKSA1
Infineon Technologies

MOSFET N-CH 650V 4.5A TO-220AB

Package: TO-220-3

Stock5,872
BUK9E2R3-40E,127
NXP

MOSFET N-CH 40V 120A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,672
NTD4909N-35G
ON Semiconductor

MOSFET N-CH 30V 41A SGL IPAK

Package: TO-251-3 Stub Leads, IPak

Stock61,212
FDMB506P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 6.8A 8MICROFET

Package: 8-PowerWDFN

Stock3,296
FDU6296
Fairchild/ON Semiconductor

MOSFET N-CH 30V 15A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,568
FDS7296N3
Fairchild/ON Semiconductor

MOSFET N-CH 30V 15A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock705,444
IRF740L
Vishay Siliconix

MOSFET N-CH 400V 10A TO-220AB

Package: TO-220-3

Stock7,968
IPC60R070C6X1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

Package: -

Stock7,328
IXTH60N25
IXYS

MOSFET N-CH 250V 60A TO-247

Package: TO-247-3

Stock390,000
DKI04077
Sanken

MOSFET N-CH 40V 47A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,264
CSD19532Q5B
Texas Instruments

MOSFET N-CH 100V 100A 8SON

Package: 8-PowerTDFN

Stock7,056
BSH203,215
Nexperia USA Inc.

MOSFET P-CH 30V 470MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,072
STF6N65M2
STMicroelectronics

MOSFET N-CH 650V 4A TO-220FP

Package: TO-220-3 Full Pack

Stock6,640
IRL40SC209
Infineon Technologies

MOSFET N-CH 40V 478A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock5,616
VP0808L-G
Microchip Technology

MOSFET P-CH 80V 0.28A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock15,396
MTP3055VL
Fairchild/ON Semiconductor

