Page 999 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRFS3107
Infineon Technologies

MOSFET N-CH 75V 230A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,040
IRF1503STRRPBF
Infineon Technologies

MOSFET N-CH 30V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,352
BTS113ANKSA1
Infineon Technologies

MOSFET N-CH 60V 11.5A TO-220AB

Package: TO-220-3

Stock6,016
BSC032N03S
Infineon Technologies

MOSFET N-CH 30V 50A TDSON-8

Package: 8-PowerTDFN

Stock66,336
IRFR3704TRPBF
Infineon Technologies

MOSFET N-CH 20V 75A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock216,000
IRL8113S
Infineon Technologies

MOSFET N-CH 30V 105A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock405,168
SPD30P06P
Infineon Technologies

MOSFET P-CH 60V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,236,060
AON6566P
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 27A DFN

Package: 8-VDFN Exposed Pad

Stock5,104
PH1730AL,115
Nexperia USA Inc.

MOSFET N-CH 30V 100A LFPAK

Package: SC-100, SOT-669

Stock3,440
FQPF9N08
Fairchild/ON Semiconductor

MOSFET N-CH 80V 7A TO-220F

Package: TO-220-3 Full Pack

Stock2,464
IPP60R600P6XKSA1
Infineon Technologies

MOSFET N-CH 600V 7.3A TO220

Package: TO-220-3

Stock3,296
IPA60R160P6XKSA1
Infineon Technologies

MOSFET N-CH 600V TO220FP-3

Package: TO-220-3 Full Pack

Stock8,988
IRL40B212
Infineon Technologies

MOSFET N-CH 40V 195A

Package: TO-220-3

Stock22,416
FDS8876
Fairchild/ON Semiconductor

MOSFET N-CH 30V 12.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock962,748
STFI13N95K3
STMicroelectronics

