Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 375A DIRECTFET
|
Package: DirectFET? Isometric L8 |
Stock5,520 |
|
MOSFET (Metal Oxide) | 40V | 46A (Ta), 375A (Tc) | 10V | 4V @ 250µA | 330nC @ 10V | 11880pF @ 25V | ±20V | - | 3.8W (Ta), 125W (Tc) | 1 mOhm @ 160A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET? Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 100V 10.3A TO-220
|
Package: TO-220-3 |
Stock60,000 |
|
MOSFET (Metal Oxide) | 100V | 10.3A (Tc) | 4.5V, 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | ±20V | - | 50W (Tc) | 154 mOhm @ 8.1A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-220
|
Package: TO-220-3 |
Stock4,464 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 5V, 10V | 2.2V @ 80µA | 196nC @ 10V | 9417pF @ 25V | ±16V | - | 136W (Tc) | 5.9 mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET P-CH 20V 14.9A 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,912 |
|
MOSFET (Metal Oxide) | 20V | 14.9A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 128nC @ 4.5V | 5962pF @ 15V | ±12V | - | 2.5W (Ta) | 8 mOhm @ 14.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
NXP |
MOSFET N-CH 20V 7.9A 6DFN
|
Package: 6-UDFN Exposed Pad |
Stock3,952 |
|
MOSFET (Metal Oxide) | 20V | 7.9A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 13nC @ 4.5V | 886pF @ 10V | ±8V | - | 1.7W (Ta), 12.5W (Tc) | 18 mOhm @ 7.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN2020MD (2x2) | 6-UDFN Exposed Pad |
||
Microsemi Corporation |
MOSFET N-CH TO-267AB
|
Package: TO-267AB |
Stock7,536 |
|
MOSFET (Metal Oxide) | 200V | 27.4A (Tc) | 10V | 4V @ 250µA | 115nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 105 mOhm @ 27.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-267AB | TO-267AB |
||
Vishay Siliconix |
MOSFET N-CH 150V 18A TO220-3
|
Package: TO-220-3 |
Stock60,336 |
|
MOSFET (Metal Oxide) | 150V | 18A (Tc) | 6V, 10V | 2V @ 250µA (Min) | 25nC @ 10V | 900pF @ 25V | ±20V | - | 88W (Tc) | 95 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 40V 60A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock510,012 |
|
MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 3V @ 250µA | 95nC @ 10V | 3120pF @ 25V | ±20V | - | 3W (Ta), 93.7W (Tc) | 13 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 200V 2.3A 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,720 |
|
MOSFET (Metal Oxide) | 200V | 2.3A (Ta) | 6V, 10V | 4V @ 250µA | 30nC @ 10V | - | ±20V | - | 1.5W (Ta) | 130 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
NXP |
MOSFET N-CH 100V DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,624 |
|
MOSFET (Metal Oxide) | 100V | 33A (Tc) | 4.5V, 10V | 2V @ 1mA | - | 3072pF @ 25V | ±10V | - | 114W (Tc) | 38.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microsemi Corporation |
MOSFET N-CH 500V 90A SP4
|
Package: SP4 |
Stock7,744 |
|
MOSFET (Metal Oxide) | 500V | 90A | 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | ±30V | - | 694W (Tc) | 45 mOhm @ 45A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
||
IXYS |
MOSFET N-CH 75V 200A TO-263-7
|
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock3,088 |
|
MOSFET (Metal Oxide) | 75V | 200A (Tc) | 10V | 4V @ 250µA | 160nC @ 10V | 6800pF @ 25V | ±20V | - | 430W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 (IXTA..7) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
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IXYS Integrated Circuits Division |
MOSFET N-CH 250V 360MA SOT-89
|
Package: TO-243AA |
Stock2,112 |
|
MOSFET (Metal Oxide) | 250V | 360mA (Ta) | 0V | - | - | 350pF @ 25V | ±15V | Depletion Mode | 1.6W (Ta) | 4 Ohm @ 200mA, 0V | -55°C ~ 125°C (TJ) | Surface Mount | SOT-89-3 | TO-243AA |
||
Diodes Incorporated |
MOSFET N-CH 40V 7.2A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock350,028 |
|
MOSFET (Metal Oxide) | 40V | 7.2A (Ta) | 4.5V, 10V | 1V @ 250µA | 17.1nC @ 10V | 827pF @ 20V | ±20V | - | 2.15W (Ta) | 50 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 200V 19.5A TO-3P
|
Package: TO-3P-3, SC-65-3 |
Stock5,344 |
|
