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BSS123-7-F

hot BSS123-7-F

BSS123-7-F

For Reference Only

Part Number BSS123-7-F
Manufacturer Diodes Incorporated
Description MOSFET N-CH 100V 170MA SOT23-3
Datasheet BSS123-7-F Datasheet
Package TO-236-3, SC-59, SOT-23-3
In Stock 6200480 piece(s)
Unit Price $ 0.0503 *
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BSS123-7-F

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BSS123-7-F Specifications

ManufacturerDiodes Incorporated
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet BSS123-7-F Datasheet
PackageTO-236-3, SC-59, SOT-23-3
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25��C170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
Vgs (Max)��20V
Power Dissipation (Max)300mW (Ta)
Rds On (Max) @ Id, Vgs6 Ohm @ 170mA, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

BSS123-7-F Datasheet

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BSS123 Document number: DS30366 Rev. 20 - 2 1 of 7 www.diodes.com March 2016 © Diodes Incorporated BSS123 A D V A N C E I N F O R M A T I O N N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) ID TA = +25°C 100V 6.0Ω @ VGS = 10V 0.17A Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as:  Small Servo Motor Control  Power MOSFET Gate Drivers  Switching Applications Features and Benefits  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  High Drain-Source Voltage Rating  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: SOT23  Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208  Terminal Connections: See Diagram  Weight: 0.008 grams (Approximate) Ordering Information (Note 5) Part Number Qualification Case Packaging BSS123-7-F Commercial SOT23 3,000 / Tape & Reel BSS123Q-13 Automotive SOT23 10,000 / Tape & Reel BSS123Q-7 Automotive SOT23 3,000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 Code T U V W X Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Equivalent Circuit Top View Top View SOT23 D G S K23 = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: C = 2015) M = Month (ex: 9 = September) D S G e3

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BSS123 Document number: DS30366 Rev. 20 - 2 2 of 7 www.diodes.com March 2016 © Diodes Incorporated BSS123 A D V A N C E I N F O R M A T I O N Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage Continuous VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Continuous ID 170 mA Pulsed IDM 680 Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Max Unit Power Dissipation (Note 6) PD 300 mW Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) RθJA 417 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 100 - - V VGS = 0V, ID = 250A Zero Gate Voltage Drain Current IDSS - - 0.1 A VDS = 100V, VGS = 0V - - 30 A VDS = 100V, VGS = 0V @ TA = 150°C (Note 8) - - 10 nA VDS = 20V, VGS = 0V Gate-Source Leakage , Forward IGSSF - - 50 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.8 1.4 2.0 V VDS = VGS, ID = 1mA Static Drain-Source On-Resistance RDS(ON) - - 6.0 Ω VGS = 10V, ID = 0.17A - - 10 VGS = 4.5V, ID = 0.17A Forward Transfer Admittance gFS 80 370 - ms VDS =10V, ID = 0.17A, f = 1.0KHz Diode Forward Voltage VSD - 0.84 1.3 V VGS = 0V, IS = 0.34A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 22 60 pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 3.5 15 Reverse Transfer Capacitance Crss - 2.0 6 SWITCHING CHARACTERISTICS (Note 8) Turn-On Delay Time tD(ON) - - 8 ns VGS = 10V, VDD = 30V, ID = 0.28A, RGEN = 50Ω Turn-On Rise Time tR - - 8 ns Turn-Off Delay Time tD(OFF) - - 13 ns Turn-Off Fall Time tF - - 16 ns Notes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.

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BSS123 Document number: DS30366 Rev. 20 - 2 3 of 7 www.diodes.com March 2016 © Diodes Incorporated BSS123 A D V A N C E I N F O R M A T I O N 0.0 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5 I D , D R A IN C U R R E N T ( A ) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic VGS = 2.5V VGS = 3.0V VGS = 4.0V VGS = 10.0V VGS=5.0V VGS = 6.0V 2 3 4 5 6 0 0.1 0.2 0.3 0.4 0.5 R D S (O N ), D R A IN -S O U R C E O N -R E S IS T A N C E (W ) ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 10V VGS =4.5V 0 4 8 12 16 20 0 4 8 12 16 20R D S (O N ), D R A IN -S O U R C E O N -R E S IS T A N C E ( W ) VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic ID = 170mA 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 R D S (O N ), D R A IN -S O U R C E O N -R E S IS T A N C E (W ) ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature -55℃ 25℃ 85℃ 150℃ 125℃ VGS = 10V 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 R D S (O N ), D R A IN -S O U R C E O N -R E S IS T A N C E (N O R M A L IZ E D ) TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature VGS = 10V, ID = 170mA VGS = 4.5V, ID = 170mA 0 0.05 0.1 0.15 0.2 0.25 0.3 0.6 1 1.4 1.8 2.2 2.6 3 3.4 I D , D R A IN C U R R E N T ( A ) VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic VDS = 5V -55℃ 25℃ 85℃ 125℃ 150℃

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BSS123 Document number: DS30366 Rev. 20 - 2 4 of 7 www.diodes.com March 2016 © Diodes Incorporated BSS123 A D V A N C E I N F O R M A T I O N 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150R D S (O N ), D R A IN -S O U R C E O N -R E S IS T A N C E ( W ) TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature VGS = 10V, ID = 170mA VGS = 4.5V, ID = 170mA 0 0.1 0.2 0.3 0.4 0.5 0 0.3 0.6 0.9 1.2 1.5 I S , S O U R C E C U R R E N T ( A ) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current TJ = 125 oC TJ = 85 oC TJ = 25 oC TJ = -55 oC VGS = 0V TJ = 150 oC 1 10 100 0 5 10 15 20 25 30 35 40 C T , J U N C T IO N C A P A C IT A N C E ( p F ) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance f=1MHz Crss Coss Ciss 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 V G S (V ) Qg (nC) Figure 11. Gate Charge VDS = 30V, ID = 0.28A 0.001 0.01 0.1 1 0.1 1 10 100 1000 I D , D R A IN C U R R E N T ( A ) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area PW =10ms PW =100µs DC RDS(ON) Limited PW =1ms PW =100ms TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS= 10V PW =1s PW =10s 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 V G S (T H ), G A T E T H R E S H O L D V O L T A G E ( V ) TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature ID = 250μA ID = 1mA

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BSS123 Document number: DS30366 Rev. 20 - 2 5 of 7 www.diodes.com March 2016 © Diodes Incorporated BSS123 A D V A N C E I N F O R M A T I O N 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r( t) , T R A N S IE N T T H E R M A L R E S IS T A N C E t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance D=Single Pulse D=0.005 D=0.01 D=0.02 D=0.05 D=0.1 D=0.3 D=0.5 D=0.9 D=0.7 RθJA(t) = r(t) * RθJA RθJA = 357℃/W Duty Cycle, D = t1 / t2

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BSS123 Document number: DS30366 Rev. 20 - 2 6 of 7 www.diodes.com March 2016 © Diodes Incorporated BSS123 A D V A N C E I N F O R M A T I O N Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 J K1 K L1 GAUGE PLANE 0.25 H L M All 7° A C B D GF a Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 X Y Y1 C X1

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