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IRLI2203N

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IRLI2203N

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Part Number IRLI2203N
Manufacturer Infineon Technologies
Description MOSFET N-CH 30V 61A TO220FP
Datasheet IRLI2203N Datasheet
Package TO-220-3 Full Pack
In Stock 7,534 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Aug 6 - Aug 11 (Choose Expedited Shipping)
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Part Number # IRLI2203N (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IRLI2203N Specifications

ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet IRLI2203NDatasheet
PackageTO-220-3 Full Pack
SeriesHEXFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 25V
Vgs (Max)��16V
FET Feature-
Power Dissipation (Max)47W (Tc)
Rds On (Max) @ Id, Vgs7 mOhm @ 37A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB Full-Pak
Package / CaseTO-220-3 Full Pack

IRLI2203N Datasheet

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IRLI2203NPRELIMINARY HEXFET® Power MOSFET PD - 9.1378A S D G VDSS = 30V RDS(on) = 0.007Ω ID = 61A l Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated TO-220 FULLPAK Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. 11/1/96 Description Parameter Typ. Max. Units RθJC Junction-to-Case ––– 3.2 RθJA Junction-to-Ambient ––– 65 Thermal Resistance Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 61 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 43 A IDM Pulsed Drain Current † 400 PD @TC = 25°C Power Dissipation 47 W Linear Derating Factor 0.31 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy‚† 390 mJ IAR Avalanche Current† 60 A EAR Repetitive Avalanche Energy 4.7 mJ dv/dt Peak Diode Recovery dv/dt ƒ† 1.2 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings °C/W

Page 3

IRLI2203N Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA† ––– ––– 0.007 VGS = 10V, ID = 37A „ ––– ––– 0.01 VGS = 4.5V, ID = 31A „ VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 47 ––– ––– S VDS = 25V, ID = 60A† ––– ––– 25 µA VDS = 30V, VGS = 0V ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 110 ID = 60A Qgs Gate-to-Source Charge ––– ––– 31 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 57 VGS = 4.5V, See Fig. 6 and 13 „† td(on) Turn-On Delay Time ––– 15 ––– VDD = 15V tr Rise Time ––– 210 ––– ns ID = 60A td(off) Turn-Off Delay Time ––– 29 ––– RG = 1.8Ω, VGS = 4.5V tf Fall Time ––– 54 ––– RD = 0.25Ω, See Fig. 10 „† Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 3500 ––– VGS = 0V Coss Output Capacitance ––– 1400 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 690 ––– ƒ = 1.0MHz, See Fig. 5† C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS nH LS Internal Source Inductance ––– 7.5 ––– LD Internal Drain Inductance ––– 4.5 ––– IDSS Drain-to-Source Leakage Current S D G Ω pF Source-Drain Ratings and Characteristics Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ VDD = 15V, starting TJ = 25°C, L = 220µH RG = 25Ω, IAS = 60A. (See Figure 12) ƒ ISD ≤ 60A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C … t=60s, ƒ=60Hz † Uses IRL2203N data and test conditions „ Pulse width ≤ 300µs; duty cycle ≤ 2%. Rev. # Parameters Old spec. New spec. Comments Revision Date 1 VGS(th) (Max.) 2.5V No spec. Removed VGS(th) Max. Specification 11/1/96 1 VGS (Max.) ±20 ±16 Decrease VGS Max. Specification 11/1/96 Specification changes S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) † ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 37A, VGS = 0V „ trr Reverse Recovery Time ––– 94 140 ns TJ = 25°C, IF = 60A Qrr Reverse RecoveryCharge ––– 280 410 µC di/dt = 100A/µs „† ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A 61 400

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IRLI2203N Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 1 10 100 1000 0.1 1 10 100 I , D ra in -t o -S o u rc e C u rr e n t (A ) D V , Dra in-to-Source Voltage (V )D S A 20µs PULSE W IDTH T = 25°CJ VGS TOP 15V 12V 10V 8 .0V 6 .0V 4 .0V 3 .0V BOTT OM 2.5V 2 .5V 1 10 100 1000 0.1 1 10 100 I , D ra in -t o -S o u rc e C u rr e n t (A ) D V , Dra in-to-Source Voltage (V )D S A 20µs PULSE W IDTH T = 175°C VGS TOP 15V 12V 10V 8 .0V 6 .0V 4 .0V 3 .0V BOTT OM 2.5V 2.5V J 1 1 0 1 0 0 1 0 0 0 2 . 0 3 . 0 4 . 0 5 . 0 6 . 0 7 . 0 8 . 0 9 . 0 T = 25°CJ G SV , Ga te-to-So urce Vol tage (V ) DI , D ra in -t o -S o u rc e C u rr e n t (A ) T = 1 75 °CJ A V = 15V 20µs P ULSE W ID TH DS 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 JT , Junction Tem perature (°C ) R , D ra in -t o -S o u rc e O n R e s is ta n c e D S (o n ) (N o rm a liz e d ) V = 10V GS A I = 100AD

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IRLI2203N Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0 2000 4000 6000 8000 1 10 100 C , C a p a c it a n c e ( p F ) D SV , Drain-to-Source Voltage (V) A V = 0V, f = 1M Hz C = C + C , C SHO RTE D C = C C = C + C GS iss gs gd ds rss gd o ss ds g d C is s C o s s C rs s 0 3 6 9 12 15 0 30 60 90 120 150 Q , Tota l G ate Charge (nC)G V , G a te -t o -S o u rc e V o lta g e ( V ) G S A FOR TE ST CIRCUIT SEE FIGURE 13 V = 24V V = 15V I = 60AD D S D S 1 0 1 0 0 1 0 0 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 T = 25°CJ V = 0V GS V , Source-to-Drain Voltage (V ) I , R e v e rs e D ra in C u rr e n t (A ) S D S D A T = 175°CJ 1 10 100 1000 1 10 100 V , Dra in-to-Source Voltage (V)DS I , D ra in C u rr e n t (A ) O PERATIO N IN THIS AREA L IM ITED BY R D DS (o n) 10 µs 10 0µs 1m s 10m s A T = 25 °C T = 175°C S ing le Pulse C J

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IRLI2203N Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VGS RG D.U.T. 5.0V + -VDD Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 C I , D ra in C u rr e n t (A m p s ) D T , C ase Tem perature (°C ) A 0 . 0 1 0 . 1 1 1 0 0 . 0 0 0 0 1 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 1 0 1 0 0 t , R ectangular Pulse D uratio n (sec)1 th J C D = 0 .5 0 0 . 01 0 . 0 2 0 . 0 5 0 .1 0 0 .2 0 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) A T h e rm a l R e s p o n s e ( Z ) P t 2 1 t DM No te s: 1 . Du ty fa ctor D = t / t 2. P eak T = P x Z + T 1 2 J D M thJC C

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IRLI2203N QG QGS QGD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + - 4.5 V Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain Current 0 200 400 600 800 1000 25 50 75 100 125 150 175 J E , S in g le P u ls e A v a la n c h e E n e rg y ( m J ) A S A Starting T , Junction Temperature (°C) V = 15V I TO P 24A 42A BO TTOM 60A D D D Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V(BR )D SS I AS R G IA S 0 .0 1Ωtp D .U .T LV D S + - V D D D R IV E R A 15 V 2 0V

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IRLI2203N P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period + - + + +- - - Fig 14. For N-Channel HEXFETS * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit ƒ „ ‚ RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer  *

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IRLI2203N PART NU M BERIN TER NATION AL R EC TIF IER LO GO EXAM PLE : THIS IS AN IRF1010 W ITH ASSEMBLY LO T CO DE 9B1M ASSEM BLY LO T CO DE D ATE C OD E (YYW W ) YY = YEAR W W = W EEK 9246 IR F1010 9B 1M A Part Marking Information TO-220 Fullpak Package Outline TO-220 Fullpak Outline Dimensions are shown in millimeters (inches) L EA D AS SIGN M EN T S 1 - GA T E 2 - D R AIN 3 - SO U R C E NO T ES : 1 D IM E N SION IN G & T O LER AN C IN G PE R A N SI Y1 4.5M , 1982 2 C O N T R OLL IN G D IM EN SION : IN C H . D C A B M IN IM U M C R E EP AG E D IST A N C E B ET W E EN A -B -C -D = 4.80 ( .189 ) 3X 2.85 (.1 12) 2.65 (.1 04) 2.80 ( .110) 2.60 ( .102) 4.80 ( .189 ) 4.60 ( .181 ) 7.10 ( .280 ) 6.70 ( .263 ) 3 .40 ( .1 33) 3 .10 ( .1 23) ø - A - 3 .7 0 ( .145) 3.2 0 ( .126) 1.15 ( .045) M IN . 3.30 ( .130) 3.10 ( .122) - B - 0 .90 ( .035 ) 0.70 ( .028 )3X 0.25 ( .010) M A M B 2 .5 4 ( .100) 2X 3X 13 .7 0 ( .540) 13 .5 0 ( .530) 16 .0 0 ( .630) 15 .8 0 ( .622) 1 2 3 10.60 ( .417 ) 10.40 ( .409 ) 1.40 ( .05 5) 1.05 ( .04 2) 0.48 ( .019 ) 0.44 ( .017 ) PART NU MBERINTER NATIONAL RECTIF IER LOGO D ATE CODE (YYW W ) YY = YEAR W W = W EEK A SEMBLY LOT COD E E 401 9 24 5 IRFI840G EXAM PLE : THI IS AN IRFI840G W ITH ASSEMBLY LOT CODE E401 A WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/96

IRLI2203N Reviews

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Oma*****haw

July 18, 2020

I have used 2 of the 10 units so far and they work fine.

Eli*****Borah

July 17, 2020

Well packed in anti-static bags. Repaired my amp perfectly - thank you!

Kyl*****ull

July 15, 2020

Great product at a good price. No complaints.

Clar*****rrea

July 7, 2020

These did exactly what I needed them to do. Electricity only flows in one direction. Perfect.

Ezequ*****ampos

July 6, 2020

Purchasing from Heisener means the real part is obtained no worried for product quality.

Blai*****arroll

July 4, 2020

Great item at a great price. Quick shipping. Nice seller. Rad transaction!

Dami*****arroll

June 26, 2020

I bought this for myself, and liked it so much. I also bought one for a friend.

Kayl*****oder

June 21, 2020

Worked very well! I would highly recommend buying.

Kael*****urry

June 17, 2020

Great kit, cost half the price of other stores. Includes most items that someone would need.

Emb*****Welch

May 31, 2020

Very quick dispatch, arrived the next day. Item as described. Thanks!

IRLI2203N Guarantees

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We provide 90 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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