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Part Number NDS8425
Manufacturer Fairchild/ON Semiconductor
Description MOSFET N-CH 20V 7.4A 8SOIC
Datasheet NDS8425 Datasheet
Package 8-SOIC (0.154", 3.90mm Width)
In Stock 200,408 piece(s)
Unit Price $ 0.6373 *
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 8 - Jun 13 (Choose Expedited Shipping)
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Part Number # NDS8425 (Transistors - FETs, MOSFETs - Single) is manufactured by Fairchild/ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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NDS8425 Specifications

ManufacturerFairchild/ON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet NDS8425Datasheet
Package8-SOIC (0.154", 3.90mm Width)
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C7.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1098pF @ 15V
Vgs (Max)��8V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Rds On (Max) @ Id, Vgs22 mOhm @ 7.4A, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

NDS8425 Datasheet

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To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at Please email any questions regarding the system integration to Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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January 2001  2001 Fairchild Semiconductor International NDS8425 Rev D (W) NDS8425 Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint package. Applications • DC/DC converter • Load switch Features • 7.4 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V RDS(ON) = 0.028 Ω @ VGS = 2.7 V • Fast switching speed • Low gate charge (11nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability in a widely used surface mount package S D S S SO-8 D D D G 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 8 V ID Drain Current – Continuous (Note 1a) ± 7.4 A – Pulsed ± 20 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ° C Thermal Characteristics Rθ JA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 ° C/W Rθ JC Thermal Resistance, Junction-to-Case (Note 1) 25 ° C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDS8425 NDS8425 13’’ 12mm 2500 units N D S 8425

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NDS8425 Rev D (W) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250µ A 20 V ∆ BVDSS ∆ TJ Breakdown Voltage Temperature Coefficient ID = 250 µ A, Referenced to 25° C 14 mV/° C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V VDS = 16 V,VGS = 0 V, TJ=55° C 1 10 µ A IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µ A 0.4 0.89 1.5 V ∆ VGS(th) ∆ TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µ A, Referenced to 25° C -3 mV/° C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 7.4 A VGS = 4.5 V, ID = 7.4 A, TJ=125° C VGS=2.7 V, ID =7.2A 15 21 19 22 31 28 mΩ ID(on) On–State Drain Current VGS = 4.5 V, VDS = 5 V 20 A gFS Forward Transconductance VDS = 5 V, ID = 7.4 A 31 S Dynamic Characteristics Ciss Input Capacitance 1098 pF Coss Output Capacitance 240 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 115 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 9 18 ns tr Turn–On Rise Time 13 24 ns td(off) Turn–Off Delay Time 26 42 ns tf Turn–Off Fall Time VDS = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 11 20 ns Qg Total Gate Charge 11 18 nC Qgs Gate–Source Charge 2.5 nC Qgd Gate–Drain Charge VDS = 10 V, ID = 7.4 A, VGS = 4.5 V 3.1 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 1.9 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.9 A (Note 2) 0.72 1.3 V Notes: 1. Rθ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rθ JC is guaranteed by design while Rθ CA is determined by the user's board design. a) 50°/W when mounted on a 1 in2 pad of 2 oz copper b) 105°/W when mounted on a .04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µ s, Duty Cycle < 2.0% N D S 8425

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NDS8425 Rev D (W) Typical Characteristics 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN-SOURCE VOLTAGE (V) 3.5V 3.0V 2.5V 1.5V VGS = 4.5V 2.0V 4.0V 0.5 1 1.5 2 2.5 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) VGS = 2.0V 3.5V 3.0V 4.0V 4.5 2.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 7.4A VGS = 4.5V 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) ID = 7.4 A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 5 10 15 20 25 30 0.5 1.5 2.5 3.5 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25oC 125oC VDS = 5V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25o -55oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. N D S 8425

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NDS8425 Rev D (W) Typical Characteristics (continued) 0 1 2 3 4 5 0 2 4 6 8 10 12 Qg, GATE CHARGE (nC) ID = 7.4A VDS = 5V 15V 10V 0 300 600 900 1200 1500 0.0 4.0 8.0 12.0 16.0 20.0 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.001 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 100µ sRDS(ON) LIMIT VGS = 4.5V SINGLE PULSE Rθ JA = 125 oC/W TA = 25 oC 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, TIME (SEC) SINGLE PULSE Rθ JA = 125 oC/W TA = 25 oC Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Rθ JA(t) = r(t) + Rθ JA Rθ JA = 125 °C/W TJ - TA = P * Rθ JA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. N D S 8425

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TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Rev. G  ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST SyncFET™ TinyLogic™ UHC™ VCX™  

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Ever*****h Frye

May 25, 2020

Good quality, buy back and then use, with the newly bought hard disk, very stable, at any time you can check things, not occupy space, very convenient.

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May 19, 2020

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May 14, 2020

Great product at a good price. No complaints.


May 6, 2020

Fast delivery, good quality, 100% satisfacted


May 4, 2020

Great price and condition, Very speedy delivery, Very pleased thank you


May 2, 2020

received with well packed and good parts, every piece of the NDS8425 works well.


April 30, 2020

Great item at a great price. Quick shipping. Nice seller. Rad transaction!


April 23, 2020

Pleased with this purchase, good, quick service and item exactly as shown.


April 22, 2020

I can find what I want, and also trust I'm getting what I paid for. Many times I had to send things back or eat the cost dealing shady sellers, either way it cost me.


April 10, 2020

What I like was it was shipped fast and no damage.

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