Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 75V 80A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,488 |
|
MOSFET (Metal Oxide) | 75V | 56A (Tc) | 10V | 4V @ 100µA | 84nC @ 10V | 3070pF @ 50V | ±20V | - | 140W (Tc) | 9 mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 51A TO-220AB
|
Package: TO-220-3 |
Stock4,160 |
|
MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 3V @ 250µA | 36nC @ 5V | 1620pF @ 25V | ±16V | - | 80W (Tc) | 13.5 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 9.3A TO-262
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2,240 |
|
MOSFET (Metal Oxide) | 200V | 9.3A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | ±20V | - | 82W (Tc) | 300 mOhm @ 5.4A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
ON Semiconductor |
MOSFET P-CH 30V 5A CPH6
|
Package: - |
Stock3,408 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 20V 0.7A 3DFN
|
Package: 3-UFDFN |
Stock4,080 |
|
MOSFET (Metal Oxide) | 20V | 700mA (Ta) | 1.5V, 4.5V | 1V @ 250µA | 850nC @ 4.5V | 62.5pF @ 10V | ±8V | - | 900mW (Ta) | 275 mOhm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN (1.0 x 0.60) | 3-UFDFN |
||
Microsemi Corporation |
MOSFET N-CH 18-LCC
|
Package: 18-BQFN Exposed Pad |
Stock6,496 |
|
MOSFET (Metal Oxide) | 100V | 4.5A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | - | ±20V | - | 800mW (Tc) | 350 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
||
Vishay Siliconix |
MOSFET P-CH 20V 4A 1206-8
|
Package: 8-SMD, Flat Lead |
Stock896,268 |
|
MOSFET (Metal Oxide) | 20V | 4A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 11nC @ 8V | 350pF @ 10V | ±8V | Schottky Diode (Isolated) | 1.5W (Ta), 3.1W (Tc) | 104 mOhm @ 2.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
||
ON Semiconductor |
MOSFET N-CH 60V 15A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,200 |
|
MOSFET (Metal Oxide) | 60V | 15A (Tc) | 10V | 4V @ 250µA | 22nC @ 10V | 450pF @ 25V | ±20V | - | 48.4W (Tc) | 90 mOhm @ 7.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 75A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,176 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 275nC @ 20V | 4000pF @ 25V | ±20V | - | 325W (Tc) | 7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 75A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,952 |
|
MOSFET (Metal Oxide) | 100V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 153nC @ 10V | 4400pF @ 25V | ±16V | - | 310W (Tc) | 14 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 75A TO-220AB
|
Package: TO-220-3 |
Stock3,168 |
|
MOSFET (Metal Oxide) | 60V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 150nC @ 10V | 4965pF @ 25V | ±16V | - | 310W (Tc) | 6.5 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,008 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4V @ 250µA | 67nC @ 10V | 1900pF @ 25V | ±20V | - | 3.7W (Ta), 150W (Tc) | 28 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 400V 2A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock22,680 |
|
MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 170pF @ 25V | ±20V | - | 3.1W (Ta), 36W (Tc) | 3.6 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 200V 12A TO-247AC
|
Package: TO-247-3 |
Stock4,848 |
|
MOSFET (Metal Oxide) | 200V | 12A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | ±20V | - | 150W (Tc) | 500 mOhm @ 7.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 24V 60A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock337,032 |
|
MOSFET (Metal Oxide) | 24V | 60A (Tc) | 5V, 10V | 2.5V @ 250µA | 64nC @ 10V | 2850pF @ 15V | ±20V | - | 95W (Tc) | 6 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 550V 17A TO-247
|
Package: TO-247-3 |
Stock4,496 |
|
MOSFET (Metal Oxide) | 550V | 17A (Tc) | 10V | 3.5V @ 660µA | 45nC @ 10V | 1800pF @ 100V | ±20V | - | 139W (Tc) | 199 mOhm @ 9.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 100V 495A SP6
