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Toshiba Semiconductor and Storage Products - Transistors - FETs, MOSFETs - Single

Records 1,075
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Image
Part Number
Manufacturer
Description
Package
Stock
Quantity
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TK19A50W-S5X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
Package: -
Request a Quote
MOSFET (Metal Oxide)
500 V
18.5A (Ta)
10V
3.7V @ 790µA
38 nC @ 10 V
1350 pF @ 300 V
±30V
-
40W (Tc)
190mOhm @ 7.9A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TK20J60W-S1VE
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3
Package: -
Stock63
MOSFET (Metal Oxide)
600 V
20A (Ta)
10V
3.7V @ 1mA
48 nC @ 10 V
1680 pF @ 300 V
±30V
-
165W (Tc)
155mOhm @ 10A, 10V
150°C
Through Hole
TO-3P(N)
TO-3P-3, SC-65-3
TPCP8011-LF
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR PS-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 940mW (Ta)
  • Rds On (Max) @ Id, Vgs: 51.2mOhm @ 2.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PS-8
  • Package / Case: 8-SMD, Flat Lead
Package: -
Stock8,940
MOSFET (Metal Oxide)
40 V
5A (Ta)
6V, 10V
3V @ 1mA
11.8 nC @ 10 V
505 pF @ 10 V
±20V
-
940mW (Ta)
51.2mOhm @ 2.5A, 10V
175°C
Surface Mount
PS-8
8-SMD, Flat Lead
SSM3J140TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4.4A UFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
Package: -
Stock5,640
MOSFET (Metal Oxide)
20 V
4.4A (Ta)
1.5V, 4.5V
1V @ 1mA
24.8 nC @ 4.5 V
1800 pF @ 10 V
+6V, -8V
-
500mW (Ta)
25.8mOhm @ 4A, 4.5V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
SSM6J422TU-LXHF
Toshiba Semiconductor and Storage

SMOS P-CH VDSS=-20V, VGSS=+6/-8V

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UF6
  • Package / Case: 6-SMD, Flat Leads
Package: -
Stock7,251
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
840 pF @ 10 V
+6V, -8V
-
1W (Ta)
42.7mOhm @ 3A, 4.5V
150°C
Surface Mount
UF6
6-SMD, Flat Leads
TK6R8A08QM-S4X
Toshiba Semiconductor and Storage

UMOS10 TO-220SIS 80V 6.8MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
Package: -
Stock120
MOSFET (Metal Oxide)
80 V
58A (Tc)
6V, 10V
3.5V @ 500µA
39 nC @ 10 V
2700 pF @ 40 V
±20V
-
41W (Tc)
6.8mOhm @ 29A, 10V
175°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM3J377R-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 3.9A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
Package: -
Stock8,499
MOSFET (Metal Oxide)
20 V
3.9A (Ta)
1.5V, 4.5V
1V @ 1mA
4.6 nC @ 4.5 V
290 pF @ 10 V
+6V, -8V
-
1W (Ta)
93mOhm @ 1.5A, 4.5V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3J372R-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET PCH -30V -6A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
  • Vgs (Max): +6V, -12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
Package: -
Stock30,726
MOSFET (Metal Oxide)
30 V
6A (Ta)
1.8V, 10V
1.2V @ 1mA
8.2 nC @ 4.5 V
560 pF @ 15 V
+6V, -12V
-
1W (Ta)
42mOhm @ 5A, 10V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3J15CT-L3F
Toshiba Semiconductor and Storage

SMALL LOW RON PCH MOSFETS VDSS:-

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3
  • Package / Case: SC-101, SOT-883
Package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V, 4V
1.7V @ 100µA
-
9.1 pF @ 3 V
±20V
-
100mW (Ta)
12Ohm @ 10mA, 4V
150°C
Surface Mount
CST3
SC-101, SOT-883
TW083N65C-S1F
Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 83MOH

