The BC547 is an NPN bipolar-junction triode (BJT) which means that the emitter and collector consist of an n-type substrate while the base consists of a p-type substrate. The two p-n junctions formed between these regions give rise to the various input-output characteristics of the transistors.
As the name itself indicates, a transistor basically works by transferring resistance. In other words, small current input at the base terminal leads to larger currents through the collector and emitter terminals.
The Bc547 junction transistor is mainly used for switching and amplification purposes. These two uses are briefly described below:
1. Switching electrical circuits- When the emitter-base junction of the transistor is forward biased (i.e. has a forward voltage greater than 0.7 V across it), a conducting path is created between the collector and emitter terminal and the transistor acts as a switch in ON state. For this, both the emitter-base and the collector-base junctions must be forward biased. The transistor is said to be in the saturation region.
In case the emitter-base voltage is lower than 0.7 V (say 0 V), there is almost no conduction between the collector and emitter terminals and hence, the transistor acts a switch in OFF state. For this, both the emitter-base and the collector-base junctions must be reverse biased.
Thus, these transistors are extremely important in electronic circuits where switching needs to be done electrically and not mechanically. The transistor is said to be in the cutoff region. This can be used to drive loads like relays and motors which can’t be directly powered by the output of normal logic circuits.
Important ratings and input-output characteristics of the Bc547 transistor:
BC547-AP
BC547-AP
For Reference Only
| Part Number | BC547-AP |
|---|---|
| Manufacturer | Micro Commercial Co |
| Description | TRANS NPN 45V 0.1A TO-92 |
| Datasheet | BC547-AP Datasheet |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| In Stock | 373 piece(s) |
| Unit Price | Request a Quote |
| Lead Time | To be Confirmed |
| Estimated Delivery Time | Jul 7 - Jul 12 (Choose Expedited Shipping) |
| Request for Quotation |
|
Part Number # BC547-AP (Transistors - Bipolar (BJT) - Single) is manufactured by Micro Commercial Co and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.
For BC547-AP specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add BC547-AP with quantity into BOM. Heisener.com does NOT require any registration to request a quote of BC547-AP.
| Manufacturer | Micro Commercial Co |
| Category | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single |
| Datasheet | BC547-APDatasheet |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Power - Max | 625mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92 |
Features Through Hole Package 150 o C Junction Temperature Mechanical Data Case: TO-92, Molded Plastic Polarity: indicated as below. Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Value Unit Collector-Emitter Voltage BC546 BC547 BC548 VCEO 65 45 30 V Collector-Base Voltage BC546 BC547 BC548 VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 V Collector Current(DC) IC 100 mA Power Dissipation@TA=25 oC Pd 625 5.0 mW mW/oC Power Dissipation@TC=25 oC Pd 1.5 12 W mW/oC Thermal Resistance, Junction to Ambient Air 200 oC/W Thermal Resistance, Junction to Case 83.3 oC/W Operating & Storage Temperature Tj, TSTG -55~150 oC BC546B BC547A/B/C BC548A/B/C NPN Silicon Amplifier Transistor 625mW RJC RJA TO-92 A E B C D G Revision: 8 2010/08/18 omponents 20736 Marilla Street Chatsworth M C C DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .170 .190 4.33 4.83 B .170 .190 4.30 4.83 C .550 .590 13.97 14.97 D .010 .020 0.36 0.56 E .130 .160 3.30 3.96 G .096 .104 2.44 2.64 TM Micro Commercial Components Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL rating 1 www.mccsemi.com 1 of 5 Marking:Type Number 3 2 1 1-Collector 2-Base 3-Emitter • Lead Free Finish/Rohs Compliant) ("P"Suffix designates Compliant. See ordering information)
M C C ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) BC547A/548A BC546B/547B/548B BC548C (IC = 2.0 mA, VCE = 5.0 V) BC547A/548A BC546B/547B/548B BC547C/BC548C (IC = 100 mA, VCE = 5.0 V) BC547A/548A BC546B/547B/548B BC548C hFE — — — 110 200 420 — — — 90 150 270 180 290 520 120 180 300 — — — 220 450 800 — — — — Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) — --- 0.3 V Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) — 1.0— V Base–Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) VBE(on) 0.55 — — — 0.7 0.77 V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC546 BC547 BC548 fT 150 150 150 300 300 300 — — — MHz Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Cobo — 1.7 4.5 pF Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cibo — 10 — pF Small–Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC547A/548A BC546B/547B/548B BC547C/548C hfe 125 240 450 220 330 600 260 500 900 — Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 k, BC546 f = 1.0 kHz, ∆f = 200 Hz) BC547 BC548 NF — — — 2.0 2.0 2.0 10 10 10 dB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage BC546 (IC = 1.0 mA, IB = 0) BC547 BC548 V(BR)CEO 65 45 30 — — — — — — V Collector–Base Breakdown Voltage BC546 (IC = 100 µAdc) BC547 BC548 V(BR)CBO 80 50 30 — — — — — — V Emitter–Base Breakdown Voltage BC546 (IE = 10 A, IC = 0) BC547 BC548 V(BR)EBO 6.0 6.0 6.0 — — — — — — V BC546 thru BC548C Revision: 8 2010/08/18 TM Micro Commercial Components www.mccsemi.com 2 of 5
M C C BC546 thru BC548C Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient ! " # # $ % % $ % % & ! % $ % % ! ' % ( ° θ )° % *+,-() % *+,-() % ./-%)% %)% )° &°,.0°)° ) ) ) ) ) BC547/BC548 Figure 5. Capacitances % % %$ % Figure 6. Current–Gain – Bandwidth Product %)% )° ' 1 23 &$ & # 4 # 5 ' # ! 5 6 )° .7 87 Revision: 8 2010/08/18 TM Micro Commercial Components www.mccsemi.com 3 of 5
M C C BC546 thru BC548C BC547/BC548 Figure 7. DC Current Gain Figure 8. “On” Voltage )° % *+,-() % *+,-() %-%)% Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient & % & ! % $ % % ! ' % ( ° θ )° ) # $ ! " # % % $ % %)% )° & & & & & &°,.° θ%2.9% BC546 Figure 11. Capacitance % % %$ % Figure 12. Current–Gain – Bandwidth Product %)% )° ' 1 23 &$ & # 4 # 5 ' # )° .7 87 Revision: 8 2010/08/18 TM Micro Commercial Components www.mccsemi.com 4 of 5
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