MOSFET N CH 950V 10A I2PAKFP

Package: TO-262-3 Full Pack, I2Pak

Stock6,684
STP265N6F6AG
STMicroelectronics

MOSFET N-CH 60V 180A TO220

Package: TO-220-3

Stock22,164
IPT067N20NM6ATMA1
Infineon Technologies

TRENCH >=100V

Package: -

Stock5,985
NVTFS040N10MCLTAG
onsemi

PTNG 100V LL U8FL

Package: -

Stock4,470
2SJ451ZK-TL-E
Renesas Electronics Corporation

P-CHANNEL SMALL SIGNAL MOSFET

Package: -

Request a Quote
PJL9402_R2_00001
Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFS3107	Infineon Technologies	MOSFET N-CH 75V 230A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9370pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 140A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,040	MOSFET (Metal Oxide)	75V	195A (Tc)	10V	4V @ 250µA	240nC @ 10V	9370pF @ 50V	±20V	-	370W (Tc)	3 mOhm @ 140A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF1503STRRPBF	Infineon Technologies	MOSFET N-CH 30V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 140A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,352	MOSFET (Metal Oxide)	30V	75A (Tc)	10V	4V @ 250µA	200nC @ 10V	5730pF @ 25V	±20V	-	200W (Tc)	3.3 mOhm @ 140A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BTS113ANKSA1	Infineon Technologies	MOSFET N-CH 60V 11.5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 5.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: P-TO220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,016	MOSFET (Metal Oxide)	60V	11.5A (Tc)	4.5V	2.5V @ 1mA	-	560pF @ 25V	±10V	-	40W (Tc)	170 mOhm @ 5.8A, 4.5V	-55°C ~ 150°C (TJ)	Through Hole	P-TO220AB	TO-220-3
BSC032N03S	Infineon Technologies	MOSFET N-CH 30V 50A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock66,336	MOSFET (Metal Oxide)	30V	23A (Ta), 100A (Tc)	4.5V, 10V	2V @ 70µA	39nC @ 5V	5080pF @ 15V	±20V	-	2.8W (Ta), 78W (Tc)	3.2 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IRFR3704TRPBF	Infineon Technologies	MOSFET N-CH 20V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock216,000	MOSFET (Metal Oxide)	20V	75A (Tc)	10V	3V @ 250µA	19nC @ 4.5V	1996pF @ 10V	±20V	-	90W (Tc)	9.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL8113S	Infineon Technologies	MOSFET N-CH 30V 105A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock405,168	MOSFET (Metal Oxide)	30V	105A (Tc)	4.5V, 10V	2.25V @ 250µA	35nC @ 4.5V	2840pF @ 15V	±20V	-	110W (Tc)	6 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPD30P06P	Infineon Technologies	MOSFET P-CH 60V 30A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.7mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 21.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,236,060	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 1.7mA	48nC @ 10V	1535pF @ 25V	±20V	-	125W (Tc)	75 mOhm @ 21.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
AON6566P	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 27A DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock5,104	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	8-DFN (5x6)	8-VDFN Exposed Pad
PH1730AL,115	Nexperia USA Inc.	MOSFET N-CH 30V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 77.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5057pF @ 12V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock3,440	MOSFET (Metal Oxide)	30V	100A (Tc)	-	2.15V @ 1mA	77.9nC @ 10V	5057pF @ 12V	-	-	-	1.7 mOhm @ 15A, 10V	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
FQPF9N08	Fairchild/ON Semiconductor	MOSFET N-CH 80V 7A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,464	MOSFET (Metal Oxide)	80V	7A (Tc)	10V	4V @ 250µA	7.7nC @ 10V	250pF @ 25V	±25V	-	23W (Tc)	210 mOhm @ 3.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IPP60R600P6XKSA1	Infineon Technologies	MOSFET N-CH 600V 7.3A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock3,296	MOSFET (Metal Oxide)	600V	7.3A (Tc)	10V	4.5V @ 200µA	12nC @ 10V	557pF @ 100V	±20V	-	63W (Tc)	600 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPA60R160P6XKSA1	Infineon Technologies	MOSFET N-CH 600V TO220FP-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock8,988	MOSFET (Metal Oxide)	600V	23.8A (Tc)	10V	4.5V @ 750µA	44nC @ 10V	2080pF @ 100V	±20V	-	34W (Tc)	160 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
IRL40B212	Infineon Technologies	MOSFET N-CH 40V 195A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 8320pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock22,416	MOSFET (Metal Oxide)	40V	195A (Tc)	4.5V, 10V	2.4V @ 150µA	137nC @ 4.5V	8320pF @ 25V	±20V	-	231W (Tc)	1.9 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDS8876	Fairchild/ON Semiconductor	MOSFET N-CH 30V 12.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock962,748	MOSFET (Metal Oxide)	30V	12.5A (Ta)	4.5V, 10V	2.5V @ 250µA	36nC @ 10V	1650pF @ 15V	±20V	-	2.5W (Ta)	8.2 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STFI13N95K3	STMicroelectronics	MOSFET N CH 950V 10A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock6,684	MOSFET (Metal Oxide)	950V	10A (Tc)	10V	5V @ 100µA	51nC @ 10V	1620pF @ 100V	±30V	-	40W (Tc)	850 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
STP265N6F6AG	STMicroelectronics	MOSFET N-CH 60V 180A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.85 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock22,164	MOSFET (Metal Oxide)	60V	180A (Tc)	10V	4V @ 250µA	183nC @ 10V	11800pF @ 25V	±20V	-	300W (Tc)	2.85 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IPT067N20NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 137A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 4.5V @ 251µA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 126A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: -	Stock5,985	MOSFET (Metal Oxide)	200 V	15.3A (Ta), 137A (Tc)	10V, 15V	4.5V @ 251µA	107 nC @ 10 V	7300 pF @ 100 V	±20V	-	3.8W (Ta), 300W (Tc)	6.2mOhm @ 126A, 15V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
NVTFS040N10MCLTAG	onsemi	PTNG 100V LL U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock4,470	MOSFET (Metal Oxide)	100 V	6.1A (Ta), 21A (Tc)	4.5V, 10V	3V @ 26µA	8.6 nC @ 10 V	520 pF @ 50 V	±20V	-	3.1W (Ta), 36W (Tc)	38mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
2SJ451ZK-TL-E	Renesas Electronics Corporation	P-CHANNEL SMALL SIGNAL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJL9402_R2_00001	Panjit International Inc.	30V N-CHANNEL ENHANCEMENT MODE M FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	5A (Ta)	4.5V, 10V	2.1V @ 250µA	5.8 nC @ 10 V	235 pF @ 15 V	±20V	-	2.1W (Ta)	48mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
PJQ4446P-AU_R2_000A1	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock14,970	MOSFET (Metal Oxide)	40 V	10.5A (Ta), 48A (Tc)	4.5V, 10V	2.5V @ 250µA	22 nC @ 10 V	1258 pF @ 25 V	±20V	-	2.4W (Ta), 50W (Tc)	9mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
94-3316	Infineon Technologies	MOSFET N-CH 55V 2A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	2A (Ta)	-	2V @ 250µA	14 nC @ 10 V	230 pF @ 25 V	-	-	-	140mOhm @ 2A, 10V	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
SPD30P06PGBTMA1	Infineon Technologies	MOSFET P-CH 60V 30A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.7mA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 21.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock48,906	MOSFET (Metal Oxide)	60 V	30A (Tc)	10V	4V @ 1.7mA	48 nC @ 10 V	1535 pF @ 25 V	±20V	-	125W (Tc)	75mOhm @ 21.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHFZ48S-GE3	Vishay Siliconix	MOSFET N-CH 60V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 190W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	50A (Tc)	10V	4V @ 250µA	110 nC @ 10 V	2400 pF @ 25 V	±20V	-	3.7W (Ta), 190W (Tc)	18mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
2SK2980ZZ-TL-E	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT060N10T	Goford Semiconductor	MOSFET N-CH 100V 116A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5365 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock150	MOSFET (Metal Oxide)	100 V	116A (Tc)	10V	4V @ 250µA	83 nC @ 10 V	5365 pF @ 50 V	±20V	-	160W (Tc)	6mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IPB60R360P7ATMA1	Infineon Technologies	MOSFET N-CH 600V 9A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock16,677	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	4V @ 140µA	13 nC @ 10 V	555 pF @ 400 V	±20V	-	41W (Tc)	360mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RSS070P05TB1	Rohm Semiconductor	MOSFET P-CH 45V 7A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	45 V	7A (Ta)	4V, 10V	2.5V @ 1mA	47.6 nC @ 5 V	4100 pF @ 10 V	±20V	-	2W (Ta)	27mOhm @ 7A, 10V	150°C	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)