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 111W (Tc)
  • Rds On (Max) @ Id, Vgs: 113mOhm @ 15A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Package: -
Stock426
SiCFET (Silicon Carbide)
650 V
30A (Tc)
18V
5V @ 600µA
28 nC @ 18 V
873 pF @ 400 V
+25V, -10V
-
111W (Tc)
113mOhm @ 15A, 18V
175°C
Through Hole
TO-247
TO-247-3
TPHR9003NL1-LQ
Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=78W F=1MHZ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
Package: -
Stock34,062
MOSFET (Metal Oxide)
30 V
150A (Tc)
4.5V, 10V
2.3V @ 1mA
74 nC @ 10 V
6900 pF @ 15 V
±20V
-
800mW (Ta), 170W (Tc)
0.9mOhm @ 50A, 10V
150°C
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
SSM3J168F-LXHF
Toshiba Semiconductor and Storage

SMOS LOW RON VDS:-60V VGSS:+10/-

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-Mini
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Package: -
Stock29,604
MOSFET (Metal Oxide)
60 V
400mA (Ta)
4V, 10V
2V @ 1mA
3 nC @ 10 V
82 pF @ 10 V
+10V, -20V
-
600mW (Ta)
1.55Ohm @ 200mA, 10V
150°C
Surface Mount
S-Mini
TO-236-3, SC-59, SOT-23-3
SSM6J50TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2.5A UF6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UF6
  • Package / Case: 6-SMD, Flat Leads
Package: -
Stock17,994
MOSFET (Metal Oxide)
20 V
2.5A (Ta)
2V, 4.5V
1.2V @ 200µA
-
800 pF @ 10 V
±10V
-
500mW (Ta)
64mOhm @ 1.5A, 4.5V
150°C
Surface Mount
UF6
6-SMD, Flat Leads
TJ8S06M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Package: -
Stock10,179
MOSFET (Metal Oxide)
60 V
8A (Ta)
6V, 10V
3V @ 1mA
19 nC @ 10 V
890 pF @ 10 V
+10V, -20V
-
27W (Tc)
104mOhm @ 4A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK25V60X-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 25A 4DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 135mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
Package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
25A (Ta)
10V
3.5V @ 1.2mA
40 nC @ 10 V
2400 pF @ 300 V
±30V
-
180W (Tc)
135mOhm @ 7.5A, 10V
150°C
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
SSM6J808R-LXHF
Toshiba Semiconductor and Storage

AUTO AEC-Q SS MOS P-CH LOGIC-LEV

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP-F
  • Package / Case: 6-SMD, Flat Leads
Package: -
Stock7,932
MOSFET (Metal Oxide)
40 V
7A (Ta)
4V, 10V
2V @ 100µA
24.2 nC @ 10 V
1020 pF @ 10 V
+10V, -20V
-
1.5W (Ta)
35mOhm @ 2.5A, 10V
150°C
Surface Mount
6-TSOP-F
6-SMD, Flat Leads
TK31Z60X-S1F
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(T)
  • Package / Case: TO-247-4
Package: -
Stock78
MOSFET (Metal Oxide)
600 V
30.8A (Ta)
10V
3.5V @ 1.5mA
65 nC @ 10 V
3000 pF @ 300 V
±30V
-
230W (Tc)
88mOhm @ 9.4A, 10V
150°C
Through Hole
TO-247-4L(T)
TO-247-4
TK110P10PL-RQ
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Package: -
Stock4,038
MOSFET (Metal Oxide)
100 V
40A (Tc)
4.5V, 10V
2.5V @ 300µA
33 nC @ 10 V
2040 pF @ 50 V
±20V
-
75W (Tc)
10.6mOhm @ 20A, 10V
175°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK2R9E10PL-S1X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 306W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Package: -
Stock141
MOSFET (Metal Oxide)
100 V
100A (Ta)
4.5V, 10V
2.5V @ 1mA
161 nC @ 10 V
9500 pF @ 50 V
±20V
-
306W (Tc)
2.9mOhm @ 50A, 10V
175°C
Through Hole
TO-220
TO-220-3
TK10A60E-S5X
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 10A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
Package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
10A (Ta)
10V
4V @ 1mA
40 nC @ 10 V
1300 pF @ 25 V
±30V
-
45W (Tc)
750mOhm @ 5A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
TK14V65W-LQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DTM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 690µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
Package: -
Stock7,182
MOSFET (Metal Oxide)
650 V
13.7A (Ta)
10V
3.5V @ 690µA
35 nC @ 10 V
1300 pF @ 300 V
±30V
-
139W (Tc)
280mOhm @ 6.9A, 10V
150°C
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
TW140Z120C-S1F
Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247-4L 14

