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STD35N3LH5

hot STD35N3LH5

STD35N3LH5

For Reference Only

Part Number STD35N3LH5
Heisener # H299-STD35N3LH5
Manufacturer STMicroelectronics
Description MOSFET N-CH 30V 35A DPAK
Datasheet STD35N3LH5 Datasheet
Package TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock 105008
Quota Limit No Limit
Lead Time Can Ship Immediately
Estimated Delivery Time Jun 20 - Jun 25 (Choose Expedited Shipping)

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STD35N3LH5

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STD35N3LH5 Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet STD35N3LH5 Datasheet
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
SeriesSTripFET? V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds725pF @ 25V
Power Dissipation (Max)35W (Tc)
Rds On (Max) @ Id, Vgs16 mOhm @ 15A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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hotSTD35N3LH5 STD30N10F7 STMicroelectronics, MOSFET N-CH 100V 30A DPAK, Package:TO-252-3, DPak (2 Leads + Tab), SC-63, Series:STripFET? V , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:35A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:725pF @ 25V, Power Dissipation (Max):35W (Tc), Rds On (Max) @ Id, Vgs:16 mOhm @ 15A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:D-Pak, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
hotSTD35N3LH5 STD7NM80-1 STMicroelectronics, MOSFET N-CH 800V 6.5A IPAK, Package:TO-251-3 Short Leads, IPak, TO-251AA, Series:STripFET? V , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:35A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:725pF @ 25V, Power Dissipation (Max):35W (Tc), Rds On (Max) @ Id, Vgs:16 mOhm @ 15A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:D-Pak, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
hotSTD35N3LH5 STD9NM40N STMicroelectronics, MOSFET N-CH 400V 5.6A DPAK, Package:TO-252-3, DPak (2 Leads + Tab), SC-63, Series:STripFET? V , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:35A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:725pF @ 25V, Power Dissipation (Max):35W (Tc), Rds On (Max) @ Id, Vgs:16 mOhm @ 15A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:D-Pak, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
hotSTD35N3LH5 STD5100TR SMC Diode Solutions, DIODE SCHOTTKY 100V DPAK, Package:TO-252-3, DPak (2 Leads + Tab), SC-63, Series:STripFET? V , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:35A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:725pF @ 25V, Power Dissipation (Max):35W (Tc), Rds On (Max) @ Id, Vgs:16 mOhm @ 15A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:D-Pak, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
hotSTD35N3LH5 LDK130PU10R STMicroelectronics, IC REG LINEAR 1V 300MA 6DFN, Package:6-XFDFN, Series:STripFET? V , FET Type:N-Channel, Technology:MOSFET (Metal Oxide), Drain to Source Voltage (Vdss):30V, Current - Continuous Drain (Id) @ 25°C:35A (Tc), Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V, Vgs(th) (Max) @ Id:2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V, Vgs (Max):±20V, Input Capacitance (Ciss) (Max) @ Vds:725pF @ 25V, Power Dissipation (Max):35W (Tc), Rds On (Max) @ Id, Vgs:16 mOhm @ 15A, 10V, Operating Temperature:-55°C ~ 175°C (TJ), Mounting Type:Surface Mount, Supplier Device Package:D-Pak, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

STD35N3LH5 is Available in