|
Package: SP6 |
Stock7,200 |
|
MOSFET (Metal Oxide) | 100V | 495A | 10V | 4V @ 10mA | 1360nC @ 10V | 40000pF @ 25V | ±30V | - | 1250W (Tc) | 2.5 mOhm @ 200A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
||
Microsemi Corporation |
MOSFET N-CH 200V 208A SP4
|
Package: SP4 |
Stock7,056 |
|
MOSFET (Metal Oxide) | 200V | 208A | 10V | 5V @ 5mA | 280nC @ 10V | 14400pF @ 25V | ±30V | - | 781W (Tc) | 10 mOhm @ 104A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
||
Microchip Technology |
MOSFET P-CH 60V 640MA TO92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,624 |
|
MOSFET (Metal Oxide) | 60V | 640mA (Tj) | 5V, 10V | 3.5V @ 10mA | - | 450pF @ 25V | ±20V | - | 740mW (Tc) | 900 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
||
Diodes Incorporated |
MOSFET BVDSS: 8V 24V X3-DSN1010-
|
Package: 3-XDFN |
Stock4,272 |
|
MOSFET (Metal Oxide) | 12V | 7.5A (Ta) | 1.8V, 3.3V | 1V @ 250µA | 16nC @ 3.3V | 1503pF @ 6V | ±8V | - | 1.47W | 17 mOhm @ 5A, 3.3V | -55°C ~ 150°C (TJ) | Surface Mount | X3-DSN1010-3 | 3-XDFN |
||
STMicroelectronics |
MOSFET N CH 600V 98A MAX247
|
Package: TO-247-3 |
Stock3,632 |
|
MOSFET (Metal Oxide) | 600V | 98A (Tc) | 10V | 4V @ 250µA | 330nC @ 10V | 9600pF @ 50V | 25V | - | 625W (Tc) | 29 mOhm @ 49A, 10V | -55°C ~ 150°C (TJ) | Through Hole | MAX247? | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 25V 163A WDSON-2
|
Package: 3-WDSON |
Stock67,284 |
|
MOSFET (Metal Oxide) | 25V | 36A (Ta), 163A (Tc) | 4.5V, 10V | 2V @ 250µA | 62nC @ 10V | 4400pF @ 12V | ±20V | - | 2.8W (Ta), 57W (Tc) | 1.3 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
||
Infineon Technologies |
MOSFET N-CH 700V 20.5A DPAK
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,760 |
|
MOSFET (Metal Oxide) | 700V | 8.5A (Tc) | 10V | 3.5V @ 90µA | 10.5nC @ 10V | 364pF @ 400V | ±16V | - | 43W (Tc) | 600 mOhm @ 1.8A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 20V 8.7A 8-SOIC
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock58,620 |
|
MOSFET (Metal Oxide) | 20V | 8.7A (Ta) | 2.7V, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | 1600pF @ 15V | ±12V | - | 2.5W (Ta) | 22 mOhm @ 4.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 63A TO220AB
|
Package: TO-220-3 |
Stock28,518 |
|
MOSFET (Metal Oxide) | 100V | 63A (Tc) | 4.5V, 10V | 2V @ 1mA | 53.4nC @ 5V | 5657pF @ 25V | ±15V | - | 203W (Tc) | 18.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Panasonic Electronic Components |
MOSFET P-CH 12V 4A WSMINI6
|
Package: 6-SMD, Flat Leads |
Stock5,008 |
|
MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.8V, 4.5V | 1V @ 1mA | - | 1400pF @ 10V | ±8V | - | 700mW (Ta) | 34 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | WSMini6-F1-B | 6-SMD, Flat Leads |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 26A D2PAK
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock24,324 |
|
MOSFET (Metal Oxide) | 100V | 26A (Tc) | 10V | 4V @ 1mA | - | 1377pF @ 25V | ±20V | - | 106W (Tc) | 60 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 30V 20A 8SOP
|
Package: 8-PowerVDFN |
Stock29,610 |
|
MOSFET (Metal Oxide) | 30V | 20A (Tc) | 10V | 2.3V @ 1mA | 9.8nC @ 10V | 820pF @ 15V | ±20V | - | 1.6W (Ta), 24W (Tc) | 8.9 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Transphorm |
GAN FET 600V 9A TO220
|
Package: TO-220-3 |
Stock6,060 |
|
GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | ±18V | - | 65W (Tc) | 350 mOhm @ 5.5A, 8V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 3.7A SOT23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock293,718 |
|
MOSFET (Metal Oxide) | 30V | 3.7A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 12nC @ 4.5V | 635pF @ 15V | ±12V | - | 490mW (Ta) | 44 mOhm @ 3.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |