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BSS123-7-F

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BSS123-7-F

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Part Number BSS123-7-F
Manufacturer Diodes Incorporated
Description MOSFET N-CH 100V 170MA SOT23-3
Datasheet BSS123-7-F Datasheet
Package TO-236-3, SC-59, SOT-23-3
In Stock 6,200,480 piece(s)
Unit Price $ 0.0503 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 3 - Jun 8 (Choose Expedited Shipping)
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Part Number # BSS123-7-F (Transistors - FETs, MOSFETs - Single) is manufactured by Diodes Incorporated and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For BSS123-7-F specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add BSS123-7-F with quantity into BOM. Heisener.com does NOT require any registration to request a quote of BSS123-7-F.

BSS123-7-F Specifications

ManufacturerDiodes Incorporated
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet BSS123-7-FDatasheet
PackageTO-236-3, SC-59, SOT-23-3
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)300mW (Ta)
Rds On (Max) @ Id, Vgs6 Ohm @ 170mA, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

BSS123-7-F Datasheet

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BSS123 Document number: DS30366 Rev. 20 - 2 1 of 7 www.diodes.com March 2016 © Diodes Incorporated BSS123 A D V A N C E I N F O R M A T I O N N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) ID TA = +25°C 100V 6.0Ω @ VGS = 10V 0.17A Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as:  Small Servo Motor Control  Power MOSFET Gate Drivers  Switching Applications Features and Benefits  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  High Drain-Source Voltage Rating  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: SOT23  Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208  Terminal Connections: See Diagram  Weight: 0.008 grams (Approximate) Ordering Information (Note 5) Part Number Qualification Case Packaging BSS123-7-F Commercial SOT23 3,000 / Tape & Reel BSS123Q-13 Automotive SOT23 10,000 / Tape & Reel BSS123Q-7 Automotive SOT23 3,000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 Code T U V W X Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Equivalent Circuit Top View Top View SOT23 D G S K23 = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: C = 2015) M = Month (ex: 9 = September) D S G e3

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BSS123 Document number: DS30366 Rev. 20 - 2 2 of 7 www.diodes.com March 2016 © Diodes Incorporated BSS123 A D V A N C E I N F O R M A T I O N Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage Continuous VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Continuous ID 170 mA Pulsed IDM 680 Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Max Unit Power Dissipation (Note 6) PD 300 mW Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) RθJA 417 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 100 - - V VGS = 0V, ID = 250A Zero Gate Voltage Drain Current IDSS - - 0.1 A VDS = 100V, VGS = 0V - - 30 A VDS = 100V, VGS = 0V @ TA = 150°C (Note 8) - - 10 nA VDS = 20V, VGS = 0V Gate-Source Leakage , Forward IGSSF - - 50 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.8 1.4 2.0 V VDS = VGS, ID = 1mA Static Drain-Source On-Resistance RDS(ON) - - 6.0 Ω VGS = 10V, ID = 0.17A - - 10 VGS = 4.5V, ID = 0.17A Forward Transfer Admittance gFS 80 370 - ms VDS =10V, ID = 0.17A, f = 1.0KHz Diode Forward Voltage VSD - 0.84 1.3 V VGS = 0V, IS = 0.34A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 22 60 pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 3.5 15 Reverse Transfer Capacitance Crss - 2.0 6 SWITCHING CHARACTERISTICS (Note 8) Turn-On Delay Time tD(ON) - - 8 ns VGS = 10V, VDD = 30V, ID = 0.28A, RGEN = 50Ω Turn-On Rise Time tR - - 8 ns Turn-Off Delay Time tD(OFF) - - 13 ns Turn-Off Fall Time tF - - 16 ns Notes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.

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BSS123 Document number: DS30366 Rev. 20 - 2 3 of 7 www.diodes.com March 2016 © Diodes Incorporated BSS123 A D V A N C E I N F O R M A T I O N 0.0 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5 I D , D R A IN C U R R E N T ( A ) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic VGS = 2.5V VGS = 3.0V VGS = 4.0V VGS = 10.0V VGS=5.0V VGS = 6.0V 2 3 4 5 6 0 0.1 0.2 0.3 0.4 0.5 R D S (O N ), D R A IN -S O U R C E O N -R E S IS T A N C E (W ) ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 10V VGS =4.5V 0 4 8 12 16 20 0 4 8 12 16 20R D S (O N ), D R A IN -S O U R C E O N -R E S IS T A N C E ( W ) VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic ID = 170mA 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 R D S (O N ), D R A IN -S O U R C E O N -R E S IS T A N C E (W ) ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature -55℃ 25℃ 85℃ 150℃ 125℃ VGS = 10V 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 R D S (O N ), D R A IN -S O U R C E O N -R E S IS T A N C E (N O R M A L IZ E D ) TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature VGS = 10V, ID = 170mA VGS = 4.5V, ID = 170mA 0 0.05 0.1 0.15 0.2 0.25 0.3 0.6 1 1.4 1.8 2.2 2.6 3 3.4 I D , D R A IN C U R R E N T ( A ) VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic VDS = 5V -55℃ 25℃ 85℃ 125℃ 150℃

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BSS123 Document number: DS30366 Rev. 20 - 2 4 of 7 www.diodes.com March 2016 © Diodes Incorporated BSS123 A D V A N C E I N F O R M A T I O N 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150R D S (O N ), D R A IN -S O U R C E O N -R E S IS T A N C E ( W ) TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature VGS = 10V, ID = 170mA VGS = 4.5V, ID = 170mA 0 0.1 0.2 0.3 0.4 0.5 0 0.3 0.6 0.9 1.2 1.5 I S , S O U R C E C U R R E N T ( A ) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current TJ = 125 oC TJ = 85 oC TJ = 25 oC TJ = -55 oC VGS = 0V TJ = 150 oC 1 10 100 0 5 10 15 20 25 30 35 40 C T , J U N C T IO N C A P A C IT A N C E ( p F ) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance f=1MHz Crss Coss Ciss 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 V G S (V ) Qg (nC) Figure 11. Gate Charge VDS = 30V, ID = 0.28A 0.001 0.01 0.1 1 0.1 1 10 100 1000 I D , D R A IN C U R R E N T ( A ) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area PW =10ms PW =100µs DC RDS(ON) Limited PW =1ms PW =100ms TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS= 10V PW =1s PW =10s 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 V G S (T H ), G A T E T H R E S H O L D V O L T A G E ( V ) TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature ID = 250μA ID = 1mA

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BSS123 Document number: DS30366 Rev. 20 - 2 5 of 7 www.diodes.com March 2016 © Diodes Incorporated BSS123 A D V A N C E I N F O R M A T I O N 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r( t) , T R A N S IE N T T H E R M A L R E S IS T A N C E t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance D=Single Pulse D=0.005 D=0.01 D=0.02 D=0.05 D=0.1 D=0.3 D=0.5 D=0.9 D=0.7 RθJA(t) = r(t) * RθJA RθJA = 357℃/W Duty Cycle, D = t1 / t2

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BSS123 Document number: DS30366 Rev. 20 - 2 6 of 7 www.diodes.com March 2016 © Diodes Incorporated BSS123 A D V A N C E I N F O R M A T I O N Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 J K1 K L1 GAUGE PLANE 0.25 H L M All 7° A C B D GF a Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 X Y Y1 C X1

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May 25, 2020

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May 17, 2020

Item sent as described. Showed up quickly. Worked as it said and would recommend again.

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May 17, 2020

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May 14, 2020

I have used 2 of the 10 units so far and they work fine.

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