Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA VESM
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Package: - |
Stock57,738 |
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MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | - | 8.5 pF @ 3 V | ±20V | - | 150mW (Ta) | 4Ohm @ 10mA, 4V | 150°C | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247-4L 6
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Package: - |
Stock354 |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 36A (Tc) | 18V | 5V @ 4.2mA | 46 nC @ 18 V | 1530 pF @ 800 V | +25V, -10V | - | 170W (Tc) | 82mOhm @ 18A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
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Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247-4L 10
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Package: - |
Stock270 |
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SiC (Silicon Carbide Junction Transistor) | 650 V | 20A (Tc) | 18V | 5V @ 1.2mA | 21 nC @ 18 V | 600 pF @ 400 V | +25V, -10V | - | 76W (Tc) | 152mOhm @ 10A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 40A DPAK
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Package: - |
Stock2,928 |
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MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 4.5V, 10V | 2.5V @ 200µA | 26 nC @ 10 V | 1650 pF @ 10 V | ±20V | - | 88.2W (Tc) | 18mOhm @ 20A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 16A 8SOP
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 16A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 87 nC @ 10 V | 7540 pF @ 10 V | ±20V | - | 1W (Ta) | 6.9mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 6A SOT23F
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Package: - |
Stock603,510 |
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MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 1.8V, 10V | 1.2V @ 1mA | 8.2 nC @ 4.5 V | 560 pF @ 15 V | +12V, -6V | - | 1W (Ta) | 42mOhm @ 5A, 10V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
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Package: - |
Stock150 |
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MOSFET (Metal Oxide) | 800 V | 5A (Ta) | 10V | 4V @ 500µA | 20 nC @ 10 V | 950 pF @ 25 V | ±30V | - | 40W (Tc) | 2.4Ohm @ 2.5A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
SMOS P-CH VDSS:-20V VGSS:-8/+6V
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Package: - |
Stock39,117 |
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MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 10.4 nC @ 4.5 V | 630 pF @ 10 V | +6V, -8V | - | 1W (Ta) | 55mOhm @ 3A, 4.5V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
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Package: - |
Stock75 |
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MOSFET (Metal Oxide) | 200 V | 25A (Ta) | 10V | 3.5V @ 1mA | 60 nC @ 10 V | 2550 pF @ 100 V | ±20V | - | 45W (Tc) | 70mOhm @ 12.5A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
SMOS P-CH VDSS:-20V VGSS:-8/+6V
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Package: - |
Stock15,285 |
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MOSFET (Metal Oxide) | 20 V | 3.2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.7 nC @ 4.5 V | 290 pF @ 10 V | +6V, -8V | - | 500mW (Ta) | 93mOhm @ 1.5A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 90A 8SOP
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Package: - |
Stock25,680 |
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MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 67 nC @ 10 V | 6300 pF @ 50 V | ±20V | - | 960mW (Ta), 170W (Tc) | 3.7mOhm @ 45A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 100A 8SOP
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Package: - |
Stock29,946 |
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MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 91 nC @ 10 V | 8100 pF @ 30 V | ±20V | - | 960mW (Ta), 170W (Tc) | 1.34mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247 27MOH
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Package: - |
Stock36 |
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SiCFET (Silicon Carbide) | 650 V | 58A (Tc) | 18V | 5V @ 3mA | 65 nC @ 18 V | 2288 pF @ 400 V | +25V, -10V | - | 156W (Tc) | 37mOhm @ 29A, 18V | 175°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 30A TO247-4L
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Package: - |
Stock75 |
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MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 4V @ 1.27mA | 47 nC @ 10 V | 2780 pF @ 300 V | ±30V | - | 230W (Tc) | 90mOhm @ 15A, 10V | 150°C | Through Hole | TO-247-4L(T) | TO-247-4 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 92A/70A 8SOP
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Package: - |
Stock18,663 |
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MOSFET (Metal Oxide) | 100 V | 92A (Ta), 70A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 75 nC @ 10 V | 6300 pF @ 50 V | ±20V | - | 2.5W (Ta), 67W (Tc) | 4.1mOhm @ 35A, 10V | 150°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO2
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Package: - |
Stock168 |
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MOSFET (Metal Oxide) | 650 V | 49.2A (Ta) | 10V | 3.5V @ 2.5mA | 160 nC @ 10 V | 6500 pF @ 300 V | ±30V | - | 400W (Tc) | 55mOhm @ 24.6A, 10V | 150°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
DTMOS VI TOLL PD=150W F=1MHZ
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Package: - |
Stock11,889 |
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MOSFET (Metal Oxide) | 650 V | 18A (Ta) | 10V | 4V @ 730µA | 29 nC @ 10 V | 1635 pF @ 300 V | ±30V | - | 150W (Tc) | 155mOhm @ 9A, 10V | 150°C | Surface Mount | TOLL | 8-PowerSFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DOS
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Package: - |
Stock4,695 |
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MOSFET (Metal Oxide) | 75 V | 150A (Ta) | 10V | 4V @ 1mA | 72 nC @ 10 V | 6000 pF @ 37.5 V | ±20V | - | 800mW (Ta), 142W (Tc) | 2.5mOhm @ 50A, 10V | 150°C | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 7A DPAK
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Package: - |
Stock8,715 |
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MOSFET (Metal Oxide) | 100 V | 7A (Ta) | 10V | 4V @ 100µA | 7.1 nC @ 10 V | 470 pF @ 10 V | ±20V | - | 50W (Tc) | 48mOhm @ 3.5A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
TJ9A10M3,S4Q
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 9A (Ta) | 10V | 4V @ 1mA | 47 nC @ 10 V | 2900 pF @ 10 V | ±20V | - | 19W (Tc) | 170mOhm @ 4.5A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q SS MOS N-CH LOGIC-LEV
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Package: - |
Stock17,835 |
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MOSFET (Metal Oxide) | 100 V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | 430 pF @ 15 V | ±20V | - | 1.5W (Ta) | 69mOhm @ 2A, 10V | 175°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q SS MOS P-CH LOW VOLTA
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Package: - |
Stock43,233 |
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MOSFET (Metal Oxide) | 20 V | 800mA (Ta) | 1.2V, 4.5V | 1V @ 1mA | 1.6 nC @ 4.5 V | 100 pF @ 10 V | +6V, -8V | - | 150mW (Ta) | 390mOhm @ 800mA, 4.5V | 150°C | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 120A 8DSOP
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Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 120A (Ta) | 6V, 10V | 3V @ 500µA | 55 nC @ 10 V | 4560 pF @ 10 V | ±20V | - | 960mW (Ta), 132W (Tc) | 1.14mOhm @ 60A, 10V | 175°C | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 82A 8SOP
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Package: - |
Stock15,465 |
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MOSFET (Metal Oxide) | 40 V | 82A (Tc) | 4.5V, 10V | 2.4V @ 300µA | 47 nC @ 10 V | 3615 pF @ 20 V | ±20V | - | 830mW (Ta), 90W (Tc) | 3.7mOhm @ 41A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
650V DTMOS VI TO-220 110MOHM
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Package: - |
Stock318 |
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MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 4V @ 1.02mA | 40 nC @ 10 V | 2250 pF @ 300 V | ±30V | - | 190W (Tc) | 110mOhm @ 12A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A 6UDFNB
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Package: - |
Stock17,535 |
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MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 2.5 nC @ 4.5 V | 280 pF @ 15 V | +20V, -12V | - | 1.25W (Ta) | 46mOhm @ 4A, 10V | 150°C | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 800MA VESM
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Package: - |
Stock18,804 |
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MOSFET (Metal Oxide) | 20 V | 800mA (Ta) | 1.2V, 4.5V | 1V @ 1mA | 1.6 nC @ 4.5 V | 100 pF @ 10 V | +6V, -8V | - | 150mW (Ta) | 390mOhm @ 800mA, 4.5V | 150°C | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
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Package: - |
Stock5,961 |
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MOSFET (Metal Oxide) | 650 V | 5.2A (Ta) | 10V | 3.5V @ 170µA | 10.5 nC @ 10 V | 380 pF @ 300 V | ±30V | - | 60W (Tc) | 1.22Ohm @ 2.6A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
150V U-MOS IX-H SOP-ADVANCE(N) 3
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Package: - |
Stock28,071 |
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MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 67 nC @ 10 V | 6300 pF @ 50 V | ±20V | - | 210W (Tc) | 3.7mOhm @ 45A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5.75) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CHANNEL 12V 4.8A ES6
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Package: - |
Stock2,400 |
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MOSFET (Metal Oxide) | 12 V | 4.8A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.7 nC @ 4.5 V | 1040 pF @ 12 V | ±8V | - | 700mW (Ta) | 32mOhm @ 3.5A, 4.5V | 150°C | Surface Mount | ES6 | SOT-563, SOT-666 |