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IRF6710S2TRPBF

hot IRF6710S2TRPBF

IRF6710S2TRPBF

For Reference Only

Part Number IRF6710S2TRPBF
Heisener # H299-IRF6710S2TRPBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 25V 12A DIRECTFET
Datasheet IRF6710S2TRPBF Datasheet
Package DirectFET? Isometric S1
In Stock 10536
Quota Limit No Limit
Lead Time Can Ship Immediately
Estimated Delivery Time Oct 18 - Oct 23 (Choose Expedited Shipping)

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IRF6710S2TRPBF

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IRF6710S2TRPBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF6710S2TRPBF Datasheet
PackageDirectFET? Isometric S1
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1190pF @ 13V
Power Dissipation (Max)1.8W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs5.9 mOhm @ 12A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET S1
Package / CaseDirectFET™ Isometric S1

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