Contact Us
SalesDept@heisener.com +86-755-83210559 ext. 811

IRF7521D1

hotIRF7521D1

IRF7521D1

For Reference Only

Part Number IRF7521D1
Manufacturer Infineon Technologies
Description MOSFET N-CH 20V 2.4A MICRO-8
Datasheet IRF7521D1 Datasheet
Package 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock 320 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Aug 6 - Aug 11 (Choose Expedited Shipping)
Request for Quotation

Part Number # IRF7521D1 (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For IRF7521D1 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add IRF7521D1 with quantity into BOM. Heisener.com does NOT require any registration to request a quote of IRF7521D1.

IRF7521D1 Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRF7521D1Datasheet
Package8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
SeriesFETKY?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds260pF @ 15V
Vgs (Max)��12V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.3W (Ta)
Rds On (Max) @ Id, Vgs135 mOhm @ 1.7A, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro8?
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

IRF7521D1 Datasheet

Page 1

Page 2

www.irf.com 1 Parameter Maximum Units ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 2.4 A ID @ TA = 70°C 1.9 IDM Pulsed Drain Current ➀ 19 PD @TA = 25°C Power Dissipation 1.3 W PD @TA = 70°C 0.8 Linear Derating Factor 10 mW/°C VGS Gate-to-Source Voltage ± 12 V dv/dt Peak Diode Recovery dv/dt ➁ 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C ● Co-packaged HEXFET® Power MOSFET and Schottky Diode ● N-Channel HEXFET ● Low VF Schottky Rectifier ● Generation 5 Technology ● Micro8TM Footprint IRF7521D1PRELIMINARY FETKY MOSFET / Schottky Diode Notes: ➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9) ➁ ISD ≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ➂ Pulse width ≤ 300µs; duty cycle ≤ 2% ➃ Surface mounted on FR-4 board, t ≤ 10sec. Parameter Maximum Units RθJA Junction-to-Ambient ➃ 100 °C/W Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Thermal Resistance Ratings Description VDSS = 20V RDS(on) = 0.135Ω Schottky Vf = 0.39V 01/29/99 Micro8 TM Top V iew 81 2 3 4 5 6 7 A A S G D D K K The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. The new Micro8 TM package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 TM an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 TM will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. PD-91646C

Page 3

IRF7521D1 2 www.irf.com 2 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ––– 0.085 0.135 VGS = 4.5V, ID = 1.7A ƒ ––– 0.12 0.20 VGS = 2.7V, ID = 0.85A ƒ VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 2.6 ––– ––– S VDS = 10V, ID = 0.85A ––– ––– 1.0 VDS = 16V, VGS = 0V ––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V Qg Total Gate Charge ––– 5.3 8.0 ID = 1.7A Qgs Gate-to-Source Charge ––– 0.84 1.3 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– 2.2 3.3 VGS = 4.5V, See Fig. 6 ƒ td(on) Turn-On Delay Time ––– 5.7 ––– VDD = 10V tr Rise Time ––– 24 ––– ID = 1.7A td(off) Turn-Off Delay Time ––– 15 ––– RG = 6.0Ω tf Fall Time ––– 16 ––– RD = 5.7Ω, ƒ Ciss Input Capacitance ––– 260 ––– VGS = 0V Coss Output Capacitance ––– 130 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current IGSS Ω µA nA ns Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current(Body Diode) ––– ––– 1.3 ISM Pulsed Source Current (Body Diode) ––– ––– 14 VSD Body Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V trr Reverse Recovery Time (Body Diode) ––– 39 59 ns TJ = 25°C, IF = 1.7A Qrr Reverse RecoveryCharge ––– 37 56 nC di/dt = 100A/µs ƒ A MOSFET Source-Drain Ratings and Characteristics Parameter Max. Units. Conditions IF(av) Max. Average Forward Current 1.9 50% Duty Cycle. Rectangular Wave, TA = 25°C 1.4 Fig.14 TA = 70°C ISM Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated Surge current 11 10ms sine or 6ms Rect. pulse load condition & with V RRM applied A A Schottky Diode Maximum Ratings Parameter Max. Units Conditions VFM Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C 0.62 IF = 2.0A, TJ = 25°C 0.39 IF = 1.0A, TJ = 125°C 0.57 IF = 2.0A, TJ = 125°C . IRM Max. Reverse Leakage current 0.02 VR = 20V TJ = 25°C 8 TJ = 125°C Ct Max. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated VR Schottky Diode Electrical Specifications V mA ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) See

Page 4

IRF7521D1 www.irf.com 3 2 Power Mosfet Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0.01 0.1 1 10 100 0.1 1 10 I , D ra in -t o -S o u rc e C u rr e n t (A ) D V , D ra in-to-Source Voltage (V )D S 20µs P U LS E W ID TH T = 25°C A VGS TO P 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOT TOM 1 .5V 1 .5V J 0.01 0.1 1 10 100 0.1 1 10 I , D ra in -t o -S o u rc e C u rr e n t (A ) D V , D ra in-to-Source Voltage (V )DS A VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V 1 .5V 20µs P UL S E W IDTH T = 150°CJ 0.1 1 1 0 1 0 0 1.5 2 .0 2 .5 3 .0 3 .5 4 .0 T = 25°C T = 150°C J J G SV , Gate-to -Source Voltage (V) DI , D ra in -t o -S o u rc e C u rr e n t (A ) A V = 10V 20µs PULSE W IDTH D S 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 JT , Junction Tem perature (°C ) R , D ra in -t o -S o u rc e O n R e s is ta n c e D S (o n ) (N o rm a liz e d ) A V = 4.5V G S I = 1.7AD

Page 5

IRF7521D1 4 www.irf.com Power Mosfet Characteristics Fig 7. Typical Source-Drain Diode Forward Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area 0 100 200 300 400 500 1 10 100 C , C a p a c it a n c e ( p F ) D SV , D rain-to-Source Voltage (V ) A V = 0V , f = 1M H z C = C + C , C S H O R TE D C = C C = C + C G S iss gs gd ds rss gd oss ds gd C iss C oss C rss 0 2 4 6 8 10 0 2 4 6 8 10 G G S A -V , G a te -t o -S o u rc e V o lt a g e ( V ) Q , Tota l G ate C harge (nC ) FO R TE S T CIR CU IT S E E FIG U RE 9 I = 1 .7A V = 16V D D S 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 T = 25°C T = 150°C J J V = 0V G S V , Source-to-D ra in Voltage (V ) I , R e v e rs e D ra in C u rr e n t (A ) S D S D A 0.1 1 10 100 0.1 1 10 100 V , D ra in-to-Source Voltage (V )DS I , D ra in C u rr e n t (A ) O P E RA TIO N IN THIS A R E A L IM ITE D B Y R D D S (on) T = 25 °C T = 150°C S ing le P u lse 100µs 1m s 10m s A A J

Page 6

IRF7521D1 www.irf.com 5 Power Mosfet Characteristics 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C P t t DM 1 2 t , Rectangular Pulse Duration (sec) T h e rm a l R e s p o n s e (Z ) 1 th J C 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 10. Typical On-Resistance Vs. Drain Current R D S (o n ) , D ra in -t o -S o u rc e O n R e s is ta n c e ( Ω ) Fig 11. Typical On-Resistance Vs. Gate Voltage 0.0 0 .2 0 .4 0 .6 0 .8 1 .0 0 .0 1 .0 2 .0 3 .0 4 .0 5 .0 6 .0 7 .0 A I , Drain Current (A)D V = 2.5V V = 4.0V GS = 5.GS 0 .04 0 .06 0 .08 0 .10 0 .12 0.0 2 .0 4 .0 6 .0 8 .0 A G S V , Gate-to-Source Voltage (V) I = 1.7AD R D S (o n ) , D ra in -t o -S o u rc e O n R e s is ta n c e ( Ω )

Page 7

IRF7521D1 6 www.irf.com Schottky Diode Characteristics Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage R e v e rs e C u rr e n t - I R ( m A ) Fig. 12 -Typical Forward Voltage Drop Characteristics 0.0001 0.001 0.01 0.1 1 10 100 0 4 8 12 16 20 R 100°C 75°C 50°C 25°C Reverse Voltage - V (V) 125°C A T = 150°CJ 0.1 1 1 0 0.0 0 .2 0 .4 0 .6 0 .8 1 .0 FM F In s ta n ta n e o u s F o rw a rd C u rr e n t - I ( A ) Forward Vo ltage D rop - V (V) T = 150°C T = 125°C T = 25°C J J J Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 0.0 0 .5 1 .0 1 .5 2 .0 2 .5 3 .0 F(AV) A Avera ge Forw ard C urrent - I (A ) A llo w a b le A m b ie n t T e m p e ra tu re - ( °C ) D = 3/4 D = 1/2 D =1/3 D = 1/4 D = 1/5 DC V = 20V R = 100°C/W Square wave t hJA r Forward Votage rop - VF ( V)

Page 8

IRF7521D1 www.irf.com 7 Micro8TM Package Details Part Marking INC H ES M ILLIME TE RS M IN M AX MIN M AX A 0.10 (.004) 0.2 5 (.010) M A M H 1 2 3 4 8 7 6 5 D - B - 3 3 E - A - e 6 X e 1 - C - B 8X 0.0 8 (.0 03) M C A S B S A 1 L 8X C 8X θ N O TE S: 1 DIMEN SION IN G AN D TO LERAN C IN G PER AN SI Y14.5M -1982. 2 CO N TR OLLIN G DIMEN SION : INC H . 3 DIMEN SION S D O N O T INC LU D E M O LD FLASH . A .0 36 .044 0 .91 1.11 A 1 .0 04 .008 0 .10 0.20 B .0 10 .014 0 .25 0.36 C .005 .007 0.13 0.18 D .116 .120 2.95 3.05 e .0256 B ASIC 0.65 BAS IC e 1 .0128 B ASIC 0.33 BAS IC E .1 16 .120 2.95 3.0 5 H .188 .198 4.78 5.03 L .016 .026 0.4 1 0.66 θ 0° 6° 0° 6° D IM LE AD A SSIGN M EN TS S IN G LE D UAL D D D D D 1 D 1 D 2 D 2 S S S G S 1 G 1 S2 G 2 1 2 3 4 1 2 3 4 8 7 6 5 8 7 6 5 RE C OM M E ND ED F O O TP RIN T 1.04 ( .0 41 ) 8X 0.38 ( .015 ) 8X 3.2 0 ( .126 ) 4.2 4 ( .167 ) 5.2 8 ( .2 08 ) 0.65 ( .02 56 ) 6X

IRF7521D1 Reviews

Average User Rating
5 / 5 (179)
★ ★ ★ ★ ★
5 ★
161
4 ★
18
3 ★
0
2 ★
0
1 ★
0

Write a Review

Not Rated
Thanks for Your Review!

Kash*****veri

July 18, 2020

Great seller, would recommend buying from. , good communication and problem solving

Aleja*****Doctor

July 16, 2020

I like doing business with Heisener. Get all the items I want. The website is well organized, intuitive, works correctly and pages load quickly. Well done!

Bla*****Dey

July 1, 2020

Very good and very fast . 100% safe company

Jacks*****nders

June 22, 2020

Better than ever - more stock, better prices, quicker shipments, many choices of payment.

Ren*****ramer

June 19, 2020

I tested some and all look good.

Kayle*****owell

June 11, 2020

Easier, quicker and cheaper to buy this whole assortment than to get just the few I needed from an electronics store.

Whit*****Kelley

June 9, 2020

Best organized online supplier, excellent service personnel.

Brid*****Roth

June 4, 2020

Excellent shopping cart process, various of products for selection and order fulfillment a good service quality. I rely on them heavily.

Jazi*****lein

June 3, 2020

I can count on your provision for BOM of my design in near future

Juli*****Mane

June 1, 2020

Used this on starter solenoid and works as expected.

IRF7521D1 Guarantees

Service Guarantee

Service Guarantees

We guarantee 100% customer satisfaction.

Our experienced sales team and tech support team back our services to satisfy all our customers.

Quality Guarantee

Quality Guarantees

We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

IRF7521D1 Packaging

Verify Products
Customized Labels
Professional Packaging
Sealing
Packing
Insepction

IRF7521D1 Related Products

SIT1602BC-73-25N-6.000000E SIT1602BC-73-25N-6.000000E SiTIME, -20 TO 70C, 2016, 50PPM, 2.5V, 6, -, FETKY? View
0505J0503P00DQT 0505J0503P00DQT Knowles Syfer, CAP CER 3PF 50V C0G/NP0 0505, 0505 (1313 Metric), FETKY? View
1206Y0250331KDR 1206Y0250331KDR Knowles Syfer, CAP CER 330PF 25V X7R 1206, 1206 (3216 Metric), FETKY? View
URY1H331MHD1TO URY1H331MHD1TO Nichicon, CAP ALUM 330UF 20% 50V RADIAL, Radial, Can, FETKY? View
74AHC132PW,112 74AHC132PW,112 Nexperia USA Inc., IC GATE NAND 4CH 2-INP 14-TSSOP, 14-TSSOP (0.173", 4.40mm Width), FETKY? View
4120-G217-J1M1-M6S5ZN-7.5A 4120-G217-J1M1-M6S5ZN-7.5A E-T-A, CIR BRKR THRM 7.5A 115VAC/28VDC, -, FETKY? View
B57891M0332J000 B57891M0332J000 EPCOS (TDK), NTC THERMISTOR 3.3K OHM 5% DISC, Disc, 3.5mm Dia x 3.5mm W, FETKY? View
RNF14FTD162R RNF14FTD162R Stackpole Electronics Inc., RES 162 OHM 1/4W 1% AXIAL, Axial, FETKY? View
CA06PG20-16PB01 CA06PG20-16PB01 ITT Cannon, LLC, CONN PLUG 9POS INLINE W/PINS, -, FETKY? View
D38999/20ZJ4JN-LC D38999/20ZJ4JN-LC Amphenol Aerospace Operations, CONN RCPT HSG FMALE 56POS PNL MT, -, FETKY? View
JCB06DYFD JCB06DYFD Sullins Connector Solutions, CONN EDGE DUAL FMALE 12POS 0.050, -, FETKY? View
PCN13-20S-2.54DS PCN13-20S-2.54DS Hirose Electric Co Ltd, DIN CONN RCPT 20POS 2 ROW RIANGL, -, FETKY? View
Payment Methods
Delivery Services

Quick Inquiry

IRF7521D1

Certified Quality

Heisener's commitment to quality has shaped our processes for sourcing, testing, shipping, and every step in between. This foundation underlies each component we sell.

ISO9001:2015, ICAS, IAF, UKAS

View the Certificates

Do you have any question about IRF7521D1?

+86-755-83210559 ext. 811 SalesDept@heisener.com heisener007 2354944915 Send Message

IRF7521D1 Tags

  • IRF7521D1
  • IRF7521D1 PDF
  • IRF7521D1 datasheet
  • IRF7521D1 specification
  • IRF7521D1 image
  • Infineon Technologies
  • Infineon Technologies IRF7521D1
  • buy IRF7521D1
  • IRF7521D1 price
  • IRF7521D1 distributor
  • IRF7521D1 supplier
  • IRF7521D1 wholesales

IRF7521D1 is Available in