MOSFET (Metal Oxide) | 200V | 19.5A (Tc) | 5V | 2V @ 250µA | 120nC @ 5V | 3250pF @ 25V | ±20V | - | 204W (Tc) | 230 mOhm @ 9.8A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 2.2A I2PAK
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,248 |
|
MOSFET (Metal Oxide) | 900V | 2.2A (Tc) | 10V | 5V @ 250µA | 15nC @ 10V | 500pF @ 25V | ±30V | - | 3.13W (Ta), 85W (Tc) | 7.2 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET NCH 200V 72A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,744 |
|
MOSFET (Metal Oxide) | 200V | 72A (Tc) | 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | ±20V | - | 375W (Tc) | 22 mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | - | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 650V 22.4A TO-262
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2,656 |
|
MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | ±20V | - | 195.3W (Tc) | 150 mOhm @ 9.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
IXYS |
MOSFET N-CH 300V 73A PLUS247
|
Package: TO-247-3 |
Stock6,576 |
|
MOSFET (Metal Oxide) | 300V | 73A (Tc) | 10V | 4V @ 4mA | 195nC @ 10V | 5400pF @ 25V | ±30V | - | 500W (Tc) | 45 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 16A D2-PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,864 |
|
MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 5.5V @ 2.5mA | 43nC @ 10V | 2250pF @ 25V | ±30V | - | 300W (Tc) | 400 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 200V 20A WPAK(3F)
|
Package: 8-PowerVDFN |
Stock12,456 |
|
MOSFET (Metal Oxide) | 200V | 20A (Ta) | 10V | - | 38nC @ 10V | 2200pF @ 25V | ±30V | - | 65W (Ta) | 69 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | WPAK(3F) (5x6) | 8-PowerVDFN |
||
ON Semiconductor |
MOSFET N-CH 60V SO8FL
|
Package: 8-PowerTDFN |
Stock4,272 |
|
MOSFET (Metal Oxide) | 60V | - | 4.5V, 10V | 2V @ 35µA | 9.5nC @ 10V | 880pF @ 25V | ±20V | - | 3.6W (Ta), 46W (Tc) | 9.2 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Microchip Technology |
MOSFET N-CH 250V SOT23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock77,280 |
|
MOSFET (Metal Oxide) | 250V | 150mA (Ta) | 4.5V, 10V | 2V @ 1mA | - | 110pF @ 25V | ±20V | - | 360mW (Ta) | 7 Ohm @ 1A, 10V | - | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
MOSFET N-CH 600V 7A TO-220FP
|
Package: TO-220-3 Full Pack |
Stock436,452 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 5V @ 250µA | 22nC @ 10V | 560pF @ 50V | ±30V | - | 25W (Tc) | 700 mOhm @ 3.5A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 60V 19A TDSON-8
|
Package: 8-PowerTDFN |
Stock3,760 |
|
MOSFET (Metal Oxide) | 60V | 19A (Ta), 100A (Tc) | 6V, 10V | 2.8V @ 36µA | 27nC @ 10V | 2000pF @ 30V | ±20V | - | 2.5W (Ta), 69W (Tc) | 3.9 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 600V 22A TO3P
|
Package: TO-3P-3, SC-65-3 |
Stock5,616 |
|
MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 5V @ 1.5mA | 38nC @ 10V | 2600pF @ 25V | ±30V | - | 500W (Tc) | 360 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
IXYS |
MOSFET N-CH 250V 140A TO264
|
Package: TO-264-3, TO-264AA |
Stock5,424 |
|
MOSFET (Metal Oxide) | 250V | 140A (Tc) | 10V | 5V @ 4mA | 255nC @ 10V | 19000pF @ 25V | ±20V | - | 960W (Tc) | 17 mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
Vishay Siliconix |
MOSFET P-CH 30V 25.7A 8SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,784 |
|
MOSFET (Metal Oxide) | 30V | 25.7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 203nC @ 10V | 8190pF @ 15V | ±20V | - | 2.9W (Ta), 6W (Tc) | 6 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET P-CH 60V 150MA SOT-323
|
Package: SC-70, SOT-323 |
Stock216,012 |
|
MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 4.5V, 10V | 2V @ 20µA | 1.5nC @ 10V | 19.1pF @ 25V | ±20V | - | 300mW (Ta) | 8 Ohm @ 150mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
||
STMicroelectronics |
MOSFET N-CH 650V 42A TO-220
|
Package: TO-220-3 |
Stock3,584 |
|
MOSFET (Metal Oxide) | 650V | 42A (Tc) | 10V | 5V @ 250µA | 98nC @ 10V | 4200pF @ 100V | ±25V | - | 250W (Tc) | 63 mOhm @ 21A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |