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IRFH4234TRPBF

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IRFH4234TRPBF

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Part Number IRFH4234TRPBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 25V 22A PQFN
Datasheet IRFH4234TRPBF Datasheet
Package 8-PowerTDFN
In Stock 335 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 3 - Jun 8 (Choose Expedited Shipping)
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Part Number # IRFH4234TRPBF (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRFH4234TRPBF Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRFH4234TRPBFDatasheet
Package8-PowerTDFN
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C22A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1011pF @ 13V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs4.6 mOhm @ 30A
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePQFN (5x6)
Package / Case8-PowerTDFN

IRFH4234TRPBF Datasheet

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FastIRFET™ IRFH4234PbF HEXFET® Power MOSFET Base part number Package Type Standard Pack Orderable Part Number     Form Quantity IRFH4234PbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH4234TRPbF VDSS 25 V RDS(on) max (@ VGS = 10V) 4.6 (@ VGS = 4.5V) 7.3 Qg (typical) 8.2 nC ID (@TC (Bottom) = 25°C) 60 A m     PQFN 5X6 mm Features Benefits Low Charge (typical 8.2 nC) Low Switching Losses Low RDSon (<4.6 m) Lower Conduction Losses Low Thermal Resistance to PCB (<4.6 °C/W) Enable better Thermal Dissipation Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout  Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Notes  through  are on page 9 Absolute Maximum Ratings     Parameter Max. Units VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 22 A ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 60 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 38 IDM Pulsed Drain Current  240 PD @TA = 25°C Power Dissipation  3.5 W PD @TC(Bottom) = 25°C Power Dissipation  27 Linear Derating Factor  0.028 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015

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  IRFH4234PbF 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015 D S G Static @ TJ = 25°C (unless otherwise specified)         Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V VGS = 0V, ID = 250µA BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 20 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 3.5 4.6 m VGS = 10V, ID = 30A  ––– 5.6 7.3 VGS = 4.5V, ID = 30A  VGS(th) Gate Threshold Voltage 1.1 1.6 2.1 V VDS = VGS, ID = 25µA VGS(th) Gate Threshold Voltage Coefficient ––– -5.6 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 20V, VGS = 0V IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 60 ––– ––– S VDS = 5.0V, ID = 30A Qg Total Gate Charge ––– 17 ––– nC VGS = 10V, VDS = 13V, ID = 30A Qg Total Gate Charge ––– 8.2 12.3 Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.6 –––   VDS = 13V Qgs2 Post-Vth Gate-to-Source Charge ––– 1.6 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 3.1 –––   ID = 30A Qgodr Gate Charge Overdrive ––– 1.9 –––   Qsw Switch Charge (Qgs2 + Qgd) ––– 4.7 –––   Qoss Output Charge ––– 7.7 ––– nC VDS = 16V, VGS = 0V RG Gate Resistance ––– 1.8 –––   td(on) Turn-On Delay Time ––– 7.8 ––– VDD = 13V, VGS = 4.5V tr Rise Time ––– 30 ––– ns ID = 30A td(off) Turn-Off Delay Time ––– 8.0 –––   RG=1.8 tf Fall Time ––– 5.3 –––   Ciss Input Capacitance ––– 1011 ––– VGS = 0V Coss Output Capacitance ––– 286 ––– pF VDS = 13V Crss Reverse Transfer Capacitance ––– 83 –––   ƒ = 1.0MHz Avalanche Characteristics         Parameter Typ. Max. EAS Single Pulse Avalanche Energy  ––– 42 IAR Avalanche Current  ––– 30 Diode Characteristics         Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 60 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 240 integral reverse (Body Diode)  p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 30A, VGS = 0V  trr Reverse Recovery Time ––– 10 15 ns TJ = 25°C, IF = 30A, VDD = 13V Qrr Reverse Recovery Charge ––– 11 17 nC di/dt = 200A/µs        Parameter Typ. Max. Units RJC (Bottom) Junction-to-Case  ––– 4.6 RJC (Top) Junction-to-Case  ––– 24 °C/W RJA Junction-to-Ambient  ––– 36 RJA (<10s) Junction-to-Ambient  ––– 24 Thermal Resistance

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  IRFH4234PbF 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015 Fig 1. Typical Output Characteristics Fig 4. Normalized On-Resistance vs. Temperature Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 3. Typical Transfer Characteristics Fig 2. Typical Output Characteristics 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.25V 3.0V BOTTOM 2.75V 60µs PULSE WIDTH Tj = 25°C 2.75V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) 2.75V 60µs PULSE WIDTH Tj = 150°C VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.25V 3.0V BOTTOM 2.75V 1.0 2.0 3.0 4.0 5.0 6.0 7.0 VGS, Gate-to-Source Voltage (V) 1.0 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) TJ = 25°C TJ = 150°C VDS = 10V 60µs PULSE WIDTH -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 R D S (o n) , D ra in -t o- S ou rc e O n R es is ta nc e ( N or m al iz ed ) ID = 30A VGS = 10V 1 10 100 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 C , C ap a ci ta nc e (p F ) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0 2 4 6 8 10 12 14 16 18 QG, Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 V G S , G at e- to -S ou rc e V o lta g e (V ) VDS= 20V VDS= 13V VDS= 5.0V ID= 30A

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  IRFH4234PbF 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 1 10 T he rm a l R e sp o ns e ( Z th JC ) °C /W 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to–Source Breakdown Voltage Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V) 0.1 1 10 100 1000 I S D , R ev er se D ra in C ur re nt ( A ) TJ = 25°C TJ = 150°C VGS = 0V 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 I D , D ra in -t o- S ou rc e C ur re nt ( A ) Tc = 25°C Tj = 150°C Single Pulse 10msec 1msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec DC -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) 0.8 1.2 1.6 2.0 2.4 2.8 V G S (t h ), G at e th re sh ol d V ol ta ge ( V ) ID = 25µA ID = 250µA ID = 1.0mA ID = 10mA 25 50 75 100 125 150 TC , Case Temperature (°C) 0 10 20 30 40 50 60 I D , D ra in C ur re nt ( A )

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  IRFH4234PbF 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015 Fig 12. On– Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 2.0 4.0 6.0 8.0 10.0 12.0 R D S (o n) , D ra in -t o -S o ur ce O n R es is ta nc e ( m  ) ID = 30A TJ = 25°C TJ = 125°C 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) 0 40 80 120 160 200 E A S , S in g le P ul se A va la n ch e E ne rg y (m J) ID TOP 6.8A 12A BOTTOM 30A Fig 14. Typical Avalanche Current vs. Pulsewidth 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 tav (sec) 0.1 1 10 100 1000 A va la nc he C ur re nt ( A ) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  j = 25°C and Tstart = 125°C. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse)

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  IRFH4234PbF 6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015 Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Fig 18. Gate Charge Test Circuit Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 19. Gate Charge Waveform Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms Fig 16a. Unclamped Inductive Test Circuit RG IAS 0.01tp D.U.T LVDS + - VDD DRIVER A 15V 20V tp V(BR)DSS IAS Fig 16b. Unclamped Inductive Waveforms VDD 

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  IRFH4234PbF 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ PQFN 5x6 Outline "B" Package Details XXXX XYWWX XXXXX INTERNATIONAL RECTIFIER LOGO PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) ASSEMBLY SITE CODE (Per SCOP 200-002) DATE CODE PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) PQFN 5x6 Part Marking For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf

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  IRFH4234PbF 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015 PQFN 5x6 Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Bo W P1 Ao Ko CODE TAPE DIMENSIONSREEL DIMENSIONS QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Pitch between successive cavity centers Overall width of the carrier tape DESCRIPTION Type Package 5 X 6 PQFN Note: All dimension are nominal Diameter Reel QTY Width Reel (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W Quadrant Pin 1 (Inch) W1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1

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