MOSFET N-CH 60V 12A TO-220

Package: TO-220-3

Stock186,036
IPA023N04NM3SXKSA1
Infineon Technologies

TRENCH <= 40V

Package: -

Request a Quote
DMN34D0U-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

Package: -

Request a Quote
IPT054N15N5ATMA1
Infineon Technologies

TRENCH >=100V PG-HSOF-8

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI80N06S208AKSA1	Infineon Technologies	MOSFET N-CH 55V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,064	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 150µA	96nC @ 10V	2860pF @ 25V	±20V	-	215W (Tc)	8 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
SPP04N60C3HKSA1	Infineon Technologies	MOSFET N-CH 650V 4.5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock5,872	MOSFET (Metal Oxide)	650V	4.5A (Tc)	10V	3.9V @ 200µA	25nC @ 10V	490pF @ 25V	±20V	-	50W (Tc)	950 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
BUK9E2R3-40E,127	NXP	MOSFET N-CH 40V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 13160pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 293W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,672	MOSFET (Metal Oxide)	40V	120A (Tc)	5V, 10V	2.1V @ 1mA	87.8nC @ 5V	13160pF @ 25V	±10V	-	293W (Tc)	2.2 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
NTD4909N-35G	ON Semiconductor	MOSFET N-CH 30V 41A SGL IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock61,212	MOSFET (Metal Oxide)	30V	8.8A (Ta), 41A (Tc)	4.5V, 10V	2.2V @ 250µA	17.5nC @ 10V	1314pF @ 15V	±20V	-	1.37W (Ta), 29.4W (Tc)	8 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
FDMB506P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 6.8A 8MICROFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2960pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP, MicroFET (3x1.9) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,296	MOSFET (Metal Oxide)	20V	6.8A (Ta)	1.8V, 4.5V	1.5V @ 250µA	30nC @ 4.5V	2960pF @ 10V	±8V	-	1.9W (Ta)	30 mOhm @ 6.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP, MicroFET (3x1.9)	8-PowerWDFN
FDU6296	Fairchild/ON Semiconductor	MOSFET N-CH 30V 15A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,568	MOSFET (Metal Oxide)	30V	15A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	31.5nC @ 10V	1440pF @ 15V	±20V	-	3.8W (Ta), 52W (Tc)	8.8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
FDS7296N3	Fairchild/ON Semiconductor	MOSFET N-CH 30V 15A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock705,444	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	3V @ 250µA	32nC @ 10V	1540pF @ 15V	±20V	-	3W (Ta)	8 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF740L	Vishay Siliconix	MOSFET N-CH 400V 10A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,968	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	±20V	-	-	550 mOhm @ 6A, 10V	-	Through Hole	TO-220AB	TO-220-3
IPC60R070C6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,328	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTH60N25	IXYS	MOSFET N-CH 250V 60A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	250V	60A (Tc)	10V	4V @ 250µA	164nC @ 10V	4400pF @ 25V	±20V	-	400W (Tc)	46 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
DKI04077	Sanken	MOSFET N-CH 40V 47A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 23.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,264	MOSFET (Metal Oxide)	40V	47A (Tc)	4.5V, 10V	2.5V @ 350µA	18.5nC @ 10V	1470pF @ 25V	±20V	-	37W (Tc)	8.9 mOhm @ 23.3A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
CSD19532Q5B	Texas Instruments	MOSFET N-CH 100V 100A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,056	MOSFET (Metal Oxide)	100V	100A (Ta)	6V, 10V	3.2V @ 250µA	62nC @ 10V	4810pF @ 50V	±20V	-	3.1W (Ta), 195W (Tc)	4.9 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
BSH203,215	Nexperia USA Inc.	MOSFET P-CH 30V 470MA SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 680mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 24V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 417mW (Ta) Rds On (Max) @ Id, Vgs: 900 mOhm @ 280mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,072	MOSFET (Metal Oxide)	30V	470mA (Ta)	1.8V, 4.5V	680mV @ 1mA	2.2nC @ 4.5V	110pF @ 24V	±8V	-	417mW (Ta)	900 mOhm @ 280mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
STF6N65M2	STMicroelectronics	MOSFET N-CH 650V 4A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 226pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,640	MOSFET (Metal Oxide)	650V	4A (Tc)	10V	4V @ 250µA	9.8nC @ 10V	226pF @ 100V	±25V	-	20W (Tc)	1.35 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IRL40SC209	Infineon Technologies	MOSFET N-CH 40V 478A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 478A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 267nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 0.8 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock5,616	MOSFET (Metal Oxide)	40V	478A (Tc)	4.5V, 10V	2.4V @ 250µA	267nC @ 4.5V	15270pF @ 25V	±20V	-	375W (Tc)	0.8 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
VP0808L-G	Microchip Technology	MOSFET P-CH 80V 0.28A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 280mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock15,396	MOSFET (Metal Oxide)	80V	280mA (Tj)	10V	4.5V @ 1mA	-	150pF @ 25V	±30V	-	1W (Tc)	5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
MTP3055VL	Fairchild/ON Semiconductor	MOSFET N-CH 60V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 5V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock186,036	MOSFET (Metal Oxide)	60V	12A (Tc)	5V	2V @ 250µA	10nC @ 5V	570pF @ 25V	±15V	-	48W (Tc)	180 mOhm @ 6A, 5V	-65°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IPA023N04NM3SXKSA1	Infineon Technologies	TRENCH <= 40V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN34D0U-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT23 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V Vgs (Max): 8V FET Feature: - Power Dissipation (Max): 440mW (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	25 V	300mA (Ta)	2.7V, 4.5V	1.1V @ 250µA	0.4 nC @ 4.5 V	24 pF @ 10 V	8V	-	440mW (Ta)	4Ohm @ 400mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IPT054N15N5ATMA1	Infineon Technologies	TRENCH >=100V PG-HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 143A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 181µA Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	143A (Tc)	8V, 10V	4.6V @ 181µA	69 nC @ 10 V	5300 pF @ 75 V	±20V	-	250W (Tc)	5.4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
EPC7014UBC	EPC Space, LLC	GAN FET HEMT 60V 1A COTS 4UB FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V Vgs (Max): +7V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-SMD Package / Case: 4-SMD, No Lead	Package: -	Stock261	GaNFET (Gallium Nitride)	60 V	1A (Tc)	5V	2.5V @ 140µA	-	22 pF @ 30 V	+7V, -4V	-	-	580mOhm @ 1A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD	4-SMD, No Lead
TSM900N10CP	Taiwan Semiconductor Corporation	100V, 15A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	15A (Tc)	4.5V, 10V	2.5V @ 250µA	9.3 nC @ 10 V	1480 pF @ 50 V	±20V	-	50W (Tc)	90mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
STD3055L104T4G	onsemi	MOSFET N-CH 60V 12A DPAK-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MMFTN2362-AQ	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	3A (Ta)	4.5V, 10V	2.5V @ 250µA	8.6 nC @ 10 V	445 pF @ 30 V	±20V	-	1.25W (Ta)	80mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
CSD18563Q5A-P	Texas Instruments	60-V, N CHANNEL NEXFET POWER MOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 116W (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	15A (Ta), 93A (Tc)	4.5V, 10V	2.4V @ 250µA	20 nC @ 10 V	1500 pF @ 30 V	±20V	-	3.2W (Ta), 116W (Tc)	6.8mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
DMN3732U-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT23 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 420mW Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	1A (Ta)	1.8V, 4.5V	0.95V @ 250µA	0.9 nC @ 4.5 V	40.8 pF @ 25 V	±8V	-	420mW	460mOhm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSC091N03MSCGATMA1	Infineon Technologies	POWER FIELD-EFFECT TRANSISTOR, 1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	12A (Ta), 44A (Tc)	4.5V, 10V	2V @ 250µA	20 nC @ 10 V	1500 pF @ 15 V	±20V	-	2.5W (Ta), 28W (Tc)	9.1mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
IXTY05N100	IXYS	MOSFET N-CH TO252AA FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-