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 191mOhm @ 10A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(X)
  • Package / Case: TO-247-4
Package: -
Stock360
SiC (Silicon Carbide Junction Transistor)
1200 V
20A (Tc)
18V
5V @ 1mA
24 nC @ 18 V
691 pF @ 800 V
+25V, -10V
-
107W (Tc)
191mOhm @ 10A, 18V
175°C
Through Hole
TO-247-4L(X)
TO-247-4
TPCA8016-H-TE12LQM
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A 8-SOPA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 13A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
Package: -
Request a Quote
MOSFET (Metal Oxide)
60 V
25A (Ta)
-
2.3V @ 1mA
22 nC @ 10 V
1375 pF @ 10 V
-
-
-
21mOhm @ 13A, 10V
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TK12A50W-S5X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
Package: -
Stock150
MOSFET (Metal Oxide)
500 V
11.5A (Ta)
10V
3.7V @ 600µA
25 nC @ 10 V
890 pF @ 300 V
±30V
-
35W (Tc)
300mOhm @ 5.8A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TPCA8045-H-T2L1-VM
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 46A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
Package: -
Request a Quote
MOSFET (Metal Oxide)
40 V
46A (Ta)
4.5V, 10V
2.3V @ 1mA
90 nC @ 10 V
7540 pF @ 10 V
±20V
-
1.6W (Ta), 45W (Tc)
3.6mOhm @ 23A, 10V
150°C (TJ)
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
SSM3K361R-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET NCH 100V 3.5A SOT23F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
Package: -
Stock34,539
MOSFET (Metal Oxide)
100 V
3.5A (Ta)
4.5V, 10V
2.5V @ 100µA
3.2 nC @ 4.5 V
430 pF @ 15 V
±20V
-
1.2W (Ta)
69mOhm @ 2A, 10V
175°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
TK190A65Z-S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 15A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 610µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
Package: -
Stock468
MOSFET (Metal Oxide)
650 V
15A (Ta)
10V
4V @ 610µA
25 nC @ 10 V
1370 pF @ 300 V
±30V
-
40W (Tc)
190mOhm @ 7.5A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TPW3R70APL-L1Q
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DSOP Advance
  • Package / Case: 8-PowerWDFN
Package: -
Stock15,000
MOSFET (Metal Oxide)
100 V
90A (Tc)
4.5V, 10V
2.5V @ 1mA
67 nC @ 10 V
6300 pF @ 50 V
±20V
-
960mW (Ta), 170W (Tc)
3.7mOhm @ 45A, 10V
175°C
Surface Mount
8-DSOP Advance
8-PowerWDFN
TK17A65W5-S5X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 900µA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 8.7A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
Package: -
Stock135
MOSFET (Metal Oxide)
650 V
17.3A (Ta)
10V
4.5V @ 900µA
50 nC @ 10 V
1800 pF @ 300 V
±30V
-
45W (Tc)
230mOhm @ 8.7A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM3K376R-LXHF
Toshiba Semiconductor and Storage

SMOS LOW RON NCH ID: 4A VDSS: 30

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
  • Vgs (Max): +12V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
Package: -
Stock18,000
MOSFET (Metal Oxide)
30 V
4A (Ta)
1.8V, 4.5V
1V @ 1mA
2.2 nC @ 4.5 V
200 pF @ 10 V
+12V, -8V
-
1W (Ta)
56mOhm @ 2A, 4.5V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads