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STL35N6F3

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STL35N6F3

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Part Number STL35N6F3
Manufacturer STMicroelectronics
Description MOSFET N-CH 60V 44A POWERFLAT
Datasheet STL35N6F3 Datasheet
Package 8-PowerVDFN
In Stock 60,000 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
Estimated Delivery Time Sep 21 - Sep 26 (Choose Expedited Shipping)
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Part Number # STL35N6F3 (Transistors - FETs, MOSFETs - Single) is manufactured by STMicroelectronics and distributed by Heisener. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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STL35N6F3 Specifications

ManufacturerSTMicroelectronics
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Datasheet STL35N6F3Datasheet
Package8-PowerVDFN
SeriesSTripFET? III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds-
Vgs (Max)��20V
FET Feature-
Power Dissipation (Max)5W (Ta), 80W (Tc)
Rds On (Max) @ Id, Vgs22 mOhm @ 3A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat? (5x6)
Package / Case8-PowerVDFN

STL35N6F3 Datasheet

Page 1

Page 2

This is information on a product in full production. May 2012 Doc ID 16557 Rev 4 1/17 17 STL35N6F3 N-channel 60 V, 0.019 Ω, 10 A STripFET™ III Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features ■ N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance Applications ■ Switching applications Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on- resistance and gate charge to provide superior switching performance. Figure 1. Internal schematic diagram Order code VDSS RDS(on) max ID STL35N6F3 60 V < 0.022 Ω 10 A PowerFLAT™ 5x6 1 2 3 4 Table 1. Device summary Order code Marking Package Packaging STL35N6F3 35N6F3 PowerFLAT™ 5x6 Tape and reel www.st.com Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s)

Page 3

Contents STL35N6F3 2/17 Doc ID 16557 Rev 4 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s)

Page 4

STL35N6F3 Electrical ratings Doc ID 16557 Rev 4 3/17 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID (1) 1. The value is rated according to Rthj-c Drain current (continuous) at TC = 25 °C 35 A ID (1) Drain current (continuous) at TC = 100 °C 25 A ID (2) 2. The value is rated according to Rthj-pcb Drain current (continuous) at Tpcb = 25 °C 10 A ID (2) Drain current (continuous) at Tpcb=100 °C 7 A IDM (3) 3. Pulse width limited by safe operating area Drain current (pulsed) 100 A PTOT (1) Total dissipation at TC = 25 °C 80 W PTOT (2) Total dissipation at Tpcb = 25 °C 5 W Tstg Storage temperature -55 to 175 °C Tj Operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit Rthj-pcb (1) 1. When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec Thermal resistance junction-pcb max 31.3 °C/W Rthj-case Thermal resistance junction-case max. 1.9 °C/W Table 4. Avalanche characteristics Symbol Parameter Max value Unit IAV Not-repetitive avalanche current 5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAV, VDD = 50 V) 409 mJ Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s)

Page 5

Electrical characteristics STL35N6F3 4/17 Doc ID 16557 Rev 4 2 Electrical characteristics (TJ = 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 60 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 60 V, VDS = 60 V, TC = 125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2 4 V RDS(on) Static drain-source on-resistance VGS= 10 V, ID= 10 A 0.019 0.022 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f = 1 MHz, VGS = 0 - 762 173 16 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 30 V, ID = 10 A VGS =10 V (see Figure 13) - 13.6 5.0 3.7 - nC nC nC Rg Gate input resistance f=1 MHz open drain - 3.2 - Ω Ob so let e Pr o uc t(s ) - O bs ole te P ro du ct( s)

Page 6

STL35N6F3 Electrical characteristics Doc ID 16557 Rev 4 5/17 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD= 30 V, ID= 5 A, RG=4.7 Ω, VGS=10 V (see Figure 12) - 9.7 2.9 19 4 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current - 10 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 40 A VSD (2) 2. Pulsed: pulse duration= 300µs, duty cycle 1.5% Forward on voltage ISD = 10 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, di/dt = 100 A/µs, VDD= 48 V, TJ = 150 °C (see Figure 14) - 33 51.2 3.1 ns nC A Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s)

Page 7

Electrical characteristics STL35N6F3 6/17 Doc ID 16557 Rev 4 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized VDS vs temperature Figure 7. Static drain-source on-resistance ID 100 10 1 0.1 0.1 1 VDS(V)10 (A) Op era tio n i n t his ar ea is Lim ite d b y m ax R DS (on ) 1s 100ms 10ms Tj=175°C Tc=25°C Single pulse 0.01 AM11270v1 10 -4 10 -3 10 -2 10 -1 tp(s) 10 -4 10 -2 K 0.2 0.05 0.02 0.01 0.1 Zth-pcb=k* Rthj-pcb Single pulse δ=0.5 10 0 10 1 10 2 10 -3 10 -1 Rthj-pcb=31.3°C/W PowerFlat_SI_C_Size ID 60 40 20 0 0 4 VDS(V)8 (A) 2 6 80 5V 6V 7V VGS=10V AM11271v1 ID 60 40 20 0 0 4 VGS(V)8 (A) 2 6 80 VGS=5V AM11272v1 BVDSS -75 TJ(°C) (norm) -25 7525 125 0.90 0.94 0.98 1.02 1.06 1.10 ID=1mA AM11273v1 RDS(on) 18.8 18.7 18.6 18.5 0 8 ID(A) (mΩ) 4 12 18.9 19.0 19.1 19.2 VGS=10V 16 20 AM11274v1 Ob so let e Pr od uc t(s ) - O bs ole te P od uc t(s )

Page 8

STL35N6F3 Electrical characteristics Doc ID 16557 Rev 4 7/17 Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature VGS 6 4 2 0 0 2 Qg(nC) (V) 8 8 4 6 10 VDS=30V ID=10A 10 12 12 14 16 AM11275v1 C 1200 800 400 0 0 20 VDS(V) (pF) 10 1600 30 Ciss Coss Crss 40 50 VGS=0 f=1MHz AM11276v1 VGS(th) 0.90 0.70 -75 TJ(°C) (norm) -25 1.10 7525 125 ID=250µA 0.50 AM11277v1 RDS(on) 1.8 1.4 1.0 0.2 -75 TJ(°C) (norm) -25 7525 125 ID=10A VGS=10V 0.6 2.2 AM11278v1 Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s)

Page 9

Test circuits STL35N6F3 8/17 Doc ID 16557 Rev 4 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times Figure 15. Unclamped inductive load test circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform AM01468v1 VGS PW VD RG RL D.U.T. 2200 μF 3.3 μF VDD AM01469v1 VDD 47kΩ 1kΩ 47kΩ 2.7kΩ 1kΩ 12V Vi=20V=VGMAX 2200 μF PW IG=CONST 100Ω 100nF D.U.T. VG AM01470v1 A D D.U.T. S B G 25 Ω A A B B RG G FAST DIODE D S L=100μH μF 3.3 1000 μF VDD AM01471v1 Vi Pw VD ID D.U.T. L 2200 μF 3.3 μF VDD AM01472v1 V(BR)DSS VDDVDD VD IDM ID AM01473v1 VDS ton tdon tdoff toff tftr 90% 10% 10% 0 0 90% 90% 10% VGS Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s)

Page 10

STL35N6F3 Package mechanical data Doc ID 16557 Rev 4 9/17 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. PowerFLAT™ 5x6 type C-B mechanical data Dim. mm Min. Typ. Max. A 0.80 0.83 0.93 A1 0 0.02 0.05 A3 0.20 b 0.35 0.40 0.47 D 5.00 D1 4.75 D2 4.15 4.20 4.25 E 6.00 E1 5.75 E2 3.43 3.48 3.53 E4 2.58 2.63 2.68 e 1.27 L 0.70 0.80 0.90 Ob so let e Pr od uc t(s ) - O bs ole te P ro du ct( s)

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Pau*****aju

August 21, 2020

Very pleased purchasing experience, would definitely buy again.

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August 1, 2020

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July 27, 2020

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July 23, 2020

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July 18, 2020

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July 17, 2020

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July 12, 2020

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July 10, 2020

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July 8, 2020

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Juli*****Dodson

July 7, 2020

Thousands of in stock parts with low cost shipping and standard quality.

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