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NTD23N03RT4G

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NTD23N03RT4G

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Part Number NTD23N03RT4G
Manufacturer ON Semiconductor
Description MOSFET N-CH 25V 3.8A DPAK
Datasheet NTD23N03RT4G Datasheet
Package TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock 69,682 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Jan 28 - Feb 2 (Choose Expedited Shipping)
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Part Number # NTD23N03RT4G (Transistors - FETs, MOSFETs - Single) is manufactured by ON Semiconductor and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For NTD23N03RT4G specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add NTD23N03RT4G with quantity into BOM. Heisener.com does NOT require any registration to request a quote of NTD23N03RT4G.

NTD23N03RT4G Specifications

ManufacturerON Semiconductor
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet NTD23N03RT4GDatasheet
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta), 17.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds225pF @ 20V
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)1.14W (Ta), 22.3W (Tc)
Rds On (Max) @ Id, Vgs45 mOhm @ 6A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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